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Zhang J, Tebyetekerwa M, Nguyen HT. Interfacing transition metal dichalcogenides with chromium germanium telluride quantum dots for controllable light-matter interactions. J Colloid Interface Sci 2021; 611:432-440. [PMID: 34968962 DOI: 10.1016/j.jcis.2021.12.131] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/29/2021] [Accepted: 12/20/2021] [Indexed: 10/19/2022]
Abstract
In this work, we unravel a facile solution-based method to prepare chromium germanium telluride, Cr2Ge2Te6 (CGT) quantum dots (QDs), which present strong light-matter interactions with monolayer transition metal dichalcogenides (TMDs) in their CGT/TMD vertical heterostructures. The heterostructures' optoelectronic properties were controlled by simply varying the QDs thickness. We observed contrasting emissions from monolayer TMDs in the various CGT QDs-TMDs (of WS2, WSe2 and MoS2) heterostructures depending on the density of QDs in the heterostructures. Low-density CGT QDs-based heterostructures demonstrated a reduced light emission intensity compared to the isolated monolayers, but with an increased trion ratio due to the electron doping effect of CGT QDs. In contrast, high-density CGT QDs-based heterostructures showed an increased light emission intensity and a broadened, red-shifted emission peak in comparison to the bare TMDs, attributed to the enhanced optical absorption in the heterostructures arising from the assembled CGT QDs. Finally, proof-of-concept field-effect transistor (FET) and photodetector devices based on the created CGT QDs-WS2 heterostructures were designed, which showed an enhanced optoelectronic performance.
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Affiliation(s)
- Jian Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Mike Tebyetekerwa
- School of Engineering, College of Engineering and Computer Science, The Australia National University, Canberra, Australian Capital Territory 2601, Australia.
| | - Hieu T Nguyen
- School of Engineering, College of Engineering and Computer Science, The Australia National University, Canberra, Australian Capital Territory 2601, Australia.
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Mouloua D, Kotbi A, Deokar G, Kaja K, El Marssi M, EL Khakani MA, Jouiad M. Recent Progress in the Synthesis of MoS 2 Thin Films for Sensing, Photovoltaic and Plasmonic Applications: A Review. MATERIALS (BASEL, SWITZERLAND) 2021; 14:3283. [PMID: 34198592 PMCID: PMC8231843 DOI: 10.3390/ma14123283] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/16/2021] [Revised: 06/08/2021] [Accepted: 06/10/2021] [Indexed: 11/16/2022]
Abstract
In the surge of recent successes of 2D materials following the rise of graphene, molybdenum disulfide (2D-MoS2) has been attracting growing attention from both fundamental and applications viewpoints, owing to the combination of its unique nanoscale properties. For instance, the bandgap of 2D-MoS2, which changes from direct (in the bulk form) to indirect for ultrathin films (few layers), offers new prospects for various applications in optoelectronics. In this review, we present the latest scientific advances in the field of synthesis and characterization of 2D-MoS2 films while highlighting some of their applications in energy harvesting, gas sensing, and plasmonic devices. A survey of the physical and chemical processing routes of 2D-MoS2 is presented first, followed by a detailed description and listing of the most relevant characterization techniques used to study the MoS2 nanomaterial as well as theoretical simulations of its interesting optical properties. Finally, the challenges related to the synthesis of high quality and fairly controllable MoS2 thin films are discussed along with their integration into novel functional devices.
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Affiliation(s)
- Driss Mouloua
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
- Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Blvd, Lionel–Boulet, Varennes, QC J3X-1S2, Canada
| | - Ahmed Kotbi
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
| | - Geetanjali Deokar
- Physical Science and Engineering Division, Kaust University, Thuwal 23955-6900, Saudi Arabia;
| | - Khaled Kaja
- Laboratoire National de métrologie et d’essais (LNE), 29 av. Roger Hannequin, 78197 Trappes, France;
| | - Mimoun El Marssi
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
| | - My Ali EL Khakani
- Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Blvd, Lionel–Boulet, Varennes, QC J3X-1S2, Canada
| | - Mustapha Jouiad
- Laboratory of Physics of Condensed Matter, University of Picardie Jules Verne, 33 Saint Leu, 80039 Amiens, France; (D.M.); (A.K.); (M.E.M.)
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Sarkar AS, Konidakis I, Demeridou I, Serpetzoglou E, Kioseoglou G, Stratakis E. Robust B-exciton emission at room temperature in few-layers of MoS 2:Ag nanoheterojunctions embedded into a glass matrix. Sci Rep 2020; 10:15697. [PMID: 32973224 PMCID: PMC7518262 DOI: 10.1038/s41598-020-72899-3] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 08/28/2020] [Indexed: 01/30/2023] Open
Abstract
Tailoring the photoluminescence (PL) properties in two-dimensional (2D) molybdenum disulfide (MoS2) crystals using external factors is critical for its use in valleytronic, nanophotonic and optoelectronic applications. Although significant effort has been devoted towards enhancing or manipulating the excitonic emission in MoS2 monolayers, the excitonic emission in few-layers MoS2 has been largely unexplored. Here, we put forward a novel nano-heterojunction system, prepared with a non-lithographic process, to enhance and control such emission. It is based on the incorporation of few-layers MoS2 into a plasmonic silver metaphosphate glass (AgPO3) matrix. It is shown that, apart from the enhancement of the emission of both A- and B-excitons, the B-excitonic emission dominates the PL intensity. In particular, we observe an almost six-fold enhancement of the B-exciton emission, compared to control MoS2 samples. This enhanced PL at room temperature is attributed to an enhanced exciton-plasmon coupling and it is supported by ultrafast time-resolved spectroscopy that reveals plasmon-enhanced electron transfer that takes place in Ag nanoparticles-MoS2 nanoheterojunctions. Our results provide a great avenue to tailor the emission properties of few-layers MoS2, which could find application in emerging valleytronic devices working with B excitons.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, 700 13, Heraklion, Crete, Greece.
| | - Ioannis Konidakis
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, 700 13, Heraklion, Crete, Greece
| | - Ioanna Demeridou
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, 700 13, Heraklion, Crete, Greece
- Physics Department, University of Crete, 710 03, Heraklion, Crete, Greece
| | - Efthymis Serpetzoglou
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, 700 13, Heraklion, Crete, Greece
- Physics Department, University of Crete, 710 03, Heraklion, Crete, Greece
| | - George Kioseoglou
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, 700 13, Heraklion, Crete, Greece
- Department of Materials Science and Technology, University of Crete, 710 03, Heraklion, Crete, Greece
| | - Emmanuel Stratakis
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, 700 13, Heraklion, Crete, Greece.
- Physics Department, University of Crete, 710 03, Heraklion, Crete, Greece.
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