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Wang CC, Lo AY, Cheng MC, Chang YS, Shih HC, Shieu FS, Tseng TH, Tsai HT. Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi 2Se 3 topological insulators. Sci Rep 2024; 14:195. [PMID: 38168147 PMCID: PMC10762253 DOI: 10.1038/s41598-023-50809-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Accepted: 12/26/2023] [Indexed: 01/05/2024] Open
Abstract
Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor deposition at 600 °C on a glass substrate, and then a-ITZO was deposited on the surface of the Bi2Se3 NPs via magnetron sputtering at room-temperature. The crystal structures of the a-ITZO/Bi2Se3 NPs were determined via X-ray diffraction spectroscopy and high-resolution transmission electron microscopy. The elemental vibration modes and binding energies were measured using Raman spectroscopy and X-ray photoelectron spectroscopy. The morphologies were examined using field-emission scanning electron microscopy. The electrical properties of the a-ITZO/Bi2Se3 NPs were evaluated using Hall effect measurements. The bulk carrier concentration of a-ITZO was not affected by the heterostructure with Bi2Se3. In the case of the Bi2Se3 heterostructure, the carrier mobility and conductivity of a-ITZO were increased by 263.6% and 281.4%, respectively, whereas the resistivity of a-ITZO was reduced by 73.57%. This indicates that Bi2Se3 significantly improves the electrical properties of a-ITZO through its heterostructure, expanding its potential applications in electronic and thermoelectric devices.
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Affiliation(s)
- Chih-Chiang Wang
- Department of Chemical and Materials Engineering, National Chin-Yi University of Technology, Taichung, 411030, Taiwan.
| | - An-Ya Lo
- Department of Chemical and Materials Engineering, National Chin-Yi University of Technology, Taichung, 411030, Taiwan
| | - Ming-Che Cheng
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan
| | - Yu-Sung Chang
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan
| | - Han-Chang Shih
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan.
- Department of Chemical and Materials Engineering, Chinese Culture University, Taipei, 11114, Taiwan.
| | - Fuh-Sheng Shieu
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan
| | - Tzu-Hsien Tseng
- Instrument Center, The Office of Research and Development, National Chung Hsing University, Taichung, 40227, Taiwan
| | - He-Ting Tsai
- Instrument Center, The Office of Research and Development, National Chung Hsing University, Taichung, 40227, Taiwan
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