Effectiveness of Solvent Vapor Annealing over Thermal Annealing on the Photovoltaic Performance of Non-Fullerene Acceptor Based BHJ Solar Cells

High Sensitivity of Non-Fullerene Organic Solar Cells Morphology and Performance to a Processing Additive

Although solvent additives are used to optimize device performance in many novel non-fullerene acceptor (NFA) organic solar cells (OSCs), the effect of processing additives on OSC structures and functionalities can be difficult to predict. Here, two polymer-NFA OSCs with highly sensitive device performance and morphology to the most prevalent solvent additive chloronaphthalene (CN) are presented. Devices with 1% CN additive are found to nearly double device efficiencies to 10%. However, additive concentrations even slightly above optimum significantly hinder device performance due to formation of undesirable morphologies. A comprehensive analysis of device nanostructure shows that CN is critical to increasing crystallinity and optimizing phase separation up to the optimal concentration for suppressing charge recombination and maximizing performance. Here, domain purity and crystallinity are highly correlated with photocurrent and fill factors. However, this effect is in competition with uncontrolled crystallization of NFAs that occur at CN concentrations slightly above optimal. This study highlights how slight variations of solvent additives can impart detrimental effects to morphology and device performance of NFA OSCs. Therefore, successful scale-up processing of NFA-based OSCs will require extreme formulation control, a tuned NFA structure that resists runaway crystallization, or alternative methods such as additive-free fabrication.

Controlling solid-state structure and film morphology in non-fullerene organic photovoltaic devices

Organic solar cells (OSCs) have long promised to provide renewable energy in a scalable, cost-effective way; however, for years, their relatively low efficiency has been a significant barrier to commercialization. Recent progress on cell efficiency means that OSCs are now much more competitive with other established technologies. These key advancements have come from better understanding and controlling the molecular structure, solid-state packing, and film morphology of the light absorbing layer. This focused review will explore the different ways that the solid-state structure and film morphology of the light absorbing layer can be controlled. It will examine the key features of an efficient light absorbing layer and present guiding principles for creating efficient OSCs. The future directions and remaining research questions of this field will be briefly discussed.

Crystallization driven boost in fill factor and stability in additive-free organic solar cells

The control of morphology and microstructure during and after the active layer processing of bulk-heterojunction solar cells is critical to obtain elevated fill factors and overall good device performance. With the recent development of non-fullerene acceptors, wide attention has been paid to improve miscibility, solubility and nanoscale separation by laborious molecular design processes and by the use of additives. Nonetheless, several post-processing strategies can equally contribute to obtain an optimum phase separation and even to an enhanced crystallinity, but their effect on performance and device lifetime of polymer/non-fullerene acceptor solar cells is still unclear. Herein, we report a systematic comparison between different post-processing treatments including thermal annealing (TA), vacuum drying (VD) and solvent vapor annealing (SVA) on the TPD-3F polymer and IT-4F non-fullerene acceptor, comparing their effects on device performance as well as on the morphology and optical and electrical properties. The optimized SVA treated devices exhibited power conversion efficiencies close to 14% with a remarkable 76% fill factor and superior short-circuit currents compared to the one of untreated devices. Moreover, SVA demonstrated improvements in device stability both under illumination and under ambient conditions. The induced phase separation and the increased crystallinity of the acceptor molecules, as revealed by GIWAXS measurements, led to increased photogenerated currents, with a more effective exciton dissociation and charge collection. The open-circuit voltage losses in the SVA and TA devices were explained by a bandgap reduction and a higher trap-assisted recombination, respectively. Overall, our study points to the role of post-processing in organic solar cell fabrication, and contributes towards a new generation of efficient and stable additive-free organic solar cells.

Watching Paint Dry: Operando Solvent Vapor Annealing of Organic Solar Cells

The commercialization of organic solar cell (OSC) technology will require highly reproducible techniques for controlling the morphology of bulk heterojunction blends. Variable-pressure solvent vapor annealing (VP-SVA) is one method for postprocessing organic solar cells with high precision; it can prevent the overannealing of cells that plagues conventional SVA processes. To gain insight into the dynamics of the VP-SVA process, we carried out operando measurements on OSCs with correlated in situ grazing-incidence wide-angle X-ray scattering (GIWAXS) measurements. We show that the partial pressure of solvent vapor controls the length scale of film reordering, with optimal restructuring taking place below the saturation vapor pressure of the solvent. The experiments reveal how the film crystallinity, domain sizes, and percolation pathways evolve over the course of the VP-SVA process and how subtle differences in these morphological parameters differentiate good OSCs from champion cells.

Regioisomerically Pure 1,7-Dicyanoperylene Diimide Dimer for Charge Extraction from Donors with High Electron Affinities

Perylene diimide (PDI) has attracted widespread interest as an inexpensive electron acceptor for photovoltaic applications; however, overcrystallization in the bulk heterojunction typically leads to low device performance. Recent work has addressed this issue by forming bay-linked PDI dimers and oligomers, where the steric bulk of adjacent PDI units forces the molecule to adopt a nonplanar structure. This disrupts the molecular packing and limits domain sizes in the bulk heterojunction. Unfortunately, the introduction of electron-donating/-withdrawing groups in the bay region is also the best way to fine-tune the frontier molecular orbitals (FMOs) of PDI, which is highly desirable from a device optimization standpoint. This competition for the bay region has made it difficult for PDI to keep pace with other non-fullerene acceptors. Here, we report the synthesis of regioisomerically pure 1,7-dicyanoperylene diimide and its dimerization through an imide linkage. We show that this is an effective strategy to tune the energies of the FMOs while simultaneously suppressing overcrystallization in the bulk heterojunction. The resulting acceptor has a low LUMO energy of -4.2 eV and is capable of accepting photogenerated electrons from donor polymers with high electron affinities, even when conventional acceptors such as PDI, PC₇₁BM, and ITIC cannot.

Nanostructure- and Orientation-Controlled Resistive Memory Behaviors of Carbohydrate-block-Polystyrene with Different Molecular Weights via Solvent Annealing

We report the resistive electrical memory characteristics controlled by the self-assembled nanostructures of maltoheptaose-block-polystyrene (MH-b-PS) block copolymers, where the MH and PS blocks provide the charge-trapping and the insulating tunneling layer, respectively. A simple solvent annealing process, with various annealing conditions, were introduced for MH-b-PS thin films to achieve disordered, orientated cylinders and ordered-packed spheres morphologies. More details about the self-assembled MH-b-PS nanostructures, coupled with different volume fractions between MH and PS blocks, were investigated using atomic force microscopy and grazing-incidence small-angle X-ray scattering analyses. Moreover, various electrical memory behaviors including nonvolatile write-once-read-many-times (WORM) and Flash, and volatile dynamic-random-access-memory (DRAM) could be obtained by the same material (MH-b-PS_3k). This study establishes a detailed relationship between the nanostructure of the MH-b-PS-based block copolymers and their memory behavior of the resistive memory devices.