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Li M, Jiang Y, Ju H, He S, Jia C, Guo X. Electronic Devices Based on Heterostructures of 2D Materials and Self-Assembled Monolayers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402857. [PMID: 38934535 DOI: 10.1002/smll.202402857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Revised: 06/11/2024] [Indexed: 06/28/2024]
Abstract
2D materials (2DMs), known for their atomically ultrathin structure, exhibit remarkable electrical and optical properties. Similarly, molecular self-assembled monolayers (SAMs) with comparable atomic thickness show an abundance of designable structures and properties. The strategy of constructing electronic devices through unique heterostructures formed by van der Waals assembly between 2DMs and molecular SAMs not only enables device miniaturization, but also allows for convenient adjustment of their structures and functions. In this review, the fundamental structures and fabrication methods of three different types of electronic devices dominated by 2DM-SAM heterojunctions with varying architectures are timely elaborated. Based on these heterojunctions, their fundamental functionalities and characteristics, as well as the regulation of their performance by external stimuli, are further discussed.
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Affiliation(s)
- Mengmeng Li
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin, 300350, P. R. China
| | - Yu Jiang
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin, 300350, P. R. China
| | - Hongyu Ju
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin, 300350, P. R. China
- School of Pharmaceutical Science and Technology, Tianjin University, 92 Weijin Road, Nankai District, Tianjin, 300072, P. R. China
| | - Suhang He
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin, 300350, P. R. China
| | - Chuancheng Jia
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin, 300350, P. R. China
| | - Xuefeng Guo
- Center of Single-Molecule Sciences, Institute of Modern Optics, Frontiers Science Center for New Organic Matter, Tianjin Key Laboratory of Micro-scale Optical Information Science and Technology, College of Electronic Information and Optical Engineering, Nankai University, 38 Tongyan Road, Jinnan District, Tianjin, 300350, P. R. China
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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Wetzl C, Silvestri A, Garrido M, Hou HL, Criado A, Prato M. The Covalent Functionalization of Surface-Supported Graphene: An Update. Angew Chem Int Ed Engl 2023; 62:e202212857. [PMID: 36279191 DOI: 10.1002/anie.202212857] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Indexed: 12/12/2022]
Abstract
In the last decade, the use of graphene supported on solid surfaces has broadened its scope and applications, and graphene has acquire a promising role as a major component of high-performance electronic devices. In this context, the chemical modification of graphene has become essential. In particular, covalent modification offers key benefits, including controllability, stability, and the facility to be integrated into manufacturing operations. In this Review, we critically comment on the latest advances in the covalent modification of supported graphene on substrates. We analyze the different chemical modifications with special attention to radical reactions. In this context, we review the latest achievements in reactivity control, tailoring electronic properties, and introducing active functionalities. Finally, we extended our analysis to other emerging 2D materials supported on surfaces, such as transition metal dichalcogenides, transition metal oxides, and elemental analogs of graphene.
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Affiliation(s)
- Cecilia Wetzl
- Center for Cooperative Research in Biomaterials (CIC biomaGUNE), Basque Research and Technology Alliance (BRTA), Paseo de Miramon 194, 20014, Donostia, San Sebastián, Spain.,University of the Basque Country UPV-EHU, 20018, Donostia-San Sebastián, Spain
| | - Alessandro Silvestri
- Center for Cooperative Research in Biomaterials (CIC biomaGUNE), Basque Research and Technology Alliance (BRTA), Paseo de Miramon 194, 20014, Donostia, San Sebastián, Spain
| | - Marina Garrido
- Department of Chemical and Pharmaceutical Sciences, INSTM UdR Trieste, University of Trieste, Via L. Giorgieri 1, 34127, Trieste, Italy
| | - Hui-Lei Hou
- Center for Cooperative Research in Biomaterials (CIC biomaGUNE), Basque Research and Technology Alliance (BRTA), Paseo de Miramon 194, 20014, Donostia, San Sebastián, Spain
| | - Alejandro Criado
- Universidade da Coruña, Centro de Investigacións Científicas Avanzadas (CICA), Rúa as Carballeiras, 15071, A Coruña, Spain
| | - Maurizio Prato
- Center for Cooperative Research in Biomaterials (CIC biomaGUNE), Basque Research and Technology Alliance (BRTA), Paseo de Miramon 194, 20014, Donostia, San Sebastián, Spain.,Department of Chemical and Pharmaceutical Sciences, INSTM UdR Trieste, University of Trieste, Via L. Giorgieri 1, 34127, Trieste, Italy.,Ikerbasque, Basque Foundation for Science, 48013, Bilbao, Spain
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Park S, Mutz N, Kovalenko SA, Schultz T, Shin D, Aljarb A, Li L, Tung V, Amsalem P, List‐Kratochvil EJW, Stähler J, Xu X, Blumstengel S, Koch N. Type-I Energy Level Alignment at the PTCDA-Monolayer MoS 2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2100215. [PMID: 34194946 PMCID: PMC8224443 DOI: 10.1002/advs.202100215] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Revised: 02/24/2021] [Indexed: 06/13/2023]
Abstract
Van der Waals heterostructures consisting of 2D semiconductors and conjugated molecules are of increasing interest because of the prospect of a synergistic enhancement of (opto)electronic properties. In particular, perylenetetracarboxylic dianhydride (PTCDA) on monolayer (ML)-MoS2 has been identified as promising candidate and a staggered type-II energy level alignment and excited state interfacial charge transfer have been proposed. In contrast, it is here found with inverse and direct angle resolved photoelectron spectroscopy that PTCDA/ML-MoS2 supported by insulating sapphire exhibits a straddling type-I level alignment, with PTCDA having the wider energy gap. Photoluminescence (PL) and sub-picosecond transient absorption measurements reveal that resonance energy transfer, i.e., electron-hole pair (exciton) transfer, from PTCDA to ML-MoS2 occurs on a sub-picosecond time scale. This gives rise to an enhanced PL yield from ML-MoS2 in the heterostructure and an according overall modulation of the photoresponse. These results underpin the importance of a precise knowledge of the interfacial electronic structure in order to understand excited state dynamics and to devise reliable design strategies for optimized optoelectronic functionality in van der Waals heterostructures.
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Affiliation(s)
- Soohyung Park
- Advanced Analysis CenterKorea Institute of Science and Technology (KIST)Seoul02792South Korea
| | - Niklas Mutz
- Humboldt‐Universität zu BerlinInstitut für Physik & IRIS AdlershofBerlin12489Germany
| | | | - Thorsten Schultz
- Humboldt‐Universität zu BerlinInstitut für Physik & IRIS AdlershofBerlin12489Germany
- Helmholtz‐Zentrum für Materialien und Energie GmbHBerlin12489Germany
| | - Dongguen Shin
- Humboldt‐Universität zu BerlinInstitut für Physik & IRIS AdlershofBerlin12489Germany
| | - Areej Aljarb
- Physical Sciences and EngineeringKing Abdullah University of Science and TechnologyThuwal23955‐6900Saudi Arabia
| | - Lain‐Jong Li
- Department of Mechanical EngineeringThe University of Hong KongPokfulam RoadHong Kong
| | - Vincent Tung
- Physical Sciences and EngineeringKing Abdullah University of Science and TechnologyThuwal23955‐6900Saudi Arabia
| | - Patrick Amsalem
- Humboldt‐Universität zu BerlinInstitut für Physik & IRIS AdlershofBerlin12489Germany
| | - Emil J. W. List‐Kratochvil
- Humboldt‐Universität zu BerlinInstitut für Physik & IRIS AdlershofBerlin12489Germany
- Humboldt‐Universität zu BerlinInstitut für ChemieBerlin12489Germany
- Helmholtz‐Zentrum für Materialien und Energie GmbHBerlin12489Germany
| | - Julia Stähler
- Humboldt‐Universität zu BerlinInstitut für ChemieBerlin12489Germany
| | - Xiaomin Xu
- Shenzhen Geim Graphene CenterTsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Sylke Blumstengel
- Humboldt‐Universität zu BerlinInstitut für Physik & IRIS AdlershofBerlin12489Germany
- Humboldt‐Universität zu BerlinInstitut für ChemieBerlin12489Germany
| | - Norbert Koch
- Humboldt‐Universität zu BerlinInstitut für Physik & IRIS AdlershofBerlin12489Germany
- Helmholtz‐Zentrum für Materialien und Energie GmbHBerlin12489Germany
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