An ab-initio study on structural, elastic, electronic, bonding, thermal, and optical properties of topological Weyl semimetal TaX (X = P, As)

Topological behavior of spectral singularities in topological Weyl semimetals

In this study, we examine the topological character of spectral singularities by using transverse magnetic (TM) mode configuration in a Topological Weyl Semimetal (TWSM). TM mode configuration restrains the effect of Kerr/Faraday rotations and therefore does not allow an extra degree of freedom to occur. We find out that surface currents arise due to topological terms on the surface of TWSM slab where no Fermi arcs are localized. We also investigate the contribution of the Θ-term, which is the origin of axions in topological materials, and especially theb-term, to the topological properties. As a result of our study, we clearly reveal the topological character ofb-term for the first time and we demonstrate the Weyl degeneracy situation in an obvious manner. Our system produces circular currents in the plane of propagation, maintaining a cyclotron shape motion. The presence ofb-term causes the induced current to be topologically protected. Our findings verify that topological properties of TWSM containing two opposite chirality Weyl fermions are robust against external influences. With the findings of our study, the appropriate conditions for the construction of a topological laser and the values that the system parameters can take have been demonstrated.

A systematic first-principles investigation of the structural, electronic, mechanical, optical, and thermodynamic properties of Half-Heusler ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) for spintronics and optoelectronics applications

This paper is the first to look at the structural, electronic, mechanical, optical, and thermodynamic properties of the ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) half-Heusler (HH) using DFT based first principles method. The lattice parameters that we have calculated are very similar to those obtained in prior investigations with theoretical and experimental data. The positive phonon dispersion curve confirm the dynamical stability of ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The electronic band structure and DOS confirmed that the studied materials ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) are direct band gap semiconductors. The investigation also determined significant constants, including dielectric function, absorption, conductivity, reflectivity, refractive index, and loss function. These optical observations unveiled our compounds potential utilization in various electronic and optoelectronic device applications. The elastic constants were used to fulfill the Born criteria, confirming the mechanical stability and ductility of the solids ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The calculated elastic modulus revealed that our studied compounds are elastically anisotropic. Moreover, ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) has a very low minimum thermal conductivity (Kmin), and a low Debye temperature (θD), which indicating their appropriateness for utilization in thermal barrier coating (TBC) applications. The Helmholtz free energy (F), internal energy (E), entropy (S), and specific heat capacity (Cv) are determined by calculations derived from the phonon density of states.

Comparative first principles investigation on the structural, optoelectronic and vibrational properties of strain-engineered graphene-like AlC3, BC3and C3N monolayers

Three cardinal two-dimensional semiconductorsviz., AlC3, BC3and C3N, closely resembling the graphene structure, are intriguing contenders for emerging optoelectronic and thermomechanical applications. Starting from a critical stability analysis, this density functional theory study delves into a quantitative assessment of structural, mechanical, electronic, optical, vibrational and thermodynamical properties of these monolayers as a function of biaxial strain(ε)in a sublinear regime(-2%⩽ε⩽4%)of elastic deformation. The structures with cohesive energies slightly smaller than graphene, manifest exceptional mechanical stiffness, flexibility and breaking stress. The mechanical parameters have been deployed to further cultivate acoustic attributes and thermal conductivity. The hexagonal structures with mixed ionic-covalent molecular bonds have indirect electronic band-gap and work-function acutely sensitive toε. Dispersions of optical dielectric function, energy loss, refractive index, extinction coefficient, reflectivity, absorption coefficient and conductivity are deciphered in the UV-Vis-NIR regime against strain, where particular frequency bands featuring high polarization, dissipation, absorbance or reflectance are identified. Phonon band-structure and density of states testify dynamic stability in the ground state for all systems except the compressed ones. A comprehensive group theoretical analysis is performed to cultivate rotational; infrared and Raman-active modes, and the nature of molecular vibrations is delineated. The red-shifting of phonon bands andE2g/A1gRaman peaks with increasingε, associates estimation of Grüneisen parameter. Finally, strain-induced alterations of thermodynamic quantities such as entropy, enthalpy, free energy, heat capacity and Debye temperature are studied, followed by a molecular dynamics-based stability assessment under canonical ensemble.

Predicting band gaps of ABN3 perovskites: an account from machine learning and first-principle DFT studies

The present paper is primarily focused on predicting the band gaps of nitride perovskites from machine learning (ML) models. The ML models have been framed from the feature descriptors and band gap values of 1563 inorganic nitride perovskites having formation energies <-0.026 eV and band gaps ranging from ∼1.0 to 3.1 eV. Four supervised ML models such as multi-layer perceptron (MLP), gradient boosted decision tree (GBDT), support vector regression (SVR) and random forest regression (RFR) have been considered to predict the band gaps of the said systems. The accuracy of each model has been tested from mean absolute error, root-mean-square error and determination coefficient R2 values. The bivariate plots between the predicted and input band gaps of the compounds for both the training and test datasets have also been estimated. Additionally, two ABN3-type nitride perovskites CeBN3 (B = Mo, W) have been selected and their electronic band structures and optoelectronic properties have been studied from density functional theory (DFT) calculations. The band gap values of the said compounds have been estimated from DFT calculations at PBE, HSE06, G0W0@PBE, G0W0@HSE06 level of theories. The present study will be helpful in exploring the ML models in predicting the band gaps of nitride perovskites which in turn may bear potential applications in photovoltaic cells and optical luminescent devices.

Exploration of the structural, optoelectronic, magnetic, elastic, vibrational, and thermodynamic properties of molybdenum-based chalcogenides A2MoSe4 (A =Li, K) for photovoltaics and spintronics applications: a first-principle study

CONTEXT

In the present work, the cubic phase of the chalcogenide materials, i.e., A2MoSe4 (A =Li, K) is examined to explore the structural, optoelectronic, magnetic, mechanical, vibrational, and thermodynamic properties. The lattice parameters for Li2MoSe4 are found to be a= 7.62 Å with lattice angles of α=β=γ=90° whereas for K2MoSe4, a= 8.43 Å, and α=β=γ=90°. These materials are categorized as semiconductors because Li2MoSe4 and K2MoSe4 exhibit direct energy band gap worth 1.32 eV and 1.61 eV, respectively through HSE06 functional. The optical analysis has declared them efficient materials for optoelectronic applications because both materials are found to be effective absorbers of ultraviolet radiations. These materials are noticed to be brittle while possessing anisotropic behavior for various mechanical applications. The vibrational properties are explored to check the thermal stability of the materials. On the basis of thermodynamics and heat capacity response, Li2MoSe4 is more stable than K2MoSe4. The results of our study lay the groundwork for future research on the physical characteristics of ternary transition metal chalcogenides (TMC).

METHODS

These physical properties are explored for the first time while using a first-principles approach based on density functional theory (DFT) in the framework of Cambridge Serial Total Energy Package (CASTEP) by Perdew-Burke-Ernzerhof generalized gradient approximation (PBE-GGA) functional. However, GGA+U and HSE06 are also employed to improve electronic properties. Kramers-Kronig relations are used to evaluate the dielectric function with a smearing value of 0.5 eV. Voigt-Reuss-Hill approximation is used for seeking the elastic response of these materials. The thermodynamic response is sought by harmonic approximation. The density functional perturbation theory (DFPT) approach is used for investigating atomic vibrations.

Bi2Te2Se and Sb2Te3 heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis

Topological insulators have emerged as one of the most promising candidates for the fabrication of novel electronic and optoelectronic devices due to the unique properties of nontrivial Dirac cones on the surface and a narrow bandgap in the bulk. In this work, the Sb2Te3 and Bi2Te2Se materials, and their heterostructure are fabricated by metal-organic chemical vapour deposition and evaporation techniques. Photodetection of these materials and their heterostructure shows that they detect light in a broadband range of 600 to 1100 nm with maximum photoresponse of Sb2Te3, Bi2Te2Se and Sb2Te3/Bi2Te2Se at 1100, 1000, and 1000 nm, respectively. The maximum responsivity values of Sb2Te3, Bi2Te2Se, and their heterostructure are 183, 341.8, and 245.9 A W-1 at 1000 nm, respectively. A computational study has also been done using density functional theory (DFT). Using the first-principles methods based on DFT, we have systematically investigated these topological insulators and their heterostructure's electronic and optical properties. The band structures of Sb2Te3 and Bi2Te2Se thin films (3 QL) and their heterostructure are calculated. The bandgaps of Sb2Te3 and Bi2Te2Se are 26.4 and 23 meV, respectively, while the Sb2Te3/Bi2Te2Se heterostructure shows metallic behaviour. For the optical properties, the dielectric function's real and imaginary parts are calculated using DFT and random phase approximation (RPA). It is observed that these topological materials and their heterostructure are light absorbers in a broadband range, with maximum absorption at 1.90, 2.40, and 3.21 eV.

DFT Insights into MAX Phase Borides Hf2AB [A = S, Se, Te] in Comparison with MAX Phase Carbides Hf2AC [A = S, Se, Te]

In this work, density functional theory (DFT)-based calculations were performed to compute the physical properties (structural stability, mechanical behavior, and electronic, thermodynamic, and optical properties) of synthesized MAX phases Hf2SB, Hf2SC, Hf2SeB, Hf2SeC, and Hf2TeB and the as-yet-undiscovered MAX carbide phase Hf2TeC. Calculations of formation energy, phonon dispersion curves, and elastic constants confirmed the stability of the aforementioned compounds, including the predicted Hf2TeC. The obtained values of lattice parameters, elastic constants, and elastic moduli of Hf2SB, Hf2SC, Hf2SeB, Hf2SeC, and Hf2TeB showed fair agreement with earlier studies, whereas the values of the aforementioned parameters for the predicted Hf2TeC exhibit a good consequence of B replacement by C. The anisotropic mechanical properties are exhibited by the considered MAX phases. The metallic nature and its anisotropic behavior were revealed by the electronic band structure and density of states. The analysis of the thermal properties-Debye temperature, melting temperature, minimum thermal conductivity, and Grüneisen parameter-confirmed that the carbide phases were more suited than the boride phases considered herein. The MAX phase's response to incoming photons further demonstrated that they were metallic. Their suitability for use as coating materials to prevent solar heating was demonstrated by the reflectivity spectra. Additionally, this study demonstrated the impact of B replacing C in the MAX phases.