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Gupta A, Rotake D, Darji A. Sensing lead ions in water: a comprehensive review on strategies and sensor materials. ANAL SCI 2024; 40:997-1021. [PMID: 38523231 DOI: 10.1007/s44211-024-00547-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 02/25/2024] [Indexed: 03/26/2024]
Abstract
It is well-known fact that elevated lead ions (Pb2+), the third most toxic among heavy metal ions in aqueous systems, pose a threat to human health and aquatic ecosystems when they exceed permissible limits. Pb2+ is commonly found in industrial waste and fertilizers, contaminating water sources and subsequently entering the human body, causing various adverse health conditions. Unlike being expelled, Pb2+ accumulates within the body, posing potential health risks. The harmful impact of presence of Pb2+ in water have prompted researchers to diligently work toward maintaining water quality. Recognizing the importance of Pb2+, this review article makes a sincere and effective effort to address the issues associated with Pb2+. This overview article gives insights into various sensing approaches to detect Pb2+ in water using different sensing materials, including 2-dimensional materials, thiols, quantum dots, and polymers. Herein, different sensing approaches such as electrochemical, optical, field effect transistor-based, micro-electromechanical system-based, and chemi resistive are thoroughly explained. Field effect transistor-based and chemiresistive work on similar principles and are compared on the basis of their fabrication processes and sensing capabilities. In conclusion, future directions for chemiresistive sensors in Pb2+ detection are proposed, emphasizing their simplicity, portability, straightforward functionality, and ease of fabrication. Notably, it sheds light on various thiol and ligand compounds and coupling strategies utilized in Pb2+ detection. This comprehensive study is expected to benefit individuals engaged in Pb2+ detection.
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Affiliation(s)
- Anju Gupta
- Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat, 395007, Gujarat, India
- Department of Biomedical Engineering, Shri Ramdeobaba College of Engineering and Management, Ramdeo Tekdi, Nagpur, 440013, Maharashtra, India
| | - Dinesh Rotake
- Department of Electrical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Hyderabad, 502284, Telangana, India.
| | - Anand Darji
- Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat, 395007, Gujarat, India
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2
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Kim YU, Cho WJ. Enhanced BSA Detection Precision: Leveraging High-Performance Dual-Gate Ion-Sensitive Field-Effect-Transistor Scheme and Surface-Treated Sensing Membranes. BIOSENSORS 2024; 14:141. [PMID: 38534248 DOI: 10.3390/bios14030141] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Revised: 03/11/2024] [Accepted: 03/11/2024] [Indexed: 03/28/2024]
Abstract
Bovine serum albumin (BSA) is commonly incorporated in vaccines to improve stability. However, owing to potential allergic reactions in humans, the World Health Organization (WHO) mandates strict adherence to a BSA limit (≤50 ng/vaccine). BSA detection with conventional techniques is time-consuming and requires specialized equipment. Efficient alternatives such as the ion-sensitive field-effect transistor (ISFET), despite rapid detection, affordability, and portability, do not detect BSA at low concentrations because of inherent sensitivity limitations. This study proposes a silicon-on-insulator (SOI) substrate-based dual-gate (DG) ISFET platform to overcome these limitations. The capacitive coupling DG structure significantly enhances sensitivity without requiring external circuits, owing to its inherent amplification effect. The extended-gate (EG) structure separates the transducer unit for electrical signal processing from the sensing unit for biological detection, preventing chemical damage to the transducer, accommodating a variety of biological analytes, and affording easy replaceability. Vapor-phase surface treatment with (3-Aminopropyl) triethoxysilane (APTES) and the incorporation of a SnO2 sensing membrane ensure high BSA detection efficiency and sensitivity (144.19 mV/log [BSA]). This DG-FET-based biosensor possesses a simple structure and detects BSA at low concentrations rapidly. Envisioned as an effective on-site diagnostic tool for various analytes including BSA, this platform addresses prior limitations in biosensing and shows promise for practical applications.
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Affiliation(s)
- Yeong-Ung Kim
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
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3
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Omar R, Yuan M, Wang J, Sublaban M, Saliba W, Zheng Y, Haick H. Self-powered freestanding multifunctional microneedle-based extended gate device for personalized health monitoring. SENSORS AND ACTUATORS. B, CHEMICAL 2024; 398:134788. [PMID: 38164440 PMCID: PMC10652171 DOI: 10.1016/j.snb.2023.134788] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 10/02/2023] [Accepted: 10/13/2023] [Indexed: 01/03/2024]
Abstract
Online monitoring of prognostic biomarkers is critically important when diagnosing disorders and assessing individuals' health, especially for chronic and infectious diseases. Despite this, current diagnosis techniques are time-consuming, labor-intensive, and performed offline. In this context, developing wearable devices for continuous measurements of multiple biomarkers from body fluids has considerable advantages including availability, rapidity, convenience, and minimal invasiveness over the conventional painful and time-consuming tools. However, there is still a significant challenge in powering these devices over an extended period, especially for applications that require continuous and long-term health monitoring. Herein, a new freestanding, wearable, multifunctional microneedle-based extended gate field effect transistor biosensor is fabricated for online detection of multiple biomarkers from the interstitial fluid including sodium, calcium, potassium, and pH along with excellent electrical response, reversibility, and precision. In addition, a hybrid powering system of triboelectric nanogenerator and solar cell was developed for creating a freestanding, closed-loop platform for continuous charging of the device's battery and integrated with an Internet of Things technology to broadcast the measurements online, suggesting a stand-alone, stable multifunctional tool which paves the way for advanced practical personalized health monitoring and diagnosis.
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Affiliation(s)
- Rawan Omar
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 320003, Israel
| | - Miaomiao Yuan
- The Eighth Affiliated Hospital, Sun Yat-sen University, Shenzhen 518033, PR China
| | - Jing Wang
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 320003, Israel
| | - Majd Sublaban
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 320003, Israel
| | - Walaa Saliba
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 320003, Israel
| | - Youbin Zheng
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 320003, Israel
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ,United Kingdom
| | - Hossam Haick
- Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 320003, Israel
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Fauzi N, Mohd Asri RI, Mohamed Omar MF, Manaf AA, Kawarada H, Falina S, Syamsul M. Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors. MICROMACHINES 2023; 14:325. [PMID: 36838025 PMCID: PMC9966278 DOI: 10.3390/mi14020325] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 01/20/2023] [Accepted: 01/24/2023] [Indexed: 06/18/2023]
Abstract
High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields.
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Affiliation(s)
- Najihah Fauzi
- Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
| | - Rahil Izzati Mohd Asri
- Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
| | - Mohamad Faiz Mohamed Omar
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
| | - Asrulnizam Abd Manaf
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
| | - Hiroshi Kawarada
- Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan
- The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan
| | - Shaili Falina
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
- Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan
| | - Mohd Syamsul
- Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
- Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan
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Kang J, Jang Y, Moon SH, Kang Y, Kim J, Kim Y, Park SK. Symmetrically Ion-Gated In-Plane Metal-Oxide Transistors for Highly Sensitive and Low-Voltage Driven Bioelectronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103275. [PMID: 35240004 PMCID: PMC9069198 DOI: 10.1002/advs.202103275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
To provide a unique opportunity for on-chip scaled bioelectronics, a symmetrically gated metal-oxide electric double layer transistor (EDLT) with ion-gel (IG) gate dielectric and simple in-plane Corbino electrode architecture is proposed. Using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor and IG dielectric layers, low-voltage driven EDLTs with high ionotronic effects can be realized. More importantly, in contrast to the conventional asymmetric rectangular EDLTs which can cause non-uniform potential variation in the active channel layer and eventually degrade the sensing performance, the new symmetrical in-plane type EDLTs achieve high and spatially uniform ion responsive behaviors. The symmetrically gated a-IGZO EDLTs exhibited a responsivity of 129.4% to 5 ppm mercury (Hg2+ ) ions which are approximately three times higher than that with conventional electrode structure (responsivity of 38.5%). To confirm the viability of the new device architectures and the findings, the detailed mechanism of the symmetric gating effects in the in-plane EDLTs with a variety of electrical characterization and 3D fine element analysis simulations is also discussed.
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Affiliation(s)
- Jingu Kang
- School of Electrical and Electronics EngineeringChung‐Ang UniversitySeoul06974Korea
| | - Young‐Woo Jang
- School of Electrical and Electronics EngineeringChung‐Ang UniversitySeoul06974Korea
| | - Sang Hee Moon
- School of Electrical and Electronics EngineeringChung‐Ang UniversitySeoul06974Korea
| | - Youngjin Kang
- School of Advanced Materials Science and EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Jaehyun Kim
- Department of Chemistry and Materials Research CenterNorthwestern University2145 Sheridan RoadEvanstonIL60208USA
| | - Yong‐Hoon Kim
- School of Advanced Materials Science and EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Sung Kyu Park
- School of Electrical and Electronics EngineeringChung‐Ang UniversitySeoul06974Korea
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Li Y, Cui B, Zhang S, Li B, Li J, Liu S, Zhao Q. Ion-Selective Organic Electrochemical Transistors: Recent Progress and Challenges. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107413. [PMID: 35182018 DOI: 10.1002/smll.202107413] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Revised: 01/20/2022] [Indexed: 06/14/2023]
Abstract
The charged species inside biofluids (blood, interstitial fluid, sweat, saliva, urine, etc.) can reflect the human body's physiological conditions and thus be adopted to diagnose various diseases early. Among all personalized health management applications, ion-selective organic electrochemical transistors (IS-OECTs) have shown tremendous potential in point-of-care testing of biofluids due to low cost, ease of fabrication, high signal amplification, and low detection limit. Moreover, IS-OECTs exhibit excellent flexibility and biocompatibility that enable their application in wearable bioelectronics for continuous health monitoring. In this review, the working principle of IS-OECTs and the recent studies of IS-OECTs for performance improvement are reviewed. Specifically, contemporary studies on material design and device optimization to enhance the sensitivity of IS-OECTs are discussed. In addition, the progress toward the commercialization of IS-OECTs is highlighted, and the recently proposed solutions or alternatives are summarized. The main challenges and perspectives for fully exploiting IS-OECTs toward future preventive and personal medical devices are addressed.
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Affiliation(s)
- Yang Li
- College of Electronic and Optical Engineering, and College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing, Jiangsu, 210023, China
| | - Binbin Cui
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China
| | - Shiming Zhang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China
| | - Bingxiang Li
- College of Electronic and Optical Engineering, and College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing, Jiangsu, 210023, China
| | - Jianmin Li
- College of Electronic and Optical Engineering, and College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing, Jiangsu, 210023, China
| | - Shujuan Liu
- State Key Laboratory of Organic Electronics and Information Displays, and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing, Jiangsu, 210023, China
| | - Qiang Zhao
- College of Electronic and Optical Engineering, and College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing, Jiangsu, 210023, China
- State Key Laboratory of Organic Electronics and Information Displays, and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing, Jiangsu, 210023, China
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7
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A quantitative sensing system based on a 3D-printed ion-selective electrode for rapid and sensitive detection of bacteria in biological fluid. Talanta 2022; 238:123040. [PMID: 34801897 DOI: 10.1016/j.talanta.2021.123040] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Revised: 11/01/2021] [Accepted: 11/04/2021] [Indexed: 11/23/2022]
Abstract
Bacterial infections, such as urinary tract infections, are crucial health problems. Here, we report a new potentiometric sensor to detect bacteria sensitively, accurately, and quickly. First, a customizable, 3D printed Ag+ selective electrode was fabricated as the probe. Our 3D printed electrode showed sensitive, linear, and selective responses to Ag+. Compared to commercial Ag+ selective electrodes, ours required less sample volume, shorter responding time, and lower costs. Next, a novel potentiometer was developed with Arduino to couple the electrode for data transducing and transferring, which was programmed to transfer results to cell phones wirelessly. Moreover, a filter was designed to quickly remove interfering species in a biofluid sample (e.g., Cl-). By detecting the lost Ag+ taken by bacteria, the bacterial number could be elucidated. With this sensor system, bacteria numbers could be detected as low as 80 CFU/mL (LOD) within 15 min, which is sufficient for many diagnoses (e.g., urinary tract infection >1000 CFU/mL). An amplification method was presented for single-digit bacteria detection. Overall, we are presenting a bacteria detector with three innovative components: the electrode (signal transduction and detection), the potentiometer (transducer and data processing), and the 3D printed filter (sample preparation), which showed robust and improved (than previously reported ones) analytical merits. The low-cost and customizable (the electrode and the open-source coding) nature enhances the transnationality of the system, especially in underdeveloped areas.
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Shen YC, Wang CP, Liou KL, Tan PH, Wang YC, Wu SC, Yang TY, Yu YJ, Chiang TY, Chih YD, Chang J, Shih JR, Lin CJ, King YC, Chueh YL. Multifunctional Ion-Sensitive Floating Gate Fin Field-Effect Transistor with Three-Dimensional Nanoseaweed Structure by Glancing Angle Deposition Technology. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104168. [PMID: 34821034 DOI: 10.1002/smll.202104168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2021] [Revised: 09/12/2021] [Indexed: 06/13/2023]
Abstract
A multifunctional ion-sensitive floating gate Fin field-effect transistor (ISFGFinFET) for hydrogen and sodium detection is demonstrated. The ISFGFinFET comprises a FGFET and a sensing film, both of which are used to detect and improve sensitivity. The sensitivity of the ISFGFinFET can be adjusted by modulating the coupling effect of the FG. A nanoseaweed structure is fabricated via glancing angle deposition (GLAD) technology to obtain a large sensing area to enhance the sensitivity for hydrogen ion detection. A sensitivity of 266 mV per pH can be obtained using a surface area of 3.28 mm2 . In terms of sodium ion detection, a calix[4]arene sensing film to monitor sodium ions, obtaining a Na+ sensitivity of 432.7 mV per pNa, is used. In addition, the ISFGFinFET demonstrates the functionality of multiple ions detection simultaneously. The sensor arrays composed of 3 × 3 pixels are demonstrated, each of which comprise of an FGFET sensor and a transistor. Furthermore, 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated. The performance of the proposed ISFGFinFET is competitive with that of other state-of-the-art ion sensors.
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Affiliation(s)
- Ying-Chun Shen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chien-Ping Wang
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Kun-Lin Liou
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Po-Hung Tan
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Yi-Chung Wang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Shu-Chi Wu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Tzu-Yi Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Yi-Jen Yu
- Instrument Center, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Tsung-Yu Chiang
- Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Yue-Der Chih
- Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Jonathan Chang
- Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Jiaw-Ren Shih
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Chrong Jung Lin
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Ya-Chin King
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
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Falina S, Syamsul M, Rhaffor NA, Sal Hamid S, Mohamed Zain KA, Abd Manaf A, Kawarada H. Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review. BIOSENSORS 2021; 11:478. [PMID: 34940235 PMCID: PMC8699440 DOI: 10.3390/bios11120478] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2021] [Revised: 11/13/2021] [Accepted: 11/17/2021] [Indexed: 05/16/2023]
Abstract
Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and continuous HMI monitoring is essential. Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. The aim of this review is to provide a condensed overview of the contribution of certain semiconductor substrates in the development of chemical and biosensor FETs for HMI detection in the past decade. A brief introduction of the FET sensor along with its construction and configuration is presented in the first part of this review. Subsequently, the FET sensor deployment issue and FET intrinsic limitation screening effect are also discussed, and the solutions to overcome these shortcomings are summarized. Later, we summarize the strategies for HMIs' electrical detection, mechanisms, and sensing performance on nanomaterial semiconductor FET transducers, including silicon, carbon nanotubes, graphene, AlGaN/GaN, transition metal dichalcogenides (TMD), black phosphorus, organic and inorganic semiconductor. Finally, concerns and suggestions regarding detection in the real samples using FET sensors are highlighted in the conclusion.
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Affiliation(s)
- Shaili Falina
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
- Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan;
| | - Mohd Syamsul
- Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan;
- Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia
| | - Nuha Abd Rhaffor
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
| | - Sofiyah Sal Hamid
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
| | - Khairu Anuar Mohamed Zain
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
| | - Asrulnizam Abd Manaf
- Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; (S.F.); (N.A.R.); (S.S.H.); (K.A.M.Z.)
| | - Hiroshi Kawarada
- Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan;
- The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan
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10
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Chong C, Liu H, Wang S, Chen S. Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor. NANOSCALE RESEARCH LETTERS 2021; 16:34. [PMID: 33576891 PMCID: PMC7881085 DOI: 10.1186/s11671-021-03486-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2020] [Accepted: 01/19/2021] [Indexed: 06/12/2023]
Abstract
In this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules. DM-DSTGTFET adopts double source and trench gate to enhance the on-state current and to generate bidirectional current. In the proposed structure, two cavities are etched over 1 nm gate oxide for biomolecules filling. A 2D simulation in the Technology Computer-Aided Design (TCAD) is adopted for the analysis of sensitivity study. The results show that under low supply voltage, the current sensitivity of the DM-DSTGTFET is as high as 1.38 × 105, and the threshold voltage sensitivity can reach 1.2 V. Therefore, the DM-DSTGTFET biosensor has good application prospects due to its low power consumption and high sensitivity.
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Affiliation(s)
- Chen Chong
- Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Hongxia Liu
- Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
| | - Shulong Wang
- Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
| | - Shupeng Chen
- Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China
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11
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Han S, Yamamoto S, Polyravas AG, Malliaras GG. Microfabricated Ion-Selective Transistors with Fast and Super-Nernstian Response. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004790. [PMID: 33118196 DOI: 10.1002/adma.202004790] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Revised: 08/26/2020] [Indexed: 06/11/2023]
Abstract
Transistor-based ion sensors have evolved significantly, but the best-performing ones rely on a liquid electrolyte as an internal ion reservoir between the ion-selective membrane and the channel. This liquid reservoir makes sensor miniaturization difficult and leads to devices that are bulky and have limited mechanical flexibility, which is holding back the development of high-performance wearable/implantable ion sensors. This work demonstrates microfabricated ion-selective organic electrochemical transistors (OECTs) with a transconductance of 4 mS, in which a thin polyelectrolyte film with mobile sodium ions replaces the liquid reservoir. These devices are capable of selective detection of various ions with a fast response time (≈1 s), a super-Nernstian sensitivity (85 mV dec-1 ), and a high current sensitivity (224 µA dec-1 ), comparing favorably to other ion sensors based on traditional and emerging materials. Furthermore, the ion-selective OECTs are stable with highly reproducible sensitivity even after 5 months. These characteristics pave the way for new applications in implantable and wearable electronics.
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Affiliation(s)
- Sanggil Han
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
| | - Shunsuke Yamamoto
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Sendai, 9808577, Japan
- Department of Biomolecular Engineering, Graduate School of Engineering, Tohoku University, 6-6 Aramaki, Aoba, Sendai, 9808579, Japan
| | - Anastasios G Polyravas
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
| | - George G Malliaras
- Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Ave, Cambridge, CB3 0FA, UK
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Sukesan R, Chen YT, Shahim S, Wang SL, Sarangadharan I, Wang YL. Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device. SENSORS 2019; 19:s19092209. [PMID: 31086067 PMCID: PMC6539896 DOI: 10.3390/s19092209] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2019] [Revised: 04/23/2019] [Accepted: 05/10/2019] [Indexed: 01/10/2023]
Abstract
Mercury ion selective membrane (Hg-ISM) coated extended gate Field Effect transistors (ISM-FET) were used to manifest a novel methodology for ion-selective sensors based on FET’s, creating ultra-high sensitivity (−36 mV/log [Hg2+]) and outweighing ideal Nernst sensitivity limit (−29.58 mV/log [Hg2+]) for mercury ion. This highly enhanced sensitivity compared with the ion-selective electrode (ISE) (10−7 M) has reduced the limit of detection (10−13 M) of Hg2+ concentration’s magnitude to considerable orders irrespective of the pH of the test solution. Systematical investigation was carried out by modulating sensor design and bias voltage, revealing that higher sensitivity and a lower detection limit can be attained in an adequately stronger electric field. Our sensor has a limit of detection of 10−13 M which is two orders lower than Inductively Coupled Plasma Mass Spectrometry (ICP-MS), having a limit of detection of 10−11 M. The sensitivity and detection limit do not have axiomatic changes under the presence of high concentrations of interfering ions. The technology offers economic and consumer friendly water quality monitoring options intended for homes, offices and industries.
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Affiliation(s)
- Revathi Sukesan
- Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Yi-Ting Chen
- Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Suman Shahim
- Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Shin-Li Wang
- Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Indu Sarangadharan
- Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Yu-Lin Wang
- Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
- Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.
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Shahim S, Sukesan R, Sarangadharan I, Wang YL. Multiplexed Ultra-Sensitive Detection of Cr(III) and Cr(VI) Ion by FET Sensor Array in a Liquid Medium. SENSORS (BASEL, SWITZERLAND) 2019; 19:E1969. [PMID: 31035499 PMCID: PMC6539384 DOI: 10.3390/s19091969] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/07/2019] [Revised: 04/23/2019] [Accepted: 04/24/2019] [Indexed: 12/20/2022]
Abstract
Chromium, one of the top five toxic heavy metals ranked according to significance in public health by WHO, exists as Cr(III) which is naturally occurring or Cr(VI) which is anthropogenic in origin. The EPA specifies the maximum contaminant level in drinking water to be 10-6 M or 0.1 mg/L or 100 ppb for the total dissolved Cr. To ensure the water consumed by the population has these pollutants below the safe threshold, this report demonstrates a field effect transistor (FET) based sensor design incorporating a highly target specific ion-selective membrane combined with extended gate technology which manifests sensitivity exceeding the Nernst limit aided by the high field effect in the short gap region of extended gate technology. Characterization and repeated testing of the portable device revealed a commendable calibration sensitivity of 99 mV/log [Cr3+] and 71 mV/log [Cr6+] for Cr(III) and Cr(VI) respectively, well surpassing the Nernst limits of sensitivity and offering a detection limit lower than ion-selective electrodes (10-6 M), and comparable to the expensive benchtop laboratory instrument, ICP-MS. This report presents a robust, easy to fabricate, economic and efficient handheld biosensor to detect the chromium in a liquid sample whether it exists as Cr(III) or Cr(VI).
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Affiliation(s)
- Suman Shahim
- Institute of Nano Engineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Revathi Sukesan
- Institute of Nano Engineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Indu Sarangadharan
- Institute of Nano Engineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Yu-Lin Wang
- Institute of Nano Engineering and Microsystems, National Tsing Hua University, Hsinchu 300, Taiwan.
- Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.
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Tai TY, Sinha A, Sarangadharan I, Pulikkathodi AK, Wang SL, Lee GY, Chyi JI, Shiesh SC, Lee GB, Wang YL. Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum. Anal Chem 2019; 91:5953-5960. [PMID: 30994326 DOI: 10.1021/acs.analchem.9b00353] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
We have developed a swift and simplistic protein immunoassay using aptamer functionalized AlGaN/GaN high electron mobility transistors (HEMTs). The unique design of the sensor facilitates protein detection in a physiological salt environment overcoming charge screening effects, without requiring sample preprocessing. This study reports a tunable and amplified sensitivity of solution-gated electric double layer (EDL) HEMT-based biosensors, which demonstrates significantly enhanced sensitivity by designing a smaller gap between the gate electrode and the detection, and by operating at higher gate voltage. Sensitivity is calculated by quantifying NT-proBNP, a clinical biomarker of heart failure, in buffer and untreated human serum samples. The biosensor depicts elevated sensitivity and high selectivity. Furthermore, detailed investigation of the amplified sensitivity in an increased ionic strength environment is conducted, and it is revealed that a high sensitivity of 80.54 mV/decade protein concentration can be achieved, which is much higher than that of previously reported FET biosensors. This sensor technology demonstrates immense potential in developing surface affinity sensors for clinical diagnostics.
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Affiliation(s)
| | | | | | | | | | - Geng-Yen Lee
- Department of Electrical Engineering , National Central University , Zhongli District, Taoyuan City 320 , Taiwan, R.O.C
| | - Jen-Inn Chyi
- Department of Electrical Engineering , National Central University , Zhongli District, Taoyuan City 320 , Taiwan, R.O.C
| | - Shu-Chu Shiesh
- Department of Medical Laboratory Science and Biotechnology , National Cheng Kung University , Tainan City 701 , Taiwan, R.O.C
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Pulikkathodi AK, Sarangadharan I, Lo CY, Chen PH, Chen CC, Wang YL. Miniaturized Biomedical Sensors for Enumeration of Extracellular Vesicles. Int J Mol Sci 2018; 19:ijms19082213. [PMID: 30060613 PMCID: PMC6121478 DOI: 10.3390/ijms19082213] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2018] [Revised: 07/19/2018] [Accepted: 07/27/2018] [Indexed: 12/21/2022] Open
Abstract
In this research, we have realized a rapid extracellular vesicle (EV) quantification methodology using a high field modulated AlGaN/GaN high electron mobility (HEMT) biosensor. The unique sensing structure facilitated the detection of the sub-cellular components in physiological salt environment without requiring extensive sample pre-treatments. The high field operation of GaN HEMT biosensor provides high sensitivity and wide dynamic range of detection of EVs (10⁷⁻1010 EVs/mL). An antibody specific to the known surface marker on the EV was used to capture them for quantification using an HEMT biosensor. Fluorescence microscopy images confirm the successful capture of EVs from the test solution. The present method can detect EVs in high ionic strength solution, with a short sample incubation period of 5 min, and does not require labels or additional reagents or wash/block steps. This methodology has the potential to be used in clinical applications for rapid EV quantification from blood or serum for the development of diagnostic and prognostic tools.
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Affiliation(s)
- Anil Kumar Pulikkathodi
- Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Indu Sarangadharan
- Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Chiao-Yun Lo
- Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu 300, Taiwan.
- Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Po-Hsuan Chen
- Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Chih-Chen Chen
- Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu 300, Taiwan.
- Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.
| | - Yu-Lin Wang
- Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu 300, Taiwan.
- Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan.
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