Highly transparent light emitting diodes on graphene encapsulated Cu nanowires network

A Review on 1-D Nanomaterials: Scaling-Up with Gas-Phase Synthesis

Nanowire-like materials exhibit distinctive properties comprising optical polarisation, waveguiding, and hydrophobic channelling, amongst many other useful phenomena. Such 1-D derived anisotropy can be further enhanced by arranging many similar nanowires into a coherent matrix, known as an array superstructure. Manufacture of nanowire arrays can be scaled-up considerably through judicious use of gas-phase methods. Historically, the gas-phase approach however has been extensively used for the bulk and rapid synthesis of isotropic 0-D nanomaterials such as carbon black and silica. The primary goal of this review is to document recent developments, applications, and capabilities in gas-phase synthesis methods of nanowire arrays. Secondly, we elucidate the design and use of the gas-phase synthesis approach; and finally, remaining challenges and needs are addressed to advance this field.

Upconversion under Photon Trapping in ZnO/BN Nanoarray: An Ultrahigh Responsivity Solar-Blind Photodetecting Paper

Solar-blind photodetectors (PDs) are widely applicable in special, military, medical, environmental, and commercial fields. However, high performance and flexible PD for deep ultraviolet (UV) range is still a challenge. Here, it is demonstrated that an upconversion of photon absorption beyond the energy bandgap is achieved in the ZnO nanoarray/h-BN heterostructure, which enables the ultrahigh responsivity of a solar-blind photodetecting paper. The direct growth of ultralong ZnO nanoarray on polycrystalline copper paper induced by h-BN 2D interlayer is obtained. Meanwhile, strong photon trapping takes place within the ZnO nanoarray forest through the cyclic state transition of surface oxygen ions, resulting in an extremely high absorption efficiency (> 99.5%). A flexible photodetecting paper is fabricated for switchable detections between near UV and deep UV signals by critical external bias. The device shows robust reliability, ultrahigh responsivity up to 700 A W^-1 @ 265-276 nm, and high photoconductive gain of ≈2 × 10³ . A negative differential resistance effect is revealed for driving the rapid transfer of up-converted electrons between adjacent energy valleys (Γ to A) above the critical bias (3.9 V). The discovered rationale and device structure are expected to bring high-efficiency deep UV detecting and future wearable applications.

Graphene-Based Hybrid Functional Materials

Graphene is a 2D material combining numerous outstanding physical properties, including high flexibility and strength, extremely high thermal conductivity and electron mobility, transparency, etc., which make it a unique testbed to explore fundamental physical phenomena. Such physical properties can be further tuned by combining graphene with other nanomaterials or (macro)molecules to form hybrid functional materials, which by design can display not only the properties of the individual components but also exhibit new properties and enhanced characteristics arising from the synergic interaction of the components. The implementation of the hybrid approach to graphene also allows boosting the performances in a multitude of technological applications. This review reports the hybrids formed by graphene combined with other low-dimensional nanomaterials of diverse dimensionality (0D, 1D, and 2D) and (macro)molecules, with emphasis on the synthetic methods. The most important applications of these hybrids in the fields of sensing, water purification, energy storage, biomedical, (photo)catalysis, and opto(electronics) are also reviewed, with a special focus on the superior performances of these hybrids compared to the individual, nonhybridized components.

Wafer-scale transfer route for top-down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique

The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top-down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).

Atomic Layers of Graphene for Microbial Corrosion Prevention

Graphene is a promising material for many biointerface applications in engineering, medical, and life-science domains. Here, we explore the protection ability of graphene atomic layers to metals exposed to aggressive sulfate-reducing bacteria implicated in corrosion. Although the graphene layers on copper (Cu) surfaces did not prevent the bacterial attachment and biofilm growth, they effectively restricted the biogenic sulfide attack. Interestingly, single-layered graphene (SLG) worsened the biogenic sulfide attack by 5-fold compared to bare Cu. In contrast, multilayered graphene (MLG) on Cu restricted the attack by 10-fold and 1.4-fold compared to SLG-Cu and bare Cu, respectively. We combined experimental and computational studies to discern the anomalous behavior of SLG-Cu compared to MLG-Cu. We also report that MLG on Ni offers superior protection ability compared to SLG. Finally, we demonstrate the effect of defects, including double vacancy defects and grain boundaries on the protection ability of atomic graphene layers.

A Review on Graphene-Based Light Emitting Functional Devices

In recent years, the field of nanophotonics has progressively developed. However, constant demand for the development of new light source still exists at the nanometric scale. Light emissions from graphene-based active materials can provide a leading platform for the development of two dimensional (2-D), flexible, thin, and robust light-emitting sources. The exceptional structure of Dirac's electrons in graphene, massless fermions, and the linear dispersion relationship with ultra-wideband plasmon and tunable surface polarities allows numerous applications in optoelectronics and plasmonics. In this article, we present a comprehensive review of recent developments in graphene-based light-emitting devices. Light emissions from graphene-based devices have been evaluated with different aspects, such as thermal emission, electroluminescence, and plasmons assisted emission. Theoretical investigations, along with experimental demonstration in the development of graphene-based light-emitting devices, have also been reviewed and discussed. Moreover, the graphene-based light-emitting devices are also addressed from the perspective of future applications, such as optical modulators, optical interconnects, and optical sensing. Finally, this review provides a comprehensive discussion on current technological issues and challenges related to the potential applications of emerging graphene-based light-emitting devices.

Chemical Vapour Deposition of Graphene-Synthesis, Characterisation, and Applications: A Review

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

Programmed Ultrafast Scan Welding of Cu Nanowire Networks with a Pulsed Ultraviolet Laser Beam for Transparent Conductive Electrodes and Flexible Circuits

Metal nanowires (NWs) have shown superior advances for the next-generation transparent conducting (TC) materials. Most concerns were focused on uniform conductive films; however, fabrication of a programmed circuit is still lacking. Here, we demonstrate a programmable ultrafast welding method by pulsed laser beam scanning under ambient conditions to achieve a Cu NW pattern-free TC circuit as well as various size films. High-aspect ratio Cu NWs (> 3000) are synthesized through an oleylamine-mediated solution system. Pulsed ultraviolet laser irradiation together with a programmed moving station is set up for the welding of Cu NW networks. Finite element simulations reveal that the transient heating by efficient absorption of UV light (∼ 250 nm) could remove the organic residues on the surface and realize local welding of interlaced NW junctions. With only 10 ms pulsed irradiation, high optoelectronic performance (33 ohm/sq. at 87% transmittance at 550 nm) and excellent stability of the Cu NW TC film have been achieved. The line-by-line and selected route scanning modes could rapidly make large area TC films and directly write flexible circuits. Moreover, completely transparent micron-size UV and blue LED chips are fabricated and successfully lit with bright emission. This method opens up a future way of circuit and device fabrication by direct one-step laser writing.

Graphene Aerogels for In Situ Synthesis of Conductive Poly(para-phenylenediamine) Polymers, and Their Sensor Application

In this study, macroporous graphene aerogels (GAs) were synthesized by chemical reduction of graphene oxide sheets and were used as a support material for in situ synthesis of conductive poly(para-phenylenediamine) (p(p-PDA)). The in situ synthesis of p(p-PDA) in GA was carried out by using a simple oxidation polymerization technique. Moreover, the prepared conductive p(p-PDA) polymers in the networks of GAs were doped with various types of acids such as hydrochloric acid (HCl), nitric acid (HNO3), sulfuric acid (H2SO4), phosphoric acid (H3PO4), respectively. The prepared GA and different acid-doped forms as GA/p(p-PDA) composites were characterized by FT-IR, TGA, and conductivity measurements. The observed FT-IR peaks at 1574 cm-1, and 1491 cm-1, for stretching deformations of quinone and benzene, respectively, confirmed the in situ synthesis of P(p-PDA) polymers within GAs. The conductivity of GAs with 2.17 × 10-4 ± 3.15 × 10-5 S·cm-1 has experienced an approximately 250-fold increase to 5.16 × 10-2 ± 2.72 × 10-3 S·cm-1 after in situ synthesis of p(p-PDA) polymers and with HCl doping. Conductivity values for different types of acid-doped GA/p(p-PDA) composites were compared with the bare p(p-PDA) and their undoped forms. Moreover, the changes in the conductivity of GA and GA/p(p-PDA) composites upon CO2 gas exposure were compared and their sensory potential in terms of response and sensitivity, along with reusability in CO2 detection, were evaluated.

Cu Nanowires Passivated with Hexagonal Boron Nitride: An Ultrastable, Selectively Transparent Conductor

The copper nanowire (Cu NW) network is considered a promising alternative to indium tin oxide as transparent conductors for advanced optoelectronic devices. However, the fast degradation of copper in ambient conditions largely overshadows its practical applications. Here we demonstrate a facile method for epitaxial growth of hexagonal boron nitride (h-BN) of a few atomic layers on interlaced Cu NWs by low-pressure chemical vapor deposition, which exhibit excellent thermal and chemical stability under high temperature (900 °C in vacuum), high humidity (95% RH), and strong base/oxidizer solution (NaOH/H₂O₂). Meanwhile, their optical and electrical performances remain similar to those of the original Cu NWs (e.g., high optical transmittance (∼93%) and high conductivity (60.9 Ω/□)). A smart privacy glass is successfully fabricated based on a Cu@h-BN NW network and liquid crytal, which could rapidly control the visibility from transparent to opaque (0.26 s) and, at the same time, strongly block the mid-infrared light for energy saving by screening radiative heat. This precise engineering of epitaxial Cu@h-BN core-shell nanostructure offers broad applications in high-performance electronic and optoelectronic devices.

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V.

A flexible, room-temperature and solution-processible copper nanowire based transparent electrode protected by reduced graphene oxide exhibiting high performance and improved stability

Advances in flexible electronic and optoelectronic devices have caused higher requirements for fabricating high-performance and low cost flexible transparent conductive electrodes (TCEs). Copper nanowires (Cu NWs) possess excellent electrical and optical properties, but the large contact resistance and poor stability limit their practical application in optoelectronic devices. In this work, we report a robust, convenient and environment-friendly method to assemble copper nanowires/reduced graphene oxide (Cu NWs/rGO) TCEs with enhanced conductivity, flexibility and stability at room temperature. The NaBH₄ treatment was used to remove the organics and oxides on the surface of Cu NWs, and the graphene oxide (GO) capping layer was also effectively reduced at the same time. The best Cu NWs/rGO composite TCEs show a good optical-electrical performance with a sheet resistance of ∼50 Ω/sq and transmittance of 83% as well as superior mechanical flexibility. The oxidation resistance of Cu NWs in normal environment and even at a relatively high temperature has also been greatly improved. Additionally, the Cu NWs/rGO TCEs based heaters presented high saturation temperature and rapid response time under a low voltage. The high-performance composite Cu NWs TCEs with good stability are expected to be applied in various types of flexible optoelectronic devices.

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

A low voltage (−20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 10¹⁴ /cm³) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky diodes on free-standing n+-GaN substrate. The observed CCE was 30% higher than the bulk GaN (400 µm)-based Schottky barrier diodes (SBD) at −20 V. This is the first report of α–particle detection at 5.48 MeV with a high CCE at −20 V operation. In addition, the detectors also exhibited a three-times smaller variation in CCE (0.12 %/V) with a change in bias conditions from −120 V to −20 V. The dramatic reduction in CCE variation with voltage and improved CCE was a result of the reduced charge carrier density (CCD) due to the compensation by Mg in the grown drift layer (DL), which resulted in the increased depletion width (DW) of the fabricated GaN SBDs. The SBDs also reached a CCE of approximately 96.7% at −300 V.

Recent progress of solution-processed Cu nanowires transparent electrodes and their applications

Research on next-generation transparent electrode (TE) materials to replace expensive and fragile indium tin oxide (ITO) is crucial for future electronics. Copper nanowires (Cu NWs) are considered as one of the most promising alternatives due to their excellent electrical properties and low-cost processing. This review summarizes the recent progress on the synthesis methods of long Cu NWs, and the fabrication techniques and protection measures for Cu NW TEs. Applications of Cu NW TEs in electronics, such as solar cells, touch screens, and light emitting diodes (LEDs), are discussed.

Electronic and Thermal Properties of Graphene and Recent Advances in Graphene Based Electronics Applications

Recently, graphene has been extensively researched in fundamental science and engineering fields and has been developed for various electronic applications in emerging technologies owing to its outstanding material properties, including superior electronic, thermal, optical and mechanical properties. Thus, graphene has enabled substantial progress in the development of the current electronic systems. Here, we introduce the most important electronic and thermal properties of graphene, including its high conductivity, quantum Hall effect, Dirac fermions, high Seebeck coefficient and thermoelectric effects. We also present up-to-date graphene-based applications: optical devices, electronic and thermal sensors, and energy management systems. These applications pave the way for advanced biomedical engineering, reliable human therapy, and environmental protection. In this review, we show that the development of graphene suggests substantial improvements in current electronic technologies and applications in healthcare systems.