1
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Ruf L, Scheer E, Di Bernardo A. High-Performance Gate-Controlled Superconducting Switches: Large Output Voltage and Reproducibility. ACS NANO 2024; 18:20600-20610. [PMID: 39056519 PMCID: PMC11308776 DOI: 10.1021/acsnano.4c05910] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2024] [Revised: 07/10/2024] [Accepted: 07/17/2024] [Indexed: 07/28/2024]
Abstract
Logic circuits consist of devices that can be controlled between two distinct states. The recent demonstration that a superconducting current flowing in a constriction can be controlled via a gate voltage (VG)─gate-controlled supercurrent (GCS)─can lead to superconducting logic with better performance than existing logics. However, before such logic is developed, high reproducibility in the functioning of GCS devices and optimization of their performance must be achieved. Here, we report an investigation of gated Nb devices showing GCS with very high reproducibility. Based on the investigation of a statistically significant number of devices, we demonstrate that the GCS is independent of the constriction width, in contrast with previous reports, and confirm a strong correlation between the GCS and the leakage current (Ileak) induced by VG. We also achieve a voltage output in our devices larger than the typical values reported to date by at least 1 order of magnitude, which is relevant for the future interconnection of devices, and show that Ileak can be used as a tool to modulate the operational VG of devices on a SiO2 substrates. These results altogether represent an important step forward toward the optimization of reproducibility and performance of GCS devices, and the future development of a GCS-based logic.
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Affiliation(s)
- Leon Ruf
- Department of Physics, University of Konstanz, Universitätsstraße 10, 78464 Konstanz, Germany
| | - Elke Scheer
- Department of Physics, University of Konstanz, Universitätsstraße 10, 78464 Konstanz, Germany
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2
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Cheng G, Lin MH, Chen HY, Wang D, Wang Z, Qin W, Zhang Z, Zeng C. Reversible modulation of superconductivity in thin-film NbSe 2 via plasmon coupling. Nat Commun 2024; 15:6037. [PMID: 39019892 PMCID: PMC11255238 DOI: 10.1038/s41467-024-50452-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 07/10/2024] [Indexed: 07/19/2024] Open
Abstract
In recent years, lightwave has stood out as an ultrafast, non-contact control knob for developing compact superconducting circuitry. However, the modulation efficiency is limited by the low photoresponse of superconductors. Plasmons, with the advantages of strong light-matter interaction, present a promising route to overcome the limitations. Here we achieve effective modulation of superconductivity in thin-film NbSe2 via near-field coupling to plasmons in gold nanoparticles. Upon resonant plasmon excitation, the superconductivity of NbSe2 is substantially suppressed. The modulation factor exceeds 40% at a photon flux of 9.36 × 1013 s-1mm-2, and the effect is significantly diminished for thicker NbSe2 samples. Our observations can be theoretically interpreted by invoking the non-equilibrium electron distribution in NbSe2 driven by the plasmon-associated evanescent field. Finally, a reversible plasmon-driven superconducting switch is realized in this system. These findings highlight plasmonic tailoring of quantum states as an innovative strategy for superconducting electronics.
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Affiliation(s)
- Guanghui Cheng
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, China.
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, Japan.
| | | | | | - Dongli Wang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
| | - Zheyan Wang
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, China
| | - Wei Qin
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, China.
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, Hefei, China
| | - Changgan Zeng
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, Hefei, China.
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3
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Ryu Y, Jeong J, Suh J, Kim J, Choi H, Cha J. Utilizing Gate-Controlled Supercurrent for All-Metallic Tunable Superconducting Microwave Resonators. NANO LETTERS 2024; 24:1223-1230. [PMID: 38232153 DOI: 10.1021/acs.nanolett.3c04080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
Hybridizing a microwave mode with a quantum state requires precise frequency matching of a superconducting microwave resonator and the corresponding quantum object. However, fabrication always brings imperfections in geometry and material properties, causing deviations from the desired operating frequencies. An effective and universal strategy for their resonant coupling is to tune the frequency of a resonator, as quantum states like phonons are hardly tunable. Here, we demonstrate gate-tunable, titanium-nitride (TiN)-based superconducting resonators by implementing a nanowire inductor whose kinetic inductance is tuned via the gate-controlled supercurrent (GCS) effect. We investigate their responses for different gate biases and observe 4% (∼150 MHz) frequency tuning with decreasing internal quality factors. We also perform temperature-controlled experiments to support phonon-related mechanisms in the GCS effect and the resonance tuning. The GCS effect-based method proposed in this study provides an effective route for locally tunable resonators that can be employed in various hybrid quantum devices.
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Affiliation(s)
- Younghun Ryu
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
| | - Jinhoon Jeong
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
| | - Junho Suh
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
| | - Jihwan Kim
- Agency For Defense Development (ADD), Daejeon 34186, South Korea
| | - Hyoungsoon Choi
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
- Graduate School of Quantum Science and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
| | - Jinwoong Cha
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
- Graduate School of Quantum Science and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
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4
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Yu S, Chen L, Pan Y, Wang Y, Zhang D, Wu G, Fan X, Liu X, Wu L, Zhang L, Peng W, Ren J, Wang Z. Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction. NANO LETTERS 2023; 23:8043-8049. [PMID: 37592211 DOI: 10.1021/acs.nanolett.3c02015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/19/2023]
Abstract
Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned by using a gate voltage (Vg). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nanobridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing Vg. The critical gate voltage was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned by using Vg in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels.
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Affiliation(s)
- Shujie Yu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Chen
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Yinping Pan
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Yue Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Denghui Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Guangting Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xinxin Fan
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoyu Liu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Ling Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Lu Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Peng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Ren
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China
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5
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Elalaily T, Berke M, Kedves M, Fülöp G, Scherübl Z, Kanne T, Nygård J, Makk P, Csonka S. Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires. ACS NANO 2023; 17:5528-5535. [PMID: 36912466 PMCID: PMC10062030 DOI: 10.1021/acsnano.2c10877] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Accepted: 03/08/2023] [Indexed: 06/18/2023]
Abstract
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.
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Affiliation(s)
- Tosson Elalaily
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- Department
of Physics, Faculty of Science, Tanta University, Al-Geish St., 31527 Tanta, Gharbia, Egypt
| | - Martin Berke
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Máté Kedves
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Correlated van der Waals Structures Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Gergő Fülöp
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Zoltán Scherübl
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Thomas Kanne
- Center
for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100, Copenhagen, Denmark
| | - Jesper Nygård
- Center
for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100, Copenhagen, Denmark
| | - Péter Makk
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Correlated van der Waals Structures Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Szabolcs Csonka
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
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6
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De Simoni G, Battisti S, Ligato N, Mercaldo MT, Cuoco M, Giazotto F. Gate Control of the Current-Flux Relation of a Josephson Quantum Interferometer Based on Proximitized Metallic Nanojuntions. ACS APPLIED ELECTRONIC MATERIALS 2021; 3:3927-3935. [PMID: 36247495 PMCID: PMC9555709 DOI: 10.1021/acsaelm.1c00508] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximity Cu mesoscopic weak links. This specific kind of metallic weak links behaves analogously to genuine superconducting metals in terms of the response to electrostatic gating and provides a good performance in terms of current-modulation visibility. We show that through the application of a static gate voltage we can modify the interferometer current-flux relation in a fashion that seems compatible with the introduction of π-channels within the gated weak link. Our results suggest that the microscopic mechanism at the origin of the suppression of the switching current in the interferometer is apparently phase coherent, resulting in an overall damping of the superconducting phase rigidity. We finally tackle the performance of the interferometer in terms of responsivity to magnetic flux variations in the dissipative regime and discuss the practical relevance of gated proximity-based all-metallic SQUIDs for magnetometry at the nanoscale.
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Affiliation(s)
- Giorgio De Simoni
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa, Italy
| | - Sebastiano Battisti
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa, Italy
- Department
of Physics “E. Fermi”, Universitá
di Pisa, Largo Pontecorvo
3, I-56127 Pisa, Italy
| | - Nadia Ligato
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa, Italy
| | - Maria Teresa Mercaldo
- Dipartimento
di Fisica “E. R. Caianiello”, Universitá di Salerno, Fisciano, Salerno IT-84084, Italy
| | | | - Francesco Giazotto
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa, Italy
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