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Zhao M, Zhuang ZY, Wu F, Leng P, Joseph NB, Xie X, Ozerov M, He S, Chen Y, Narayan A, Liu Z, Xiu F. Observation of Type-II Topological Nodal-Line Fermions in ZrSiSe. ACS NANO 2024; 18:16684-16691. [PMID: 38885639 DOI: 10.1021/acsnano.4c01633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Recently, there has been significant interest in topological nodal-line semimetals due to their linear energy dispersion with one-dimensional nodal lines or loops. These materials exhibit fascinating physical properties, such as drumhead surface states and 3D anisotropic nodal-line structures. Similar to Weyl semimetals, type-II nodal-line semimetals have two crossing bands that are both electron-like or hole-like along a certain direction. However, the direct observation of type-II nodal-line Fermions has been challenging due to the lack of suitable material platforms and the low density of states. Here we present experimental evidence for the coexistence of both type-I and type-II nodal-line Fermions in ZrSiSe, which was obtained through magneto-optical and angle-resolved photoemission spectroscopy (ARPES) measurements. Our density functional theory calculations predict that the type-II nodal-line structure can be developed in the Z-R line of the first Brillouin zone based on the lattice constants of the grown single crystal. Indeed, ARPES measurements reveal the type-II nodal-line band structure. The extracted type-II Landau level transitions from magneto-optical measurements exhibit good agreement with the calculated type-II energy dispersion model based on the band structure. Our experimental results demonstrate that ZrSiSe possesses two types of nodal-line Fermions, distinguishing it from other ZrSiX (X = S, Te) materials and positioning it as an ideal platform for investigating type-II nodal-line semimetals.
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Affiliation(s)
- Minhao Zhao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute,41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
| | | | - Fan Wu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Lingang Laboratory, Shanghai 200031, China
| | - Pengliang Leng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute,41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
| | - Nesta Benno Joseph
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
| | - Xiaoyi Xie
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute,41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
| | - Mykhaylo Ozerov
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
| | - Shanmei He
- Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, U.K
| | - Yulin Chen
- Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, U.K
- School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Lingang Laboratory, Shanghai 200031, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute,41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai 200232, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
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Jeon J, Jang J, Kim H, Park T, Kim D, Moon S, Kim JS, Shim JH, Min H, Choi E. Optical Transitions of a Single Nodal Ring in SrAs_{3}: Radially and Axially Resolved Characterization. PHYSICAL REVIEW LETTERS 2023; 131:236903. [PMID: 38134786 DOI: 10.1103/physrevlett.131.236903] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 10/12/2023] [Accepted: 11/08/2023] [Indexed: 12/24/2023]
Abstract
SrAs_{3} is a unique nodal-line semimetal that contains only a single nodal ring in the Brillouin zone, uninterrupted by any trivial bands near the Fermi energy. We performed axis-resolved optical reflection measurements on SrAs_{3} and observed that the optical conductivity exhibits flat absorption up to 129 meV in both the radial and axial directions, confirming the robustness of the universal power-law behavior of the nodal ring. The axis-resolved optical conductivity, in combination with theoretical calculations, further reveals fundamental properties beyond the flat absorption, including the overlap energy of the topological bands, the spin-orbit coupling gap along the nodal ring, and the geometric properties of the nodal ring such as the average ring radius, ring ellipticity, and velocity anisotropy. In addition, our temperature-dependent measurements revealed a spectral weight transfer between intraband and interband transitions, indicating a possible violation of the optical sum rule within the measured energy range.
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Affiliation(s)
- Jiwon Jeon
- Natural Science Research Institute, University of Seoul, Seoul 02504, Korea
- Physics Department, University of Seoul, Seoul 02504, Korea
| | - Jiho Jang
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Hoil Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Taesu Park
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Dongwook Kim
- Department of Physics, Hanyang University, Seoul 04763, Korea
| | - Soonjae Moon
- Department of Physics, Hanyang University, Seoul 04763, Korea
| | - Jun Sung Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Ji Hoon Shim
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Hongki Min
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Eunjip Choi
- Physics Department, University of Seoul, Seoul 02504, Korea
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Gao W, Zhu M, Chen D, Liang X, Wu Y, Zhu A, Han Y, Li L, Liu X, Zheng G, Lu W, Tian M. Evidences of Topological Surface States in the Nodal-Line Semimetal SnTaS 2 Nanoflakes. ACS NANO 2023; 17:4913-4921. [PMID: 36802534 DOI: 10.1021/acsnano.2c11932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Exploring the topological surface state of a topological semimetal by the transport technique has always been a big challenge because of the overwhelming contribution of the bulk state. In this work, we perform systematic angular-dependent magnetotransport measurements and electronic band calculations on SnTaS2 crystals, a layered topological nodal-line semimetal. Distinct Shubnikov-de Haas quantum oscillations were observed only in SnTaS2 nanoflakes when the thickness was below about 110 nm, and the oscillation amplitudes increased significantly with decreasing thickness. By analysis of the oscillation spectra, together with the theoretical calculation, a two-dimensional and topological nontrivial nature of the surface band is unambiguously identified, providing direct transport evidence of drumhead surface state for SnTaS2. Our comprehensive understanding of the Fermi surface topology of the centrosymmetric superconductor SnTaS2 is crucial for further research on the interplay of superconductivity and nontrivial topology.
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Affiliation(s)
- Wenshuai Gao
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Mengcheng Zhu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Dong Chen
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Xin Liang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Yuelong Wu
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Ankang Zhu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Yuyan Han
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Liang Li
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Xue Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Guolin Zheng
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Wenjian Lu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Mingliang Tian
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
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Yan Q, Li Z, Zhou P, Sun L. Nontrivial topological states in new two-dimensional CdAs. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:365701. [PMID: 34144543 DOI: 10.1088/1361-648x/ac0cb5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Accepted: 06/18/2021] [Indexed: 06/12/2023]
Abstract
By using first-principles calculations and symmetry analysis, we propose two topological nontrivial two-dimensional (2D) materials: CdAs-164 and CdAs-187. The results of binding energies, phonon dispersions, mechanical constants and thermodynamic stability demonstrate that the two materials are stable and may be synthesized in future experiments. When spin-orbit coupling (SOC) is not considered, the former is a typical Dirac semimetal with six equivalent Dirac points on the paths of Γ-M. These Dirac points are protected by vertical mirror symmetry. The latter is a nodal ring semimetal with the coexistence of two type-I nodal rings and one type-II nodal ring, and these nodal rings are protected by the horizontal mirror operationσh. After SOC is considered, both of the two materials turn into topological insulators withZ2= 1. Our findings indicate that CdAs-164 and CdAs-187 are excellent candidates to explore the nontrivial topological states of 2D materials.
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Affiliation(s)
- Quihui Yan
- Hunan Provincial Key laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Zehou Li
- Hunan Provincial Key laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Pan Zhou
- Hunan Provincial Key laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Lizhong Sun
- Hunan Provincial Key laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China
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Guo Z, Hao X, Dong J, Li H, Gong Y, Yang D, Liao J, Chu S, Li Y, Li X, Chen D. Prediction of topological nontrivial semimetals and pressure-induced Lifshitz transition in 1T'-MoS 2 layered bulk polytypes. NANOSCALE 2020; 12:22710-22717. [PMID: 33169783 DOI: 10.1039/d0nr05208f] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, bulk MoS2 crystals stacked by 1T'-MoS2 monolayers have been synthesized successfully, but little is known about their stacking sequences and topological properties. Based on first-principles calculations and symmetry-based indicator theory, we discovered that three predicted bulk structures of MoS2 (named 2M-, 1T'- and β-MoS2) stacked by 1T' monolayers are topological insulators and nodal line semimetals with and without spin-orbit coupling. Their stacking stability, electronic structure and the topology origin were systematically investigated. Further research proves that in the absence of SOC the open- and closed-type nodal lines can coexist in the momentum space of 2M-MoS2, which also possesses drumhead-like surface state. Moreover, we predicted a pressure-induced Lifshitz transition at about 1.3 GPa in 2M-MoS2. Our findings greatly enrich the topological phases of MoS2 and probably bring MoS2 to the rapidly growing family of layered topological semimetals.
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Affiliation(s)
- Zhiying Guo
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China.
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