Theoretical Perspective of Enhancing Order in n-Doped Thermoelectric Polymers through Side Chain Engineering: The Interplay of Counterion-Backbone Interaction and Side Chain Steric Hindrance

Donor-acceptor (D-A) copolymers doped with n-type dopants are widely sought after for their potential in organic thermoelectric devices. However, the existing structural disorder significantly hampers their charge transport and thermoelectric performance. In this Letter, we propose a mechanism to mitigate this disorder through side chain engineering. Utilizing molecular dynamics simulations, we demonstrate that strong Coulomb interactions between counterions and charged polymer backbones induce a transition in the stacking arrangement of the polymer backbones from a slipped to a vertical configuration. However, the presence of side chain steric hindrance impedes the formation of closely packed and ordered vertical stacking arrangements, resulting in greater distances between adjacent backbones and a higher level of structural disorder in the doped films. Therefore, we propose minimizing side chain steric hindrance to enhance the structural order in doped films. Our findings provide essential insights for advancing high-performance thermoelectric polymers.

High-Performance and Ecofriendly Organic Thermoelectrics Enabled by N-Type Polythiophene Derivatives with Doping-Induced Molecular Order

The ability of n-type polymer thermoelectric materials to tolerate high doping loading limits further development of n-type polymer conductivity. Herein, two alcohol-soluble n-type polythiophene derivatives that are n-PT3 and n-PT4 are reported. Due to the ability of two polymers to tolerate doping loading more significantly than 100 mol%, both achieve electrical conductivity >100 S cm-1 . Moreover, the conductivity of both polythiophenes remains almost constant at high doping concentrations with excellent doping tunability, which may be related to their ability to overcome charging-induced backbone torsion and morphology change caused by saturated doping. The characterizations reveal that n-PT4 has a high doping level and carrier concentration (>3.10 × 1020  cm-3 ), and the carrier concentration continues to increase as the doping concentration increases. In addition, doping leads to improved crystal structure of n-PT4, and the crystallinity does not decrease significantly with increasing doping concentration; even the carrier mobility increases with it. The synergistic effect of these two leads to both n-PT3 and n-PT4 achieving a breakthrough of 100 in conductivity and power factor. The DMlmC-doped n-PT4 achieves a power factor of over 150 µW m-1  K-2 . These values are among the highest for n-type organic thermoelectric materials.

A Highly Conductive n-Type Polythiophene Derivative: Effect of Molecular Weight on n-Doping Behavior and Thermoelectric Performance

Here, we examine the impact of the molecular weight of an n-type conjugated polymer (n-PT2) on molecular doping and thermoelectric parameters. Two common dopants TDAE and N-DMBI with different doping mechanisms are used for molecular doping of n-PT2. It turns out that n-PT2 with a higher molecular weight is more miscible with the dopant, leading to more charge carriers. Moreover, the crystal structures and morphology of n-PT2 with a higher molecular weight are more tolerant against the intrusion of dopant molecules and charging. Finally, these factors work in synergy to endow the doped n-PT2 with the best conductivity and power factor (144 S cm-1/75.0 μW m-1 K-2 and 75.4 S cm-1/98.5 μW m-1 K-2 after doping by TDAE and N-DMBI, respectively). This study indicates that regulating the molecular weight allows for synergistic regulation of conductivity and Seebeck coefficient and is a feasible means to improve the performance for a given n-type organic thermoelectric material.

Density of States Engineering of n-Doped Conjugated Polymers for High Charge Transport Performances

Charge transport of conjugated polymers in functional devices closely relates to their density of states (DOS) distributions. However, systemic DOS engineering for conjugated polymers is challenging due to the lack of modulated methods and the unclear relationship between DOS and electrical properties. Here, the DOS distribution of conjugated polymers is engineered to enhance their electrical performances. The DOS distributions of polymer films are tailored using three processing solvents with different Hansen solubility parameters. The highest n-type electrical conductivity (39 ± 3 S cm^-1 ), the highest power factor (63 ± 11 µW m^-1 K^-2 ), and the highest Hall mobility (0.14 ± 0.02 cm² V^-1 s^-1 ) of the polymer (FBDPPV-OEG) are obtained in three films with three various DOS distributions, respectively. Through theoretical and experimental exploration, it is revealed that the carrier concentration and transport property of conjugated polymers can be efficiently controlled by DOS engineering, paving the way for rationally fabricating organic semiconductors.

Binary Blend All-Polymer Solar Cells with a Record Efficiency of 17.41% Enabled by Programmed Fluorination Both on Donor and Acceptor Blocks

Despite remarkable breakthrough made by virtue of "polymerized small-molecule acceptor (PSMA)" strategy recently, the limited selection pool of high-performance polymer acceptors and long-standing challenge in morphology control impede their further developments. Herein, three PSMAs of PYDT-2F, PYDT-3F, and PYDT-4F are developed by introducing different fluorine atoms on the end groups and/or bithiophene spacers to fine-tune their optoelectronic properties for high-performance PSMAs. The PSMAs exhibit narrow bandgap and energy levels that match well with PM6 donor. The fluorination promotes the crystallization of the polymer chain for enhanced electron mobility, which is further improved by following n-doping with benzyl viologen additive. Moreover, the miscibility is also improved by introducing more fluorine atoms, which promotes the intermixing with PM6 donor. Among them, PYDT-3F exhibits well-balanced high crystallinity and miscibility with PM6 donor; thus, the layer-by-layer processed PM6/PYDT-3F film obtains an optimal nanofibril morphology with submicron length and ≈23 nm width of fibrils, facilitating the charge separation and transport. The resulting PM6/PYDT-3F devices realizes a record high power conversion efficiency (PCE) of 17.41% and fill factor of 77.01%, higher than the PM6/PYDT-2F (PCE = 16.25%) and PM6/PYDT-4F (PCE = 16.77%) devices.

Use of a Multiple Hydride Donor To Achieve an n-Doped Polymer with High Solvent Resistance

The ability to insolubilize doped semiconducting polymer layers can help enable the fabrication of efficient multilayer solution-processed electronic and optoelectronic devices. Here, we present a promising approach to simultaneously n-dope and largely insolubilize conjugated polymer films using tetrakis[{4-(1,3-dimethyl-2,3-dihydro-1H-benzo[d]imidazol-2-yl)phenoxy}methyl]methane (tetrakis-O-DMBI-H), which consists of four 2,3-dihydro-1H-benzoimidazole (DMBI-H) n-dopant moieties covalently linked to one another. Doping a thiophene-fused benzodifurandione-based oligo(p-phenylenevinylene)-co-thiophene polymer (TBDOPV-T) with tetrakis-O-DMBI-H results in a highly n-doped film with bulk conductivity of 15 S cm^-1. Optical absorption spectra provide evidence for film retention of ∼93% after immersion in o-dichlorobenzene for 5 min. The optical absorption signature of the charge carriers in the n-doped polymer decreases only slightly more than that of the neutral polymer under these conditions, indicating that the exposure to solvent also results in negligible dedoping of the film. Moreover, thermal treatment studies on a tetrakis-O-DMBI-H-doped TBDOPV-T film in contact with another undoped polymer film indicate immobilization of the molecular dopant in TBDOPV-T. This is attributed to the multiple electrostatic interactions between each dopant tetracation and up to four nearby anionic doped polymer segments.

An ultrafast and facile nondestructive strategy to convert various inefficient commercial nanocarbons to highly active Fenton-like catalysts

The Fenton-like process catalyzed by metal-free materials is one promising strategy for water purification, but to develop catalysts with adequate activity, complicated preparation/modification processes and harsh conditions are always needed, greatly increasing the costs for industrialization. Herein, we developed an ultrafast and facile strategy to convert various inefficient commercial nanocarbons into highly active catalysts by noncovalent functionalization with polyethylenimine (PEI). The n-doping by PEI could create net charge on the carbon plane and greatly enhance the electron mobility, rendering the catalyst much higher persulfate activation efficiency. Such interface engineering represents an innovative, simple, yet effective, strategy for boosting activities of nanocarbons, providing a conceptual advance to design cost-effective and highly efficient catalysts in environmental remediation, chemical synthesis, and fuel-cell applications.

The Fenton-like process catalyzed by metal-free materials presents one of the most promising strategies to deal with the ever-growing environmental pollution. However, to develop improved catalysts with adequate activity, complicated preparation/modification processes and harsh conditions are always needed. Herein, we proposed an ultrafast and facile strategy to convert various inefficient commercial nanocarbons into highly active catalysts by noncovalent functionalization with polyethylenimine (PEI). The modified catalysts could be in situ fabricated by direct addition of PEI aqueous solution into the nanocarbon suspensions within 30 s and without any tedious treatment. The unexpectedly high catalytic activity is even superior to that of the single-atom catalyst and could reach as high as 400 times higher than the pristine carbon material. Theoretical and experimental results reveal that PEI creates net negative charge via intermolecular charge transfer, rendering the catalyst higher persulfate activation efficiency.

Interface Trap Suppression and Electron Doping in Van der Waals Materials Using Cross-Linked Poly(vinylpyrrolidone)

The instability of van der Waals (vdW) materials leads to spontaneous morphological and chemical transformations in the air. Although the passivation of vdW materials with other resistive materials is often used to solve stability issues, this passivation layer can block carrier injection and thus interfere with charge transfer doping. In this study, a facile method is proposed for n-doping and mediation of Se vacancies in tungsten diselenide (WSe₂) by poly(vinylpyrrolidone) (PVP) coating. The major carrier type of the PVP-coated WSe₂-based field-effect transistor (FET) was converted from hole (p-type) to electron (n-type). Furthermore, the vacancy-induced interface trap density was reduced by approximately 500 times. This study provides a practical doping and passivation method for the van der Waals materials, as well as a comprehensive understanding of the chemical reaction and electronic transport in these materials.

Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O₂, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N₂ gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O₂ showed ~15% de-doping over 4 months. The n-type doping in pure N₂ exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.

Tunable Band-Edge Potentials and Charge Storage in Colloidal Tin-Doped Indium Oxide (ITO) Nanocrystals

Degenerately doped metal-oxide nanocrystals (NCs) show localized surface plasmon resonances (LSPRs) that are tunable via their tunable excess charge-carrier densities. Modulation of excess charge carriers has also been used to control magnetism in colloidal doped metal-oxide NCs. The addition of excess delocalized conduction-band (CB) electrons can be achieved through aliovalent doping or by postsynthetic techniques such as electrochemistry or photodoping. Here, we examine the influence of charge-compensating aliovalent dopants on the potentials of excess CB electrons in free-standing colloidal degenerately doped oxide NCs, both experimentally and through modeling. Taking Sn⁴⁺:In₂O₃ (ITO) NCs as a model system, we use spectroelectrochemical techniques to examine differences between aliovalent doping and photodoping. We demonstrate that whereas photodoping introduces excess CB electrons by raising the Fermi level relative to the CB edge, aliovalent impurity substitution introduces excess CB electrons by stabilizing the CB edge relative to an externally defined Fermi level. Significant differences are thus observed electrochemically between spectroscopically similar delocalized CB electrons compensated by aliovalent dopants and those compensated by surface cations (e.g., protons) during photodoping. Theoretical modeling illustrates the very different potentials that arise from charge compensation via aliovalent substitution and surface charge compensation. Spectroelectrochemical titrations allow the ITO NC band-edge stabilization as a function of Sn⁴⁺ doping to be quantified. Extremely large capacitances are observed in both In₂O₃ and ITO NCs, making these NCs attractive for reversible charge-storage applications.

EQCM Analysis of the Insertion Phenomena in a n-Doped Poly-Alkyl-Terthiophene With Regioregular Pattern of Substitution

In the present work, we have undertaken the study of the n-doping process in poly-3,3″-didodecyl-2,2':5',2″-terthiophene (poly-33″-DDTT) employing the electrochemical quartz crystal microbalance (EQCM). The present study aims at understanding how cathodic charge in n-doped poly-33″-DDTT is compensated. For this purpose, the in situ analysis of the variations of the polymeric mass has been considered. Poly-33″-DDTT was obtained as a thin coating onto a metallic substrate via the anodic coupling of the corresponding monomer 3,3″-didodecyl-2,2':5',2″-terthiophene (33″-DDTT). When subjected to electrochemical n-doping in the polarization interval -2.5 ≤ E _appl ≤ 0 V vs. Ag/Ag⁺, the films of poly-33″-DDTT varied their mass according to a mechanism of cations insertion during n-doping and cations extraction during polymer neutralization. In fact, the electrochemical doping of polythiophenes requires the accompanying exchange of charged species to maintain the electroneutrality within the structure of the polymer in all states of polarization. At the end of a full electrochemical cycle (consisting of the n-doping and the successive neutralization of poly-33″-DDTT), the polymer retains a fraction of the mass acquired during n-doping, thus manifesting the phenomena of mass trapping. The combined analysis of electrochemical and microgravimetric data suggests that poly-33″-DDTT in the n-doped state undergoes (or electrocatalyzes) uncontrolled electrochemical reactions that are not accompanied by mass variations.

Efficient n-Doping of Polymeric Semiconductors through Controlling the Dynamics of Solution-State Polymer Aggregates

Doping of polymeric semiconductors limits the miscibility between polymers and dopants. Although significant efforts have been devoted to enhancing miscibility through chemical modification, the electrical conductivities of n-doped polymeric semiconductors are usually below 10 S cm^-1 . We report a different approach to overcome the miscibility issue by modulating the solution-state aggregates of conjugated polymers. We found that the solution-state aggregates of conjugated polymers not only changed with solvent and temperature but also changed with solution aging time. Modulating the solution-state polymer aggregates can directly influence their solid-state microstructures and miscibility with dopants. As a result, both high doping efficiency and high charge-carrier mobility were simultaneously obtained. The n-doped electrical conductivity of P(PzDPP-CT2) can be tuned up to 32.1 S cm^-1 . This method can also be used to improve the doping efficiency of other polymer systems (e.g. N2200) with different aggregation tendencies and behaviors.

Persistent Conjugated Backbone and Disordered Lamellar Packing Impart Polymers with Efficient n-Doping and High Conductivities

Solution-processable highly conductive polymers are of great interest in emerging electronic applications. For p-doped polymers, conductivities as high a nearly 10⁵ S cm^-1 have been reported. In the case of n-doped polymers, they often fall well short of the high values noted above, which might be achievable, if much higher charge-carrier mobilities determined could be realized in combination with high charge-carrier densities. This is in part due to inefficient doping and dopant ions disturbing the ordering of polymers, limiting efficient charge transport and ultimately the achievable conductivities. Here, n-doped polymers that achieve a high conductivity of more than 90 S cm^-1 by a simple solution-based co-deposition method are reported. Two conjugated polymers with rigid planar backbones, but with disordered crystalline structures, exhibit surprising structural tolerance to, and excellent miscibility with, commonly used n-dopants. These properties allow both high concentrations and high mobility of the charge carriers to be realized simultaneously in n-doped polymers, resulting in excellent electrical conductivity and thermoelectric performance.

Sequential Doping of Ladder-Type Conjugated Polymers for Thermally Stable n-Type Organic Conductors

Doping of organic semiconductors is a powerful tool to optimize the performance of various organic (opto)electronic and bioelectronic devices. Despite recent advances, the low thermal stability of the electronic properties of doped polymers still represents a significant obstacle to implementing these materials into practical applications. Hence, the development of conducting doped polymers with excellent long-term stability at elevated temperatures is highly desirable. Here, we report on the sequential doping of the ladder-type polymer poly(benzimidazobenzophenanthroline) (BBL) with a benzimidazole-based dopant (i.e., N-DMBI). By combining electrical, UV-vis/infrared, X-ray diffraction, and electron paramagnetic resonance measurements, we quantitatively characterized the conductivity, Seebeck coefficient, spin density, and microstructure of the sequentially doped polymer films as a function of the thermal annealing temperature. Importantly, we observed that the electrical conductivity of N-DMBI-doped BBL remains unchanged even after 20 h of heating at 190 °C. This finding is remarkable and of particular interest for organic thermoelectrics.

Reversible Electron Doping of Layered Metal Hydroxide Nanoplates (M = Co, Ni) Using n-Butyllithium

Ambipolar doping of metal oxides is critical toward broadening the functionality of semiconducting oxides in electronic devices. Most metal oxides, however, show a strong preference for a single doping polarity due to the intrinsic stability of particular defects in an oxide lattice. In this work, we demonstrate that layered metal hydroxide nanomaterials of Co and Ni, which are intrinsically p-doped in their anhydrous rock salt form, can be n-doped using n-BuLi as a strong electron donor. A combination of X-ray characterization techniques reveal that hydroxide vacancy formation, Li⁺ adsorption, and varying degrees of electron delocalization are responsible for the stability of injected electrons. The doped electrons induce conductivity increases of 4-6 orders of magnitude relative to the undoped M(OH)₂. We anticipate that chemical electron doping of layered metal hydroxides may be a general strategy to increase carrier concentration and stability for n-doping of intrinsically p-type metal oxides.

Significance of Dopant/Component Miscibility to Efficient N-Doping in Polymer Solar Cells

The uncertain dopant location in the bulk heterojunction (BHJ) film hinders the wide application of molecular doping in polymer solar cells (PSCs) as is in other organic devices. It is known that the interaction between the dopant and component governs the dopant distribution in the BHJ film and thus largely controls the effectiveness of molecular doping. After excluding the strong dopant/component interaction by forming the charge-transfer complex in the solution, we estimate the dopant/component miscibility by calculating the difference of Hansen's total solubility parameters (△δ_i-Hansen) and prove its correctness by contact angle measurements, and two model systems of poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophe-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7'-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T)/poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (N2200) and poly[4,8-bis(5-(2-ethylhexyl)-thiophene-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl]] (PCE10)/N2200 are selected to reveal the miscibility-photovoltaic performance relations. Only the material combination with large △δ_i-Hansen between the n-dopant (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) and the donor polymer achieves enhanced photovoltaic performance. After that, we examine the doped morphology of polymer blends. Since the polymers' crystallizations are negatively affected by N-DMBI addition, we ensure the significance of n-doping on the enhanced device performance. Besides the dopant/polymer interaction, the solvent/polymer and solvent/dopant interactions are also considered to evaluate the kinetic effect on N-DMBI distribution by drawing the ternary phase diagram. We conclude that the kinetic morphological evolution does not change the miscibility-governed N-DMBI distribution in the BHJ film. Finally, we provide a direct relationship between the N-DMBI position and the device property by fabricating the bilayer devices. The enhancement of photovoltaic performances is observed in both material systems only if the N-DMBI distributes in N2200. Our work outlines a basis for using the dopant/component interaction and ternary phase diagram to predict the dopant distribution before extensive experiments. It significantly reduces the trial-and-error work and increases the reliability of molecularly doped PSCs.

B ← N Unit Enables n-Doping of Conjugated Polymers for Thermoelectric Application

Only very few conjugated polymers can be n-doped for thermoelectric applications. In this work, for the first time, we report that incorporation of Boron-Nitrogen coordination bond (B ← N unit) to a donor-acceptor (D-A) type conjugated polymer enable n-doping for thermoelectric application. The incorporation of B ← N unit into the polymer backbone leads to not only a downshift of LUMO/HOMO energy levels by 0.27 eV/0.33 eV, but also diminished intramolecular D-A character of the polymer backbone. As a result, while the control polymer cannot be n-doped, the polymer containing B ← N unit (PI-BN) can be n-doped by 4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)-N,N-dimethylaniline (N-DMBI). Finally, PI-BN exhibits an electrical conductivity (σ) of 0.97 × 10^-3 S cm^-1, Seebeck coefficient (S) of -453.8 μV K^-1, and power factor (PF) of 0.02 μW m^-1 K^-2 when doped with 5 wt % N-DMBI. A great advantage of PI-BN is its excellent miscibility with the n-dopant because of its amorphous nature and large pendent substituents. This work indicates that organoboron polymers can be n-doped and can be used for thermoelectrics.

Enhanced Environmental Stability Coupled with a 12.5% Power Conversion Efficiency in an Aluminum Oxide-Encapsulated n-Graphene/p-Silicon Solar Cell

A significant improvement in the power conversion efficiency (PCE) and the environmental stability of n-Graphene/p-Si solar cells is indicated through effective n-doping of graphene, using low work function oxide capping layers. AlO _x, deposited through atomic layer deposition, is particularly effective for such doping and in addition serves as an antireflection coating and a cell encapsulating layer. It is shown that the related charge transfer doping and interfacial engineering was crucial to achieve a record PCE of 12.5%. The work indicates a path forward, through work function engineering, for further efficiency gains in Gr-based solar cells.

Printable MoOx Anode Interlayers for Organic Solar Cells

Currently, solution-processed MoO_x anode interfacial layers (AILs) can only be fabricated by the spin-coating method in organic solar cells (OSCs), which severely limits their use in practical productions where large-area printing techniques are used. Herein, a facile method is demonstrated to prepare highly conductive MoO_x (denoted EG:Mo) that can be processed by printing methods such as wire-bar and blade coatings. The EG:Mo films are prepared by depositing an aqueous solution containing ammonium heptamolybdate (VI) tetrahydrate (NMo) and ethylene glycol (EG) and annealing at 200 °C. UV-vis absorption and X-ray photoelectron spectroscopy measurements confirm that Mo (VI) can be reduced to Mo (V) by EG, resulting in the n-doped EG:Mo. Using the EG:Mo as AILs, an OSC based on a PB3T:IT-M active layer exhibits a power conversion efficiency (PCE) of 12.1%, which is comparable to that of the PEDOT:PSS modified devices. More importantly, EG:Mo AILs can be processed by wire-bar and blade-coating methods, and the corresponding devices show PCEs of 11.9% and 11.5%, respectively. Furthermore, the EG:Mo AIL is processed by wire-bar coating to fabricate a large area device (1.0 cm² ), and a PCE of 10.1% is achieved.

Simple Chemical Treatment to n-Dope Transition-Metal Dichalcogenides and Enhance the Optical and Electrical Characteristics

The optical and electrical properties of monolayer transition-metal dichalcogenides (1L-TMDs) are critically influenced by two dimensionally confined exciton complexes. Although extensive studies on controlling the optical properties of 1L-TMDs through external doping or defect engineering have been carried out, the effects of excess charges, defects, and the populations of exciton complexes on the light emission of 1L-TMDs are not yet fully understood. Here, we present a simple chemical treatment method for n-dope 1L-TMDs, which also enhances their optical and electrical properties. We show that dipping 1Ls of MoS₂, WS₂, and WSe₂, whether exfoliated or grown by chemical vapor deposition, into methanol for several hours can increase the electron density and also can reduce the defects, resulting in the enhancement of their photoluminescence, light absorption, and the carrier mobility. This methanol treatment was effective for both n- and p-type 1L-TMDs, suggesting that the surface restructuring around structural defects by methanol is responsible for the enhancement of optical and electrical characteristics. Our results have revealed a simple process for external doping that can enhance both the optical and electrical properties of 1L-TMDs and help us understand how the exciton emission in 1L-TMDs can be modulated by chemical treatments.

Doping Versatile n-Type Organic Semiconductors via Room Temperature Solution-Processable Anionic Dopants

In this study, we describe a facile solution-processing method to effectively dope versatile n-type organic semiconductors, including fullerene, n-type small molecules, and graphene by commercially available ammonium and phosphonium salts via in situ anion-induced electron transfer. In addition to the Lewis basicity of anions, we unveiled that the ionic binding strength between the cation and anion of the salts is also crucial in modulating the electron transfer strength of the dopants to affect the resulting doping efficiency. Furthermore, combined with the rational design of n-type molecules, an n-doped organic semiconductor is demonstrated to be thermally and environmentally stable. This finding provides a simple and generally applicable method to make highly efficient n-doped conductors which complements the well-established p-doped organics such as PEDOT:PSS for organic electronic applications.

Thermoelectric Properties of Solution-Processed n-Doped Ladder-Type Conducting Polymers

Ladder-type "torsion-free" conducting polymers (e.g., polybenzimidazobenzophenanthroline (BBL)) can outperform "structurally distorted" donor-acceptor polymers (e.g., P(NDI2OD-T2)), in terms of conductivity and thermoelectric power factor. The polaron delocalization length is larger in BBL than in P(NDI2OD-T2), resulting in a higher measured polaron mobility. Structure-function relationships are drawn, setting material-design guidelines for the next generation of conducting thermoelectric polymers.

Effects of Organic Molecules with Different Structures and Absorption Bandwidth on Modulating Photoresponse of MoS2 Photodetector

Organic dye molecules possessing modulated optical absorption bandwidth and molecular structures can be utilized as sensitizing species for the enhancement of photodetector performance of semiconductor via photoinduced charge transfer mechanism. MoS2 photodetector were modified by drop-casting of methyl orange (MO), rhodamine 6G (R6G), and methylene blue (MB) with different molecular structures and extinction coefficients, and enhanced photodetector performance in terms of photocurrent, photoresponsity, photodetectivity, and external quantum efficiency were obtained after modification of MO, R6G, and MB, respectively. Furthermore, dyes showed different modulating abilities for photodetector performance after combination with MoS2, mainly due to the variation of molecular structures and optical absorption bandwidth. Among tested dyes, deposition of MB onto monolayer MoS2 grown by CVD resulted in photocurrent ∼20 times as high as pristine MoS2 due to favorable photoinduced charge transfer of photoexcited electrons from flat MB molecules to the MoS2 layer. Meanwhile, the corresponding photoresponsivity, photodetectivity, and an external quantum efficiency are 9.09 A W(1-), 2.2 × 10(11) Jones, 1729% at 610 nm, respectively. Photoinduced electron-transfer measurements of the pristine MoS2 and dye-modified MoS2 indicated the n-doping effect of dye molecules on the MoS2. Additionally, surface-enhanced Raman measurements also confirmed the direct correlation with charge transfer between organic dyes and MoS2 taking into account the chemically enhanced Raman scattering mechanism. Present work provides a new clue for the manipulation of high-performance of two-dimensional layered semiconductor-based photodetector via the combination of organic dyes.

Defect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation

We study with Raman spectroscopy the influences of He(+) bombardment and the environment on beam-induced defects in graphene encapsulated in hexagonal boron nitride (h-BN). We show for the first time experimentally the autonomous behavior of the D' defect Raman peak: in contrast to the D defect peak, the D' defect peak is sensitive to the local environment. In particular, it saturates with ion dose in the encapsulated graphene. Electrical measurements reveal n-type conduction in the BN-encapsulated graphene. We conclude that unbound atoms ("interfacials") between the sp(2)-layers of graphene and h-BN promote self-healing of the beam-induced lattice damage and that nitrogen-carbon exchange leads to n-doping of graphene.

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at V(DD) = 80 V (70% of 1/2V(DD)) and a gain of 85. Additionally, robust SWNT complementary metal-oxide-semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate.

Doping of fullerenes via anion-induced electron transfer and its implication for surfactant facilitated high performance polymer solar cells

Simple and solution-processible tetrabutyl-ammonium salts (TBAX) can dope fullerene and its derivatives to achieve conductive thin films (σ as high as 0.56 S/m). The electron transfer between the anions of TBAXs and n-type semiconductors induces doping without encountering any harsh activation. These provide valid support for the surfactant interfacial doping of fullerene in polymer solar cells for enhanced device performance.

Hollow nitrogen-containing core/shell fibrous carbon nanomaterials as support to platinum nanocatalysts and their TEM tomography study

Core/shell nanostructured carbon materials with carbon nanofiber (CNF) as the core and a nitrogen (N)-doped graphitic layer as the shell were synthesized by pyrolysis of CNF/polyaniline (CNF/PANI) composites prepared by in situ polymerization of aniline on CNFs. High-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared and Raman analyses indicated that the PANI shell was carbonized at 900°C. Platinum (Pt) nanoparticles were reduced by formic acid with catalyst supports. Compared to the untreated CNF/PANI composites, the carbonized composites were proven to be better supporting materials for the Pt nanocatalysts and showed superior performance as catalyst supports for methanol electrochemical oxidation. The current density of methanol oxidation on the catalyst with the core/shell nanostructured carbon materials is approximately seven times of that on the catalyst with CNF/PANI support. TEM tomography revealed that some Pt nanoparticles were embedded in the PANI shells of the CNF/PANI composites, which might decrease the electrocatalyst activity. TEM-energy dispersive spectroscopy mapping confirmed that the Pt nanoparticles in the inner tube of N-doped hollow CNFs could be accessed by the Nafion ionomer electrolyte, contributing to the catalytic oxidation of methanol.