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Haider ASMR, Hezam AFAM, Islam MA, Arafat Y, Ferdaous MT, Salehin S, Karim MR. Temperature-dependent failure of atomically thin MoTe 2. J Mol Model 2024; 30:86. [PMID: 38413404 DOI: 10.1007/s00894-024-05883-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2023] [Accepted: 02/20/2024] [Indexed: 02/29/2024]
Abstract
CONTEXT In this study, we investigated the mechanical responses of molybdenum ditelluride (MoTe2) using molecular dynamics (MD) simulations. Our key focus was on the tensile behavior of MoTe2 with trigonal prismatic phase (2H-MoTe2) which was investigated under uniaxial tensile stress for both armchair and zigzag directions. Crack formation and propagation were examined to understand the fracture behavior of such material for varying temperatures. Additionally, the study also assesses the impact of temperature on Young's modulus and fracture stress-strain of a monolayer of 2H-MoTe2. METHOD The investigation was done using molecular dynamics (MD) simulations using Stillinger-Weber (SW) potentials. The tensile behavior was simulated for temperature for 10 K and then from 100 to 600 K with a 100-K interval. The crack propagation and formation of 10 K and 300 K 2H-MoTe2 for both directions at different strain rates was analyzed using Ovito visualizer. All the simulations were conducted using a strain rate of 10-4 ps-1. The results show that the fracture strength of 2H-MoTe2 in the armchair and zigzag direction at 10 K is 16.33 GPa (11.43 N/m) and 13.71429 GPa (9.46 N/m) under a 24% and 18% fracture strain, respectively. The fracture strength of 2H-MoTe2 in the armchair and zigzag direction at 600 K is 10.81 GPa (7.56 N/m) and 10.13 GPa (7.09 N/m) under a 12.5% and 12.47% fracture strain, respectively.
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Affiliation(s)
- A S M Redwan Haider
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh
| | | | - Md Akibul Islam
- Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, Canada.
| | - Yeasir Arafat
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh
| | - Mohammad Tanvirul Ferdaous
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh
| | - Sayedus Salehin
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh
| | - Md Rezwanul Karim
- Depatment of Mechanical and Production Engineering, Islamic University of Technology, Gazipur, Bangladesh.
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Han J, Zeng Q, Chen K, Yu X, Dai J. Lattice Thermal Conductivity of Monolayer InSe Calculated by Machine Learning Potential. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091576. [PMID: 37177121 PMCID: PMC10180940 DOI: 10.3390/nano13091576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2023] [Revised: 05/05/2023] [Accepted: 05/07/2023] [Indexed: 05/15/2023]
Abstract
The two-dimensional post-transition-metal chalcogenides, particularly indium selenide (InSe), exhibit salient carrier transport properties and evince extensive interest for broad applications. A comprehensive understanding of thermal transport is indispensable for thermal management. However, theoretical predictions on thermal transport in the InSe system are found in disagreement with experimental measurements. In this work, we utilize both the Green-Kubo approach with deep potential (GK-DP), together with the phonon Boltzmann transport equation with density functional theory (BTE-DFT) to investigate the thermal conductivity (κ) of InSe monolayer. The κ calculated by GK-DP is 9.52 W/mK at 300 K, which is in good agreement with the experimental value, while the κ predicted by BTE-DFT is 13.08 W/mK. After analyzing the scattering phase space and cumulative κ by mode-decomposed method, we found that, due to the large energy gap between lower and upper optical branches, the exclusion of four-phonon scattering in BTE-DFT underestimates the scattering phase space of lower optical branches due to large group velocities, and thus would overestimate their contribution to κ. The temperature dependence of κ calculated by GK-DP also demonstrates the effect of higher-order phonon scattering, especially at high temperatures. Our results emphasize the significant role of four-phonon scattering in InSe monolayer, suggesting that combining molecular dynamics with machine learning potential is an accurate and efficient approach to predict thermal transport.
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Affiliation(s)
- Jinsen Han
- Department of Physics, National University of Defense Technology, Changsha 410073, China
- Hunan Key Laboratory of Extreme Matter and Applications, National University of Defense Technology, Changsha 410073, China
| | - Qiyu Zeng
- Department of Physics, National University of Defense Technology, Changsha 410073, China
- Hunan Key Laboratory of Extreme Matter and Applications, National University of Defense Technology, Changsha 410073, China
| | - Ke Chen
- Department of Physics, National University of Defense Technology, Changsha 410073, China
- Hunan Key Laboratory of Extreme Matter and Applications, National University of Defense Technology, Changsha 410073, China
| | - Xiaoxiang Yu
- Department of Physics, National University of Defense Technology, Changsha 410073, China
- Hunan Key Laboratory of Extreme Matter and Applications, National University of Defense Technology, Changsha 410073, China
| | - Jiayu Dai
- Department of Physics, National University of Defense Technology, Changsha 410073, China
- Hunan Key Laboratory of Extreme Matter and Applications, National University of Defense Technology, Changsha 410073, China
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Wan W, Guo R, Ge Y, Liu Y. Carrier and phonon transport in 2D InSe and its Janus structures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:133001. [PMID: 36634370 DOI: 10.1088/1361-648x/acb2a5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Accepted: 01/12/2023] [Indexed: 06/17/2023]
Abstract
Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mobility, thermal conductivity, and thermoelectric characteristics of 2D InSe. Based on the Boltzmann transport equation (BTE), the mechanisms underlying carrier or phonon scattering of 2D InSe were discussed in detail. Moreover, the structural and transport properties of Janus structures based on InSe were also presented, with an emphasis on the theoretical simulations. At last, we discussed the prospects for continued research of 2D InSe.
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Affiliation(s)
- Wenhui Wan
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Rui Guo
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yanfeng Ge
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
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Pham VT, Fang TH. Mechanical and thermal characterizations of nanoporous two-dimensional boron nitride membranes. Sci Rep 2022; 12:6306. [PMID: 35428858 PMCID: PMC9012750 DOI: 10.1038/s41598-022-10424-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2022] [Accepted: 04/05/2022] [Indexed: 11/09/2022] Open
Abstract
Hexagonal boron nitride (h-BN) is a promising 2D material due to its outstanding mechanical and thermal properties. In the present study, we use molecular dynamics simulations to investigate the influence of porosity and temperature on the mechanical characteristics of h-BN based on uniaxial and biaxial tensions. Meanwhile, the progression of the microstructure of h-BN up to fracture is studied in order to clarify its fractures mechanism during the tension process. Our results reveal that depending on the porosity and tensile direction, the phase transition occurs more or less. The strength, and Young's modulus of h-BN membranes reduce as increasing porosity. Due to the presence of the pores, the most substantial stresses will be centred around the pores site in the tensile test. Then the fracture starts on the pore edge and spreads preferentially along the zigzag direction of h-BN. Furthermore, fracture strain, strength, and Young's modulus decrease when the temperature rises. In addition, the non-equilibrium molecular dynamics (NEMD) simulations are performed to investigate the influence of various porosities and temperatures on the thermal conductivity of h-BN membranes. The results reveal that the thermal conductivity is greatly reduced by nanoporous. The higher the porosity, the lower the thermal conductivity. The vibration density of states of h-BN membranes is calculated; the result suggests that the defects might reduce the phonon mean free path because of the high collision of the phonons. These alterations represent the scattering influence of defects on phonons, which reduces phonon life and considerably lowers thermal conductivity. Moreover, the findings also proved that as temperature increases, the intrinsic thermal conductivity of h-BN decreases. The thermal conductivity and mechanical properties of the pristine h-BN thin film are interestingly equivalent in the zigzag and armchair orientations.
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Affiliation(s)
- Van-Trung Pham
- Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan.,Department of Mechanical Engineering, Pham Van Dong University, Quang Ngai, 570000, Vietnam
| | - Te-Hua Fang
- Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan.
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Sui F, Jin M, Zhang Y, Hong J, Cheng Y, Qi R, Yue F, Huang R. Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:224006. [PMID: 35290970 DOI: 10.1088/1361-648x/ac5e07] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Accepted: 03/15/2022] [Indexed: 06/14/2023]
Abstract
As a narrow-gap semiconductor, III-VI two-dimensional (2D) van der Waals layered indium selenide (InSe) has attracted a lot of attention due to excellent physical properties. For potential optoelectronic applications, the tunability of the optical property is challenging, e.g., the modulation of optical bandgap commonly by element doping. However, the deep understanding of the influence of element doping on the microstructure and the optical properties lacks of systematic investigation. In this work, by using aberration-corrected high-angle annular dark-field scanning transmission electron microscopy, we investigate the influence of Bi doping on controlling of the microstructure and optical properties of InSe single crystal in detail. The results show that Bi doping can introduce additional stacking faults in InSe single crystal, and more importantly, the atomic spacing and lattice constant of Bi-doped InSe are changed a lot as compared to that of the undoped one. Further optical characterizations including photoluminescence and transmission spectra reveal that Bi-doping can broaden the transmission wavelength range of InSe and make its optical bandgap blue-shift, which can also be physically interpreted from the doping-induced structure change. Our work expands new ideas for the optical property modulation of 2D thin-layer materials and brings new possibilities for the development of thin-layer InSe optical devices.
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Affiliation(s)
- Fengrui Sui
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Min Jin
- College of Materials, Shanghai Dianji University, Shanghai 201306, People's Republic of China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Jin Hong
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
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Pham VT, Fang TH. Understanding porosity and temperature induced variabilities in interface, mechanical characteristics and thermal conductivity of borophene membranes. Sci Rep 2021; 11:12123. [PMID: 34108570 PMCID: PMC8190318 DOI: 10.1038/s41598-021-91705-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2021] [Accepted: 05/31/2021] [Indexed: 02/05/2023] Open
Abstract
Evaluating the effect of porosity and ambient temperature on mechanical characteristics and thermal conductivity is vital for practical application and fundamental material property. Here we report that ambient temperature and porosity greatly influence fracture behavior and material properties. With the existence of the pore, the most significant stresses will be concentrated around the pore position during the uniaxial and biaxial processes, making fracture easier to occur than when tensing the perfect sheet. Ultimate strength and Young's modulus degrade as porosity increases. The ultimate strength and Young's modulus in the zigzag direction is lower than the armchair one, proving that the borophene membrane has anisotropy characteristics. The deformation behavior of borophene sheets when stretching biaxial is more complicated and rough than that of uniaxial tension. In addition, the results show that the ultimate strength, failure strain, and Young's modulus degrade with growing temperature. Besides the tensile test, this paper also uses the non-equilibrium molecular dynamics (NEMD) approach to investigate the effects of length size, porosity, and temperature on the thermal conductivity (κ) of borophene membranes. The result points out that κ increases as the length increases. As the ambient temperature increases, κ decreases. Interestingly, the more porosity increases, the more κ decreases. Moreover, the results also show that the borophene membrane is anisotropic in heat transfer.
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Affiliation(s)
- Van-Trung Pham
- Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan
- Department of Mechanical Engineering, Pham Van Dong University, Quang Ngai, 570000, Vietnam
| | - Te-Hua Fang
- Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan.
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