2D layered SiP as anisotropic nonlinear optical material

Realization of Two-Dimensional Intrinsic Polar Metal in a Buckled Honeycomb Binary Lattice

Structural topology and symmetry of a two-dimensional (2D) network play pivotal roles in defining its electrical properties and functionalities. Here, a binary buckled honeycomb lattice with C3v symmetry, which naturally hosts topological Dirac fermions and out-of-plane polarity, is proposed. It is successfully achieved in a group IV-V compound, namely monolayer SiP epitaxially grown on Ag(111) surface. Combining first-principles calculations with angle-resolved photoemission spectroscopy, the degeneration of the Dirac nodal lines to points due to the broken horizonal mirror symmetry is elucidated. More interesting, the SiP monolayer manifests metallic nature, which is mutually exclusive with polarity in conventional materials. It is further found that the out-of-plane polarity is strongly suppressed by the metallic substrate. This study not only represents a breakthrough of realizing intrinsic polarity in 2D metallic material via ingenious design but also provides a comprehensive understanding of the intricate interplay of many exotic low-dimensional quantum phenomena.

Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces

The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The theoretical rationale is that the BCD can be generated at certain symmetry-mismatched van der Waals heterointerfaces even though each material has no BCD in its band structure. However, experimental confirmation of such a BCD induced via breaking of the interfacial symmetry remains elusive. Here we demonstrate a universal strategy for BCD generation and observe BCD-induced gate-tunable spin-polarized photocurrent at WSe2/SiP interfaces. Although the rotational symmetry of each material prohibits the generation of spin photocurrent under normal incidence of light, we surprisingly observe a direction-selective spin photocurrent at the WSe2/SiP heterointerface with a twist angle of 0°, whose amplitude is electrically tunable with the BCD magnitude. Our results highlight a BCD-spin-valley correlation and provide a universal approach for engineering the geometric features of twisted heterointerfaces.

Spin-orbit splitting and piezoelectric properties of Janus Ge2XY (X ≠ Y = P, As, Sb and Bi)

The coexistence of spin-orbit coupling and piezoelectricity in a single material may have potential application in multifunctional devices, including spintronics, nanorobotics and piezotronics. Spin-orbit coupling provides a new means to manipulate electron's spin without an additional external magnetic field, while piezoelectricity refers to the interplay between mechanical stresses and electric polarization. Using first-principles calculations, the structural, electronic, optical, spin, and piezoelectric properties of the Janus Ge₂XY (X ≠ Y = P, As, Sb, and Bi) monolayers were systematically investigated. All the Ge₂XY are energetically and dynamically stable in the α phase. At the GW level, Ge₂AsSb, Ge₂AsBi, and Ge₂SbBi have direct fundamental band gaps of 0.65, 0.64, and 0.91 eV. At the GW + BSE level, their optical gaps are 0.42, 0.45, and 0.63 eV, and the optical absorption coefficients can reach about 10^-5 cm^-1 in the infrared light region, which reveals that they have potential for application in infrared photodetectors. For Ge₂PBi, Ge₂AsBi, and Ge₂SbBi containing the heavy Bi element, the lowermost conduction band and uppermost valence band have large spin splitting along the M-K and K-Γ lines, and the bands near the Fermi level possess Rashba spin splitting at the Γ point. Ge₂PBi and Ge₂SbBi have both large in-plane piezoelectric coefficients d₁₁ (-0.75 and -3.18 pm V^-1) and out-of-plane piezoelectric coefficients d₃₁ (0.37 and 0.30 pm V^-1). Our findings are helpful to understand the mechanism of the spin-orbit physics and piezoelectricity of Janus Ge₂XY monolayers and guide experiments in exploring novel multifunctional materials.

Ultrastrong Optical Harmonic Generations in Layered Platinum Disulfide in the Mid-Infrared

Nonlinear optical activities (e.g., harmonic generations) in two-dimensional (2D) layered materials have attracted much attention due to the great promise in diverse optoelectronic applications such as nonlinear optical modulators, nonreciprocal optical device, and nonlinear optical imaging. Exploration of nonlinear optical response (e.g., frequency conversion) in the infrared, especially the mid-infrared (MIR) region, is highly desirable for ultrafast MIR laser applications ranging from tunable MIR coherent sources, MIR supercontinuum generation, and MIR frequency-comb-based spectroscopy to high harmonic generation. However, nonlinear optical effects in 2D layered materials under MIR pump are rarely reported, mainly due to the lack of suitable 2D layered materials. Van der Waals layered platinum disulfide (PtS₂) with a sizable bandgap from the visible to the infrared region is a promising candidate for realizing MIR nonlinear optical devices. In this work, we investigate the nonlinear optical properties including third-and fifth-harmonic generation (THG and FHG) in thin layered PtS₂ under infrared pump (1550-2510 nm). Strikingly, the ultrastrong third-order nonlinear susceptibility χ⁽³⁾(-3ω;ω,ω,ω) of thin layered PtS₂ in the MIR region was estimated to be over 10^-18 m²/V², which is about one order of that in traditional transition metal chalcogenides. Such excellent performance makes air-stable PtS₂ a potential candidate for developing next-generation MIR nonlinear photonic devices.

Large in-plane vibrational and optical anisotropy in natural 2D heterostructure abramovite

The design and formation of van der Waals (vdW) heterostructures with different two-dimensional (2D) materials provide an opportunity to create materials with extraordinary physical properties tailored toward specific applications. Mechanical exfoliation of natural vdW materials has been recognized as an effective way for producing high-quality ultrathin vdW heterostructures. Abramovite is one of such naturally occurring vdW materials, where the superlattice is composed of alternating Pb2BiS3 and SnInS4 2D material lattices. The forced commensuration between the two incommensurate constituent 2D material lattices induces in-plane structural anisotropy in the formed vdW heterostructure of abramovite, even though the individual 2D material lattices are isotropic in nature. Here, we show that ultrathin layers of vdW heterostructures of abramovite can be achieved by mechanical exfoliation of the natural mineral. Furthermore, the structural anisotropy induced highly anisotropic vibrational and optical responses of abramovite thin flakes are demonstrated by angle-resolved polarized Raman scattering, linear dichroism, and polarization-dependent third-harmonic generation. Our results not only establish abramovite as a promising natural vdW material with tailored linear and nonlinear optical properties for building future anisotropic integrated photonic devices, but also provide a deeper understanding of the origin of structural, vibrational and optical anisotropy in vdW heterostructures.

SiP Nanosheets: A Metal-Free Two-Dimensional Photocatalyst for Visible-Light Photocatalytic H2 Production and Nitrogen Fixation

Two-dimensional (2D) semiconductors for photocatalysis are more advantageous than the other photocatalytic materials since the 2D semiconductors generally have large specific surface area and abundant active sites. Phosphorus silicon (SiP), with an indirect bandgap in bulk and a direct bandgap in the monolayer, has recently emerged as an attractive 2D material because of its anisotropic layered structure, tunable bandgap, and high charge carrier mobility. However, the utilization of SiP as a photocatalyst for photocatalysis has been scarcely studied experimentally. Herein, we reported the synthesis of SiP nanosheets (SiP NSs) prepared from bulk SiP by an ultrasound-assisted liquid-phase exfoliation approach which can act as a metal-free, efficient, and visible-light-responsive photocatalyst for photocatalytic H₂ production and nitrogen fixation. In a half-reaction system, the maximal H₂ and NH₃ generation rate under visible light irradiation achieves 528 and 35 μmol·h^-1·g^-1, respectively. Additionally, the apparent quantum yield for H₂ production at 420 nm reaches 3.56%. Furthermore, a Z-scheme photocatalytic overall water-splitting system was successfully constructed by using Pt-loaded SiP NSs as the H₂-evolving photocatalyst, Co₃O₄/BiVO₄ as the O₂-evolving photocatalyst, and Co(bpy)₃^3+/2+ as an electron mediator. Notably, the highest H₂ and O₂ generation rate with respect to Pt/SiP NSs achieves 71 and 31 μmol·h^-1·g^-1, respectively. This study explores the potential application of 2D SiP as a metal-free visible-light-responsive photocatalyst for photocatalysis.

Anisotropic third-harmonic generation of exfoliated As2S3 thin flakes

Van der Waals (vdW) materials have recently attracted significant interest in the context of orientation-dependent linear and nonlinear optical properties. Recently, arsenic trisulfide (As₂S₃) or orpiment is identified as a new vdW layered material having anisotropic vibrational and optomechanical responses due to the reduced in-plane crystal symmetry, but its nonlinear optical response is still not well understood yet. Herein, the anisotropic third-harmonic generation (THG) response of mechanically exfoliated As₂S₃ thin flakes is reported. The polarization-dependent evolution of THG emission from butterfly-shaped pattern to four-lobe pattern is comprehensively explored. Moreover, the third-order nonlinear susceptibility of As₂S₃ crystal is extracted by analyzing the thickness-dependent THG emission. We anticipate that the discussed results will not only update the existing understanding on the nonlinear light-matter interaction in anisotropic vdW materials, but also promote future applications in integrated photonic circuits, on-chip nonlinear signal processing, and polarization-sensitive optical devices.

New Polymeric Composites Based on Two-Dimensional Nanomaterials for Biomedical Applications

The constant evolution and advancement of the biomedical field requires robust and innovative research. Two-dimensional nanomaterials are an emerging class of materials that have risen the attention of the scientific community. Their unique properties, such as high surface-to-volume ratio, easy functionalization, photothermal conversion, among others, make them highly versatile for a plethora of applications ranging from energy storage, optoelectronics, to biomedical applications. Recent works have proven the efficiency of 2D nanomaterials for cancer photothermal therapy (PTT), drug delivery, tissue engineering, and biosensing. Combining these materials with hydrogels and scaffolds can enhance their biocompatibility and improve treatment for a variety of diseases/injuries. However, given that the use of two-dimensional nanomaterials-based polymeric composites for biomedical applications is a very recent subject, there is a lot of scattered information. Hence, this review gathers the most recent works employing these polymeric composites for biomedical applications, providing the reader with a general overview of their potential.

Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Ultra-silicon-rich nitride with refractive indices ~ 3 possesses high nonlinear refractive index-100× higher than stoichiometric silicon nitride and presents absence of two-photon absorption, making it attractive to be used in nonlinear integrated optics at telecommunications wavelengths. Despite its excellent nonlinear properties, ultra-silicon-rich nitride photonics devices reported so far still have fairly low quality factors of [Formula: see text], which could be mainly attributed by the material absorption bonds. Here, we report low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si₈N) with lower material absorption bonds, and ~ 2.5× higher quality factors compared to ultra-silicon-rich nitride conventionally prepared with silane-based chemistry. This material is found to be highly rich in silicon with refractive indices of ~ 3.12 at telecommunications wavelengths and atomic concentration ratio Si:N of ~ 8:1. The material morphology, surface roughness and binding energies are also investigated. Optically, the material absorption bonds are quantified and show an overall reduction. Ring resonators fabricated exhibit improved intrinsic quality factors [Formula: see text], ~ 2.5× higher compared to conventional silane-based ultra-silicon-rich nitride films. This enhanced quality factor from plasma-deposited dichlorosilane-based ultra-silicon-rich nitride signifies better photonics device performance using these films. A pathway has been opened up for further improved device performance of ultra-silicon-rich nitride photonics devices at material level tailored by choice of different chemistries.

Semiconducting silicon-phosphorous frameworks for caging exotic polycations

A series of novel semiconductors AAe6Si12P20X (A = Na, K, Rb, Cs; Ae = Sr, Ba; X = Cl, Br, I) is reported. Their crystal structures feature tetrahedral Si-P framework...

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

Anisotropic optical responses of layered thallium arsenic sulfosalt gillulyite

Multi-element two-dimensional (2D) materials hold great promise in the context of tailoring the physical and chemical properties of the materials via stoichiometric engineering. However, the rational and controllable synthesis of complex 2D materials remains a challenge. Herein, we demonstrate the preparation of large-area thin quaternary 2D material flakes via mechanical exfoliation from a naturally occurring bulk crystal named gillulyite. Furthermore, the anisotropic linear and nonlinear optical properties including anisotropic Raman scattering, linear dichroism, and anisotropic third-harmonic generation (THG) of the exfoliated gillulyite flakes are investigated. The observed highly anisotropic optical properties originate from the reduced in-plane crystal symmetry. Additionally, the third-order nonlinear susceptibility of gillulyite crystal is retrieved from the measured thickness-dependent THG emission. We anticipate that the demonstrated strong anisotropic linear and nonlinear optical responses of gillulyite crystal will facilitate the better understanding of light-matter interaction in quaternary 2D materials and its implications in technological innovations such as photodetectors, frequency modulators, nonlinear optical signal processors, and solar cell applications.

Polarization-dependent optical responses in natural 2D layered mineral teallite

Multi-element layered materials enable the use of stoichiometric variation to engineer their optical responses at subwavelength scale. In this regard, naturally occurring van der Waals minerals allow us to harness a wide range of chemical compositions, crystal structures and lattice symmetries for layered materials under atomically thin limit. Recently, one type of naturally occurring sulfide mineral, ternary teallite has attained significant interest in the context of thermoelectric, optoelectronic, and photovoltaic applications, but understanding of light-matter interactions in such ternary teallite crystals is scarcely available. Herein, polarization-dependent linear and nonlinear optical responses in mechanically exfoliated teallite crystals are investigated including anisotropic Raman modes, wavelength-dependent linear dichroism, optical band gap evolution, and anisotropic third-harmonic generation (THG). Furthermore, the third-order nonlinear susceptibility of teallite crystal is estimated using the thickness-dependent THG emission process. We anticipate that our findings will open the avenue to a better understanding of the tailored light-matter interactions in complex multi-element layered materials and their implications in optical sensors, frequency modulators, integrated photonic circuits, and other nonlinear signal processing applications.