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Damilano B, Vézian S, Brault J, Ruterana P, Gil B, Tchernycheva M. Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si xN y. Nanotechnology 2023; 34:245602. [PMID: 36913723 DOI: 10.1088/1361-6528/acc3a2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2022] [Accepted: 03/12/2023] [Indexed: 06/18/2023]
Abstract
Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron microscopy experiments. It was found that the porosity of the GaN layers could be adjusted from 0.04 to 0.9 by changing the AlN nanomask thickness and sublimation conditions. The room temperature photoluminescence properties as a function of the porosity were analysed. In particular, a strong improvement (>100) of the room temperature photoluminescence intensity was observed for porous GaN layers with a porosity in the 0.4-0.65 range. The characteristics of these porous layers were compared to those obtained with a SixNynanomask. Furthermore, the regrowth of p-type GaN on light emitting diode structures made porous by using either an AlN or a SixNynanomask were compared.
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Affiliation(s)
- B Damilano
- Université Côte d'Azur, CNRS, CRHEA, Rue B. Gregory, Valbonne, France
| | - S Vézian
- Université Côte d'Azur, CNRS, CRHEA, Rue B. Gregory, Valbonne, France
| | - J Brault
- Université Côte d'Azur, CNRS, CRHEA, Rue B. Gregory, Valbonne, France
| | - P Ruterana
- Centre de Recherche sur les Ions, les Matériaux et la Photonique, CIMAP-ENSICAEN, UMR 6252, 6 Boulevard Maréchal Juin 14050, Caen, France
| | - B Gil
- Laboratoire Charles Coulomb, UMR 5221 CNRS-Université de Montpellier, F-34095 Montpellier, France
| | - M Tchernycheva
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, Palaiseau 91120, France
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Song Q, Khadir S, Vézian S, Damilano B, Mierry PD, Chenot S, Brandli V, Genevet P. Bandwidth-unlimited polarization-maintaining metasurfaces. Sci Adv 2021; 7:7/5/eabe1112. [PMID: 33514552 PMCID: PMC7846164 DOI: 10.1126/sciadv.abe1112] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 12/11/2020] [Indexed: 05/14/2023]
Abstract
Any arbitrary state of polarization of light beam can be decomposed into a linear superposition of two orthogonal oscillations, each of which has a specific amplitude of the electric field. The dispersive nature of diffractive and refractive optical components generally affects these amplitude responses over a small wavelength range, tumbling the light polarization properties. Although recent works suggest the realization of broadband nanophotonic interfaces that can mitigate frequency dispersion, their usage for arbitrary polarization control remains elusively chromatic. Here, we present a general method to address broadband full-polarization properties of diffracted fields using an original superposition of circular polarization beams transmitted through metasurfaces. The polarization-maintaining metasurfaces are applied for complex broadband wavefront shaping, including beam deflectors and white-light holograms. Eliminating chromatic dispersion and dispersive polarization response of conventional diffractive elements lead to broadband polarization-maintaining devices of interest for applications in polarization imaging, broadband-polarimetry, augmented/virtual reality imaging, full color display, etc.
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Affiliation(s)
- Q Song
- Université Cote d'Azur, CNRS, CRHEA, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
| | - S Khadir
- Université Cote d'Azur, CNRS, CRHEA, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
| | - S Vézian
- Université Cote d'Azur, CNRS, CRHEA, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
| | - B Damilano
- Université Cote d'Azur, CNRS, CRHEA, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
| | - P D Mierry
- Université Cote d'Azur, CNRS, CRHEA, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
| | - S Chenot
- Université Cote d'Azur, CNRS, CRHEA, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
| | - V Brandli
- Université Cote d'Azur, CNRS, CRHEA, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
| | - P Genevet
- Université Cote d'Azur, CNRS, CRHEA, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France.
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Di Russo E, Mavel A, Fan Arcara V, Damilano B, Dimkou I, Vézian S, Grenier A, Veillerot M, Rochat N, Feuillet G, Bonef B, Rigutti L, Duboz JY, Monroy E, Cooper D. Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction. Nanotechnology 2020; 31:465706. [PMID: 32498042 DOI: 10.1088/1361-6528/ab996c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg-doped p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe tomography, electron holography and secondary ion mass spectrometry has been performed in order to investigate the nm-scale distribution of both Mg and Ge at the TJ. Experimental results reveal that Mg segregates at the TJ interface, and diffuses into the Ge-doped layer. As a result, the dopant concentration and distribution differ significantly from the nominal values. Despite this, electron holography reveals a TJ depletion width of ∼7 nm, in agreement with band diagram simulations using the experimentally determined dopant distribution.
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Affiliation(s)
- E Di Russo
- Univ. Grenoble Alpes, CEA, LETI, Grenoble F-38000, France
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Paillet C, Vézian S, Matei C, Michon A, Damilano B, Dussaigne A, Hyot B. InGaN islands and thin films grown on epitaxial graphene. Nanotechnology 2020; 31:405601. [PMID: 32485697 DOI: 10.1088/1361-6528/ab98bd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this work, the growth of InGaN on epitaxial graphene by molecular beam epitaxy is studied. The nucleation of the alloy follows a three-dimensional (3D) growth mode in the observed temperature range of 515 °C-765 °C, leading to the formation of dendrite-like islands. Careful Raman scattering experiments show that the graphene underneath is not degraded by the InGaN growth. Moreover, lateral displacement of the nuclei during an atomic force microscopy (AFM) scan demonstrates weak bonding interactions between the InGaN and the graphene. Finally, a longer growth time of the alloy gives rise to a compact thin film in a partial epitaxial relationship with the SiC underneath the graphene.
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Affiliation(s)
- C Paillet
- Université Grenoble Alpes, CEA-LETI, 17 Avenue des Martyrs, F-38054 Grenoble, France. Université Côte d'Azur, CNRS-CRHEA, rue Bernard Gregory, 06560 Valbonne, France
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Damilano B, Vézian S, Brault J, Alloing B, Massies J. Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication. Nano Lett 2016; 16:1863-8. [PMID: 26885770 DOI: 10.1021/acs.nanolett.5b04949] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Post-growth in situ partial SiNx masking of GaN-based epitaxial layers grown in a molecular beam epitaxy reactor is used to get GaN selective area sublimation (SAS) by high temperature annealing. Using this top-down approach, nanowires (NWs) with nanometer scale diameter are obtained from GaN and InxGa1-xN/GaN quantum well epitaxial structures. After GaN regrowth on InxGa1-xN/GaN NWs resulting from SAS, InxGa1-xN quantum disks (QDisks) with nanometer sizes in the three dimensions are formed. Low temperature microphotoluminescence experiments demonstrate QDisk multilines photon emission around 3 eV with individual line widths of 1-2 meV.
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Affiliation(s)
- B Damilano
- Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France
| | - S Vézian
- Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France
| | - J Brault
- Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France
| | - B Alloing
- Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France
| | - J Massies
- Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France
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Michon A, Largeau L, Mauguin O, Ouerghi A, Vézian S, Lefebvre D, Roudon E, Zielinski M, Chassagne T, Portail M. Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain. ACTA ACUST UNITED AC 2011. [DOI: 10.1002/pssc.201100225] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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