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Song S, Rahaman M, Jariwala D. Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics? ACS NANO 2024; 18:10955-10978. [PMID: 38625032 DOI: 10.1021/acsnano.3c12938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.
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Affiliation(s)
- Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Mahfujur Rahaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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Botella R, Kistanov AA, Cao W. Swarm Smart Meta-Estimator for 2D/2D Heterostructure Design. J Chem Inf Model 2023; 63:6212-6223. [PMID: 37796976 PMCID: PMC10598791 DOI: 10.1021/acs.jcim.3c01509] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Indexed: 10/07/2023]
Abstract
Two-dimensional (2D) semiconductors are central to many scientific fields. The combination of two semiconductors (heterostructure) is a good way to lift many technological deadlocks. Although ab initio calculations are useful to study physical properties of these composites, their application is limited to few heterostructure samples. Herein, we use machine learning to predict key characteristics of 2D materials to select relevant candidates for heterostructure building. First, a label space is created with engineered labels relating to atomic charge and ion spatial distribution. Then, a meta-estimator is designed to predict label values of heterostructure samples having a defined band alignment (descriptor). To this end, independently trained k-nearest neighbors (KNN) regression models are combined to boost the regression. Then, swarm intelligence principles are used, along with the boosted estimator's results, to further refine the regression. This new "swarm smart" algorithm is a powerful and versatile tool to select, among experimentally existing, computationally studied, and not yet discovered van der Waals heterostructures, the most likely candidate materials to face the scientific challenges ahead.
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Affiliation(s)
- Romain Botella
- Nano and Molecular Systems Research
Unit, Faculty of Science, University of
Oulu, FIN 90014 Oulu, Finland
| | - Andrey A. Kistanov
- Nano and Molecular Systems Research
Unit, Faculty of Science, University of
Oulu, FIN 90014 Oulu, Finland
| | - Wei Cao
- Nano and Molecular Systems Research
Unit, Faculty of Science, University of
Oulu, FIN 90014 Oulu, Finland
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Rybak M, Woźniak T, Birowska M, Dybała F, Segura A, Kapcia KJ, Scharoch P, Kudrawiec R. Stress-Tuned Optical Transitions in Layered 1T-MX 2 (M=Hf, Zr, Sn; X=S, Se) Crystals. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3433. [PMID: 36234562 PMCID: PMC9565717 DOI: 10.3390/nano12193433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 09/23/2022] [Accepted: 09/24/2022] [Indexed: 06/16/2023]
Abstract
Optical measurements under externally applied stresses allow us to study the materials' electronic structure by comparing the pressure evolution of optical peaks obtained from experiments and theoretical calculations. We examine the stress-induced changes in electronic structure for the thermodynamically stable 1T polytype of selected MX2 compounds (M=Hf, Zr, Sn; X=S, Se), using the density functional theory. We demonstrate that considered 1T-MX2 materials are semiconducting with indirect character of the band gap, irrespective to the employed pressure as predicted using modified Becke-Johnson potential. We determine energies of direct interband transitions between bands extrema and in band-nesting regions close to Fermi level. Generally, the studied transitions are optically active, exhibiting in-plane polarization of light. Finally, we quantify their energy trends under external hydrostatic, uniaxial, and biaxial stresses by determining the linear pressure coefficients. Generally, negative pressure coefficients are obtained implying the narrowing of the band gap. The semiconducting-to-metal transition are predicted under hydrostatic pressure. We discuss these trends in terms of orbital composition of involved electronic bands. In addition, we demonstrate that the measured pressure coefficients of HfS2 and HfSe2 absorption edges are in perfect agreement with our predictions. Comprehensive and easy-to-interpret tables containing the optical features are provided to form the basis for assignation of optical peaks in future measurements.
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Affiliation(s)
- Miłosz Rybak
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Tomasz Woźniak
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Magdalena Birowska
- Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Pasteura St. 5, 02-093 Warsaw, Poland
| | - Filip Dybała
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Alfredo Segura
- Departamento de Física Aplicada-ICMUV, Malta-Consolider Team, Universitat de València, 46100 Burjassot, Spain
| | - Konrad J. Kapcia
- Institute of Spintronics and Quantum Information, Faculty of Physics, Adam Mickiewicz University in Poznań, ul. Uniwersytetu Poznańskiego 2, 61-614 Poznań, Poland
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, Germany
| | - Paweł Scharoch
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Robert Kudrawiec
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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