Low Lattice Thermal Conductivity of a Two-Dimensional Phosphorene Oxide

Janus 2H-MXTe (M = Zr, Hf; X = S, Se) monolayers with outstanding thermoelectric properties and low lattice thermal conductivities

Two-dimensional (2D) materials have been one of the most popular objects in the research field of thermoelectric (TE) materials and have attracted substantial attention in recent years. Inspired by the synthesized 2H-MoSSe and numerous theoretical studies, we systematically investigated the electronic, thermal, and TE properties of Janus 2H-MXTe (M = Zr and Hf; X = S and Se) monolayers by using first-principles calculations. The phonon dispersion curves and AIMD simulations confirm the thermodynamic stabilities. Moreover, Janus 2H-MXTe were evaluated as indirect band-gap semiconductors with band gaps ranging from 0.56 to 0.90 eV using the HSE06 + SOC method. To evaluate the TE performance, firstly, we calculated the temperature-dependent carrier relaxation time with acoustic phonon scattering τac, impurity scattering τimp, and polarized scattering τpol. Secondly, the calculation of lattice thermal conductivity (κl) shows that these monolayers possess relatively poor κl with values of 3.4-5.4 W mK-1 at 300 K, which is caused by the low phonon lifetime and group velocity. After computing the electronic transport properties, we found that the n-type doped Janus 2H-MXTe monolayers exhibit a high Seebeck coefficient exceeding 200 μV K-1 at 300 K, resulting in a high TE power factor. Eventually, combining the electrical and thermal conductivities, the optimal dimensionless figure of merit (zT) at 300 K (900 K) can be obtained, which is 0.94 (3.63), 0.51 (2.57), 0.64 (2.72), and 0.50 (1.98) for n-type doping of ZrSeTe, HfSeTe, ZeSTe, and HfSTe monolayers. Particularly, the ZrSeTe monolayer shows the best TE performance with the maximal zT value. These results indicate the excellent application potential of Janus 2H-MXTe (M = Zr and Hf; X = S and Se) monolayers in TE materials.

Oxidation-enhanced thermoelectric efficiency in a two-dimensional phosphorene oxide

We performed density functional theory calculations to investigate the thermoelectric properties of phosphorene oxide (PO) expected to form by spontaneous oxidation of phosphorene. Since thermoelectric features by nature arise from the consequences of the electron-phonon interaction, we computed the phonon-mediated electron relaxation time, which was fed into the semiclassical Boltzmann transport equation to be solved for various thermoelectric-related quantities. It was found that PO exhibits superior thermoelectric performance compared with its pristine counterpart, which has been proposed to be a candidate for the use of future thermoelectric applications. We revealed that spontaneous oxidation of phosphorene leads to a significant enhancement in the thermoelectric properties of n-doped phosphorene oxide, which is attributed to the considerable reduction of lattice thermal conductivity albeit a small decrease in electrical conductivity. Our results suggest that controlling oxidation may be utilized to improve thermoelectric performance in nanostructures, and PO can be a promising candidate for low-dimensional thermoelectric devices.

Large-Area Oxidized Phosphorene Nanoflakes Obtained by Electrospray for Energy-Harvesting Applications

Bidimensional (2D) materials are nowadays being developed as outstanding candidates for electronic and optoelectronic components and devices. Targeted applications include sensing, energy conversion, and storage. Phosphorene is one of the most promising systems in this context, but its high reactivity under atmospheric conditions and its small-area/lab-scale deposition techniques have hampered the introduction of this material in real-world applications so far. However, phosphorene oxides in the form of low-dimensional structures (2D PO _x ) should behave as an electroresponsive material according to recent theoretical studies. In the present work, we introduce electrospraying for the deposition of stoichiometric and large-area 2D PO _x nanoflakes starting from a suspension of liquid-phase-exfoliated phosphorene. We obtained 2D PO _x nanostructures with a mean surface area two orders of magnitude larger than phosphorene structures obtained with standard mechanical and liquid exfoliation techniques. X-ray spectroscopy and high-resolution electron microscopy confirmed the P₂O₅-like crystallographic structure of the electrosprayed flakes. Finally, we experimentally demonstrated for the first time the electromechanical responsivity of the 2D P₂O₅ nanoflakes, through piezoresponse force microscopy (PFM). This work sheds light on the possible implementation of phosphorus oxide-based 2D nanomaterials in the value chain of fabrication and engineering of devices, which might be easily scaled up for energy-harvesting/conversion applications.

Evaluating the Thermoelectric Properties of BaTiS3 by Density Functional Theory

BaTiS₃ is a semiconductor with a small bandgap of ∼0.5 eV and strong transport anisotropy caused primarily by structural anisotropy; it contains well-separated octahedral columns along the [0001] direction and low lattice thermal conductivity, appealing for thermoelectric applications. Here, we evaluate the prospect of BaTiS₃ as a thermoelectric material by using the linearized electron and phonon Boltzmann transport theory based on the first-principles density functional band structure calculations. We find sizable values of the key thermoelectric parameters, such as the maximum power factor PF = 928 μW K^-2 and the maximum figure of merit ZT = 0.48 for an electron-doped sample and PF = 74 μW K^-2 and ZT = 0.17 for a hole-doped sample at room temperature, and a small doping level of ±0.25e per unit cell. The increase in temperature yields an increase in both the power factor and the figure of merit, reaching large values of PF = 3078 μW K^-2 and ZT = 0.77 for the electron-doped sample and PF = 650 μW K^-2 and ZT = 0.62 for the hole-doped sample at 800 K. Our results elucidate the promise of BaTiS₃ as a material for the thermoelectric power generator.