Enhanced excitonic emission efficiency in porous GaN

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

Aeromaterials represent a class of increasingly attractive materials for various applications. Among them, aero-ZnS has been produced by hydride vapor phase epitaxy on sacrificial ZnO templates consisting of networks of microtetrapods and has been proposed for microfluidic applications. In this paper, a cost-effective technological approach is proposed for the fabrication of aero-ZnS by using physical vapor transport with Sn2S3 crystals and networks of ZnO microtetrapods as precursors. The morphology of the produced material is investigated by scanning electron microscopy (SEM), while its crystalline and optical qualities are assessed by X-ray diffraction (XRD) analysis and photoluminescence (PL) spectroscopy, respectively. We demonstrate possibilities for controlling the composition and the crystallographic phase content of the prepared aerogels by the duration of the technological procedure. A scheme of deep energy levels and electronic transitions in the ZnS skeleton of the aeromaterial was deduced from the PL analysis, suggesting that the produced aerogel is a potential candidate for photocatalytic and sensor applications.

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy

Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron microscopy experiments. It was found that the porosity of the GaN layers could be adjusted from 0.04 to 0.9 by changing the AlN nanomask thickness and sublimation conditions. The room temperature photoluminescence properties as a function of the porosity were analysed. In particular, a strong improvement (>100) of the room temperature photoluminescence intensity was observed for porous GaN layers with a porosity in the 0.4-0.65 range. The characteristics of these porous layers were compared to those obtained with a Si_xN_ynanomask. Furthermore, the regrowth of p-type GaN on light emitting diode structures made porous by using either an AlN or a Si_xN_ynanomask were compared.

Anisotropic properties of pipe-GaN distributed Bragg reflectors

We report here a simple and robust process to convert periodic Si-doped GaN/undoped-GaN epitaxial layers into a porous-GaN/u-GaN distributed Bragg reflector (DBR) structure and demonstrate its material properties in a high-reflectance epitaxial reflector. Directional pipe-GaN layers with anisotropic optical properties were formed from n+-GaN : Si layers in a stacked structure through a lateral and doping-selective electrochemical etching process. Central wavelengths of the polarized reflectance spectra were measured to be 473 nm and 457 nm for the pipe-GaN reflector when the direction of the linear polarizer was along and perpendicular to the pipe-GaN structure. The DBR reflector with directional pipe-GaN layers has the potential for a high efficiency polarized light source and vertical cavity surface emitting laser applications.