Greatly enhanced light emission of MoS2 using photonic crystal heterojunction

Interfacing transition metal dichalcogenides with chromium germanium telluride quantum dots for controllable light-matter interactions

In this work, we unravel a facile solution-based method to prepare chromium germanium telluride, Cr₂Ge₂Te₆ (CGT) quantum dots (QDs), which present strong light-matter interactions with monolayer transition metal dichalcogenides (TMDs) in their CGT/TMD vertical heterostructures. The heterostructures' optoelectronic properties were controlled by simply varying the QDs thickness. We observed contrasting emissions from monolayer TMDs in the various CGT QDs-TMDs (of WS₂, WSe₂ and MoS₂) heterostructures depending on the density of QDs in the heterostructures. Low-density CGT QDs-based heterostructures demonstrated a reduced light emission intensity compared to the isolated monolayers, but with an increased trion ratio due to the electron doping effect of CGT QDs. In contrast, high-density CGT QDs-based heterostructures showed an increased light emission intensity and a broadened, red-shifted emission peak in comparison to the bare TMDs, attributed to the enhanced optical absorption in the heterostructures arising from the assembled CGT QDs. Finally, proof-of-concept field-effect transistor (FET) and photodetector devices based on the created CGT QDs-WS₂ heterostructures were designed, which showed an enhanced optoelectronic performance.

Recent Progress in the Synthesis of MoS2 Thin Films for Sensing, Photovoltaic and Plasmonic Applications: A Review

In the surge of recent successes of 2D materials following the rise of graphene, molybdenum disulfide (2D-MoS2) has been attracting growing attention from both fundamental and applications viewpoints, owing to the combination of its unique nanoscale properties. For instance, the bandgap of 2D-MoS2, which changes from direct (in the bulk form) to indirect for ultrathin films (few layers), offers new prospects for various applications in optoelectronics. In this review, we present the latest scientific advances in the field of synthesis and characterization of 2D-MoS2 films while highlighting some of their applications in energy harvesting, gas sensing, and plasmonic devices. A survey of the physical and chemical processing routes of 2D-MoS2 is presented first, followed by a detailed description and listing of the most relevant characterization techniques used to study the MoS2 nanomaterial as well as theoretical simulations of its interesting optical properties. Finally, the challenges related to the synthesis of high quality and fairly controllable MoS2 thin films are discussed along with their integration into novel functional devices.

Robust B-exciton emission at room temperature in few-layers of MoS2:Ag nanoheterojunctions embedded into a glass matrix

Tailoring the photoluminescence (PL) properties in two-dimensional (2D) molybdenum disulfide (MoS2) crystals using external factors is critical for its use in valleytronic, nanophotonic and optoelectronic applications. Although significant effort has been devoted towards enhancing or manipulating the excitonic emission in MoS2 monolayers, the excitonic emission in few-layers MoS2 has been largely unexplored. Here, we put forward a novel nano-heterojunction system, prepared with a non-lithographic process, to enhance and control such emission. It is based on the incorporation of few-layers MoS2 into a plasmonic silver metaphosphate glass (AgPO3) matrix. It is shown that, apart from the enhancement of the emission of both A- and B-excitons, the B-excitonic emission dominates the PL intensity. In particular, we observe an almost six-fold enhancement of the B-exciton emission, compared to control MoS2 samples. This enhanced PL at room temperature is attributed to an enhanced exciton-plasmon coupling and it is supported by ultrafast time-resolved spectroscopy that reveals plasmon-enhanced electron transfer that takes place in Ag nanoparticles-MoS2 nanoheterojunctions. Our results provide a great avenue to tailor the emission properties of few-layers MoS2, which could find application in emerging valleytronic devices working with B excitons.