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Chen J, Zhang Z, Luo L, Lu Y, Song C, Cheng D, Chen X, Li W, Ren Z, Wang J, Tian H, Zhang Z, Han G. Reversible magnetism transition at ferroelectric oxide heterointerface. Sci Bull (Beijing) 2020; 65:2094-2099. [PMID: 36732962 DOI: 10.1016/j.scib.2020.09.024] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2020] [Revised: 08/11/2020] [Accepted: 09/01/2020] [Indexed: 02/04/2023]
Abstract
Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO3/PbTiO3 interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti 3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.
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Affiliation(s)
- Jialu Chen
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China
| | - Zijun Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Liang Luo
- Department of Physics and Astronomy, Iowa State University and Ames Laboratory-USDOE, Ames, IA 50011, USA
| | - Yunhao Lu
- Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (Ministry of Education), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Di Cheng
- Department of Physics and Astronomy, Iowa State University and Ames Laboratory-USDOE, Ames, IA 50011, USA
| | - Xing Chen
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Wei Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China
| | - Zhaohui Ren
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China.
| | - Jigang Wang
- Department of Physics and Astronomy, Iowa State University and Ames Laboratory-USDOE, Ames, IA 50011, USA.
| | - He Tian
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
| | - Ze Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Gaorong Han
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou 310027, China.
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A Glance at Processing-Microstructure-Property Relationships for Magnetoelectric Particulate PZT-CFO Composites. MATERIALS 2020; 13:ma13112592. [PMID: 32517198 PMCID: PMC7321595 DOI: 10.3390/ma13112592] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2020] [Revised: 05/18/2020] [Accepted: 06/03/2020] [Indexed: 11/17/2022]
Abstract
In this work, we investigated the processing-microstructure-property relationships for magnetoelectric (ME) particulate composites consisting of hard ferromagnetic CoFe2O4 (CFO) particles dispersed in a Nb-doped PbZrxTi1-xO3 (PZT) soft ferroelectric matrix. Several preparation steps, namely PZT powder calcination, PZT-CFO mixture milling and composite sintering were tailored and a range of microstructures was obtained. These included open and closed porosities up to full densification, PZT matrices with decreasing grain size across the submicron range down to the nanoscale and well dispersed CFO particles with bimodal size distributions consisting of submicron and micron sized components with varying weights. All samples could be poled under a fixed DC electric field of 4 kV/mm and the dielectric, piezoelectric and elastic coefficients were obtained and are discussed in relation to the microstructure. Remarkably, materials with nanostructured PZT matrices and open porosity showed piezoelectric charge coefficients comparable with fully dense composites with coarsened microstructure and larger voltage coefficients. Besides, the piezoelectric response of dense materials increased with the size of the CFO particles. This suggests a role of the conductive magnetic inclusions in promoting poling. Magnetoelectric coefficients were obtained and are discussed in relation to densification, piezoelectric matrix microstructure and particle size of the magnetic component. The largest magnetoelectric coefficient α33 of 1.37 mV cm-1 Oe-1 was obtained for submicron sized CFO particles, when closed porosity was reached, even if PZT grain size remained in the nanoscale.
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