Ultrafast spatiotemporal photocarrier dynamics near GaN surfaces studied by terahertz emission spectroscopy

Near-field terahertz nonlinear optics with blue light

The coupling of terahertz optical techniques to scattering-type scanning near-field microscopy (s-SNOM) has recently emerged as a valuable new paradigm for probing the properties of semiconductors and other materials on the nanoscale. Researchers have demonstrated a family of related techniques, including terahertz nanoscopy (elastic scattering, based on linear optics), time-resolved methods, and nanoscale terahertz emission spectroscopy. However, as with nearly all examples of s-SNOM since the technique's inception in the mid-1990s, the wavelength of the optical source coupled to the near-field tip is long, usually at energies of 2.5 eV or less. Challenges in coupling of shorter wavelengths (i.e., blue light) to the nanotip has greatly inhibited the study of nanoscale phenomena in wide bandgap materials such as Si and GaN. Here, we describe the first experimental demonstration of s-SNOM using blue light. With femtosecond pulses at 410 nm, we generate terahertz pulses directly from bulk silicon, spatially resolved with nanoscale resolution, and show that these signals provide spectroscopic information that cannot be obtained using near-infrared excitation. We develop a new theoretical framework to account for this nonlinear interaction, which enables accurate extraction of material parameters. This work establishes a new realm of possibilities for the study of technologically relevant wide-bandgap materials using s-SNOM methods.

Ultrafast Third-Order Nonlinear Optical Response Excited by fs Laser Pulses at 1550 nm in GaN Crystals

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.

Gallium nitride catalyzed the direct hydrogenation of carbon dioxide to dimethyl ether as primary product

The selective hydrogenation of CO₂ to value-added chemicals is attractive but still challenged by the high-performance catalyst. In this work, we report that gallium nitride (GaN) catalyzes the direct hydrogenation of CO₂ to dimethyl ether (DME) with a CO-free selectivity of about 80%. The activity of GaN for the hydrogenation of CO₂ is much higher than that for the hydrogenation of CO although the product distribution is very similar. The steady-state and transient experimental results, spectroscopic studies, and density functional theory calculations rigorously reveal that DME is produced as the primary product via the methyl and formate intermediates, which are formed over different planes of GaN with similar activation energies. This essentially differs from the traditional DME synthesis via the methanol intermediate over a hybrid catalyst. The present work offers a different catalyst capable of the direct hydrogenation of CO₂ to DME and thus enriches the chemistry for CO₂ transformations.

The conversion of CO₂ to valuable chemicals is still challenged by catalyst developments. Herein, the authors found that GaN is an efficient catalyst for selective CO₂ hydrogenation to dimethyl ether as the primary product, in contrast to the traditional methanol-intermediate route over hybrid catalysts.

Terahertz Emission Spectroscopy and Microscopy on Ultrawide Bandgap Semiconductor β-Ga2O3

Although gallium oxide Ga2O3 is attracting much attention as a next-generation ultrawide bandgap semiconductor for various applications, it needs further optical characterization to support its use in higher-performance devices. In the present study, terahertz (THz) emission spectroscopy (TES) and laser THz emission microscopy (LTEM) are applied to Sn-doped, unintentionally doped, and Fe-doped β-Ga2O3 wafers. Femtosecond (fs) laser illumination generated THz waves based on the time derivative of the photocurrent. TES probes the motion of ultrafast photocarriers that are excited into a conduction band, and LTEM visualizes their local spatiotemporal movement at a spatial and temporal resolution of laser beam diameter and a few hundred fs. In contrast, one observes neither photoluminescence nor distinguishable optical absorption for a band-to-band transition for Ga2O3. TES/LTEM thus provides complementary information on, for example, the local mobility, surface potential, defects, band bending, and anisotropic photo-response in a noncontact, nondestructive manner. The results indicated that the band bends downward at the surface of an Fe-doped wafer, unlike with an n-type wafer, and the THz emission intensity is qualitatively proportional to the product of local electron mobility and diffusion potential, and is inversely proportional to penetration depth, all of which have a strong correlation with the quality of the materials and defects/impurities in them.