Impact of Spin-Orbit Torque on Spin-Transfer Torque Switching in Magnetic Tunnel Junctions

Tunneling current-controlled spin states in few-layer van der Waals magnets

Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices

We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM). SOTs are included by considering spin currents generated through the spin Hall effect. We scale the magnetization parameters with the temperature. Numerical experiments show several time scales for temperature dynamics. The relatively slow temperature increase, after a rapid initial temperature rise, introduces an incubation time to the switching. Such a behavior cannot be reproduced with a constant temperature model. Furthermore, the critical SOT switching voltage is significantly reduced by the increased temperature. We demonstrate this phenomenon for switching of field-free SOT-MRAM. In addition, with an external-field-assisted switching, the critical SOT voltage shows a parabolic decrease with respect to the voltage applied across the magnetic tunnel junction (MTJ) of the SOT-MRAM cell, in agreement with recent experimental data.

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

We present a theoretical investigation of the magnetisation reversal process in CoFeB-based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of magnetisation dynamics induced by combination of spin orbit torque (SOT) and spin transfer torque (STT). Within the model the effect of SOT is introduced as a Slonczewski formalism, whereas the effect of STT is included via a spin accumulation model. We investigate a system of CoFeB/MgO/CoFeB coupled with a heavy metal layer where the charge current is injected into the plane of the heavy metal meanwhile the other charge current flows perpendicular into the MTJ structure. Our results reveal that SOT can assist the precessional switching induced by spin polarised current within a certain range of injected current densities yielding an efficient and fast reversal on the sub-nanosecond timescale. The combination of STT and SOT gives a promising pathway to improve high performance CoFeB-based devices with high speed and low power consumption.

Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques

Recently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm. Furthermore, spin-transfer torque (STT) and spin-orbit torque (SOT) hybrid switching, which guarantees fast magnetization switching and deterministic switching, has recently been achieved in experiments. In this study, the critical switching current density of the MTJ with S-PMA through the interplay of STT and SOT was investigated using theoretical and numerical methods. As the current density inducing SOT ([Formula: see text]) increases, the critical switching current density inducing STT ([Formula: see text]) decreases. Furthermore, for a given [Formula: see text], [Formula: see text] increases with increasing thickness, whereas [Formula: see text] decreases as the diameter increases. Moreover, [Formula: see text] in the plane of thickness and spin-orbit field-like torque ([Formula: see text]) was investigated for a fixed [Formula: see text] and diameter. Although [Formula: see text] decreases with increasing [Formula: see text], [Formula: see text] slowly increases with increasing thickness and increasing [Formula: see text]. The power consumption was investigated as a function of thickness and diameter at the critical switching current density. Experimental confirmation of these results using existing experimental techniques is anticipated.

Study on a new manner of the magnetization switching actuated by a unidirectional pulse current

A new writing scheme with a unidirectional pulse current is proposed for spin transfer torque (STT) based magnetic random-access memory (MRAM). To investigate the feasibility of the writing scheme, bilayered nano-pillars composed of a soft layer with small in-plane shape anisotropy and a hard layer with either large perpendicular anisotropy (PMA) or in-plane anisotropy (IMA) are designed and their switching behaviors are studied. It is found that in either type of bilayered nano-pillars, with the aid of the attached hard layer, the magnetization of the soft layer can be switched back and forth under a unidirectional pulse current. In an IMA/IMA nano-pillar, the magnetization of the free layer (FL) can achieve excellent alignment, which is in contrast to the IMA/PMA nano-pillar. By optimizing the dimensions and magnetic parameters of the IMA/IMA nano-pillar, a decently low switching current density (4.3 × 10¹¹A m^-2) and ultrashort switching time (<1 ns) can be reached. Based on these results, the unidirectional writing scheme is practical if an IMA/IMA bilayer is used to replace the FL in a magnetic tunnel junction. Considering that a unidirectional writing scheme can enable the application of materials with high spin polarization such as half metals, and avoid the injection of writing current into junction using a special design, it may be very promising for STT-MRAM.

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Recent progress in the development of artificial intelligence technologies, aided by deep learning algorithms, has led to an unprecedented revolution in neuromorphic circuits, bringing us ever closer to brain-like computers. However, the vast majority of advanced algorithms still have to run on conventional computers. Thus, their capacities are limited by what is known as the von-Neumann bottleneck, where the central processing unit for data computation and the main memory for data storage are separated. Emerging forms of non-volatile random access memory, such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory, and resistive random access memory, are widely considered to offer the best prospect of circumventing the von-Neumann bottleneck. This is due to their ability to merge storage and computational operations, such as Boolean logic. This paper reviews the most common kinds of non-volatile random access memory and their physical principles, together with their relative pros and cons when compared with conventional CMOS-based circuits (Complementary Metal Oxide Semiconductor). Their potential application to Boolean logic computation is then considered in terms of their working mechanism, circuit design and performance metrics. The paper concludes by envisaging the prospects offered by non-volatile devices for future brain-inspired and neuromorphic computation.