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Wang Q, Li M, Guo P, Gao L, Weng L, Huang W. Magnetostrictive bi-perceptive flexible sensor for tracking bend and position of human and robot hand. Sci Rep 2024; 14:20781. [PMID: 39242674 PMCID: PMC11379869 DOI: 10.1038/s41598-024-70661-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Accepted: 08/20/2024] [Indexed: 09/09/2024] Open
Abstract
The sensor that simultaneously perceives bending strain and magnetic field has the potential to detect the finger bending state and hand position of the human and robot. Based on unique magneto-mechanical coupling effect of magnetostrictive materials, the proposed a bi-perceptive flexible sensor, consisting of the Co-Fe film and magnetic sensing plane coils, can realize dual information perception of strain/magnetic field through the change of magnetization state. The sensor structure and interface circuit of the sensing system are designed to provide high sensitivity and fast response, based on the input-output characteristics of the simulation model. An asynchronous multi-task deep learning method is proposed, which takes the output of the position task as the partial input of the bending state task to analyze the output information of the sensor quickly and accurately. The sensing system, integrating with the proposed model, can better predict the bending state and approach distance of human or robot hand.
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Affiliation(s)
- Qian Wang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin, 300130, China
- The Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, School of Electrical Engineering, Hebei University of Technology, Tianjin, 300130, China
| | - Mingming Li
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin, 300130, China.
- The Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, School of Electrical Engineering, Hebei University of Technology, Tianjin, 300130, China.
| | - Pingping Guo
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin, 300130, China
- The Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, School of Electrical Engineering, Hebei University of Technology, Tianjin, 300130, China
| | - Liang Gao
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin, 300130, China
- The Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, School of Electrical Engineering, Hebei University of Technology, Tianjin, 300130, China
| | - Ling Weng
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin, 300130, China
- The Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, School of Electrical Engineering, Hebei University of Technology, Tianjin, 300130, China
| | - Wenmei Huang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin, 300130, China
- The Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province, School of Electrical Engineering, Hebei University of Technology, Tianjin, 300130, China
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Kim N, Seo D, Kim B, Kim Y, Yoon S, Kim JH. Adjusting microwave sensing frequency through aspect ratio variation and bending repetitions in Permalloy ellipses. Sci Rep 2024; 14:17070. [PMID: 39048623 PMCID: PMC11269611 DOI: 10.1038/s41598-024-66802-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2024] [Accepted: 07/04/2024] [Indexed: 07/27/2024] Open
Abstract
The Ferromagnetic Resonance (FMR) phenomenon, marked by the selective absorption of microwave radiation by magnetic materials in the presence of a magnetic field, plays a pivotal role in the development of radar absorbing materials, high speed magnetic storage, and magnetic sensors. This process is integral for technologies requiring precise control over microwave absorption frequencies. We explored how variations in resonance fields can be effectively modulated by adjusting both the shape and stress anisotropies of magnetic materials on a flexible substrate. Utilizing polyethylene-naphthalate (PEN) as the substrate and Permalloy (Ni79Fe21, noted for its positive magnetostriction coefficient) as the magnetic component, we demonstrated that modifications in the aspect ratio and bending repetitions can significantly alter the resonance field. The results, consistent with Kittel's equation and the predictions of a uniaxial magnetic anisotropy model, underscore the potential for flexible substrates in enhancing the sensitivity and versatility of RF-based magnetic devices.
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Affiliation(s)
- Nayeon Kim
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
- Energy & Nano Technology R&D Group, Korea Institute of Industrial Technology, Gwangju, 61012, Republic of Korea
| | - Dongpyo Seo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - ByungRo Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
- Energy & Nano Technology R&D Group, Korea Institute of Industrial Technology, Gwangju, 61012, Republic of Korea
| | - Youjung Kim
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
- Energy & Nano Technology R&D Group, Korea Institute of Industrial Technology, Gwangju, 61012, Republic of Korea
| | - Seungha Yoon
- Energy & Nano Technology R&D Group, Korea Institute of Industrial Technology, Gwangju, 61012, Republic of Korea.
| | - Jin Hyeok Kim
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea.
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Liu M, Wang Z, Meng Z, Sun X, Huang Y, Guo Y, Yang Z. Giant Magnetoimpedance Effect of Multilayered Thin Film Meanders Formed on Flexible Substrates. MICROMACHINES 2023; 14:mi14051002. [PMID: 37241625 DOI: 10.3390/mi14051002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 04/27/2023] [Accepted: 04/27/2023] [Indexed: 05/28/2023]
Abstract
The giant magnetoimpedance effect of multilayered thin films under stress has great application prospects in magnetic sensing, but related studies are rarely reported. Therefore, the giant magnetoimpedance effects in multilayered thin film meanders under different stresses were thoroughly investigated. Firstly, multilayered FeNi/Cu/FeNi thin film meanders with the same thickness were manufactured on polyimide (PI) and polyester (PET) substrates by DC magnetron sputtering and MEMS technology. The characterization of meanders was analyzed by SEM, AFM, XRD, and VSM. The results show that multilayered thin film meanders on flexible substrates also have the advantages of good density, high crystallinity, and excellent soft magnetic properties. Then, we observed the giant magnetoimpedance effect under tensile and compressive stresses. The results show that the application of longitudinal compressive stress increases the transverse anisotropy and enhances the GMI effect of multilayered thin film meanders, while the application of longitudinal tensile stress yields the opposite result. The results provide novel solutions for the fabrication of more stable and flexible giant magnetoimpedance sensors, as well as for the development of stress sensors.
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Affiliation(s)
- Mengyu Liu
- School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China
- Key Laboratory of Integrated Circuits and Microsystems, Education Department of Guangxi Zhuang Autonomous Region, Guangxi Normal University, Guilin 541004, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, School of Electronic and Information Engineering, Guangxi Normal University, Guilin 541004, China
| | - Zhenbao Wang
- School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China
- Key Laboratory of Integrated Circuits and Microsystems, Education Department of Guangxi Zhuang Autonomous Region, Guangxi Normal University, Guilin 541004, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, School of Electronic and Information Engineering, Guangxi Normal University, Guilin 541004, China
| | - Ziqin Meng
- School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China
- Key Laboratory of Integrated Circuits and Microsystems, Education Department of Guangxi Zhuang Autonomous Region, Guangxi Normal University, Guilin 541004, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, School of Electronic and Information Engineering, Guangxi Normal University, Guilin 541004, China
| | - Xuecheng Sun
- Microelectronic Research & Development Center, School of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200444, China
| | - Yong Huang
- Xidian-Wuhu Research Institute, Wuhu 241000, China
| | - Yongbin Guo
- Key Laboratory of UWB & THz of Shandong Academy of Sciences, Institute of Automation, Qilu University of Technology, Jinan 250014, China
| | - Zhen Yang
- School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China
- Key Laboratory of Integrated Circuits and Microsystems, Education Department of Guangxi Zhuang Autonomous Region, Guangxi Normal University, Guilin 541004, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, School of Electronic and Information Engineering, Guangxi Normal University, Guilin 541004, China
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Pan L, Xie Y, Yang H, Li M, Bao X, Shang J, Li RW. Flexible Magnetic Sensors. SENSORS (BASEL, SWITZERLAND) 2023; 23:4083. [PMID: 37112422 PMCID: PMC10141728 DOI: 10.3390/s23084083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 04/03/2023] [Accepted: 04/13/2023] [Indexed: 06/19/2023]
Abstract
With the merits of high sensitivity, high stability, high flexibility, low cost, and simple manufacturing, flexible magnetic field sensors have potential applications in various fields such as geomagnetosensitive E-Skins, magnetoelectric compass, and non-contact interactive platforms. Based on the principles of various magnetic field sensors, this paper introduces the research progress of flexible magnetic field sensors, including the preparation, performance, related applications, etc. In addition, the prospects of flexible magnetic field sensors and their challenges are presented.
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Affiliation(s)
- Lili Pan
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Yali Xie
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Huali Yang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Mengchao Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xilai Bao
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jie Shang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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Silva M, Franco F, Leitao DC, Cardoso S, Freitas PP. Two-dimensional arrays of vertically packed spin-valves with picoTesla sensitivity at room temperature. Sci Rep 2021; 11:215. [PMID: 33420189 PMCID: PMC7794481 DOI: 10.1038/s41598-020-79856-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2020] [Accepted: 12/08/2020] [Indexed: 11/09/2022] Open
Abstract
A new device architecture using giant magnetoresistive sensors demonstrates the capability to detect very low magnetic fields on the pT range. A combination of vertically packed spin-valve sensors with two-dimensional in-plane arrays, connected in series and in parallel, delivers a final detection level of 360 pT/[Formula: see text] at 10 Hz at room temperature. The device design is supported by an analytical model developed for a vertically packed spin-valve system, which takes into account all magnetic couplings present. Optimization concerning the spacer thickness and sensor physical dimensions depending on the number of pilled up spin-valves is necessary. To push the limits of detection, arrays of a large number of sensing elements (up to 440,000) are patterned with a geometry that improves sensitivity and in a configuration that reduces the resistance, leading to a lower noise level. The final device performance with pT detectivity is demonstrated in an un-shielded environment suitable for detection of bio-signals.
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Affiliation(s)
- Marilia Silva
- Instituto de Engenharia de Sistemas e Computadores - Microsistemas e Nanotecnologias (INESC-MN), 1000-029, Lisbon, Portugal. .,Instituto Superior Tecnico (IST), Universidade de Lisboa, 1040-001, Lisbon, Portugal.
| | - Fernando Franco
- Instituto de Engenharia de Sistemas e Computadores - Microsistemas e Nanotecnologias (INESC-MN), 1000-029, Lisbon, Portugal.,Instituto Superior Tecnico (IST), Universidade de Lisboa, 1040-001, Lisbon, Portugal.,Analog Devices, Limerick, V94 RT99, Ireland
| | - Diana C Leitao
- Instituto de Engenharia de Sistemas e Computadores - Microsistemas e Nanotecnologias (INESC-MN), 1000-029, Lisbon, Portugal.,Instituto Superior Tecnico (IST), Universidade de Lisboa, 1040-001, Lisbon, Portugal
| | - Susana Cardoso
- Instituto de Engenharia de Sistemas e Computadores - Microsistemas e Nanotecnologias (INESC-MN), 1000-029, Lisbon, Portugal.,Instituto Superior Tecnico (IST), Universidade de Lisboa, 1040-001, Lisbon, Portugal
| | - Paulo P Freitas
- Instituto de Engenharia de Sistemas e Computadores - Microsistemas e Nanotecnologias (INESC-MN), 1000-029, Lisbon, Portugal.,INL - International Iberian Nanotechnology Laboratory, 4715-330, Braga, Portugal
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