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Sayers C, Genco A, Trovatello C, Conte SD, Khaustov VO, Cervantes-Villanueva J, Sangalli D, Molina-Sanchez A, Coletti C, Gadermaier C, Cerullo G. Strong Coupling of Coherent Phonons to Excitons in Semiconducting Monolayer MoTe 2. NANO LETTERS 2023; 23:9235-9242. [PMID: 37751559 PMCID: PMC10603802 DOI: 10.1021/acs.nanolett.3c01936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Revised: 09/19/2023] [Indexed: 09/28/2023]
Abstract
The coupling of the electron system to lattice vibrations and their time-dependent control and detection provide unique insight into the nonequilibrium physics of semiconductors. Here, we investigate the ultrafast transient response of semiconducting monolayer 2H-MoTe2 encapsulated with hBN using broadband optical pump-probe microscopy. The sub-40 fs pump pulse triggers extremely intense and long-lived coherent oscillations in the spectral region of the A' and B' exciton resonances, up to ∼20% of the maximum transient signal, due to the displacive excitation of the out-of-plane A1g phonon. Ab initio calculations reveal a dramatic rearrangement of the optical absorption of monolayer MoTe2 induced by an out-of-plane stretching and compression of the crystal lattice, consistent with an A1g -type oscillation. Our results highlight the extreme sensitivity of the optical properties of monolayer TMDs to small structural modifications and their manipulation with light.
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Affiliation(s)
| | - Armando Genco
- Dipartimento
di Fisica, Politecnico di Milano, 20133 Milano, Italy
| | - Chiara Trovatello
- Dipartimento
di Fisica, Politecnico di Milano, 20133 Milano, Italy
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | | | - Vladislav O. Khaustov
- Center
for Nanotechnology Innovation @ NEST, Istituto
Italiano di Tecnologia, 56127 Pisa, Italy
- Scuola
Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Jorge Cervantes-Villanueva
- Institute
of Materials Science (ICMUV), University
of Valencia, Catedrático Beltrán 2, E-46980 Valencia, Spain
| | - Davide Sangalli
- Division
of Ultrafast Processes in Materials (FLASHit), Istituto di Struttura della Materia-CNR (ISM-CNR), Area della Ricerca di Roma 1, 00016 Monterotondo, Scalo, Italy
| | - Alejandro Molina-Sanchez
- Institute
of Materials Science (ICMUV), University
of Valencia, Catedrático Beltrán 2, E-46980 Valencia, Spain
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @ NEST, Istituto
Italiano di Tecnologia, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, 16163 Genova, Italy
| | | | - Giulio Cerullo
- Dipartimento
di Fisica, Politecnico di Milano, 20133 Milano, Italy
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2
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Lee CH, Ryu H, Nolan G, Zhang Y, Lee Y, Oh S, Cheong H, Watanabe K, Taniguchi T, Kim K, Lee GH, Huang PY. In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe 2. NANO LETTERS 2023; 23:677-684. [PMID: 36648125 DOI: 10.1021/acs.nanolett.2c04550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Understanding the phase transition mechanisms in two-dimensional (2D) materials is a key to precisely tailor their properties at the nanoscale. Molybdenum ditelluride (MoTe2) exhibits multiple phases at room temperature, making it a promising candidate for phase-change applications. Here, we fabricate lateral 2H-Td interfaces with laser irradiation and probe their phase transitions from micro- to atomic scales with in situ heating in the transmission electron microscope (TEM). By encapsulating the MoTe2 with graphene protection layers, we create an in situ reaction cell compatible with atomic resolution imaging. We find that the Td-to-2H phase transition initiates at phase boundaries at low temperatures (200-225 °C) and propagates anisotropically along the b-axis in a layer-by-layer fashion. We also demonstrate a fully reversible 2H-Td-2H phase transition cycle, which generates a coherent 2H lattice containing inversion domain boundaries. Our results provide insights on fabricating 2D heterophase devices with atomically sharp and coherent interfaces.
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Affiliation(s)
- Chia-Hao Lee
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois61801, United States
| | - Huije Ryu
- Department of Materials Science and Engineering, Seoul National University, Seoul08826, Korea
| | - Gillian Nolan
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois61801, United States
| | - Yichao Zhang
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois61801, United States
| | - Yangjin Lee
- Department of Physics, Yonsei University, Seoul03722, Korea
| | - Siwon Oh
- Department of Physics, Sogang University, Seoul04107, Korea
| | | | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul03722, Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul08826, Korea
| | - Pinshane Y Huang
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois61801, United States
- Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois61801, United States
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3
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Schusser J, Bentmann H, Ünzelmann M, Figgemeier T, Min CH, Moser S, Neu JN, Siegrist T, Reinert F. Assessing Nontrivial Topology in Weyl Semimetals by Dichroic Photoemission. PHYSICAL REVIEW LETTERS 2022; 129:246404. [PMID: 36563241 DOI: 10.1103/physrevlett.129.246404] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2022] [Revised: 08/26/2022] [Accepted: 11/21/2022] [Indexed: 06/17/2023]
Abstract
The electronic structure of Weyl semimetals features Berry flux monopoles in the bulk and Fermi arcs at the surface. While angle-resolved photoelectron spectroscopy (ARPES) is successfully used to map the bulk and surface bands, it remains a challenge to explicitly resolve and pinpoint these topological features. Here we combine state-of-the-art photoemission theory and experiments over a wide range of excitation energies for the Weyl semimetals TaAs and TaP. Our results show that simple surface-band-counting schemes, proposed previously to identify nonzero Chern numbers, are ambiguous due to pronounced momentum-dependent spectral weight variations and the pronounced surface-bulk hybridization. Instead, our findings indicate that dichroic ARPES provides an improved approach to identify Fermi arcs but requires an accurate description of the photoelectron final state.
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Affiliation(s)
- J Schusser
- Experimentelle Physik VII and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany
| | - H Bentmann
- Experimentelle Physik VII and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany
| | - M Ünzelmann
- Experimentelle Physik VII and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany
| | - T Figgemeier
- Experimentelle Physik VII and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany
| | - C-H Min
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, Kiel, Germany
- Ruprecht Haensel Laboratory, Kiel University and DESY, Kiel, Germany
| | - S Moser
- Experimentelle Physik IV and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany
| | - J N Neu
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
- Nuclear Nonproliferation Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - T Siegrist
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
- Department of Chemical and Biomedical Engineering, FAMU-FSU College of Engineering, Tallahassee, Florida 32310, USA
| | - F Reinert
- Experimentelle Physik VII and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany
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4
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Ku CH, Liu X, Xie J, Zhang W, Lam ST, Chen Y, Zhou X, Zhao Y, Wang S, Yang S, Lai KT, Goh SK. Patterned diamond anvils prepared via laser writing for electrical transport measurements of thin quantum materials under pressure. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2022; 93:083912. [PMID: 36050123 DOI: 10.1063/5.0098226] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2022] [Accepted: 07/25/2022] [Indexed: 06/15/2023]
Abstract
Quantum materials exhibit intriguing properties with important scientific values and huge technological potential. Electrical transport measurements under hydrostatic pressure have been influential in unraveling the underlying physics of many quantum materials in bulk form. However, such measurements have not been applied widely to samples in the form of thin flakes, in which new phenomena can emerge, due to the difficulty in attaching fine wires to a thin sample suitable for high-pressure devices. Here, we utilize a home-built direct laser writing system to functionalize a diamond anvil to directly integrate the capability of conducting electrical transport measurements of thin flakes with a pressure cell. With our methodology, the culet of a diamond anvil is equipped with a set of custom-designed conducting tracks. We demonstrate the superiority of these tracks as electrodes for the studies of thin flakes by presenting the measurement of pressure-enhanced superconductivity and quantum oscillations in a flake of MoTe2.
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Affiliation(s)
- Che-Hsuan Ku
- Department of Physics, The Chinese University of Hong Kong, Shatin N.T., Hong Kong, China
| | - Xinyou Liu
- Department of Physics, The Chinese University of Hong Kong, Shatin N.T., Hong Kong, China
| | - Jianyu Xie
- Department of Physics, The Chinese University of Hong Kong, Shatin N.T., Hong Kong, China
| | - W Zhang
- Department of Physics, The Chinese University of Hong Kong, Shatin N.T., Hong Kong, China
| | - Siu Tung Lam
- Department of Physics, The Chinese University of Hong Kong, Shatin N.T., Hong Kong, China
| | - Y Chen
- Department of Physics, The Chinese University of Hong Kong, Shatin N.T., Hong Kong, China
| | - Xuefeng Zhou
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong, China
| | - Yusheng Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong, China
| | - Shanmin Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong, China
| | - Sen Yang
- Department of Physics, The Chinese University of Hong Kong, Shatin N.T., Hong Kong, China
| | - Kwing To Lai
- Department of Physics, The Chinese University of Hong Kong, Shatin N.T., Hong Kong, China
| | - Swee K Goh
- Department of Physics, The Chinese University of Hong Kong, Shatin N.T., Hong Kong, China
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5
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Recent Progress in Two-Dimensional MoTe 2 Hetero-Phase Homojunctions. NANOMATERIALS 2021; 12:nano12010110. [PMID: 35010060 PMCID: PMC8746702 DOI: 10.3390/nano12010110] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 12/21/2021] [Accepted: 12/27/2021] [Indexed: 11/17/2022]
Abstract
With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe2 exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T' and vice versa, owing to the extremely small energy barrier between these two phases. MoTe2 thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe2 hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe2, demonstrate the approaches to the construction of 2D MoTe2 hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.
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6
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Hao X, Guo Z, Li H, Gong Y, Chen D. Anomalous enhancement of atomic vibration induced by electronic transition in 2H-MoTe 2under compression. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:025402. [PMID: 34584018 DOI: 10.1088/1361-648x/ac2ad1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Accepted: 09/28/2021] [Indexed: 06/13/2023]
Abstract
In this work, we explore the atomic vibration and local structure in 2H-MoTe2by using high-pressure x-ray absorption fine structure spectroscopy up to ∼20 GPa. The discrepancy between the Mo-Te and Mo-Mo bond length in 2H-MoTe2obtained from extended-XAFS and other techniques shows abnormal increase at 7.3 and 14.8 GPa, which is mainly due to the abrupt enhancement of vibration perpendicular to the bond direction.Ab initiocalculations are performed to study the electronic structure of 2H-MoTe2up to 20 GPa and confirm a semiconductor to semimetal transition around 8 GPa and a Lifshitz transition around 14 GPa. We attribute the anomalous enhancement of vibration perpendicular to the bond direction to electronic transitions. We find the electronic transition induced enhancement of local vibration for the first time. Our finding offers a novel insight into the local atomic vibration and provides a new platform for understanding the relationship between the electronic transition and atomic vibration.
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Affiliation(s)
- Xingyu Hao
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhiying Guo
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Haijing Li
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yu Gong
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Dongliang Chen
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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7
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Deng Y, Zhao X, Zhu C, Li P, Duan R, Liu G, Liu Z. MoTe 2: Semiconductor or Semimetal? ACS NANO 2021; 15:12465-12474. [PMID: 34379388 DOI: 10.1021/acsnano.1c01816] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Transition metal tellurides (TMTs) have attracted intense interest due to their intriguing physical properties arising from their diverse phase topologies. To date, a wide range of physical properties have been discovered for TMTs, including that they can act as topological insulators, semiconductors, Weyl semimetals, and superconductors. Among the TMT families, MoTe2 is a representative material because of its Janus nature and rich phases. In this Perspective, we first introduce phase structures in monolayer and bulk MoTe2 and then summarize MoTe2 synthesis strategies. We highlight recent advances of Janus MoTe2 in terms of material structures and emerging quantum states. We also provide insight into the opportunities and challenges faced by MoTe2-associated device design and applications.
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Affiliation(s)
- Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Peiling Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Guangtong Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, 637553 Singapore
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8
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Pal D, Kumar S, Shahi P, Dan S, Verma A, Gangwar VK, Singh M, Chakravarty S, Uwatoko Y, Saha S, Patil S, Chatterjee S. Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP. Sci Rep 2021; 11:9104. [PMID: 33907273 PMCID: PMC8079386 DOI: 10.1038/s41598-021-88669-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2020] [Accepted: 03/03/2021] [Indexed: 02/02/2023] Open
Abstract
The magneto-transport, magnetization and theoretical electronic-structure have been investigated on type-II Weyl semimetallic MoTeP. The ferromagnetic ordering is observed in the studied sample and it has been shown that the observed magnetic ordering is due to the defect states. It has also been demonstrated that the presence of ferromagnetic ordering in effect suppresses the magnetoresistance (MR) significantly. Interestingly, a change-over from positive to negative MR is observed at higher temperature which has been attributed to the dominance of spin scattering suppression.
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Affiliation(s)
- Debarati Pal
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India
| | - Shiv Kumar
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima City, 739-0046, Japan
| | - Prashant Shahi
- Department of Physics, D.D.U. Gorakhpur University, Gorakhpur, 273009, India
| | - Sambhab Dan
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India
| | - Abhineet Verma
- Department of Chemistry, Institute of Science (Banaras Hindu University), Varanasi, 221005, India
| | - Vinod K Gangwar
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India
| | - Mahima Singh
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India
| | - Sujoy Chakravarty
- UGC-DAE Consortium for Scientific Research, Kalpakkam Node, Kokilamedu, 603104, India
| | - Yoshiya Uwatoko
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba, 277-8581, Japan
| | - Satyen Saha
- Department of Chemistry, Institute of Science (Banaras Hindu University), Varanasi, 221005, India
| | - Swapnil Patil
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India.
| | - Sandip Chatterjee
- Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India.
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9
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Pace S, Martini L, Convertino D, Keum DH, Forti S, Pezzini S, Fabbri F, Mišeikis V, Coletti C. Synthesis of Large-Scale Monolayer 1T'-MoTe 2 and Its Stabilization via Scalable hBN Encapsulation. ACS NANO 2021; 15:4213-4225. [PMID: 33605730 PMCID: PMC8023802 DOI: 10.1021/acsnano.0c05936] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Accepted: 02/02/2021] [Indexed: 06/02/2023]
Abstract
Out of the different structural phases of molybdenum ditelluride (MoTe2), the distorted octahedral 1T' possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T'-MoTe2 is a semimetal with superconductivity, which has been predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. Large instability of monolayer 1T'-MoTe2 in environmental conditions, however, has made its investigation extremely challenging so far. In this work, we demonstrate homogeneous growth of large single-crystal (up to 500 μm) monolayer 1T'-MoTe2 via chemical vapor deposition (CVD) and its stabilization in air with a scalable encapsulation approach. The encapsulant is obtained by electrochemically delaminating CVD hexagonal boron nitride (hBN) from copper foil, and it is applied on the freshly grown 1T'-MoTe2 via a top-down dry lamination step. The structural and electrical properties of encapsulated 1T'-MoTe2 have been monitored over several months to assess the degree of degradation of the material. We find that when encapsulated with hBN, the lifetime of monolayer 1T'-MoTe2 successfully increases from a few minutes to more than a month. Furthermore, the encapsulated monolayer can be subjected to transfer, device processing, and heating and cooling cycles without degradation of its properties. The potential of this scalable heterostack is confirmed by the observation of signatures of low-temperature phase transition in monolayer 1T'-MoTe2 by both Raman spectroscopy and electrical measurements. The growth and encapsulation methods reported in this work can be employed for further fundamental studies of this enticing material as well as facilitate the technological development of monolayer 1T'-MoTe2.
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Affiliation(s)
- Simona Pace
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Leonardo Martini
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Domenica Convertino
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Dong Hoon Keum
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Stiven Forti
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Sergio Pezzini
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Filippo Fabbri
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
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10
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Singh S, Kim J, Rabe KM, Vanderbilt D. Engineering Weyl Phases and Nonlinear Hall Effects in T_{d}-MoTe_{2}. PHYSICAL REVIEW LETTERS 2020; 125:046402. [PMID: 32794815 DOI: 10.1103/physrevlett.125.046402] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 07/09/2020] [Accepted: 06/23/2020] [Indexed: 06/11/2023]
Abstract
MoTe_{2} has recently attracted much attention due to the observation of pressure-induced superconductivity, exotic topological phase transitions, and nonlinear quantum effects. However, there has been debate on the intriguing structural phase transitions among various observed phases of MoTe_{2} and their connection to the underlying topological electronic properties. In this work, by means of density-functional theory calculations, we investigate the structural phase transition between the polar T_{d} and nonpolar 1T^{'} phases of MoTe_{2} in reference to a hypothetical high-symmetry T_{0} phase that exhibits higher-order topological features. In the T_{d} phase we obtain a total of 12 Weyl points, which can be created/annihilated, dynamically manipulated, and switched by tuning a polar phonon mode. We also report the existence of a tunable nonlinear Hall effect in T_{d}-MoTe_{2} and propose the use of this effect as a probe for the detection of polarity orientation in polar (semi)metals. By studying the role of dimensionality, we identify a configuration in which a nonlinear surface response current emerges. The potential technological applications of the tunable Weyl phase and the nonlinear Hall effect are discussed.
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Affiliation(s)
- Sobhit Singh
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
| | - Jinwoong Kim
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
| | - Karin M Rabe
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
| | - David Vanderbilt
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
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11
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Sokolikova MS, Mattevi C. Direct synthesis of metastable phases of 2D transition metal dichalcogenides. Chem Soc Rev 2020; 49:3952-3980. [PMID: 32452481 DOI: 10.1039/d0cs00143k] [Citation(s) in RCA: 70] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The different polymorphic phases of transition metal dichalcogenides (TMDs) have attracted enormous interest in the last decade. The metastable metallic and small band gap phases of group VI TMDs displayed leading performance for electrocatalytic hydrogen evolution, high volumetric capacitance and some of them exhibit large gap quantum spin Hall (QSH) insulating behaviour. Metastable 1T(1T') phases require higher formation energy, as compared to the thermodynamically stable 2H phase, thus in standard chemical vapour deposition and vapour transport processes the materials normally grow in the 2H phases. Only destabilization of their 2H phase via external means, such as charge transfer or high electric field, allows the conversion of the crystal structure into the 1T(1T') phase. Bottom-up synthesis of materials in the 1T(1T') phases in measurable quantities would broaden their prospective applications and practical utilization. There is an emerging evidence that some of these 1T(1T') phases can be directly synthesized via bottom-up vapour- and liquid-phase methods. This review will provide an overview of the synthesis strategies which have been designed to achieve the crystal phase control in TMDs, and the chemical mechanisms that can drive the synthesis of metastable phases. We will provide a critical comparison between growth pathways in vapour- and liquid-phase synthesis techniques. Morphological and chemical characteristics of synthesized materials will be described along with their ability to act as electrocatalysts for the hydrogen evolution reaction from water. Phase stability and reversibility will be discussed and new potential applications will be introduced. This review aims at providing insights into the fundamental understanding of the favourable synthetic conditions for the stabilization of metastable TMD crystals and at stimulating future advancements in the field of large-scale synthesis of materials with crystal phase control.
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Perlangeli M, Peli S, Soranzio D, Puntel D, Parmigiani F, Cilento F. Polarization-resolved broadband time-resolved optical spectroscopy for complex materials: application to the case of MoTe 2 polytypes. OPTICS EXPRESS 2020; 28:8819-8829. [PMID: 32225500 DOI: 10.1364/oe.385419] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2019] [Accepted: 02/23/2020] [Indexed: 06/10/2023]
Abstract
Time-resolved optical spectroscopy (TR-OS) has emerged as a fundamental spectroscopic tool for probing complex materials, to both investigate ground-state-related properties and trigger phase transitions among different states with peculiar electronic and lattice structures. We describe a versatile approach to perform polarization-resolved TR-OS measurements, by combining broadband detection with the capability to simultaneously probe two orthogonal polarization states. This method allows us to probe, with femtoseconds resolution, the frequency-resolved reflectivity or transmittivity variations along two mutually orthogonal directions, matching the principal axis of the crystal structure of the material under scrutiny. We report on the results obtained by acquiring the polarization-dependent transient reflectivity of two polytypes of the MoTe2 compound, with 2H and 1T' crystal structures. We reveal marked anisotropies in the time-resolved reflectivity signal of 1T'-MoTe2, which are connected to the crystal structure of the compound. Polarization- and time- resolved spectroscopic measurements can thus provide information about the nature and dynamics of both the electronic and crystal lattice subsystems, advancing the comprehension of their inter-dependence, in particular in the case of photoinduced phase transitions; in addition, they provide a broadband measurement of transient polarization rotations.
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Hu YJ, Yu WC, Lai KT, Sun D, Balakirev FF, Zhang W, Xie JY, Yip KY, Aulestia EIP, Jha R, Higashinaka R, Matsuda TD, Yanase Y, Aoki Y, Goh SK. Detection of Hole Pockets in the Candidate Type-II Weyl Semimetal MoTe_{2} from Shubnikov-de Haas Quantum Oscillations. PHYSICAL REVIEW LETTERS 2020; 124:076402. [PMID: 32142308 DOI: 10.1103/physrevlett.124.076402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2019] [Revised: 11/08/2019] [Accepted: 01/24/2020] [Indexed: 06/10/2023]
Abstract
The bulk electronic structure of T_{d}-MoTe_{2} features large hole Fermi pockets at the Brillouin zone center (Γ) and two electron Fermi surfaces along the Γ-X direction. However, the large hole pockets, whose existence has important implications for the Weyl physics of T_{d}-MoTe_{2}, has never been conclusively detected in quantum oscillations. This raises doubt about the realizability of Majorana states in T_{d}-MoTe_{2}, because these exotic states rely on the existence of Weyl points, which originated from the same band structure predicted by density functional theory (DFT). Here, we report an unambiguous detection of these elusive hole pockets via Shubnikov-de Haas (SdH) quantum oscillations. At ambient pressure, the quantum oscillation frequencies for these pockets are 988 and 1513 T, when the magnetic field is applied along the c axis. The quasiparticle effective masses m^{*} associated with these frequencies are 1.50 and 2.77 m_{e}, respectively, indicating the importance of Coulomb interactions in this system. We further measure the SdH oscillations under pressure. At 13 kbar, we detected a peak at 1798 T with m^{*}=2.86m_{e}. Relative to the oscillation data at a lower pressure, the amplitude of this peak experienced an enhancement, which can be attributed to the reduced curvature of the hole pockets under pressure. Combining our experimental data with DFT+U calculations, where U is the Hubbard parameter, our results shed light on why these important hole pockets have not been detected until now.
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Affiliation(s)
- Y J Hu
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
| | - W C Yu
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong
| | - Kwing To Lai
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
| | - D Sun
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - F F Balakirev
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - W Zhang
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
| | - J Y Xie
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
| | - K Y Yip
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
| | | | - Rajveer Jha
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Ryuji Higashinaka
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Tatsuma D Matsuda
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Y Yanase
- Department of Physics, Kyoto University, Kyoto 606-8502, Japan
| | - Yuji Aoki
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - Swee K Goh
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
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