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Vashishtha P, Abidi IH, Giridhar SP, Verma AK, Prajapat P, Bhoriya A, Murdoch BJ, Tollerud JO, Xu C, Davis JA, Gupta G, Walia S. CVD-Grown Monolayer MoS 2 and GaN Thin Film Heterostructure for a Self-Powered and Bidirectional Photodetector with an Extended Active Spectrum. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31294-31303. [PMID: 38838350 DOI: 10.1021/acsami.4c03902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Photodetector technology has evolved significantly over the years with the emergence of new active materials. However, there remain trade-offs between spectral sensitivity, operating energy, and, more recently, an ability to harbor additional features such as persistent photoconductivity and bidirectional photocurrents for new emerging application areas such as switchable light imaging and filter-less color discrimination. Here, we demonstrate a self-powered bidirectional photodetector based on molybdenum disulfide/gallium nitride (MoS2/GaN) epitaxial heterostructure. This fabricated detector exhibits self-powered functionality and achieves detection in two discrete wavelength bands: ultraviolet and visible. Notably, it attains a peak responsivity of 631 mAW-1 at a bias of 0V. The device's response to illumination at these two wavelengths is governed by distinct mechanisms, activated under applied bias conditions, thereby inducing a reversal in the polarity of the photocurrent. This work underscores the feasibility of self-powered and bidirectional photocurrent detection but also opens new vistas for technological advancements for future optoelectronic, neuromorphic, and sensing applications.
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Affiliation(s)
- Pargam Vashishtha
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Irfan H Abidi
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Sindhu P Giridhar
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Ajay K Verma
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Pukhraj Prajapat
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Ankit Bhoriya
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Billy J Murdoch
- RMIT Microscopy and Microanalysis Facility, RMIT University, Melbourne 3000, Australia
| | - Jonathan O Tollerud
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Chenglong Xu
- Micro Nano Research Facility, RMIT University, Melbourne 3000, Australia
| | - Jeff A Davis
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Govind Gupta
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
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2
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Panasci SE, Deretzis I, Schilirò E, La Magna A, Roccaforte F, Koos A, Nemeth M, Pécz B, Cannas M, Agnello S, Giannazzo F. Interface Properties of MoS 2 van der Waals Heterojunctions with GaN. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:133. [PMID: 38251098 PMCID: PMC10818867 DOI: 10.3390/nano14020133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Revised: 12/27/2023] [Accepted: 01/03/2024] [Indexed: 01/23/2024]
Abstract
The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm-2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.
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Affiliation(s)
- Salvatore Ethan Panasci
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Ioannis Deretzis
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Emanuela Schilirò
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Antonino La Magna
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Fabrizio Roccaforte
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Antal Koos
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Miklos Nemeth
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Béla Pécz
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Marco Cannas
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy;
| | - Simonpietro Agnello
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy;
- ATEN Center, University of Palermo, Viale delle Scienze Ed. 18, 90128 Palermo, Italy
| | - Filippo Giannazzo
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
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3
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Liang BW, Chang WH, Huang CS, Huang YJ, Chen JH, Li KS, Simbulan KB, Kumar H, Su CY, Kuan CH, Lan YW. Self-powered broadband photodetection enabled by facile CVD-grown MoS 2/GaN heterostructures. NANOSCALE 2023; 15:18233-18240. [PMID: 37943087 DOI: 10.1039/d3nr03877g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Achieving self-powered photodetection without biasing is a notable challenge for photodetectors. In this work, we demonstrate the successful fabrication of large-scale van der Waals epitaxial molybdenum disulfide (MoS2) on a p-GaN/sapphire substrate using a straightforward chemical vapor deposition (CVD) technique. Our research primarily centers on the characterization of these photodetectors produced through this method. The MoS2/GaN heterojunction photodetector showcases a broad and extensive photoresponse spanning from ultraviolet A (UVA) to near-infrared (NIR). When illuminated by a 532 nm laser, its self-powered photoresponse is characterized by a rise time (τr) of ∼18.5 ms and a decay time (τd) of ∼123.2 ms. The photodetector achieves a responsivity (R) of ∼0.13 A W-1 and a specific detectivity (D*) of ∼3.8 × 1010 Jones at zero bias. Additionally, while utilizing a 404 nm laser, the photodetector reaches a maximum R and D* of ∼1.7 × 104 A/W and ∼1.6 × 1013 Jones, respectively, at Vb = 5 V. The operational mechanism of the device can be explained by the diode characteristics involving a tunneling current in the presence of reverse bias. The exceptional performance of these photodetectors can be attributed to the pristine interface between the CVD-grown MoS2 and GaN, providing an impeccably clean tunneling surface. Additionally, our investigation has unveiled that MoS2/GaN heterostructure photodetectors, featuring MoS2 coverage percentages spanning from 20% to 50%, exhibit improved responsivity capabilities at an external bias voltage. As a result, this facile CVD growth technique for MoS2 photodetectors holds significant potential for large-scale production in the manufacturing industry.
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Affiliation(s)
- Bor-Wei Liang
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 30078, Taiwan
| | - Wen-Hao Chang
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan.
| | - Chun-Sheng Huang
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - You-Jia Huang
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan.
| | - Jyun-Hong Chen
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 30078, Taiwan
| | - Kai-Shin Li
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 30078, Taiwan
| | - Kristan Bryan Simbulan
- Research Center for the Natural and Applied Sciences, University of Santo Tomas, Manila 1008, Philippines
| | - Harshvardhan Kumar
- Department of Electronics and Communication Engineering, The LNM Institute of Information Technology, Rupa ki Nangal, Post-Sumel, Via, Jamdoli, Jaipur, Rajasthan 302031, India
| | - Ching-Yuan Su
- Graduate Institute of Energy Engineering, National Central University, Taoyuan, 320317, Taiwan
| | - Chieh-Hsiung Kuan
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yann-Wen Lan
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan.
- Advanced Materials and Green Energy Research Center, National Taiwan Normal University, Taipei 11677, Taiwan
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Španková M, Chromik Š, Dobročka E, Pribusová Slušná L, Talacko M, Gregor M, Pécz B, Koos A, Greco G, Panasci SE, Fiorenza P, Roccaforte F, Cordier Y, Frayssinet E, Giannazzo F. Large-Area MoS 2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2837. [PMID: 37947682 PMCID: PMC10647872 DOI: 10.3390/nano13212837] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 10/19/2023] [Accepted: 10/24/2023] [Indexed: 11/12/2023]
Abstract
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS2 grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (ns from ~1 × 1013 to ~3.4 × 1013 cm-2 from T = 300 K to 500 K), with a donor ionization energy of Ei = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS2/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕB ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS2 on GaN in electronics/optoelectronics.
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Affiliation(s)
- Marianna Španková
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Štefan Chromik
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Edmund Dobročka
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Lenka Pribusová Slušná
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Marcel Talacko
- Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia; (Š.C.); (E.D.); (L.P.S.); (M.T.)
| | - Maroš Gregor
- Faculty of Mathematics, Physics and Informatics, Comenius University Bratislava, 84248 Bratislava, Slovakia;
| | - Béla Pécz
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (B.P.); (A.K.)
| | - Antal Koos
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (B.P.); (A.K.)
| | - Giuseppe Greco
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
| | - Salvatore Ethan Panasci
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
| | - Patrick Fiorenza
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
| | - Fabrizio Roccaforte
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
| | - Yvon Cordier
- CNRS, CRHEA, Université Côte d’Azur, 06560 Valbonne, France; (Y.C.); (E.F.)
| | - Eric Frayssinet
- CNRS, CRHEA, Université Côte d’Azur, 06560 Valbonne, France; (Y.C.); (E.F.)
| | - Filippo Giannazzo
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (G.G.); (S.E.P.); (P.F.); (F.R.); (F.G.)
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5
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Verma SK, Sharma S, Maurya GK, Gautam V, Singh R, Singh A, Kandpal K, Kumar P, Kumar A, Wiemer C. Bi 2Te 2Se and Sb 2Te 3 heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis. Phys Chem Chem Phys 2023; 25:25008-25017. [PMID: 37697977 DOI: 10.1039/d3cp03610c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
Topological insulators have emerged as one of the most promising candidates for the fabrication of novel electronic and optoelectronic devices due to the unique properties of nontrivial Dirac cones on the surface and a narrow bandgap in the bulk. In this work, the Sb2Te3 and Bi2Te2Se materials, and their heterostructure are fabricated by metal-organic chemical vapour deposition and evaporation techniques. Photodetection of these materials and their heterostructure shows that they detect light in a broadband range of 600 to 1100 nm with maximum photoresponse of Sb2Te3, Bi2Te2Se and Sb2Te3/Bi2Te2Se at 1100, 1000, and 1000 nm, respectively. The maximum responsivity values of Sb2Te3, Bi2Te2Se, and their heterostructure are 183, 341.8, and 245.9 A W-1 at 1000 nm, respectively. A computational study has also been done using density functional theory (DFT). Using the first-principles methods based on DFT, we have systematically investigated these topological insulators and their heterostructure's electronic and optical properties. The band structures of Sb2Te3 and Bi2Te2Se thin films (3 QL) and their heterostructure are calculated. The bandgaps of Sb2Te3 and Bi2Te2Se are 26.4 and 23 meV, respectively, while the Sb2Te3/Bi2Te2Se heterostructure shows metallic behaviour. For the optical properties, the dielectric function's real and imaginary parts are calculated using DFT and random phase approximation (RPA). It is observed that these topological materials and their heterostructure are light absorbers in a broadband range, with maximum absorption at 1.90, 2.40, and 3.21 eV.
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Affiliation(s)
- Sandeep Kumar Verma
- Spintronics and Magnetic Materials Laboratory, Indian Institute of Information Technology, Allahabad, UP, India, 211015.
- Department of Physics, Veer Bahadur Singh Purvanchal University, Jaunpur, UP, India, 222003
| | - Sanjay Sharma
- Spintronics and Magnetic Materials Laboratory, Indian Institute of Information Technology, Allahabad, UP, India, 211015.
| | | | - Vidushi Gautam
- Spintronics and Magnetic Materials Laboratory, Indian Institute of Information Technology, Allahabad, UP, India, 211015.
| | - Roshani Singh
- Spintronics and Magnetic Materials Laboratory, Indian Institute of Information Technology, Allahabad, UP, India, 211015.
| | - Ajeet Singh
- Department of Physics, Veer Bahadur Singh Purvanchal University, Jaunpur, UP, India, 222003
| | - Kavindra Kandpal
- Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Allahabad, UP, India, 211015
| | - Pramod Kumar
- Spintronics and Magnetic Materials Laboratory, Indian Institute of Information Technology, Allahabad, UP, India, 211015.
| | - Arun Kumar
- CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864 Agrate Brianza, Italy
- Department of Physics 'E.R. Caianiello', University of Salerno, Via G. Paollo II 132, 84084, Salerno, Italy
| | - Claudia Wiemer
- CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864 Agrate Brianza, Italy
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6
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Ahn B, Kim Y, Kim M, Yu HM, Ahn J, Sim E, Ji H, Gul HZ, Kim KS, Ihm K, Lee H, Kim EK, Lim SC. One-Step Passivation of Both Sulfur Vacancies and SiO 2 Interface Traps of MoS 2 Device. NANO LETTERS 2023; 23:7927-7933. [PMID: 37647420 DOI: 10.1021/acs.nanolett.3c01753] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS2 FET. By applying back-gate bias, protons from an H-TFSI droplet are injected into the MoS2, penetrating deeply enough to reach the SiO2 gate oxide. The characterizations employing low-temperature transport and deep-level transient spectroscopy (DLTS) studies reveal that the trap density of S vacancies in MoS2 drops to the lowest detection level. The temperature-dependent mobility plot on the SiO2 substrate resembles that of the h-BN substrate, implying that dangling bonds in SiO2 are passivated. The carrier mobility on the SiO2 substrate is enhanced by approximately 2200% after the injection.
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Affiliation(s)
- Byungwook Ahn
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yoonsok Kim
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
- Institute of Plasma Technology, Korea Institute of Fusion Energy, Gunsan 54004, Republic of Korea
| | - Meeree Kim
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyang Mi Yu
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jaehun Ahn
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Eunji Sim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyunjin Ji
- Department of Electrical Engineering, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Hamza Zad Gul
- Department of Electrical Engineering, Namal University, 30 km Talagang Road, Mianwali 42250, Pakistan
| | - Keun Soo Kim
- Department of Physics and Graphene Research Institute, Sejong University, Seoul 05006, Republic of Korea
| | - Kyuwook Ihm
- Nano & Interface Research Team, Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Hyoyoung Lee
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Eun Kyu Kim
- Department of Physics, Hanyang University, Seoul 04763, Republic of Korea
| | - Seong Chu Lim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
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7
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Qiao BS, Wang SY, Zhang ZH, Lian ZD, Zheng ZY, Wei ZP, Li L, Ng KW, Wang SP, Liu ZB. Photosensitive Dielectric 2D Perovskite Based Photodetector for Dual Wavelength Demultiplexing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300632. [PMID: 36916201 DOI: 10.1002/adma.202300632] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/28/2023] [Indexed: 05/26/2023]
Abstract
Stacked 2D perovskites provide more possibilities for next generation photodetector with more new features. Compared with its excellent optoelectronic properties, the good dielectric performance of metal halide perovskite rarely comes into notice. Here, a bifunctional perovskite based photovoltaic detector capable of two wavelength demultiplexing is demonstrated. In the Black Phosphorus/Perovskite/MoS2 structured photodetector, the comprehensive utilization of the photosensitive and dielectric properties of 2D perovskite allows the device to work in different modes. The device shows normal continuous photoresponse under 405 nm, while it shows a transient spike response to visible light with longer wavelengths. The linear dynamic range, rise/decay time, and self-powered responsivity under 405 nm can reach 100, 38 µs/50 µs, and 17.7 mA W-1 , respectively. It is demonstrated that the transient spike photocurrent with long wavelength exposure is related to the illumination intensity and can coexist with normal photoresponse. Two waveband-dependent signals can be identified and used to reflect more information simultaneously. This work provides a new strategy for multispectral detection and demultiplexing, which can be used to improve data transfer rates and encrypted communications. This work mode can inspire more multispectral photodetectors with different stacked 2D materials, especially to the optoelectronic application of the wide bandgap, high dielectric photosensitive materials.
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Affiliation(s)
- Bao-Shi Qiao
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China
| | - Su-Yun Wang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin, 300071, P. R. China
| | - Zhi-Hong Zhang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Zhen-Dong Lian
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China
| | - Zhi-Yao Zheng
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, 130033, P. R. China
| | - Zhi-Peng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Lin Li
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics & Electron Engineering, Harbin Normal University, Harbin, 150025, P. R. China
| | - Kar Wei Ng
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China
| | - Shuang-Peng Wang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P. R. China
| | - Zhi-Bo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin, 300071, P. R. China
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8
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Wang B, He JH, Yu B, He X, Xue F. Piezoelectricity-modulated optical recombination dynamics of monolayer-MoS 2/GaN-film heterostructures. NANOSCALE 2023; 15:2036-2043. [PMID: 36520146 DOI: 10.1039/d2nr05850b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Dynamic manipulation of optoelectronic responses by mechanical stimuli is promising for developing wearable electronics and human-machine interfacing. Although 2D-3D hybrid heterostructures can bring advancements in optoelectronics, their dynamic optical responses to external strains remain rarely studied. Here, we demonstrate the strain-tuned recombination dynamics of monolayer-MoS2 and thin-film-GaN heterostructures. We find that optical excitons in the heterostructures, apart from trions, can be markedly modulated by strains. We argue that MoS2 piezoelectric dipoles across the interfaces lead to curved band diagrams, in which optical excitons dissociate into spatially separated quasi-particles and concurrently relocate to the maxima of valence bands and the minima of conduction bands. With the increase in tensile strains, the photoluminescence (PL) intensity of the heterostructures shows quenched responses. Noticeably, the change in PL spectra strongly depends on the directions of the applied strains because of the lateral piezoelectric periodicity of MoS2 flakes. This work not only helps in understanding the underlying physics of the decreased PL intensities upon applying strains but also demonstrates a feasible way (i.e., strains) to manipulate the PL efficiency of 2D-material-based optoelectronics.
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Affiliation(s)
- Baoyu Wang
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| | - Xin He
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310020, China.
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9
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Zulkifli N'AA, Zahir NH, Abdullah Ripain AH, Said SM, Zakaria R. Sulfurization engineering of single-zone CVD vertical and horizontal MoS 2 on p-GaN heterostructures for self-powered UV photodetectors. NANOSCALE ADVANCES 2023; 5:879-892. [PMID: 36756501 PMCID: PMC9890942 DOI: 10.1039/d2na00756h] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/29/2022] [Accepted: 12/26/2022] [Indexed: 06/18/2023]
Abstract
Molybdenum disulfide (MoS2) has been attracting considerable attention due to its excellent electrical and optical properties. We successfully grew high-quality, large-area and uniform few-layer (FL)-MoS2 on p-doped gallium nitride (p-GaN) using a simplified sulfurization technique by the single-zone CVD of a Mo seed layer via E-beam evaporation. Tuning the sulfurization parameters, namely temperature and duration, has been discovered to be an effective strategy for improving MoS2 orientation (horizontally aligned and vertically aligned) and quality, which affects photodetector (PD) performance. The increase in the sulfurization temperature to 850 °C results in improved structural quality and crystallite size. However, a prolonged sulfurization duration of 60 minutes caused the degradation of the film quality. The close lattice match between p-GaN and MoS2 contributes to the excellent quality growth of deposited MoS2. Following this, an n-MoS2/p-GaN heterostructure PD was successfully built by a MoS2 position-selectivity method. We report a highly sensitive and self-powered GaN/MoS2 p-n heterojunction PD with a relatively high responsivity of 14.3 A W-1, a high specific detectivity of 1.12 × 1013 Jones, and a fast response speed of 8.3/13.4 μs (20 kHz) under a UV light of 355 nm at zero-bias voltage. Our PD exhibits superior performance to that of the previously reported MoS2/GaN p-n PD. Our findings suggest a more efficient and straightforward approach to building high-performance self-powered UV PDs.
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Affiliation(s)
| | - Nor Hilmi Zahir
- Low Dimensional Material Research Center (LDMRC), Physics Dept. Faculty of Science, University Malaya 50603 Kuala Lumpur Malaysia
| | | | - Suhana Mohd Said
- Department of Electrical Engineering, Faculty of Engineering, University of Malaya 50603 Kuala Lumpur Malaysia
| | - Rozalina Zakaria
- Photonic Research Centre, University Malaya 50603 Kuala Lumpur Malaysia
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10
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Li Y, Duan J, Berencén Y, Hübner R, Tsai HS, Kuo CN, Lue CS, Helm M, Zhou S, Prucnal S. Formation of a vertical SnSe/SnSe 2 p-n heterojunction by NH 3 plasma-induced phase transformation. NANOSCALE ADVANCES 2023; 5:443-449. [PMID: 36756265 PMCID: PMC9846447 DOI: 10.1039/d2na00434h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/05/2022] [Accepted: 11/25/2022] [Indexed: 06/18/2023]
Abstract
Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing. The integration of two-dimensional materials with complementary metal-oxide-semiconductor (CMOS) technology requires controllable n- and p-type doping. In this work, we demonstrate the fabrication of vertical p-n heterojunctions made of p-type tin monoselenide (SnSe) and n-type tin diselenide (SnSe2). The p-n heterojunction is created in a single flake by the NH3-plasma-assisted phase transformation from SnSe2 to SnSe. We show that the transformation rate and crystal quality strongly depend on plasma parameters like plasma power, temperature, partial pressure, NH3 flow, and duration of plasma treatment. With optimal plasma parameters, the full transformation of SnSe2 flakes into SnSe is achieved within a few seconds. The crystal quality and the topography of the fabricated SnSe-SnSe2 heterostructures are investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy. The formation of a p-n junction is verified by current-voltage measurements.
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Affiliation(s)
- Yi Li
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstrasse 400 D-01328 Dresden Germany
- Technische Universität Dresden D-01062 Dresden Germany
| | - Juanmei Duan
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstrasse 400 D-01328 Dresden Germany
- Technische Universität Dresden D-01062 Dresden Germany
| | - Yonder Berencén
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstrasse 400 D-01328 Dresden Germany
| | - René Hübner
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstrasse 400 D-01328 Dresden Germany
| | - Hsu-Sheng Tsai
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstrasse 400 D-01328 Dresden Germany
| | - Chia-Nung Kuo
- Department of Physics, National Cheng Kung University Tainan 70101 Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology Taipei 10601 Taiwan
| | - Chin Shan Lue
- Department of Physics, National Cheng Kung University Tainan 70101 Taiwan
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology Taipei 10601 Taiwan
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstrasse 400 D-01328 Dresden Germany
- Technische Universität Dresden D-01062 Dresden Germany
| | - Shengqiang Zhou
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstrasse 400 D-01328 Dresden Germany
| | - Slawomir Prucnal
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstrasse 400 D-01328 Dresden Germany
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11
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Arafat A, Islam MS, Ferdous N, Islam ASMJ, Sarkar MMH, Stampfl C, Park J. Atomistic reaction mechanism of CVD grown MoS 2 through MoO 3 and H 2S precursors. Sci Rep 2022; 12:16085. [PMID: 36167969 PMCID: PMC9515180 DOI: 10.1038/s41598-022-20531-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 09/14/2022] [Indexed: 11/09/2022] Open
Abstract
Chemical vapor deposition (CVD) through sulfidation of MoO3 is one of the most important synthesis techniques to obtain large-scale and high-quality two-dimensional (2D) MoS2. Recently, H2S precursor is being used in the CVD technique to synthesize 2D MoS2. Although several studies have been carried out to examine the mechanism of MoS2 growth in the presence of sulfur and MoO3 precursors, the growth of MoS2 in the presence of H2S precursor has largely remained unknown. In this study, we present a Reactive molecular dynamics (RMD) simulation to investigate the reaction mechanism of MoS2 from MoO3 and H2S precursors. The intermediate molecules formation, the reason behind those formations, and the surface compositions of MoOxSyHz during the initial steps of CVD have all been quantified. Surprisingly, a sudden separation of sulfur atoms from the surface was observed in the H2S precursor system due to the substantial oxygen evolution after 1660 K. The sulfur detachments and oxygen evolution from the surface were found to have a linear relationship. In addition, the intermediate molecules and surface bonds of MoS2 synthesized by MoO3 and H2S precursors were compared to those of a system using S2 and MoO3 precursors. The most stable subsidiary formation from the H2S precursor was found to be H2O, whereas in case of S2 precursor it was SO. These results provide a valuable insight in the formation of large-scale and high-quality 2D MoS2 by the CVD technique.
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Affiliation(s)
- Abdullah Arafat
- Department of Materials Science and Engineering, Khulna University of Engineering & Technology, Khulna, 9203, Bangladesh
| | - Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna, 9203, Bangladesh. .,Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV, 89557, USA.
| | - Naim Ferdous
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV, 89557, USA
| | - A S M Jannatul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna, 9203, Bangladesh
| | - Md Mosarof Hossain Sarkar
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna, 9203, Bangladesh
| | - Catherine Stampfl
- School of Physics, The University of Sydney, Sydney, NSW, 2006, Australia
| | - Jeongwon Park
- School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON, K1N 6N5, Canada.,Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV, 89557, USA
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12
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Yu MS, Jesudass SC, Surendran S, Kim JY, Sim U, Han MK. Synergistic Interaction of MoS 2 Nanoflakes on La 2Zr 2O 7 Nanofibers for Improving Photoelectrochemical Nitrogen Reduction. ACS APPLIED MATERIALS & INTERFACES 2022; 14:31889-31899. [PMID: 35816758 DOI: 10.1021/acsami.2c05653] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ammonia is a suitable hydrogen carrier with each molecule accounting for up to 17.65% of hydrogen by mass. Among various potential ammonia production methods, we adopt the photoelectrochemical (PEC) technique, which uses solar energy as well as electricity to efficiently synthesize ammonia under ambient conditions. In this article, we report MoS2@La2Zr2O7 heterostructures designed by incorporating two-dimensional (2D)-MoS2 nanoflakes on La2Zr2O7 nanofibers (MoS2@LZO) as photoelectrocatalysts. The MoS2@LZO heterostructures are synthesized by a facile hydrothermal route with electrospun La2Zr2O7 nanofibers and Mo precursors. The MoS2@LZO heterostructures work synergistically to amend the drawbacks of the individual MoS2 electrocatalysts. In addition, the harmonious activity of the mixed phase of pyrochlore/defect fluorite-structured La2Zr2O7 nanofibers generates an interface that aids in increased electrocatalytic activity by enriching oxygen vacancies in the system. The MoS2@LZO electrocatalyst exhibits an enhanced Faradaic efficiency and ammonia yield of approximately 2.25% and 10.4 μg h-1 cm-2, respectively, compared to their corresponding pristine samples. Therefore, the mechanism of improving the PEC ammonia production performance by coupling oxygen-vacant sites to the 2D-semiconductor-based electrocatalysts has been achieved. This work provides a facile strategy to improve the activity of PEC catalysts by designing an efficient heterostructure interface for PEC applications.
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Affiliation(s)
- Min Seo Yu
- Department of Materials Science & Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Sebastian Cyril Jesudass
- Department of Materials Science & Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Subramani Surendran
- Hydrogen Energy Technology Laboratory, Korea Institute of Energy Technology (KENTECH), 200 Hyeoksin-ro, Naju, Jeonnam 58330, Republic of Korea
| | - Joon Young Kim
- Hydrogen Energy Technology Laboratory, Korea Institute of Energy Technology (KENTECH), 200 Hyeoksin-ro, Naju, Jeonnam 58330, Republic of Korea
- Research Institute, NEEL Sciences, INC., Gwangju 61186, South Korea
| | - Uk Sim
- Hydrogen Energy Technology Laboratory, Korea Institute of Energy Technology (KENTECH), 200 Hyeoksin-ro, Naju, Jeonnam 58330, Republic of Korea
- Research Institute, NEEL Sciences, INC., Gwangju 61186, South Korea
| | - Mi-Kyung Han
- Department of Materials Science & Engineering, Chonnam National University, Gwangju 61186, South Korea
- Research Institute, NEEL Sciences, INC., Gwangju 61186, South Korea
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13
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Song Y, Li Y, He Y, Wei H, Qiu P, Hu X, Su Z, Jiang Y, Peng M, Zheng X. Two-Step Deposition of an Ultrathin GaN Film on a Monolayer MoS 2 Template. ACS APPLIED MATERIALS & INTERFACES 2022; 14:16866-16875. [PMID: 35377136 DOI: 10.1021/acsami.2c00824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ultrathin gallium nitride (GaN) application can be profoundly influenced by its quality, especially the issue of amorphous interfacial layers formed on conventional substrates. Herein, we report a two-step deposition of an ultrathin GaN film via the plasma-enhanced atomic layer deposition (PEALD) technique on a mono-MoS2 template over a SiO2/Si substrate for quality improvement, by starting the deposition temperature at 260 °C and then ramping it to 320 °C. It was found that a lower initiating deposition temperature could be conducive to maintaining the mono-MoS2 template to support the subsequent growth of GaN. Compared to the control group of one-step high-temperature deposition at 320 °C, ideal layer-by-layer film growth is achieved at the low temperature of the two-step method instead of island formation, leading to the direct crystallization of GaN on the substrate with a rather sharp interface. Structural and chemical characterizations show that this two-step method produces a preferred [0001] orientation of the film originating from the interface region. Additionally, the improved two-step ultrathin GaN displays a smooth surface roughness as low as 0.58 nm, a low oxygen impurity concentration of 3.6%, and a nearly balanced Ga/N stoichiometry of 0.95:1. Our work paves a possible way to the feasible fabrication of ultrathin high-quality PEALD-GaN, and it is promising for better performance of relevant devices.
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Affiliation(s)
- Yimeng Song
- School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yangfeng Li
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yingfeng He
- School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China
| | - Huiyun Wei
- School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China
| | - Peng Qiu
- School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiaotao Hu
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhaole Su
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yang Jiang
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Mingzeng Peng
- School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xinhe Zheng
- School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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14
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Liu Y, Fang Y, Yang D, Pi X, Wang P. Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:183001. [PMID: 35134786 DOI: 10.1088/1361-648x/ac5310] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Accepted: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future.
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Affiliation(s)
- Ying Liu
- State Key Laboratory of Silicon Materials and School of Materials, Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310007, People's Republic of China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, People's Republic of China
| | - Yanjun Fang
- State Key Laboratory of Silicon Materials and School of Materials, Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310007, People's Republic of China
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials, Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310007, People's Republic of China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, People's Republic of China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials and School of Materials, Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310007, People's Republic of China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, People's Republic of China
| | - Peijian Wang
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311215, People's Republic of China
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15
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Sorifi S, Kaushik S, Singh R. A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors. NANOSCALE ADVANCES 2022; 4:479-490. [PMID: 36132701 PMCID: PMC9419784 DOI: 10.1039/d1na00659b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Accepted: 11/10/2021] [Indexed: 05/04/2023]
Abstract
We report on the fabrication of a vertical 2D/3D heterojunction diode between gallium selenide (GaSe) and silicon (Si), and describe its photoresponse properties. Kelvin probe force microscopy (KPFM) has been employed to investigate the surface potentials of the GaSe/Si heterostructure, leading to the evaluation of the value of the conduction band offset at the heterostructure interface. The current-voltage measurements on the heterojunction device display a diode-like nature. This diode-like nature is attributed to the type-II band alignment that exists at the p-n interface. The key parameters of a photodetector, such as photoresponsivity, detectivity, and external quantum efficiency, have been calculated for the fabricated device and compared with those of other similar devices. The photodetection measurements of the GaSe/Si heterojunction diode show excellent performance of the device, with high photoresponsivity, detectivity, and EQE values of ∼2.8 × 103 A W-1, 6.2 × 1012 Jones, and 6011, respectively, at a biasing of -5 V. Even at zero biasing, a high photoresponsivity of 6 A W-1 was obtained, making it a self-powered device. Therefore, the GaSe/Si self-driven heterojunction diode has promising potential in the field of efficient optoelectronic devices.
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Affiliation(s)
- Sahin Sorifi
- Department of Physics, Indian Institute of Technology Delhi New Delhi 110016 India
| | - Shuchi Kaushik
- Department of Physics, Indian Institute of Technology Delhi New Delhi 110016 India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi New Delhi 110016 India
- Nanoscale Research Facility, Indian Institute of Technology Delhi New Delhi 110016 India
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16
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Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices. COATINGS 2021. [DOI: 10.3390/coatings11040425] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
We developed silver-doped Cd1–xAgxO thin films (where x = 0, 0.01, 0.02, 0.03 and 0.04) on amorphous glass substrate by an automated nebulizer spray pyrolysis set-up. The XRD patterns show rock salt cubic crystal structures, and the crystallite sizes vary with respect to Ag doping concentrations. SEM images exhibited a uniform distribution of grains with the addition of Ag; this feature could support the enhancement of electron mobility. The transmittance spectra reveal that all films show high transmittance in the visible region with the observed bandgap of about 2.40 eV. The room temperature photoluminescence (PL) studies show the increase of near-band-edge (NBE) emission of the films prepared by different Ag doping levels, resulting in respective decreases in the bandgaps. The photodiode performance was analyzed for the fabricated p-Si/n-Cd1–xAgxO devices. The responsivity, external quantum efficiency and detectivity of the prepared p-Si/n-Cd1–xAgxO device were investigated. The repeatability of the optimum (3 at.% Ag) photodiode was also studied. The present investigation suggests that Cd1–xAgxO thin films are the potential candidates for various industrial and photodetector applications.
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17
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Desai P, Todankar B, Ranade AK, Kondo M, Dewa T, Tanemura M, Kalita G. Synthesis of MoS
2
Layers on GaN Using Ammonium Tetrathiomolybdate for Heterojunction Device Applications. CRYSTAL RESEARCH AND TECHNOLOGY 2021. [DOI: 10.1002/crat.202000198] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Pradeep Desai
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Bhagyashri Todankar
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Ajinkya K. Ranade
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Masaharu Kondo
- Department of Life Science and Applied Chemistry Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Takehisa Dewa
- Department of Life Science and Applied Chemistry Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Masaki Tanemura
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
| | - Golap Kalita
- Department of Physical Science and Engineering Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
- Frontier Research Institute for Material Science Nagoya Institute of Technology Gokiso‐cho, Showa‐ku Nagoya 466‐8555 Japan
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18
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Ezhilmaran B, Dhanasekar M, Bhat SV. Solution processed transparent anatase TiO 2 nanoparticles/MoO 3 nanostructures heterojunction: high performance self-powered UV detector for low-power and low-light applications. NANOSCALE ADVANCES 2021; 3:1047-1056. [PMID: 36133282 PMCID: PMC9419760 DOI: 10.1039/d0na00780c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2020] [Accepted: 12/17/2020] [Indexed: 05/04/2023]
Abstract
Ultraviolet (UV) photodetectors are considered as the major players in energy saving technology of the future. Efforts are needed to further develop such devices, which are capable of operating efficiently at low driving potential as well as with weak illumination. Herein, we report an all-oxide, highly transparent TiO2/MoO3 bilayer film, with nanoparticulate anatase TiO2 as the platform, fabricated by a simple solution based method and demonstrate its use in UV photodetection. Photoconductivity measurement with 352 nm light reveals the self-powered UV detection capability of the device due to the built-in potential at the bilayer interface. The device exhibits a high photoresponsivity (46.05 A W-1), detectivity (2.84 × 1012 Jones) and EQE (16 223%) even with a weak illumination of 76 μW cm-2, at a low bias of only -1 V. The self-powered performance of the bilayer device is comparable to that of commercial Si photodetectors as well as other such UV detectors reported based on metal oxide heterojunctions. The improved and faster photoresponse shown by the device is due to the formation of an effective heterojunction, as evidenced by XPS, electrochemical and I-V studies. It can be further attributed to the better charge transport through the densely aligned nanostructures, reduced recombination and the better mobility of anatase TiO2 nanoparticles. The performance is best-in-class and proves the potential of the transparent heterojunction to be used in highly responsive, self-powered UV detectors for low bias, low light applications.
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Affiliation(s)
- Bhuvaneshwari Ezhilmaran
- SRM Research Institute, SRM Institute of Science and Technology Kattankulathur Kancheepuram-603203 India
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology Kattankulathur Kancheepuram-603203 India
| | - M Dhanasekar
- SRM Research Institute, SRM Institute of Science and Technology Kattankulathur Kancheepuram-603203 India
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology Kattankulathur Kancheepuram-603203 India
| | - S Venkataprasad Bhat
- SRM Research Institute, SRM Institute of Science and Technology Kattankulathur Kancheepuram-603203 India
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology Kattankulathur Kancheepuram-603203 India
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19
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Choi JM, Jang HY, Kim AR, Kwon JD, Cho B, Park MH, Kim Y. Ultra-flexible and rollable 2D-MoS 2/Si heterojunction-based near-infrared photodetector via direct synthesis. NANOSCALE 2021; 13:672-680. [PMID: 33346769 DOI: 10.1039/d0nr07091b] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Atomic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for application in various optoelectronic devices such as image sensors, biomedical imaging systems, and consumer electronics and in diverse spectroscopic analyses. However, a complicated fabrication process, involving transfer and alignment of as-synthesized 2D layers onto flexible target substrates, hinders the development of flexible high-performance heterojunction-based photodetectors. Herein, an ultra-flexible 2D-MoS2/Si heterojunction-based photodetector is successfully fabricated through atmospheric-pressure plasma enhanced chemical vapor deposition, which enables the direct deposition of multi-layered MoS2 onto a flexible Si substrate at low temperature (<200 °C). The photodetector is responsive to near infrared light (λ = 850 nm), showing responsivity of 10.07 mA W-1 and specific detectivity (D*) of 4.53 × 1010 Jones. The measured photocurrent as a function of light intensity exhibits good linearity with a power law exponent of 0.84, indicating negligible trapping/de-trapping of photo-generated carriers at the heterojunction interface, which facilitates photocarrier collection. Furthermore, the photodetectors can be bent with a small bending radius (5 mm) and wrapped around a glass rod, showing excellent photoresponsivity under various bending radii. Hence, the device exhibits excellent flexibility, rollability, and durability under harsh bending conditions. This photodetector has significant potential for use in next-generation flexible and patchable optoelectronic devices.
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Affiliation(s)
- Jung-Min Choi
- Materials Center for Energy Convergence, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea. and School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan 46241, Republic of Korea.
| | - Hye Yeon Jang
- Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Chougju, Chungbuk 28644, Republic of Korea.
| | - Ah Ra Kim
- Materials Center for Energy Convergence, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea.
| | - Jung-Dae Kwon
- Materials Center for Energy Convergence, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea.
| | - Byungjin Cho
- Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Chougju, Chungbuk 28644, Republic of Korea.
| | - Min Hyuk Park
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan 46241, Republic of Korea.
| | - Yonghun Kim
- Materials Center for Energy Convergence, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea.
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20
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Srivastava V, Mishra P, Sunny. CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures. Sci Rep 2020; 10:11131. [PMID: 32636424 PMCID: PMC7341851 DOI: 10.1038/s41598-020-67950-2] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Accepted: 06/11/2020] [Indexed: 11/09/2022] Open
Abstract
Heterostructures (HS) have always been in attraction due to their inherited properties and different important applications. Integration of a phase-change material (PCM) with HS can tremendously extend the operating and application range using the "phase-tuning" of PCM for any optoelectronic devices. In the present study, we report a detailed study of electrical and optoelectronic characteristics of a p-p and p-n HS combining Ge2Sb2Te5 (GST) and Si. Reasonable 2 order of resistance switching is achieved by thermal annealing. The changes in optical properties are analysed using Ellipsometry, UV-Vis-NIR and Raman spectroscopy to speculate the optoelectronic behaviour of GST/Si samples. The optical and electrical characterization were analysed with aluminium (Al), platinum (Pt) and Ti/Au contacts. Appreciable rectifications varying from 500 to 1,000 at lower voltages are achieved with different contacts for both phases of GST. The change in rectification amount and current polarity are obtained with different kinds of contacts and at different incident wavelengths indicating different mechanisms of charge separation and collection. Responsivity of more than 9 A/W with < 1,000 photo-current to dark-current ratio is demonstrated in wavelength range of 0.8-2 μm under moderate range of biasing under ~ μW source power illumination. The characteristics obtained were justified with the prediction of band alignment with the help of work-function difference measurement by Kelvin-probe force microscopy and carrier density measurement by Hall experiment. Our results provide understanding to the opto-electrical behaviour of a heterojunction made of stacking PCM (GST) on Si highlighting their future use in photonic/optoelectronic-integrated circuits.
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Affiliation(s)
- Vibhu Srivastava
- Department of Electronics and Communication Engineering, Indian Institute of Information Technology Allahabad, Prayagraj, 211015, India
| | - Prateek Mishra
- Department of Electronics and Communication Engineering, Indian Institute of Information Technology Allahabad, Prayagraj, 211015, India
| | - Sunny
- Department of Electronics and Communication Engineering, Indian Institute of Information Technology Allahabad, Prayagraj, 211015, India.
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21
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Premkumar S, Nataraj D, Bharathi G, Ramya S, Thangadurai TD. Highly Responsive Ultraviolet Sensor Based on ZnS Quantum Dot Solid with Enhanced Photocurrent. Sci Rep 2019; 9:18704. [PMID: 31822730 PMCID: PMC6904578 DOI: 10.1038/s41598-019-55097-8] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2019] [Accepted: 11/19/2019] [Indexed: 11/11/2022] Open
Abstract
Detection of visible blind UV radiation is not only interesting but also of technologically important. Herein, we demonstrate the efficient detection of UV radiation by using cluster like ZnS quantum dot solid nanostructures prepared by simple reflux condensation technique. The short-chain ligand 3-mercaptopropionic acid (MPA) involved in the synthesis lead to the cluster like formation of ZnS quantum dots into solids upon prolonged synthesis conditions. The ZnS QD solid formation resulted in the strong delocalization of electronic wave function between the neighboring quantum dots. It increases the photocurrent value, which can be further confirmed by the decrease in the average lifetime values from 64 to 4.6 ns upon ZnS cluster like QD solid formation from ZnS QDs. The ZnS quantum dot solid based UV sensor shows good photocurrent response and a maximum responsivity of 0.31 (A/W) at a wavelength of 390 nm, is not only competitive when compared with previous reports but also better than ZnS and metal oxide-based photodetectors. The device exhibits a high current value under low-intensity UV light source and an on/off ratio of IUV/Idark = 413 at zero biasing voltage with a fast response. Further, photocurrent device has been constructed using ZnS quantum dot solid nanostructures with graphene hybrids as an active layer to improve the enhancement of photoresponsivity.
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Affiliation(s)
- Sellan Premkumar
- Quantum Materials and Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India.
- School of Chemistry and Chemical Engineering, Tianjin Polytechnic University, Tianjin, 300387, China.
- Tianjin Key Laboratory of Green Chemistry and Process Engineering, and School of Material Science and Engineering, Tianjin Polytechnic University, Tianjin, 300387, China.
| | - Devaraj Nataraj
- Quantum Materials and Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India.
- UGC-CPEPA Centre for Advanced Studies in Physics for the development of Solar Energy Materials and Devices, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India.
| | - Ganapathi Bharathi
- Quantum Materials and Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India
| | - Subramaniam Ramya
- Quantum Materials and Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India
| | - T Daniel Thangadurai
- Department of Nanoscience and Technology, Sri Ramakrishna Engineering College, Coimbatore, Tamil Nadu, 641022, India
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