Anti-reflectance investigation of a micro-nano hybrid structure fabricated by dry/wet etching methods

Quintic refractive index profile-based funnel-shaped silicon antireflective structures for enhanced photodetector performance

Antireflection, vital in optoelectronics devices such as solar cells and photodetectors, reduces light reflection and increases absorption. Antireflective structures (ARS), a primary method by which to realize this effect, control the refractive index (RI) profile based on their shape. The antireflection efficiency depends on the refractive index profile, with the quintic RI profile being recognized as ideal for superior antireflection. However, fabricating nano-sized structures with a desired shape, particularly in silicon with a quintic RI profile, has been a challenge. In this study, we introduce a funnel-shaped silicon (Si) ARS with a quintic RI profile. Its antireflective properties are demonstrated through reflectance measurements and by an application to a photodetector surface. Compared to the film Si and cone-shaped ARS types, which are common structures to achieve antireflection, the funnel-shaped ARS showed reflectance of 4.24% at 760 nm, whereas those of the film Si and cone-shaped ARS were 32.8% and 10.6%, respectively. Photodetectors with the funnel-shaped ARS showed responsivity of 0.077 A/W at 950 nm, which is 19.54 times higher than that with the film Si and 2.45 times higher than that with the cone-shaped ARS.

Cutting sinusoidal gratings to enhance light trapping in thin-film silicon solar cells

A crystalline silicon thin-film solar cell with a three-layer sinusoidal grating structure is studied. The structure has a double-layer antireflection layer, and the three-layer grating is located in the double-layer antireflection layer and the passivation layer, respectively. The related parameters of the grating structure are optimized by scanning using finite-difference time-domain. The optimization results show that cutting the sinusoidal grating structure can significantly improve the light absorption efficiency of the cell for near-infrared light (750-1100 nm), and the enhancement effect is mainly in the transverse electric (TE)-polarized light. This is because the localized surface plasmon resonance and optical waveguide mode under TE-polarized light can be fully excited after the sinusoidal structure is cut. The short-circuit current density (J _{S C} ) of the optimized three-layer sinusoidal grating structure is 19.82m A/c m ², which is 112.43% higher than that of the planar structure with the same parameters and 23.18% higher than that of the uncut sinusoidal grating structure with the same parameters.

Real-Time Reflectance Measurement Using an Astigmatic Optical Profilometer

An astigmatic optical profilometer with a commercial optical pickup head provides benefits, such as high resolution, compact size, and low cost. To eliminate artifacts caused by complex materials with different reflectances, a z-axis modulation mode is proposed to obtain quantitative surface morphology by measuring S curves on all image pixels. Moreover, the slope of the linear region in the S curve shows a positive relationship with the surface reflectance. However, the slope was calculated using an offline curve fitting method, which did not allow real-time reflectance imaging. Furthermore, quantitative reflectance data were unavailable because of the lack of calibration. In this study, we propose a novel method for real-time reflectance imaging by measuring the amplitude of a focus error signal (FES). The calibration results displayed a linear relationship between the FES amplitude and reflectance. The reflectance image of a grating sample with chrome patterns on a glass substrate demonstrates accurate reflectance measurements with a micrometer spatial resolution.

Femtosecond Laser Processing Technology for Anti-Reflection Surfaces of Hard Materials

The anti-reflection properties of hard material surfaces are of great significance in the fields of infrared imaging, optoelectronic devices, and aerospace. Femtosecond laser processing has drawn a lot of attentions in the field of optics as an innovative, efficient, and green micro-nano processing method. The anti-reflection surface prepared on hard materials by femtosecond laser processing technology has good anti-reflection properties under a broad spectrum with all angles, effectively suppresses reflection, and improves light transmittance/absorption. In this review, the recent advances on femtosecond laser processing of anti-reflection surfaces on hard materials are summarized. The principle of anti-reflection structure and the selection of anti-reflection materials in different applications are elaborated upon. Finally, the limitations and challenges of the current anti-reflection surface are discussed, and the future development trend of the anti-reflection surface are prospected.

Manufacture of Binary Nanofeatured Polymeric Films Using Nanosphere Lithography and Ultraviolet Roller Imprinting

This paper describes the manufacture of binary nanostructured films utilizing nanosphere lithography and ultraviolet (UV) roller imprinting. To manufacture the binary nanofeatured template, polystyrene nanocolloids of two distinct dimensions (900 and 300 nm) were primarily self-assembly spun coated on a silicon substrate. A roller imprinting facility equipped with polydimethylsiloxane molds and ultraviolet radiation was employed. During the imprinting procedure, the roller was steered by a motor and compressed the ultraviolet-curable polymeric layer against the glass substrate, where the nanofeatured layer was cured by the UV light source. Binary nanofeatured films were thus obtained. The influence of distinct processing variables on the imprinting of nanofeatured films was investigated. The empirical data suggested that with appropriate processing conditions, binary nanofeatured plastic films can be satisfactorily manufactured. It also demonstrated that roller imprinting combined with ultraviolet radiation can offer an easy yet effective method to prepare binary nanofeatured films, with a miniatured processing time and enhanced part quality.

Low-reflective wire-grid polariser sheet in the visible region fabricated by a nanoprinting process

For the construction of next-generation optical products and systems, the evolution of polariser sheets is a necessary requirement. To this end, a low-reflective wire-grid polariser (WGP) sheet for the visible light region is demonstrated, the nanowires of which consist of a sintered body of silver nanoparticle ink. The nanowires are formed by a nanoprinting process using a thermal nanoimprint method and ink filling. This process makes it easier to achieve multiple wafer-scale productions without using sophisticated equipment compared to conventional WGP nanofabrication techniques, which typically employ lithography and elaborate etching processes. The optical characteristics are controlled by the shape of the printed nanowires. A WGP sheet with a luminous degree of polarisation of 99.0%, a total luminous transmittance of 13.6%, and a luminous reflectance of 3.6% is produced. Its low reflectance is achieved through the uneven surface derived from the sintered body of the nanoparticle ink, and the shape of the bottom of the nanowire is derived from the tip shape of the mould structure. Furthermore, the printed WGP sheet has the durability required for the manufacturing of curved products, including sunglasses. The optical structures made of nanoparticle ink using this nanoprinting process have the potential to significantly contribute to the development of fine-structured optical elements with unprecedented functionality.

Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure

High-precision, low-temperature-sensitive microelectromechanical system (MEMS) capacitive accelerometers are widely used in aerospace, automotive, and navigation systems. An analytical study of the temperature drift of bias (TDB) and temperature drift of scale factor (TDSF) for an asymmetric comb capacitive accelerometer is presented in this paper. A five-layer model is established for the equivalent expansion ratio in the TDB and TDSF formulas, and the results calculated by the weighted average of thickness and elasticity modulus method are closest to the results of the numerical simulation. The analytical formulas of TDB and TDSF for an asymmetric structure are obtained. For an asymmetric structure, TDB is only related to thermal deformation and fabrication error. Additionally, half of the fixed electrode distance is not included in the expressions of Δ d and Δ D for asymmetric structures, thus resulting in the TDSF of the asymmetric structure being smaller compared to a symmetric structure with the same structural parameters. The TDSF of the symmetric structure is [-200.2 ppm/°C, -261.6 ppm/°C], while the results of the asymmetric structure are [-11.004 ppm/°C, -72.404 ppm/°C] under the same set of parameters. The parameters of the optimal asymmetric structure are obtained for fabrication guidance using numerical methods. In the experiment, the TDSF and TDB of the packaged structure and the non-packaged structure are compared, and a significant effect of the package on the signal output is found. The TDB is reduced from 3000 to 60 μg/°C, while the TDSF is reduced from 3000 to 140 ppm/°C.

Anti-Reflectance Optimization of Secondary Nanostructured Black Silicon Grown on Micro-Structured Arrays

Owing to its extremely low light absorption, black silicon has been widely investigated and reported in recent years, and simultaneously applied to various disciplines. Black silicon is, in general, fabricated on flat surfaces based on the silicon substrate. However, with three normal fabrication methods-plasma dry etching, metal-assisted wet etching, and femtosecond laser pulse etching-black silicon cannot perform easily due to its lowest absorption and thus some studies remained in the laboratory stage. This paper puts forward a novel secondary nanostructured black silicon, which uses the dry-wet hybrid fabrication method to achieve secondary nanostructures. In consideration of the influence of the structure's size, this paper fabricated different sizes of secondary nanostructured black silicon and compared their absorptions with each other. A total of 0.5% reflectance and 98% absorption efficiency of the pit sample were achieved with a diameter of 117.1 μm and a depth of 72.6 μm. In addition, the variation tendency of the absorption efficiency is not solely monotone increasing or monotone decreasing, but firstly increasing and then decreasing. By using a statistical image processing method, nanostructures with diameters between 20 and 30 nm are the majority and nanostructures with a diameter between 10 and 40 nm account for 81% of the diameters.