Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors

Advancements in the Synthesis and Functionalization of Zinc Oxide-Based Nanomaterials for Enhanced Oral Cancer Therapy

The fabrication of zinc oxide-based nanomaterials (including natural and synthetic polymers like sulfated polysaccharide, chitosan, and polymethyl methacrylate) has potential to improve oral cancer treatment strategies. This comprehensive review explores the diverse synthesis methods employed to fabricate zinc oxide nanomaterials tailored for oral cancer applications. Several synthesis processes, particularly sol-gel, hydrothermal, and chemical vapor deposition approaches, are thoroughly studied, highlighting their advantages and limitations. The review also examines how synthesis parameters, such as precursor selection, the reaction temperature, and growth conditions, influence both the physicochemical attributes and biological efficacy of the resulting nanomaterials. Furthermore, recent advancements in surface functionalization and modification strategies targeted at improving the targeting specificity and pharmaceutical effectiveness of zinc oxide-based nanomaterials in oral cancer therapy are elucidated. Additionally, the review provides insights into the existing issues and prospective views in the field, emphasizing the need for further research to optimize synthesis methodologies and elucidate the mechanisms underlying the efficacy of zinc oxide-based nanoparticles in oral cancer therapy.

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Zinc oxide (ZnO)-based thin-film transistors (TFTs) have attracted increasing attention towards flat-panel displays as alternatives to silicon-based TFTs due to their transparency to visible light. Magnesium oxide (MgO) has a wide bandgap (7.8 eV) and high dielectric constant (k). This leads to the development of TFTs using MgO as a gate oxide layer, which can significantly reduce the operating voltage. However, the electrical properties and dielectric constant of MgO are determined from the percentage of oxygen in MgO. In this study, a MgO gate-oxide was deposited on ZnO by magnetron sputtering at various oxygen concentrations (0%, 66%, and 100%) to fabricate TFTs. With an increase in the oxygen concentration, the oxygen vacancies of MgO were compensated, thereby improving the crystallinity and enhancing the dielectric constant from 6.53 to 12.9 for the oxygen concentrations of 0% and 100%. No pinch-off (saturation) behavior was observed in the TFTs with 0% oxygen; however, the pinch-off voltages were significantly reduced to 17 and 2 V in the TFTs with 66% and 100% oxygen, respectively; hence, the TFT-100 could be operated at a low operating voltage (2 V). With an increase in oxygen from 0% to 100%, the threshold voltage and trap-state density significantly decreased from -159 V and 1.6 × 1018cm-3to -31.4 V and 6.5 × 1016cm-3, respectively. The TFTs with 0% oxygen exhibited a higher field-effect mobility of 12 cm2V-1s-1due to the uncompensated oxygen vacancy in ZnO, which had a higher electron concentration. After introducing oxygen atoms, the field-effect mobility decreased to 0.16 cm2V-1s-1in the TFTs with 66% oxygen, which can be attributed to the compensated oxygen vacancy and lower electron concentration. In contrast, the field-effect mobility increased to 1.88 cm2V-1s-1for the TFTs with 100% oxygen due to the enhanced dielectric constant and crystallinity of MgO.

As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability

The development of low-cost, high-mobility oxide thin-film transistors (TFTs) with excellent stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large-area, and high-resolution displays. Here, we report highly oriented, as-grown crystalline InGaZnO (c-IGZO) with very low oxygen vacancy defects using spray pyrolysis at the substrate temperature of 425 °C. The c-IGZO exhibits a highly oriented, c-axis aligned crystal perpendicular to the substrate with a high mass density of 6.73 g cm-3 without any disordered incubation layer. Its resistivity can be decreased to 0.42 mΩ cm by NF3 plasma doping, which is essential to achieving high-performance coplanar TFT. We have demonstrated the application of this material to high-performance flexible TFTs. The self-aligned, coplanar c-IGZO TFTs on the polyimide substrate exhibit an average field-effect mobility of 39.60 cm2 V-1 s-1, threshold voltage of -1.00 V, subthreshold swing of 0.21 V dec-1, and on/off current ratio over 108. The ring oscillator and gate driver made of the c-IGZO TFTs exhibit a propagation delay of 8.77 ns/stage and rising/falling times of 648/564 ns, respectively. Therefore, the as-grown c-IGZO by spray pyrolysis has the potential to be utilized as a new oxide semiconductor for the production of low-cost, flexible TFT electronics.

Various Applications of ZnO Thin Films Obtained by Chemical Routes in the Last Decade

This review addresses the importance of Zn for obtaining multifunctional materials with interesting properties by following certain preparation strategies: choosing the appropriate synthesis route, doping and co-doping of ZnO films to achieve conductive oxide materials with p- or n-type conductivity, and finally adding polymers in the oxide systems for piezoelectricity enhancement. We mainly followed the results of studies of the last ten years through chemical routes, especially by sol-gel and hydrothermal synthesis. Zinc is an essential element that has a special importance for developing multifunctional materials with various applications. ZnO can be used for the deposition of thin films or for obtaining mixed layers by combining ZnO with other oxides (ZnO-SnO₂, ZnO-CuO). Also, composite films can be achieved by mixing ZnO with polymers. It can be doped with metals (Li, Na, Mg, Al) or non-metals (B, N, P). Zn is easily incorporated in a matrix and therefore it can be used as a dopant for other oxidic materials, such as: ITO, CuO, BiFeO_3, and NiO. ZnO can be very useful as a seed layer, for good adherence of the main layer to the substrate, generating nucleation sites for nanowires growth. Thanks to its interesting properties, ZnO is a material with multiple applications in various fields: sensing technology, piezoelectric devices, transparent conductive oxides, solar cells, and photoluminescence applications. Its versatility is the main message of this review.

Highly ordered laser imprinted plasmonic metasurfaces for polarization sensitive perfect absorption

We present polarization-sensitive gap surface plasmon metasurfaces fabricated with direct material processing using pulsed laser light, an alternative and versatile approach. In particular we imprint laser induced periodic surface structures on nanometer-thick Ni films, which are back-plated by a grounded dielectric layer with TiO2 and ZnO deposition followed by Au evaporation. The procedure results in a metal-insulator-metal type plasmonic metasurface with a corrugated top layer consisting of highly-ordered, sinusoidal shaped, periodic, thin, metallic nanowires. The metasurface sustains sharp, resonant gap surface plasmons and provides various opportunities for polarization control in reflection, which is here switched by the size and infiltrating material of the insulating cavity. The polarization control is associated with the polarization sensitive perfect absorption and leads to high extinction ratios in the near-IR and mid-IR spectral areas. Corresponding Fourier-transform infrared spectroscopy measurements experimentally demonstrate that the fabrication approach produces metasurfaces with very well-defined, controllable, sharp resonances and polarization sensitive resonant absorption response which, depending on the insulating cavity size, impacts either the normal or the parallel to the nanowires polarization.

Hydrothermal Synthesis of Zinc Oxide Nanoparticles Using Different Chemical Reaction Stimulation Methods and Their Influence on Process Kinetics

The aim of this work was to study the effect of the applied chemical reaction stimulation method on the morphology and structural properties of zinc oxide nanoparticles (ZnONPs). Various methods of chemical reaction induction were applied, including microwave, high potential, conventional resistance heater and autoclave-based methods. A novel, high potential-based ZnONPs synthesis method is herein proposed. Structural properties-phase purity, grain size-were examined with XRD methods, the specific surface area was determined using BET techniques and the morphology was examined using SEM. Based on the results, the microwave and autoclave syntheses allowed us to obtain the desired phase within a short period of time. The impulse-induced method is a promising alternative since it offers a non-equilibrium course of the synthesis process in an highly energy-efficient manner.

Quick NO Gas Sensing by Ti-Doped Flower-Rod-like ZnO Structures Synthesized by the SILAR Method

In this study, Ti-doped ZnO films with flower-rod-like nanostructures were synthesized by the successive ionic layer adsorption and reaction (SILAR) method for enhanced NO gas-sensing applications. The stoichiometric ratio of Ti in the host ZnO lattice was confirmed by atomic absorption and energy-dispersive X-ray spectroscopies. All of the synthesized films exhibited a pure wurtzite hexagonal structure that seemed to deteriorate at high Ti doping contents as was manifested by the measured X-ray diffraction patterns. Scanning electron microscopy images of ZnO revealed the coexistence of porous flower- and rod-like structures, which became finer, denser, and more compact with Ti doping. By UV-vis measurements, the transmittance of the synthesized pure ZnO thin film in the visible region (∼75%) increased by about 10% with Ti doping, and the energy band gap seemed to decrease up to some limit of Ti content. Among the fabricated sensors (based on pure ZnO, 1% Ti-doped, 3% Ti-doped, and 5% Ti-doped ZnO films), the best sensing performance was observed for the 1% Ti-doped ZnO film. At first, this was associated with its high density of oxygen vacancies present on the surface of the film and ionized oxygen vacancies present in the ZnO lattice (confirmed, respectively, by X-ray photoelectron and photoluminescence spectroscopies). Nonetheless, this may also be due to its increased crystallinity (confirmed by X-ray diffraction and photoluminescence spectroscopy), high area-to-volume ratio (confirmed by scanning electron microscopy images), high specific surface area (confirmed by Brunauer-Emmett-Teller measurements) as well as high mobility and carrier concentration (confirmed by Hall measurements). The sensor was highly selective to NO gas and showed notable stability as well as very short response and recovery times, which makes it eligible for the early detection of any indoor or outdoor NO gas leakages.

Thin-Film Coating Methods: A Successful Marriage of High-Quality and Cost-Effectiveness—A Brief Exploration

In this review, several cost-effective thin-film coating methods, which include dip-coating, spin-coating, spray-coating, blade-coating, and roll-coating, are presented. Each method has its own set of advantages and disadvantages depending on the proposed application. Not all of them are appropriate for large-scale production due to their certain limitations. That is why the coating method should be selected based on the type and size of the substrate, including the thickness and surface roughness of the required thin films. The sol–gel method offers several benefits, such as simplicity in fabrication, excellent film uniformity, the capacity to cover surfaces of any size and over vast areas, and a low processing temperature. Nevertheless, these coating methods are somewhat economical and well managed in low-budget laboratories. Moreover, these methods offer thin films with good homogeneity and low-surface roughness. Furthermore, some other thin-film deposition methods, for instance, physical vapor deposition (PVD) and chemical vapor deposition (CVD), are also discussed. Since CVD is not restricted to line-of-sight deposition, a characteristic shared by sputtering, evaporation, and other PVD methods, many manufacturing methods favor it. However, these techniques require sophisticated equipment and cleanroom facilities. We aim to provide the pros and cons of thin-film coating methods and let the readers decide the suitable coating technique for their specific application.

Optical Thin Films Fabrication Techniques-Towards a Low-Cost Solution for the Integrated Photonic Platform: A Review of the Current Status

In the past few decades, several methods concerning optical thin films have been established to facilitate the development of integrated optics. This paper provides a brief depiction of different techniques for implementing optical waveguide thin films that involve chemical, physical, and refractive index modification methods. Recent advances in these fabrication methods are also been presented. Most of the methods developed for the realization of the thin-films are quite efficient, but they are expensive and require sophisticated equipment. The major interest of the scientists is to develop simple and cost-effective methods for mass production of optical thin films resulting in the effective commercialization of the waveguide technology. Our research group is focused on developing a silica-titania optical waveguide platform via the sol-gel dip-coating method and implementing active and passive optical elements via the wet etching method. We are also exploring the possibility of using nanoimprint lithography (NIL) for patterning these films so that the fabrication process is efficient and economical. The recent developments of this platform are discussed. We believe that silica-titania waveguide technology developed via the sol-gel dip-coating method is highly attractive and economical, such that it can be commercialized for applications such as sensing and optical interconnects.

Effects of Ambience on Thermal-Diffusion Type Ga-doping Process for ZnO Nanoparticles

Various annealing atmospheres were employed during our unique thermal-diffusion type Ga-doping process to investigate the surface, structural, optical, and electrical properties of Ga-doped zinc oxide (ZnO) nanoparticle (NP) layers. ZnO NPs were synthesized using an arc-discharge-mediated gas evaporation method, followed by Ga-doping under open-air, N2, O2, wet, and dry air atmospheric conditions at 800 °C to obtain the low resistive spray-coated NP layers. The I–V results revealed that the Ga-doped ZnO NP layer successfully reduced the sheet resistance in the open air (8.0 × 102 Ω/sq) and wet air atmosphere (8.8 × 102 Ω/sq) compared with un-doped ZnO (4.6 × 106 Ω/sq). Humidity plays a key role in the successful improvement of sheet resistance during Ga-doping. X-ray diffraction patterns demonstrated hexagonal wurtzite structures with increased crystallite sizes of 103 nm and 88 nm after doping in open air and wet air atmospheres, respectively. The red-shift of UV intensity indicates successful Ga-doping, and the atmospheric effects were confirmed through the analysis of the defect spectrum. Improved electrical conductivity was also confirmed using the thin-film-transistor-based structure. The current controllability by applying the gate electric-field was also confirmed, indicating the possibility of transistor channel application using the obtained ZnO NP layers.

Facile Multistep Synthesis of ZnO-Coated β-NaYF4:Yb/Tm Upconversion Nanoparticles as an Antimicrobial Photodynamic Therapy for Persistent Staphylococcus aureus Small Colony Variants

Antibacterial treatment strategies using functional nanomaterials, such as photodynamic therapy, are urgently required to combat persistent Staphylococcus aureus small colony variant (SCV) bacteria. Using a stepwise approach involving thermolysis to form β-NaYF₄:Yb/Tm upconversion nanoparticles (UCNPs) and surface ligand exchange with cetyltrimethylammonium bromide (CTAB), followed by zeolite imidazolate framework-8 (ZIF-8) coating and conversion to zinc oxide (ZnO), β-NaYF₄:Yb/Tm@ZnO nanoparticles were synthesized. The direct synthesis of β-NaYF₄:Yb/Tm@ZIF-8 UCNPs proved problematic due to the hydrophobic nature of the as-synthesized material, which was shown by zeta potential measurements using dynamic light scattering (DLS). To facilitate deposition of a ZnO coating, the zeta potentials of (i) as-synthesized UCNPs, (ii) calcined UCNPs, (iii) polyvinylpyrrolidone (PVP), and (iv) CTAB-coated UCNPs were measured, which revealed the CTAB-coated UCNPs to be the most hydrophilic and the better-dispersed form in water. β-NaYF₄:Yb/Tm@ZIF-8 composites formed using the CTAB-coated UCNPs were then converted into β-NaYF₄:Yb/Tm@ZnO nanoparticles by calcination under carefully controlled conditions. Photoluminescence analysis confirmed the upconversion process for the UCNP core, which allows the β-NaYF₄:Yb/Tm@ZnO nanoparticles to photogenerate reactive oxygen species (ROS) when activated by near-infrared (NIR) radiation. The NIR-activated UCNPs@ZnO nanoparticles demonstrated potent efficacy against both Staphylococcus aureus (WCH-SK2) and its associated SCV form (0.67 and 0.76 log colony forming unit (CFU) reduction, respectively), which was attributed to ROS generated from the NIR activated β-NaYF₄:Yb/Tm@ZnO nanoparticles.

Triple-Stack ZnO/AlZnO/YZnO Heterojunction Oxide Thin-Film Transistors by Spray Pyrolysis for High Mobility and Excellent Stability

We demonstrate a high mobility, triple-stack ZnO/AlZnO/YZnO heterojunction thin-film transistor (TFT) using the semiconductors deposited by spray pyrolysis at 350 °C on an Al₂O₃ gate insulator. A thin layer (5 nm) of AlZnO on the top of ZnO used as an active layer of an inverted coplanar-structured TFT increases the field-effect mobility (μ_FE) from 42.56 to 82.7 cm² V^-1 s^-1. An additional 5 nm thick YZnO on the top of the ZnO/AlZnO TFT improves the electrical stability by reducing the defects in the bulk ZnO, AlZnO, and at the interface AlO_x/ZnO. The ZnO-based materials show a nanocrystalline structure with the grain size less than 20 nm. The triple-stack oxide TFT shows a μ_FE of 71.3 cm² V^-1 s^-1 with a threshold voltage (V_TH) of 2.85 V. The hysteresis voltage for pristine ZnO, ZnO/AlZnO, and ZnO/AlZnO/YZnO TFTs is 0.52, 0.24, and 0.02 V, respectively. The ZnO/AlZnO/YZnO TFT shows a negligible V_TH shift under temperature bias stress for 3600 s at 60 °C and excellent environmental stability over a few months, which is due to the presence of stronger Y-O and Al-O bonds in the back channel. The threshold voltage shift under positive bias temperature stress for pristine ZnO, ZnO/AlZnO, and ZnO/AlZnO/YZnO TFTs is 0.78, 0.40, and 0.15 V, respectively. Compared to the pristine ZnO TFT, the ZnO/AlZnO/YZnO TFT shows better environmental and bias stabilities with improved hysteresis. The experimental data of ZnO/AlZnO and ZnO/AlZnO/YZnO TFTs can be fitted by technology computer-aided design (TCAD) simulation using the density of states model of the oxide semiconductors. From the TCAD simulation, it is found that a 2D-like electron gas is formed at the narrow AlZnO layer between ZnO and YZnO.

The Role of Electric Pressure/Stress Suppressing Pinhole Defect on Coalescence Dynamics of Electrified Droplet

The dimple occurs by sudden pressure inversion at the droplet’s bottom interface when a droplet collides with the same liquid-phase or different solid-phase. The air film entrapped inside the dimple is a critical factor affecting the sequential dynamics after coalescence and causing defects like the pinhole. Meanwhile, in the coalescence dynamics of an electrified droplet, the droplet’s bottom interfaces change to a conical shape, and droplet contact the substrate directly without dimple formation. In this work, the mechanism for the dimple’s suppression (interfacial change to conical shape) was studied investigating the effect of electric pressure. The electric stress acting on a droplet interface shows the nonlinear electric pressure adding to the uniform droplet pressure. This electric stress locally deforms the droplet’s bottom interface to a conical shape and consequentially enables it to overcome the air pressure beneath the droplet. The electric pressure, calculated from numerical tracking for interface and electrostatic simulation, was at least 108 times bigger than the air pressure at the center of the coalescence. This work helps toward understanding the effect of electric stress on droplet coalescence and in the optimization of conditions in solution-based techniques like printing and coating.