Design of effective self-powered SnS2/halide perovskite photo-detection system based on triboelectric nanogenerator by regarding circuit impedance

Self-powered triboelectric nanogenerator sensor for detecting humidity level and monitoring ethanol variation in a simulated exhalation environment

Respiration stands as a vital process reflecting physiological and pathological human health status. Exhaled breath analysis offers a facile, non-invasive, swift, and cost-effective approach for diagnosing and monitoring diseases by detecting concentration changes of specific biomarkers. In this study, we employed Polyethylene oxide/copper (I) oxide composite nanofibers (PCNFs), synthesized via the electrospinning method as the sensing material to measure ethanol levels (1-200 ppm) in an exhaled breath simulator environment. The integrated contact-separation triboelectric nanogenerator was utilized to power the self-powered PCNFs exhaled breath sensor. The PCNFs-based gas sensor demonstrates promising results with values of 0.9 and 3.2 for detecting 5 ppm and 200 ppm ethanol, respectively, in the presence of interfering gas at 90% relative humidity (RH). Notably, the sensor displayed remarkable ethanol selectivity, with ratios of 10:1 to methanol and 25:1 to acetone. Response and recovery times for 200 ppm ethanol at 90 RH% were rapid, at 2.7 s and 5.8 s, respectively. The PCNFs-based exhaled breath sensor demonstrated consistent and stable performance in practical conditions, showcasing its potential for integration into wearable devices. This self-powered breath sensor enabling continuous monitoring of lung cancer symptoms and facilitating compliance checks with legal alcohol consumption limits.

Flexible triboelectric nanogenerators of Au-g-C3N4/ZnO hierarchical nanostructures for machine learning enabled body movement detection

Here we report the development of triboelectric nanogenerator (TENG) based self-powered human motion detector with chemically developed Au-g-C3N4/ZnO based nanocomposite on common cellulose paper platform. Compared to bare g-C3N4, the nanocomposite in the form of hierarchical morphology is found to exhibit higher output voltage owing to the contribution of Au and ZnO in increasing the dielectric constant and surface roughness. While generating power ∼3.5μW cm-2and sensitivity ∼3.3 V N-1, the flexible TENG, is also functional under common biomechanical stimuli to operate as human body movement sensor. When attached to human body, the flexible TENG is found to be sensitive towards body movement as well as the frequency of movement. Finally upon attaching multiple TENG devices to human body, the nature of body movement has been traced precisely using machine learning (ML) techniques. The execution of the learning algorithms like artificial neural network and random forest classifier on the data generated from these multiple sensors can yield an accuracy of 99% and 100% respectively to predict body movement with great deal of precision. The exhibition of superior sensitivity and ML based biomechanical motion recognition accuracy by the hierarchical structure based flexible TENG sensor are the prime novelties of the work.

Vertically oriented SnS2 on MoS2 nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

Van der Waals heterostructures have great potential for the emerging self-powered photoelectrochemical photodetectors due to their outstanding photoelectric conversion capability and efficient interfacial carrier transportation. By considering the band alignment, structural design, and growth optimization, the heterostructures of vertically oriented SnS₂ with different densities on MoS₂ nanosheets are designed and fabricated using a two-step epitaxial growth method. Compared with SnS₂, MoS₂, and low density-vertical SnS₂/MoS₂ heterostructure, the high density-vertical SnS₂/MoS₂ heterostructure exhibits largely enhanced self-powered photodetection performances, such as a giant photocurrent density (∼932.8 μA cm^-2), an excellent photoresponsivity (4.66 mA W^-1), and an ultrafast response/recovery time (3.6/6.4 ms) in the ultraviolet-visible range. This impressive enhancement of high density-vertical SnS₂/MoS₂ photodetectors is mainly ascribed to the essentially improved charge transfer and carrier transport of type-II band alignment heterostructures and the efficient light absorption from the unique light-trapping structure. In addition, the photoelectrocatalytic water splitting performance of the high density-vertical SnS₂/MoS₂ heterostructure also benefits from the type-II band alignment and the light-trapping structure. This work provides valuable inspiration for the design of two-dimensional optoelectronic and photoelectrochemical devices with improved performance by the morphology and heterostructure design.

Self-powered ultraviolet/visible photodetector based on graphene-oxide via triboelectric nanogenerators performing by finger tapping

Self-sufficient power sources provide a promising application of abundant electronic devices utilized in detection of ambient properties. Recently, triboelectric nanogenerators (TENGs) have been widely investigated to broaden the self-powered systems by converting the ambient mechanical agitations into electrical voltage and current. Graphene oxide (GO), not only for sensing applications but also as a brilliant energy-related nanomaterial, provides a wide range of controllable bandgap energies, as well as facile synthesis route. In this study, GO-based self-powered photodetectors have been fabricated by conflating the photosensitivity and triboelectric characteristics of freestanding GO paper. In this regard, photodetection via TENGs has been investigated in two forms of active and passive circuits for ultraviolet (UV) and visible illumination. The photodetector responsivity upon UV enhanced from 0.011 mA W^-1for conventional GO-photoresistors up to 13.41 mA W^-1by active photodetection setup. Moreover, applying the active-TENG improved the efficiency from 0.25% (in passive TENG) to 4.21%. Our findings demonstrate that active TENGs might enable materials with insignificant optical response to represent considerably higher light-sensitivity by means of synergizing the effect of TENG output changes with opto-electronical properties of desired layers.