1
|
Han C, Fan S, Li C, Chen LQ, Yang T, Qiu CW. Nonlocal Acoustic Moiré Hyperbolic Metasurfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311350. [PMID: 38221798 DOI: 10.1002/adma.202311350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2023] [Revised: 12/17/2023] [Indexed: 01/16/2024]
Abstract
The discovery of the topological transition in twisted bilayer (tBL) materials has attracted considerable attention in nano-optics. In the analogue of acoustics, however, no such topological transition has been found due to the inherent nondirectional scalar property of acoustic pressure. In this work, by using a theory-based nonlocal anisotropic design, the in-plane acoustic pressure is transformed into a spatially distributed vector field using twisted multilayer metasurfaces. So-called "acoustic magic angle"-related acoustic phenomena occur, such as nonlocal polariton hybridization and the topological Lifshitz transition. The dispersion becomes flat at the acoustic magic angle, enabling polarized excitations to propagate in a single direction. Moreover, the acoustic topological transition (from hyperbolic to elliptic dispersion) is experimentally observed for the first time as the twist angle continuously changes. This unique characteristic facilitates low-loss tunable polariton hybridization at the subwavelength scale. A twisted trilayer acoustic metasurface is also experimentally demonstrated, and more possibilities for manipulating acoustic waves are found. These discoveries not only enrich the concepts of moiré physics and topological acoustics but also provide a complete framework of theory and methodologies for explaining the phenomena that are observed.
Collapse
Affiliation(s)
- Chenglin Han
- School of Mechanical Engineering and Automation, Northeastern University, Shenyang, 110819, China
| | - Shida Fan
- School of Mechanical Engineering and Automation, Northeastern University, Shenyang, 110819, China
| | - Changyou Li
- School of Mechanical Engineering and Automation, Northeastern University, Shenyang, 110819, China
| | - Li-Qun Chen
- School of Science, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Tianzhi Yang
- School of Mechanical Engineering and Automation, Northeastern University, Shenyang, 110819, China
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| |
Collapse
|
2
|
Zhou Z, Song R, Xu J, Ni X, Dang Z, Zhao Z, Quan J, Dong S, Hu W, Huang D, Chen K, Wang Z, Cheng X, Raschke MB, Alù A, Jiang T. Gate-Tuning Hybrid Polaritons in Twisted α-MoO 3/Graphene Heterostructures. NANO LETTERS 2023. [PMID: 37948605 DOI: 10.1021/acs.nanolett.3c03769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Modulating anisotropic phonon polaritons (PhPs) can open new avenues in infrared nanophotonics. Promising PhP dispersion engineering through polariton hybridization has been demonstrated by coupling gated graphene to single-layer α-MoO3. However, the mechanism underlying the gate-dependent modulation of hybridization has remained elusive. Here, using IR nanospectroscopic imaging, we demonstrate active modulation of the optical response function, quantified in measurements of gate dependence of wavelength, amplitude, and dissipation rate of the hybrid plasmon-phonon polaritons (HPPPs) in both single-layer and twisted bilayer α-MoO3/graphene heterostructures. Intriguingly, while graphene doping leads to a monotonic increase in HPPP wavelength, amplitude and dissipation rate show transition from an initially anticorrelated decrease to a correlated increase. We attribute this behavior to the intricate interplay of gate-dependent components of the HPPP complex momentum. Our results provide the foundation for active polariton control of integrated α-MoO3 nanophotonics devices.
Collapse
Affiliation(s)
- Zhou Zhou
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China
| | - Renkang Song
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Junbo Xu
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Xiang Ni
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
- School of Physics, Central South University, Changsha, Hunan 410083, China
| | - Zijia Dang
- Center for the Physics of Low-Dimensional Materials, School of Physics and Electronics, School of Future Technology, Henan University, Kaifeng 475004, China
| | - Zhichen Zhao
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Jiamin Quan
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
- Physics Program, Graduate Center, City University of New York, New York, New York 10026, United States
| | - Siyu Dong
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Di Huang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Ke Chen
- Center for the Physics of Low-Dimensional Materials, School of Physics and Electronics, School of Future Technology, Henan University, Kaifeng 475004, China
| | - Zhanshan Wang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China
| | - Xinbin Cheng
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China
| | - Markus B Raschke
- Department of Physics and JILA, University of Colorado, Boulder, Colorado 80309, United States
| | - Andrea Alù
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
- Physics Program, Graduate Center, City University of New York, New York, New York 10026, United States
| | - Tao Jiang
- MOE Key Laboratory of Advanced Micro-Structured Materials, Shanghai Frontiers Science Center of Digital Optics, Institute of Precision Optical Engineering, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| |
Collapse
|
3
|
Huang W, Folland TG, Sun F, Zheng Z, Xu N, Xing Q, Jiang J, Chen H, Caldwell JD, Yan H, Deng S. In-plane hyperbolic polariton tuners in terahertz and long-wave infrared regimes. Nat Commun 2023; 14:2716. [PMID: 37169788 PMCID: PMC10175486 DOI: 10.1038/s41467-023-38214-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Accepted: 04/21/2023] [Indexed: 05/13/2023] Open
Abstract
One of the main bottlenecks in the development of terahertz (THz) and long-wave infrared (LWIR) technologies is the limited intrinsic response of traditional materials. Hyperbolic phonon polaritons (HPhPs) of van der Waals semiconductors couple strongly with THz and LWIR radiation. However, the mismatch of photon - polariton momentum makes far-field excitation of HPhPs challenging. Here, we propose an In-Plane Hyperbolic Polariton Tuner that is based on patterning van der Waals semiconductors, here α-MoO3, into ribbon arrays. We demonstrate that such tuners respond directly to far-field excitation and give rise to LWIR and THz resonances with high quality factors up to 300, which are strongly dependent on in-plane hyperbolic polariton of the patterned α-MoO3. We further show that with this tuner, intensity regulation of reflected and transmitted electromagnetic waves, as well as their wavelength and polarization selection can be achieved. Our results can help the development of THz and LWIR miniaturized devices.
Collapse
Affiliation(s)
- Wuchao Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Thomas G Folland
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37235, USA
- Department of Physics and Astronomy, The University of Iowa, Iowa City, IA, 52245, USA
| | - Fengsheng Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zebo Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
- The Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics, Department of Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, Shanghai, 200433, China
| | - Jingyao Jiang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China.
| | - Joshua D Caldwell
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37235, USA.
| | - Hugen Yan
- State Key Laboratory of Surface Physics, Department of Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), Fudan University, Shanghai, 200433, China.
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China.
| |
Collapse
|