Highly Stable Persistent Photoconductivity with Suspended Graphene Nanoribbons

Abnormal Relaxation Behavior of Excited Electrons in the Flat Band of Kagome Compound Nb3Cl8

Carrier dynamics is crucial in semiconductors, and it determines their conductivity, response time, and overall functionality. In flat bands (FBs), carriers with high effective masses are predicted to host unconventional transport properties. The FBs usually overlap with other trivial energy bands, however, making it difficult to accurately distinguish their carrier dynamics. In this paper, we have investigated the flat-band carrier dynamics of excited electrons in Nb3Cl8, which hosts ideal nonoverlapping FBs near the Fermi level. The optical transition between Hubbard bands is abnormally weakened, exhibiting weak interband absorption and its related slow photoresponse with a time constant of ∼120 s, which are associated with flat-band Mottness-induced large electron effective mass and parity-forbidden transitions. Besides, the localized states created by chlorine vacancies also act as trapping centers for carriers with a time constant of ∼600 s, which are similar to those of the compact localized states of the FB, making the relaxation behavior even more extraordinary. The presence and impacts of atomic defects are confirmed experimentally and theoretically. This work has revealed the abnormal flat-band carrier dynamics of Nb3Cl8, which is essential for understanding the optical, electrical, and thermal transport properties of flat-band materials.

GaOx@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity

Flexible optoelectronic synaptic devices that functionally imitate the neural behavior with tunable optoelectronic characteristics are crucial to the development of advanced bioinspired neural networks. In this work, amorphous oxide-decorated GaN nanowire arrays (GaO_x@GaN NWAs) are prepared on flexible graphite paper. A GaO_x@GaN NWA-based flexible device has tunable persistent photoconductivity (PPC) and shows a conversible fast/slow decay process (SDP). Photoconductivity can be modulated by single or double light pulses with different illumination powers and biases. PPC gives rise to the high-performance SDP such as a long decay time of 2.3 × 10⁵ s. The modulation mechanism is proposed and discussed. Our results reveal an innovative and efficient strategy to produce decorated NWAs on a flexible substrate with tunable optoelectronic properties and exhibit potential for flexible neuromorphic system applications.

Single-Layer Zirconium Dihalides ZrX2 (X = Cl, Br, and I) with Abnormal Ferroelastic Behavior and Strong Anisotropic Light Absorption Ability

Recently, two-dimensional (2D) metal halides have brought out an intensive interest for their unique mechanical, electronic, magnetic, and topological properties. Here, we theoretically report the existence of the single-layer (SL) zirconium dihalide materials ZrX₂ (X = Cl, Br, and I) using first-principles calculations. SL ZrX₂, which can be obtained from its bulk phase through simple mechanical exfoliation, shows the dynamic, thermodynamic, and mechanical stability. Halogen atoms can effectively tune the electronic structure, dipole moment transition, band alignment, and light absorption. Specifically, ZrX₂ monolayers intrinsically exhibit a ferroelasticity with an abnormal 120° orientation rotation, possessing a moderate switching barrier of 24-39 meV/atom. Importantly, we observe superior anisotropic light absorption responses on SL ZrX₂ in the visible region. Besides, a series of ZrX₂-based excitonic solar cells have been proposed, which hold a large power conversion efficiency limit of 12.4-18.7%.

Group 11 Transition-Metal Halide Monolayers: High Promises for Photocatalysis and Quantum Cutting

Recently, two-dimensional (2D) metal halides have triggered an enormous interest for their tunable mechanical, electronic, magnetic, and topological properties, greatly enriching the family of 2D materials. Here, based on first-principles calculations, we report a systematic study of group 11 transition-metal halide MX (M = Cu, Ag, Au; X = Cl, Br, I) monolayers. Among them, CuBr, CuI, AgBr, and AgI monolayers exhibit high thermodynamic, dynamic, and mechanic stability. The four stable monolayers have a direct band gap of ∼3.12-3.36 eV and possess high carrier mobility (∼10³ cm² V^-1 s^-1), suggestive of future photocatalysts for water splitting applications. What is more, the simulations of optical properties confirm that the stable MX monolayers hold the potential for further applications in ultraviolet optical devices and quantum cutting solar materials.