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Komatsu H, Hosoda N, Ikuno T. Self-Powered Dye-Sensitized Solar-Cell-Based Synaptic Devices for Multi-Scale Time-Series Data Processing in Physical Reservoir Computing. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39466668 DOI: 10.1021/acsami.4c11061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/30/2024]
Abstract
Physical reservoir computing (PRC) using synaptic devices has attracted attention as a promising edge artificial intelligence device. To handle time-series data on various time scales, it is necessary to fabricate devices with the desired time scale. In this study, we fabricated a dye-sensitized solar-cell-based synaptic device with controllable time constants by changing the light intensity. This device showed synaptic features, such as paired-pulse facilitation and paired-pulse depression, in response to light intensity. Moreover, we found that the high computational performance of the time-series data processing task was achieved by changing the light intensity, even when the input pulse width was varied. In addition, the fabricated device can be used for motion recognition tasks. This study paves the way for realizing multiple time-scale PRC.
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Affiliation(s)
- Hiroaki Komatsu
- Department of Applied Electronics, Graduate School of Advanced Engineering, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
| | - Norika Hosoda
- Department of Applied Electronics, Graduate School of Advanced Engineering, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
| | - Takashi Ikuno
- Department of Applied Electronics, Graduate School of Advanced Engineering, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
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2
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Namiki W, Nishioka D, Tsuchiya T, Higuchi T, Terabe K. Magnetization Vector Rotation Reservoir Computing Operated by Redox Mechanism. NANO LETTERS 2024; 24:4383-4392. [PMID: 38513213 DOI: 10.1021/acs.nanolett.3c05029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Physical reservoir computing is a promising way to develop efficient artificial intelligence using physical devices exhibiting nonlinear dynamics. Although magnetic materials have advantages in miniaturization, the need for a magnetic field and large electric current results in high electric power consumption and a complex device structure. To resolve these issues, we propose a redox-based physical reservoir utilizing the planar Hall effect and anisotropic magnetoresistance, which are phenomena described by different nonlinear functions of the magnetization vector that do not need a magnetic field to be applied. The expressive power of this reservoir based on a compact all-solid-state redox transistor is higher than the previous physical reservoir. The normalized mean square error of the reservoir on a second-order nonlinear equation task was 1.69 × 10-3, which is lower than that of a memristor array (3.13 × 10-3) even though the number of reservoir nodes was fewer than half that of the memristor array.
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Affiliation(s)
- Wataru Namiki
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Daiki Nishioka
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Takashi Tsuchiya
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Kazuya Terabe
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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3
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Nishioka D, Shingaya Y, Tsuchiya T, Higuchi T, Terabe K. Few- and single-molecule reservoir computing experimentally demonstrated with surface-enhanced Raman scattering and ion gating. SCIENCE ADVANCES 2024; 10:eadk6438. [PMID: 38416821 PMCID: PMC10901377 DOI: 10.1126/sciadv.adk6438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2023] [Accepted: 01/23/2024] [Indexed: 03/01/2024]
Abstract
Molecule-based reservoir computing (RC) is promising for achieving low power consumption neuromorphic computing, although the information-processing capability of small numbers of molecules is not clear. Here, we report a few- and single-molecule RC that uses the molecular vibration dynamics in the para-mercaptobenzoic acid (pMBA) detected by surface-enhanced Raman scattering (SERS) with tungsten oxide nanorod/silver nanoparticles. The Raman signals of the pMBA molecules, adsorbed at the SERS active site of the nanorod, were reversibly perturbated by the application of voltage-induced local pH changes near the molecules, and then used to perform time-series analysis tasks. Despite the small number of molecules used, our system achieved good performance, including >95% accuracy in various nonlinear waveform transformations, 94.3% accuracy in solving a second-order nonlinear dynamic system, and a prediction error of 25.0 milligrams per deciliter in a 15-minute-ahead blood glucose level prediction. Our work provides a concept of few-molecular computing with practical computation capabilities.
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Affiliation(s)
- Daiki Nishioka
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Yoshitaka Shingaya
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Tsuchiya
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Kazuya Terabe
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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4
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Lai BR, Chen KT, Chaurasiya R, You SX, Hsu WD, Chen JS. Unveiling transient current response in bilayer oxide-based physical reservoirs for time-series data analysis. NANOSCALE 2024; 16:3061-3070. [PMID: 38240625 DOI: 10.1039/d3nr05401b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Physical reservoirs employed to map time-series data and analyze extracted features have attracted interest owing to their low training cost and mitigated interconnection complexity. This study reports a physical reservoir based on a bilayer oxide-based dynamic memristor. The proposed device exhibits a nonlinear current response and short-term memory (STM), satisfying the requirements of reservoir computing (RC). These characteristics are validated using a compact model to account for resistive switching (RS) via the dynamic evolution of the internal state variable and the relocation of oxygen vacancies. Mathematically, the transient current response can be quantitatively described according to a simple set of equations to correlate the theoretical framework with experimental results. Furthermore, the device shows significant reliability and ability to distinguish 4-bit inputs and four diverse neural firing patterns. Therefore, this work shows the feasibility of implementing physical reservoirs in hardware and advances the understanding of the dynamic response.
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Affiliation(s)
- Bo-Ru Lai
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Kuan-Ting Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Rajneesh Chaurasiya
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
- Department of Electronics and Communication Engineering, Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Chennai, India
| | - Song-Xian You
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Wen-Dung Hsu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
- Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan 70101, Taiwan
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Yamazaki Y, Kinoshita K. Photonic Physical Reservoir Computing with Tunable Relaxation Time Constant. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2304804. [PMID: 37984878 PMCID: PMC10797460 DOI: 10.1002/advs.202304804] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2023] [Revised: 10/27/2023] [Indexed: 11/22/2023]
Abstract
Recent years have witnessed a rising demand for edge computing, and there is a need for methods to decrease the computational cost while maintaining a high learning performance when processing information at arbitrary edges. Reservoir computing using physical dynamics has attracted significant attention. However, currently, the timescale of the input signals that can be processed by physical reservoirs is limited by the transient characteristics inherent to the selected physical system. This study used an Sn-doped In2 O3 /Nb-doped SrTiO3 junction to fabricate a memristor that could respond to both electrical and optical stimuli. The results show that the timescale of the transient current response of the device could be controlled over several orders of magnitude simply by applying a small voltage. The computational performance of the device as a physical reservoir is evaluated in an image classification task, demonstrating that the learning accuracy could be optimized by tuning the device to exhibit appropriate transient characteristics according to the timescale of the input signals. These results are expected to provide deeper insights into the photoconductive properties of strontium titanate, as well as support the physical implementation of computing systems.
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Affiliation(s)
- Yutaro Yamazaki
- Department of Applied PhysicsTokyo University of Science6–3–1 Niijuku, Katsushika‐kuTokyo125–8585Japan
| | - Kentaro Kinoshita
- Department of Applied PhysicsTokyo University of Science6–3–1 Niijuku, Katsushika‐kuTokyo125–8585Japan
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Sato D, Shima H, Matsuo T, Yonezawa M, Kinoshita K, Kobayashi M, Naitoh Y, Akinaga H, Miyamoto S, Nokami T, Itoh T. Characterization of Information-Transmitting Materials Produced in Ionic Liquid-based Neuromorphic Electrochemical Devices for Physical Reservoir Computing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:49712-49726. [PMID: 37815984 PMCID: PMC10614198 DOI: 10.1021/acsami.3c08638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Accepted: 09/12/2023] [Indexed: 10/12/2023]
Abstract
Device implementation of reservoir computing, which is expected to enable high-performance data processing in simple neural networks at a low computational cost, is an important technology to accelerate the use of artificial intelligence in the real-world edge computing domain. Here, we propose an ionic liquid-based physical reservoir device (IL-PRD), in which copper cations dissolved in an IL induce diverse electrochemical current responses. The origin of the electrochemical current from the IL-PRD was investigated spectroscopically in detail. After operating the device under various operating conditions, X-ray photoelectron spectroscopy of the IL-PRD revealed that electrochemical reactions involving Cu, Cu2O, Cu(OH)2, CuSx, and H2O occur at the Pt electrode/IL interface. These products are considered information transmission materials in IL-PRD similar to neurotransmitters in biological neurons. By introducing the Faradaic current components due to the electrochemical reactions of these materials into the output signal of IL-PRD, we succeeded in improving the time-series data processing performance of the nonlinear autoregressive moving average task. In addition, the information processing efficiency in machine learning to classify electrocardiogram signal waveforms was successfully improved by using the output current from IL-PRD. Optimizing the electrochemical reaction products of IL-PRD is expected to advance data processing technology in society.
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Affiliation(s)
- Dan Sato
- Device
Technology Research Institute, National
Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
- Department
of Applied Physics, Graduate School of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
| | - Hisashi Shima
- Device
Technology Research Institute, National
Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
| | - Takuma Matsuo
- Device
Technology Research Institute, National
Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
- Department
of Applied Physics, Graduate School of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
| | - Masaharu Yonezawa
- Device
Technology Research Institute, National
Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
- Department
of Applied Physics, Graduate School of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
| | - Kentaro Kinoshita
- Department
of Applied Physics, Graduate School of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
| | - Masakazu Kobayashi
- Department
of Applied Physics, Graduate School of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
- New
Value Creation Office, NAGASE & CO.,
LTD., Nihonbashi, Tokyo 103-8355, Japan
| | - Yasuhisa Naitoh
- Device
Technology Research Institute, National
Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
| | - Hiroyuki Akinaga
- Device
Technology Research Institute, National
Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
| | - Shunsuke Miyamoto
- Center
for Research on Green Sustainable Chemistry, Faculty of Engineering, Tottori University, Koyama, Tottori 680-8552, Japan
| | - Toshiki Nokami
- Center
for Research on Green Sustainable Chemistry, Faculty of Engineering, Tottori University, Koyama, Tottori 680-8552, Japan
| | - Toshiyuki Itoh
- Toyota
Physical and Chemical Research Institute, Nagakute, Aichi 480-1192, Japan
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Yamada R, Watanabe S, Tada H. Reservoir computing with the electrochemical formation and reduction of gold oxide in aqueous solutions with a three-electrode electrochemical setup. RSC Adv 2023; 13:24801-24804. [PMID: 37608968 PMCID: PMC10440635 DOI: 10.1039/d3ra04614a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 08/14/2023] [Indexed: 08/24/2023] Open
Abstract
Supervised classification of handwritten digits via physical reservoir computing (PRC) using electrochemistry with a three-electrode electrochemical setup was demonstrated. Short-term memory required for the PRC was realized for 3 bit pulse patterns by adjusting the formation/reduction ratio of gold oxides, showing a wide potential of electrochemistry as resources of PR devices.
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Affiliation(s)
- Ryo Yamada
- Division of Frontier Materials Science, Graduate School of Engineering Science, Osaka University Toyonaka Osaka 560-8531 Japan
| | - Shuto Watanabe
- Division of Frontier Materials Science, Graduate School of Engineering Science, Osaka University Toyonaka Osaka 560-8531 Japan
| | - Hirokazu Tada
- Division of Frontier Materials Science, Graduate School of Engineering Science, Osaka University Toyonaka Osaka 560-8531 Japan
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8
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Nishioka D, Tsuchiya T, Namiki W, Takayanagi M, Imura M, Koide Y, Higuchi T, Terabe K. Edge-of-chaos learning achieved by ion-electron-coupled dynamics in an ion-gating reservoir. SCIENCE ADVANCES 2022; 8:eade1156. [PMID: 36516242 PMCID: PMC9750142 DOI: 10.1126/sciadv.ade1156] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2022] [Accepted: 11/14/2022] [Indexed: 06/17/2023]
Abstract
Physical reservoir computing has recently been attracting attention for its ability to substantially reduce the computational resources required to process time series data. However, the physical reservoirs that have been reported to date have had insufficient computational capacity, and most of them have a large volume, which makes their practical application difficult. Here, we describe the development of a Li+ electrolyte-based ion-gating reservoir (IGR), with ion-electron-coupled dynamics, for use in high-performance physical reservoir computing. A variety of synaptic responses were obtained in response to past experience, which were stored as transient charge density patterns in an electric double layer, at the Li+ electrolyte/diamond interface. Performance for a second-order nonlinear dynamical equation task is one order of magnitude higher than memristor-based reservoirs. The edge-of-chaos state of the IGR enabled the best computational capacity. The IGR described here opens the way for high-performance and integrated neural network devices.
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Affiliation(s)
- Daiki Nishioka
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Takashi Tsuchiya
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Wataru Namiki
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Makoto Takayanagi
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Masataka Imura
- Research Center for Functional Materials, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Yasuo Koide
- Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Kazuya Terabe
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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