Highly (001)-textured p-type WSe2 Thin Films as Efficient Large-Area Photocathodes for Solar Hydrogen Evolution

Optical grade transformation of monolayer transition metal dichalcogenides via encapsulation annealing

Monolayer transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for optoelectronic applications due to their direct band gap and strong light-matter interactions. However, exfoliated TMDs have demonstrated optical characteristics that fall short of expectations, primarily because of significant defects and associated doping in the synthesized TMD crystals. Here, we report the improvement of optical properties in monolayer TMDs of MoS2, MoSe2, WS2, and WSe2, by hBN-encapsulation annealing. Monolayer WSe2 showed 2000% enhanced photoluminescence quantum yield (PLQY) and 1000% increased lifetime after encapsulation annealing at 1000 °C, which are attributed to dominant radiative recombination of excitons through dedoping of monolayer TMDs. Furthermore, after encapsulation annealing, the transport characteristics of monolayer WS2 changed from n-type to ambipolar, along with an enhanced hole transport, which also support dedoping of annealed TMDs. This work provides an innovative approach to elevate the optical grade of monolayer TMDs, enabling the fabrication of high-performance optoelectronic devices.

Direct Solution-Phase Synthesis and Functionalization of 2D WSe2 for Ambient Stability

2H phase tungsten diselenide (WSe2 ) is a p-type 2D semiconductor from the transition metal dichalcogenides (TMDs) family with unique optoelectrical properties. Solution phase production of atomically thin WSe2 is challenging due to its instability under ambient conditions. We present a highly efficient and scalable solution method for simultaneously exfoliating and functionalizing WSe2 by leveraging the non-covalent interaction between mercapto-group and bulk WSe2 . Single and few-layer 2H phase pure WSe2 sheets of lateral size up to 5 μm with minimal basal plane defects, as revealed by XPS, Raman and FTIR spectroscopy, are produced in a water-ethanol mixture. Remarkably, WSe2 dispersion remains stable even at high concentrations (10 mg/mL) and exhibited high colloidal stability with a shelf-life exceeding a year. The findings from our study suggest that through precise manipulation of intercalation chemistry, mass production of solution-processable phase-sensitive 2D materials such as WSe2 can be achieved. This advancement holds great potential for facilitating their practical utilization in various real-world applications.

NbTe4 Phase-Change Material: Breaking the Phase-Change Temperature Balance in 2D Van der Waals Transition-Metal Binary Chalcogenide

2D van der Waals (vdW) transition metal di-chalcogenides (TMDs) have garnered significant attention in the nonvolatile memory field for their tunable electrical properties, scalability, and potential for phase engineering. However, their complex switching mechanism and complicated fabrication methods pose challenges for mass production. Sputtering is a promising technique for large-area 2D vdW TMD fabrication, but the high melting point (typically Tm > 1000 °C) of TMDs requires elevated temperatures for good crystallinity. This study focuses on the low-Tm 2D vdW TM tetra-chalcogenides and identifies NbTe4 as a promising candidate with an ultra-low Tm of around 447 °C (onset temperature). As-grown NbTe4 forms an amorphous phase upon deposition that can be crystallized by annealing at temperatures above 272 °C. The simultaneous presence of a low Tm and a high crystallization temperature Tc can resolve important issues facing current phase-change memory compounds, such as high Reset energies and poor thermal stability of the amorphous phase. Therefore, NbTe4 holds great promise as a potential solution to these issues.

Controllable digital and analog resistive switching behavior of 2D layered WSe2 nanosheets for neuromorphic computing

Memristors with controllable resistive switching (RS) behavior have been considered as promising candidates for synaptic devices in next-generation neuromorphic computing. In this work, two-terminal memristors with controllable digital and analog RS behavior are fabricated based on two-dimensional (2D) WSe₂ nanosheets. Under a relatively high operating voltage of 4 V, the memristor demonstrates stable and reliable non-volatile bipolar digital RS with a high switching ratio of 6.3 × 10⁴. On the other hand, under a relatively low operation voltage, the memristor exhibits analog RS with a series of tunable resistance states. The fabricated memristors can work as an artificial synapse with fundamental synaptic functions, such as long-term potentiation (LTP) and depression (LTD) as well as paired-pulse facilitation (PPF). More importantly, the memristor demonstrates high conductance modulation linearity with the calculated nonlinear parameter for conductance as -0.82 in the LTP process, which is beneficial to improving the accuracy of neuromorphic computing. Furthermore, the neuromorphic computing of file types and image recognition can be emulated based on a constructed three-layer artificial neural network (ANN) with a recognition accuracy that can reach up to 95.9% for small digits. In addition, memristors can be used to emulate the learning-forgetting experience of the human brain. Consequently, the memristor based on 2D WSe₂ nanosheets not only exhibits controllable RS behavior but also simulates synaptic functions and is expected to be a potential candidate for future neuromorphic computing applications.

Enhancing Hydrogen Evolution Reaction via Synergistic Interaction between the [Mo3S13]2- Cluster Co-Catalyst and WSe2 Photocathode

A thiomolybdate [Mo₃S₁₃]^2- nanocluster is a promising catalyst for hydrogen evolution reaction (HER) due to the high number of active edge sites. In this work, thiomolybdate cluster films are prepared by spin-coating of a (NH₄)₂Mo₃S₁₃ solution both on FTO glass substrates as hydrogen evolving electrodes and on highly 00.1-textured WSe₂ for photoelectrochemical water splitting. As an electrocatalyst, [Mo₃S₁₃]^2- clusters demonstrate a low overpotential of 220 mV at 10 mA cm^-2 in 0.5 M H₂SO₄ electrolyte (pH 0.3) and remain structurally stable during the electrochemical cycling as revealed by in situ Raman spectroscopy. Moreover, as a co-catalyst on WSe₂, [Mo₃S₁₃]^2- clusters enhance the photocurrent substantially by more than two orders of magnitude (from 0.02 to 2.8 mA cm^-2 at 0 V vs RHE). The synergistic interactions between the photoelectrode and catalyst, i.e., surface passivation and band bending modification by the [Mo₃S₁₃]^2- cluster film, promoted HER catalytic activity of [Mo₃S₁₃]^2- clusters influenced by the WSe₂ support, are revealed by intensity-modulated photocurrent spectroscopy and density functional theory calculations, respectively. The band alignment of the WSe₂/[Mo₃S₁₃]^2- heterojunction, which facilitates the electron injection, is determined by correlating UV-vis with photoelectron yield spectroscopy results.

Transient Surface Photovoltage Spectroscopy of (NH4)2Mo3S13/WSe2 Thin-Film Photocathodes for Photoelectrochemical Hydrogen Evolution

Hydrogen produced from solar energy has the potential to replace petroleum in the future. To this respect, there is a need in the abandoned and efficient materials that can continuously split water molecules using solar energy. In this report, an ammonium thiomolybdate (ATM: (NH₄)₂Mo₃S₁₃) is evaluated as a p-type semiconductor film photocathode for hydrogen evolution reaction. The ATM thin films are prepared by spin-coating on fluorine-doped tin oxide substrates, and their structural, morphological, optical, photoelectrical, and photoelectrochemical (PEC) properties are studied. Transient surface photovoltage (TSPV) spectroscopy and spectroscopic ellipsometry indicate the band gap E_g = 1.9 eV for the ATM thin films. Furthermore, the photovoltage of the ATM thin films measured by TSPV is correlated to the photocurrents measured by the PEC characterization that can be used to evaluate the material potential for hydrogen generation. The films exhibit a low photocurrent density of 46 μA cm^-2 at 0 V_RHE. However, its combination with WSe₂ thin-film photocathodes results in a significant increase in photocurrent density up to 4.6 mA cm^-2 at 0 V_RHE (100 times). The reason for such a strong charge carrier transfer effect for ATM/WSe₂ heterojunction photocathodes is studied by TSPV spectroscopy that allows a comprehensive evaluation of potential photovoltaic materials toward PEC hydrogen production. Furthermore, the photovoltage generated by a WSe₂ thin film is 30 times lower than that of its single crystal, which indicates that the quality of WSe₂ thin films should be improved for faster PEC hydrogen evolution.

Interface Trap Suppression and Electron Doping in Van der Waals Materials Using Cross-Linked Poly(vinylpyrrolidone)

The instability of van der Waals (vdW) materials leads to spontaneous morphological and chemical transformations in the air. Although the passivation of vdW materials with other resistive materials is often used to solve stability issues, this passivation layer can block carrier injection and thus interfere with charge transfer doping. In this study, a facile method is proposed for n-doping and mediation of Se vacancies in tungsten diselenide (WSe₂) by poly(vinylpyrrolidone) (PVP) coating. The major carrier type of the PVP-coated WSe₂-based field-effect transistor (FET) was converted from hole (p-type) to electron (n-type). Furthermore, the vacancy-induced interface trap density was reduced by approximately 500 times. This study provides a practical doping and passivation method for the van der Waals materials, as well as a comprehensive understanding of the chemical reaction and electronic transport in these materials.

Prospects of Z-Scheme Photocatalytic Systems Based on Metal Halide Perovskites

Considering the attractive optoelectronic properties of metal halide perovskites (MHPs), their introduction to the field of photocatalysis was only a matter of time. Thus far, MHPs have been explored for the photocatalytic generation of hydrogen, carbon dioxide reduction, organic synthesis, and pollutant degradation applications. Of growing research interest and possible applied significance are the currently emerging developments of MHP-based Z-scheme heterostructures, which can potentially enable efficient photocatalysis of highly energy-demanding redox processes. In this Perspective, we discuss the advantages and limitations of MHPs compared to traditional semiconductor materials for applications as photocatalysts and describe emerging examples in the construction of MHP-based Z-scheme systems. We discuss the principles and material properties that are required for the development of such Z-scheme heterostructure photocatalysts and consider the ongoing challenges and opportunities in this emerging field.

A nanostructured MoO2/MoS2/MoP heterojunction electrocatalyst for the hydrogen evolution reaction

Electrocatalytic production of hydrogen from water is considered to be a promising and sustainable strategy. In this work, the low-cost nanostructured MoO₂/MoS₂/MoP heterojunction is successfully synthesized by phosphorization of the pre-prepared urchin-like MoO₂/MoS₂ nanospheres as the stable, highly efficient electrocatalysis for the hydrogen evolution reaction (HER). The MoO₂/MoS₂/MoP-800 (MoO₂/MoS₂ nanospheres are phosphated at 800 °C) displays a catalytic ability for the HER with an overpotential of 135 mV to achieve 10 mA cm^-2 and a Tafel slope of 67 mV dec^-1 in 0.5 M H₂SO₄, which is superior to MoO₂/MoS₂ nanospheres (200 °C; 24 h), MoO₂/MoS₂/MoP-700 (MoO₂/MoS₂ nanospheres are phosphated at 700 °C) and MoO₂/MoS₂/MoP-900 (MoO₂/MoS₂ nanospheres are phosphated at 900 °C). Meanwhile, the catalyst exhibits superior properties for HER with an overpotential of 145 mV to achieve 10 mA cm^-2 and a Tafel slope of 71 mV dec^-1 in 1 M KOH solution. Detailed characterizations reveal that the improved HER performances are significantly related to P-doping and the spherical nanostructure. This work not only provides a low-cost selective for electrocatalytic production of hydrogen, but also serves as a guide to optimize the composition and structure of nanocomposites.

Design Considerations of Efficient Photo-Electrosynthetic Cells and its Realization Using Buried Junction Si Thin Film Multi Absorber Cells

As is obvious from previous work on semiconductor photoelectrochemistry, single junction semiconductors do not provide either the required maximum photovoltage or a high photocurrent for solar water splitting, which is required for efficient stand-alone devices. From these experiences we conclude, that multi-junction devices must be developed for bias-free water splitting. In this article we present our design considerations needed for the development of efficient photo-electro-synthetic cells, which have guided us during the DFG priority program 1613. At first, we discuss the fundamental requirements, which must be fulfilled to lead to effective solar water splitting devices. Buried junction and photoelectrochemical arrangements are compared. It will become clear, that the photovoltaic (PV) and electrochemical (EC) components can be optimized separately, but that maximized conversion efficiencies need photovoltages produced in the photovoltaic part of the device, which are adapted to the electrochemical performance of the electrolyzer components without energetic losses in their coupling across the involved interfaces. Therefore, in part 2 we will present the needs to develop appropriate interface engineering layers for proper chemical and electronic surface passivation. In addition, highly efficient electrocatalysts, either for the hydrogen or oxygen evolution reaction (HER, OER), must be adjusted in their energetic coupling to the semiconductor band edges and to the redox potentials in the electrolyte with minimized losses in the chemical potentials. The third part of our paper describes at first the demands and achievements on developing multijunction thin-film silicon solar cells. With different arrangements of silicon stacks a wide range of photovoltages and photocurrents can be provided. These solar cells are applied as photocathodes in integrated directly coupled PV-EC devices. For this purpose thin Pt and Ni catalyst layers are used on top of the solar cells for the HER and a wire connected RuO2 counter electrode is used for the OER. Electrochemical stability has been successfully tested for up to 10,000 s in 0.1 M KOH. Furthermore, we will illustrate our experimental results on interface engineering strategies using TiO2 as buffer layer and Pt nanostructures as HER catalyst. Based on the obtained results the observed improvements, but also the still given limitations, can be related to clearly identified non-idealities in surface engineering either related to recombination losses at the semiconductor surface reducing photocurrents or due to not properly-aligned energy states leading to potential losses across the interfaces.

Covalent-bonding-induced strong phonon scattering in the atomically thin WSe2 layer

In nano-device applications using two-dimensional (2D) van der Waals materials, a heat dissipation through nano-scale interfaces can be a critical issue for optimizing device performances. By using a time-domain thermoreflectance measurement technique, we examine a cross-plane thermal transport through mono-layered (n = 1) and bi-layered (n = 2) WSe₂ flakes which are sandwiched by top metal layers of Al, Au, and Ti and the bottom Al₂O₃ substrate. In these nanoscale structures with hetero- and homo-junctions, we observe that the thermal boundary resistance (TBR) is significantly enhanced as the number of WSe₂ layers increases. In particular, as the metal is changed from Al, to Au, and to Ti, we find an interesting trend of TBR depending on the WSe₂ thickness; when referenced to TBR for a system without WSe₂, TBR for n = 1 decreases, but that for n = 2 increases. This result clearly demonstrates that the stronger bonding for Ti leads to a better thermal conduction between the metal and the WSe₂ layer, but in return gives rise to a large mismatch in the phonon density of states between the first and second WSe₂ layers so that the WSe₂-WSe₂ interface becomes a major thermal resistance for n = 2. By using photoemission spectroscopy and optical second harmonic generation technique, we confirm that the metallization induces a change in the valence state of W-ions, and also recovers a non-centrosymmetry for the bi-layered WSe₂.

Role of Photogenerated Iodine on the Energy-Conversion Properties of MoSe2 Nanoflake Liquid Junction Photovoltaics

Transition metal dichalcogenides (TMDs) such as MoSe₂ and WSe₂ are efficient materials for converting solar energy to electrical energy in photoelectrochemical photovoltaic cells. One limiting factor of these liquid junction solar cells is that photogenerated oxidation products accumulate on the electrode surface and decrease the photocurrent efficiency. However, it is unclear where the reaction products accumulate on the electrode surface and how they impact the local photoelectrochemical response. This open question is especially important for the structurally heterogeneous TMD nanoflake thin-film electrodes that are promising for large-area solar energy conversion applications. Here, we use a single-nanoflake photoelectrochemical and Raman microscopy approach to probe how the photogenerated I₂/I₃^- products impact the photocurrent collection efficiency and the onset potential in MoSe₂-nanoflake|I^-/I₂|Pt photoelectrochemical solar cells. We observed localized I₂/I₃^- deposition on all types of MoSe₂ nanoflake surface motifs, including basal planes, perimeter edges, and interior step edges. Illuminated nanoflake spots with the highest photocurrent collection efficiency are the first to be limited by I₂/I₃^- formation under high-intensity illumination. Interestingly, I₂/I₃^- formation occurs on illuminated surface spots that have the lowest photocurrent onset potential for iodide oxidation, corresponding to the highest open circuit voltage ( V_OC). The V_OC shifts could be attributed to variations in the surface reaction kinetics or doping density across the nanoflake. Our results highlight important limiting factors of nanoflake thin-film TMD liquid junction photovoltaics under concentrated solar illumination intensities.