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Houimi A, Basyooni-M Kabatas MA, Yilmaz M, Eker YR. MoO 3 nanowire growth on VO 2/WO 3 for thermochromic applications. Phys Chem Chem Phys 2024; 26:5548-5557. [PMID: 38284209 DOI: 10.1039/d3cp05942a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
This study explores the structural, electronic, and optical properties of sandwich-structured thin films composed of WO3, MoWO3, and MoO3 as window layers on VO2/WO3via a physical vapor deposition method. Morphological analysis demonstrates the evolution of distinct nanowires, offering insights into the lattice strain of the VO2 layer toward high-performance thermochromatic devices. Temperature-dependent sheet resistivity is investigated, showcasing significant improvements in conductivity for samples with MoO3 as a window layer. The electrical and optical properties of the MoO3/VO2/WO3 device showed a phase transition temperature (Tc) of 36.8 °C, a transmittance luminous (Tlum) of 54.57%, and a solar modulation ability (ΔTsol) of 12.43. This comprehensive analysis contributes to understanding the growth of nanowires on multi-layered thin films, offering valuable insights into potential applications in bright windows.
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Affiliation(s)
- Amina Houimi
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey.
- UNAM, Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 068000, Turkey
| | - Mohamed A Basyooni-M Kabatas
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey.
- Dynamics of Micro and Nano Systems Group, Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands.
- Solar Research Laboratory, Solar and Space Research Department, National Research Institute of Astronomy and Geophysics, 11421 Cairo, Egypt
| | - Mucahit Yilmaz
- Department of Fundamental Science, Necmettin Erbakan University, Konya, Turkey
| | - Yasin Ramazan Eker
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey.
- Department of Basic Sciences, Faculty of Engineering, Necmettin Erbakan University, Konya 42090, Turkey
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Basyooni-M. Kabatas MA. A Comprehensive Review on Electrocatalytic Applications of 2D Metallenes. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2966. [PMID: 37999320 PMCID: PMC10675246 DOI: 10.3390/nano13222966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2023] [Revised: 11/15/2023] [Accepted: 11/16/2023] [Indexed: 11/25/2023]
Abstract
This review introduces metallenes, a cutting-edge form of atomically thin two-dimensional (2D) metals, gaining attention in energy and catalysis. Their unique physicochemical and electronic properties make them promising for applications like catalysis. Metallenes stand out due to their abundance of under-coordinated metal atoms, enhancing the catalytic potential by improving atomic utilization and intrinsic activity. This review explores the utility of 2D metals as electrocatalysts in sustainable energy conversion, focusing on the Oxygen Evolution Reaction, Oxygen Reduction Reaction, Fuel Oxidation Reaction, and Carbon Dioxide Reduction Reaction. Aimed at researchers in nanomaterials and energy, the review is a comprehensive resource for unlocking the potential of 2D metals in creating a sustainable energy landscape.
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Affiliation(s)
- Mohamed A. Basyooni-M. Kabatas
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands; or
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
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Yoon J, Hong WK, Kim Y, Park SY. Nanostructured Vanadium Dioxide Materials for Optical Sensing Applications. SENSORS (BASEL, SWITZERLAND) 2023; 23:6715. [PMID: 37571499 PMCID: PMC10422301 DOI: 10.3390/s23156715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/21/2023] [Accepted: 07/23/2023] [Indexed: 08/13/2023]
Abstract
Vanadium dioxide (VO2) is one of the strongly correlated materials exhibiting a reversible insulator-metal phase transition accompanied by a structural transition from a low-temperature monoclinic phase to high-temperature rutile phase near room temperature. Due to the dramatic change in electrical resistance and optical transmittance of VO2, it has attracted considerable attention towards the electronic and optical device applications, such as switching devices, memory devices, memristors, smart windows, sensors, actuators, etc. The present review provides an overview of several methods for the synthesis of nanostructured VO2, such as solution-based chemical approaches (sol-gel process and hydrothermal synthesis) and gas or vapor phase synthesis techniques (pulsed laser deposition, sputtering method, and chemical vapor deposition). This review also presents stoichiometry, strain, and doping engineering as modulation strategies of physical properties for nanostructured VO2. In particular, this review describes ultraviolet-visible-near infrared photodetectors, optical switches, and color modulators as optical sensing applications associated with nanostructured VO2 materials. Finally, current research trends and perspectives are also discussed.
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Affiliation(s)
- Jongwon Yoon
- Department of Energy & Electronic Materials, Surface & Nano Materials Division, Korea Institute of Materials Science, Changwon 51508, Republic of Korea;
| | - Woong-Ki Hong
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Republic of Korea;
| | - Yonghun Kim
- Department of Energy & Electronic Materials, Surface & Nano Materials Division, Korea Institute of Materials Science, Changwon 51508, Republic of Korea;
| | - Seung-Young Park
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Republic of Korea;
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Wu W, Liu Y, Yao J, Ouyang X. Mixed-Cation Halide Perovskite Doped with Rb + for Highly Efficient Photodetector. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16103796. [PMID: 37241422 DOI: 10.3390/ma16103796] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 04/30/2023] [Accepted: 05/12/2023] [Indexed: 05/28/2023]
Abstract
Photodetectors are widely employed as fundamental devices in optical communication, automatic control, image sensors, night vision, missile guidance, and many other industrial or military fields. Mixed-cation perovskites have emerged as promising optoelectronic materials for application in photodetectors due to their superior compositional flexibility and photovoltaic performance. However, their application involves obstacles such as phase segregation and poor-quality crystallization, which introduce defects in perovskite films and adversely affect devices' optoelectronic performance. The application prospects of mixed-cation perovskite technology are significantly constrained by these challenges. Therefore, it is necessary to investigate strategies that combine crystallinity control and defect passivation to obtain high-quality thin films. In this study, we incorporated different Rb+ ratios in triple-cation (CsMAFA) perovskite precursor solutions and studied their effects on crystal growth. Our results show that a small amount of Rb+ was enough to induce the crystallization of the α-FAPbI3 phase and suppress the formation of the yellow non-photoactive phase; the grain size increased, and the product of the carrier mobility and the lifetime (μτ) improved. As a result, the fabricated photodetector exhibited a broad photo-response region, from ultraviolet to near-infrared, with maximum responsivity (R) up to 11.8 mA W-1 and excellent detectivity (D*) values up to 5.33 × 1011 Jones. This work provides a feasible strategy to improve photodetectors' performance via additive engineering.
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Affiliation(s)
- Wei Wu
- School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China
| | - Yang Liu
- School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China
- State Key Laboratory of Nuclear Resources and Environment, East China University of Technology, Nanchang 330013, China
| | - Jianxi Yao
- School of Renewable Energy, North China Electric Power University, Beijing 102206, China
| | - Xiaoping Ouyang
- School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China
- State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi'an 710024, China
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Basyooni MA, Gaballah AEH, Tihtih M, Derkaoui I, Zaki SE, Eker YR, Ateş Ş. Thermionic Emission of Atomic Layer Deposited MoO 3/Si UV Photodetectors. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2766. [PMID: 37049060 PMCID: PMC10095631 DOI: 10.3390/ma16072766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 03/24/2023] [Accepted: 03/28/2023] [Indexed: 06/19/2023]
Abstract
Ultrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO3 film at temperatures of 100, 150, 200, and 250 °C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported. The ON-OFF and the photodetector dynamic behaviors of these samples under different applied voltages of 0, 0.5, 1, 2, 3, 4, and 5 V were collected. This study shows that the ultrasmooth and homogenous films of less than a 0.30 nm roughness deposited at 200 °C were used efficiently for high-performance UV photodetector behaviors with a high sheet carrier concentration of 7.6 × 1010 cm-2 and external quantum efficiency of 1.72 × 1011. The electronic parameters were analyzed based on thermionic emission theory, where Cheung and Nord's methods were utilized to determine the photodetector electronic parameters, such as the ideality factor (n), barrier height (Φ0), and series resistance (Rs). The n-factor values were higher in the low voltage region of the I-V diagram, potentially due to series resistance causing a voltage drop across the interfacial thin film and charge accumulation at the interface states between the MoO3 and Si surfaces.
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Affiliation(s)
- Mohamed A. Basyooni
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey
- Solar and Space Research Department, National Research Institute of Astronomy and Geophysics (NRIAG), Cairo 11421, Egypt
| | - A. E. H. Gaballah
- Photometry and Radiometry Division, National Institute of Standards (NIS), Tersa St, Al-Haram, Giza 12211, Egypt
| | - Mohammed Tihtih
- Institute of Ceramics and Polymer Engineering, University of Miskolc, H-3515 Miskolc, Hungary
| | - Issam Derkaoui
- Laboratory of Solid-State Physics, Faculty of Sciences Dhar el Mahraz, University Sidi Mohammed Ben Abdellah, P.O. Box 1796, Atlas Fez 30000, Morocco
| | - Shrouk E. Zaki
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
- Theoretical Physics Department, National Research Center, Dokki, Cairo 12622, Egypt
| | - Yasin Ramazan Eker
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey
- Department of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya 42060, Turkey
| | - Şule Ateş
- Department of Physics, Faculty of Science, Selçuk University, Konya 42075, Turkey
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Basyooni MA, Zaki SE, Alfryyan N, Tihtih M, Eker YR, Attia GF, Yılmaz M, Ateş Ş, Shaban M. Nanostructured MoS 2 and WS 2 Photoresponses under Gas Stimuli. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3585. [PMID: 36296777 PMCID: PMC9607979 DOI: 10.3390/nano12203585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 09/27/2022] [Accepted: 09/30/2022] [Indexed: 06/16/2023]
Abstract
This study was on the optoelectronic properties of multilayered two-dimensional MoS2 and WS2 materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO2, and O2 environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS2 (n-type)/Si (p-type) and WS2 (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 105 cm-2 for WS2 thin film. The IV electrical results revealed that WS2 is more reactive than MoS2 film under different gas stimuli. WS2 film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 102 cm2/V. WS2 film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO2 environment was observed. Additionally, the external quantum efficiency of WS2 revealed a remarkable enhancement in the CO2 environment of 1.62 × 108 compared to MoS2 film with 6.74 × 106. According to our findings, the presence of CO2 on the surface of WS2 improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS2 as a photodetector under gas stimuli for future optoelectronic applications.
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Affiliation(s)
- Mohamed A. Basyooni
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
- Department of Nanoscience and Nanoengineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya 42060, Turkey
| | - Shrouk E. Zaki
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
- Theoretical Physics Department, National Research Center, Cairo 12622, Egypt
| | - Nada Alfryyan
- Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
| | - Mohammed Tihtih
- Institute of Ceramics and Polymer Engineering, University of Miskolc, H-3515 Miskolc, Hungary
| | - Yasin Ramazan Eker
- Department of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya 42060, Turkey
| | - Gamal F. Attia
- Department of Solar and Space Research, National Research Institute of Astronomy and Geophysics (NRIAG), Cairo 11421, Egypt
| | - Mücahit Yılmaz
- Department of Nanoscience and Nanoengineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya 42060, Turkey
| | - Şule Ateş
- Department of Physics, Faculty of Science, Selçuk University, Konya 42075, Turkey
| | - Mohamed Shaban
- Department of Physics, Faculty of Science, Islamic University of Madinah, P.O. Box 170, AlMadinah Almonawara 42351, Saudi Arabia
- Nanophotonics and Applications Laboratory, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt
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Basyooni MA, Zaki SE, Tihtih M, Eker YR, Ateş Ş. Photonic bandgap engineering in (VO 2) n/(WSe 2) nphotonic superlattice for versatile near- and mid-infrared phase transition applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:325901. [PMID: 35588726 DOI: 10.1088/1361-648x/ac7189] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2022] [Accepted: 05/19/2022] [Indexed: 06/15/2023]
Abstract
The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO2) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VO2as a strongly correlated phase transition material and tungsten diselenide (WSe2) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VO2with WSe2in a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VO2layer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VO2thickness. For the monoclinic case of VO2, the number of the forbidden bands increase with the number of layers of WSe2. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.
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Affiliation(s)
- Mohamed A Basyooni
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey
| | - Shrouk E Zaki
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
| | - Mohammed Tihtih
- Institute of Ceramic and Polymer Engineering, University of Miskolc, Miskolc 3515, Hungary
| | - Yasin Ramazan Eker
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey
- Department of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya 42060, Turkey
| | - Şule Ateş
- Department of Physics, Faculty of Science, Selçuk University, Konya 42075, Turkey
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Basyooni MA, Al-Dossari M, Zaki SE, Eker YR, Yilmaz M, Shaban M. Tuning the Metal-Insulator Transition Properties of VO 2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1470. [PMID: 35564181 PMCID: PMC9099983 DOI: 10.3390/nano12091470] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Revised: 04/20/2022] [Accepted: 04/20/2022] [Indexed: 02/01/2023]
Abstract
Vanadium oxide (VO2) is considered a Peierls-Mott insulator with a metal-insulator transition (MIT) at Tc = 68° C. The tuning of MIT parameters is a crucial point to use VO2 within thermoelectric, electrochromic, or thermochromic applications. In this study, the effect of oxygen deficiencies, strain engineering, and metal tungsten doping are combined to tune the MIT with a low phase transition of 20 °C in the air without capsulation. Narrow hysteresis phase transition devices based on multilayer VO2, WO3, Mo0.2W0.8O3, and/or MoO3 oxide thin films deposited through a high vacuum sputtering are investigated. The deposited films are structurally, chemically, electrically, and optically characterized. Different conductivity behaviour was observed, with the highest value towards VO1.75/WO2.94 and the lowest VO1.75 on FTO glass. VO1.75/WO2.94 showed a narrow hysteresis curve with a single-phase transition. Thanks to the role of oxygen vacancies, the MIT temperature decreased to 35 °C, while the lowest value (Tc = 20 °C) was reached with Mo0.2W0.8O3/VO2/MoO3 structure. In this former sample, Mo0.2W0.8O3 was used for the first time as an anti-reflective and anti-oxidative layer. The results showed that the MoO3 bottom layer is more suitable than WO3 to enhance the electrical properties of VO2 thin films. This work is applied to fast phase transition devices.
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Affiliation(s)
- Mohamed A. Basyooni
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey; (M.A.B.); (S.E.Z.)
- Department of Nanoscience and Nanoengineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya 42060, Turkey;
- Science and Technology Research and Application Center (BITAM), University of Necmettin Erbakan, Konya 42060, Turkey
| | - Mawaheb Al-Dossari
- Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha 61413, Saudi Arabia;
- Department of Physics, Dhahran Aljanoub, King Khalid University, Abha 61421, Saudi Arabia
| | - Shrouk E. Zaki
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey; (M.A.B.); (S.E.Z.)
- Science and Technology Research and Application Center (BITAM), University of Necmettin Erbakan, Konya 42060, Turkey
| | - Yasin Ramazan Eker
- Science and Technology Research and Application Center (BITAM), University of Necmettin Erbakan, Konya 42060, Turkey
- Department of Metallurgy and Material Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University, Konya 42060, Turkey
| | - Mucahit Yilmaz
- Department of Nanoscience and Nanoengineering, Institute of Science and Technology, University of Necmettin Erbakan, Konya 42060, Turkey;
| | - Mohamed Shaban
- Department of Physics, Faculty of Science, Islamic University of Madinah, AlMadinah Almonawara 42351, Saudi Arabia
- Nanophotonics and Applications Laboratory, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt
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Abstract
Molybdenum disulfide (MoS2) is one of the compounds discussed nowadays due to its outstanding properties that allowed its usage in different applications. Its band gap and its distinctive structure make it a promising material to substitute graphene and other semiconductor devices. It has different applications in electronics especially sensors like optical sensors, biosensors, electrochemical biosensors that play an important role in the detection of various diseases’ like cancer and Alzheimer. It has a wide range of energy applications in batteries, solar cells, microwave, and Terahertz applications. It is a promising material on a nanoscale level, with favorable characteristics in spintronics and magnetoresistance. In this review, we will discuss MoS2 properties, structure and synthesis techniques with a focus on its applications and future challenges.
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