Direct optical characterization of graphene growth and domains on growth substrates

Ultra-thin proton conducting carrier layers for scalable integration of atomically thin 2D materials with proton exchange polymers for next-generation PEMs

Scalable approaches for synthesis and integration of proton selective atomically thin 2D materials with proton conducting polymers can enable next-generation proton exchange membranes (PEMs) with minimal crossover of reactants or undesired species while maintaining adequately high proton conductance for practical applications. Here, we systematically investigate facile and scalable approaches to interface monolayer graphene synthesized via scalable chemical vapor deposition (CVD) on Cu foil with the most widely used proton exchange polymer Nafion 211 (N211, ∼25 μm thick film) via (i) spin-coating a ∼700 nm thin Nafion carrier layer to transfer graphene (spin + scoop), (ii) casting a Nafion film and cold pressing (cold press), and (iii) hot pressing (hot press) while minimizing micron-scale defects to <0.3% area. Interfacing CVD graphene on Cu with N211 via cold press or hot press and subsequent removal of Cu via etching results in ∼50% lower areal proton conductance compared to membranes fabricated via the spin + scoop method. Notably, the areal proton conductance can be recovered by soaking the hot and cold press membranes in 0.1 M HCl, without significant damage to graphene. We rationalize our finding by the significantly smaller reservoir for cation uptake from Cu etching for the ∼700 nm thin carrier Nafion layer used for spin + scoop transfer compared to the ∼25 μm thick N211 film for hot and cold pressing. Finally, we demonstrate performance in H2 fuel cells with power densities of ∼0.23 W cm-2 and up to ∼41-54% reduction in H2 crossover for the N211|G|N211 sandwich membranes compared to the control N211|N211 indicating potential for our approach in enabling advanced PEMs for fuel cells, redox-flow batteries, isotope separations and beyond.

Kinetic Control of Angstrom-Scale Porosity in 2D Lattices for Direct Scalable Synthesis of Atomically Thin Proton Exchange Membranes

Angstrom-scale pores introduced into atomically thin 2D materials offer transformative advances for proton exchange membranes in several energy applications. Here, we show that facile kinetic control of scalable chemical vapor deposition (CVD) can allow for direct formation of angstrom-scale proton-selective pores in monolayer graphene with significant hindrance to even small, hydrated ions (K⁺ diameter ∼6.6 Å) and gas molecules (H₂ kinetic diameter ∼2.9 Å). We demonstrate centimeter-scale Nafion|Graphene|Nafion membranes with proton conductance ∼3.3-3.8 S cm^-2 (graphene ∼12.7-24.6 S cm^-2) and H⁺/K⁺ selectivity ∼6.2-44.2 with liquid electrolytes. The same membranes show proton conductance ∼4.6-4.8 S cm^-2 (graphene ∼39.9-57.5 S cm^-2) and extremely low H₂ crossover ∼1.7 × 10^-1 - 2.2 × 10^-1 mA cm^-2 (∼0.4 V, ∼25 °C) with H₂ gas feed. We rationalize our findings via a resistance-based transport model and introduce a stacking approach that leverages combinatorial effects of interdefect distance and interlayer transport to allow for Nafion|Graphene|Graphene|Nafion membranes with H⁺/K⁺ selectivity ∼86.1 (at 1 M) and record low H₂ crossover current density ∼2.5 × 10^-2 mA cm^-2, up to ∼90% lower than state-of-the-art ionomer Nafion membranes ∼2.7 × 10^-1 mA cm^-2 under identical conditions, while still maintaining proton conductance ∼4.2 S cm^-2 (graphene stack ∼20.8 S cm^-2) comparable to that for Nafion of ∼5.2 S cm^-2. Our experimental insights enable functional atomically thin high flux proton exchange membranes with minimal crossover.

Predicting Graphene Growth on Cu: Universal Kinetic Growth Model and Its Experimental Verification

The kinetics of the chemical vapor deposition (CVD) of graphene on Cu in CH₄ + H₂ were investigated by monitoring the graphene flake size as a function of CVD growth time. A growth model was set up which relates the CVD parameters to the mass action constant Q_exp of the methane decomposition reaction toward graphene at a given temperature T. Graphene growth was shown to proceed from pre-equilibrated adsorbed carbon (C_ad) within a wide CVD parameter range. The model not only leads to the correct scaling relation of the growth kinetics but quantitatively determines how far the CVD parameters deviate from thermal equilibrium and correctly predicts the absolute flake size increase per time. Fitting experimental data delivers the energy barrier for carbon detachment from the graphene island edge (E_det = 4.7 ± 0.3 eV) and the methane decomposition entropy toward C_ad on Cu (Δ_decS° = 260 ± 20 J mol^-1 K^-1). The latter value is used to estimate the vanishingly small C_ad equilibrium concentration of 3 × 10^-10 monolayers at 1045 °C. The universal validity of the model is proven by comparison with literature data providing the correct order of magnitude growth velocities up to 1000 μm/h. The performed reactor experiments deliver data that match the predicted flake growth velocity with a precision of about 50%. The obtained results can be used to calibrate any hot wall CVD reactor setup for the methane decomposition reaction toward graphene on Cu. The description can be directly applied for any hydrocarbon in the gas feed, and the technique can be easily applied for other catalytic support surfaces.

Deterministic synthesis of Cu9S5 flakes assisted by single-layer graphene arrays

The employment of two-dimensional materials, as growth substrates or buffer layers, enables the epitaxial growth of layered materials with different crystalline symmetries with a preferential crystalline orientation and the synthesis of heterostructures with a large lattice constant mismatch. In this work, we employ single crystalline graphene to modify the sulfurization dynamics of copper foil for the deterministic synthesis of large-area Cu₉S₅ crystals. Molecular dynamics simulations using the Reax force-field are used to mimic the sulfurization process of a series of different atomistic systems specifically built to understand the role of graphene during the sulphur atom attack over the Cu(111) surface. Cu₉S₅ flakes show a flat morphology with an average lateral size of hundreds of micrometers. Cu₉S₅ presents a direct band-gap of 2.5 eV evaluated with light absorption and light emission spectroscopies. Electrical characterization shows that the Cu₉S₅ crystals present high p-type doping with a hole mobility of 2 cm² V^-1 s^-1.

Batch production of uniform graphene films via controlling gas-phase dynamics in confined space

Batch production of continuous and uniform graphene films is critical for the application of graphene. Chemical vapor deposition (CVD) has shown great promise for mass producing high-quality graphene films. However, the critical factors affected the uniformity of graphene films during the batch production need to be further studied. Herein, we propose a method for batch production of uniform graphene films by controlling the gaseous carbon source to be uniformly distributed near the substrate surface. By designing the growth space of graphene into a rectangular channel structure, we adjusted the velocity of feedstock gas flow to be uniformly distributed in the channel, which is critical for uniform graphene growth. The monolayer graphene film grown inside the rectangular channel structure shows high uniformity with average sheet resistance of 345 Ω sq^-1 without doping. The experimental and simulation results show that the placement of the substrates during batch growth of graphene films will greatly affect the distribution of gas-phase dynamics near the substrate surface and the growth process of graphene. Uniform graphene films with large-scale can be prepared in batches by adjusting the distribution of gas-phase dynamics.

Selective area oxidation of copper derived from chemical vapor deposited graphene microstructure

The barrier properties of graphene coating are highly correlated with its microstructure which is then determined by the chemical vapor deposition (CVD) growth history on metals. We demonstrate here an unrevealed selective area oxidation of copper under graphene, which is derived from the implicit-etching-controlled CVD growth mode of graphene. By charactering and analyzing the selective area patterns of Cu oxidation, an etched pattern trace with nano/microvoids during graphene growth has been proposed to account for this. Based on such selective oxidation of Cu, distributed galvanic corrosion will be triggered and proceed locally at the interface of graphene-Cu system to coalescence together under a continuous corrosion environment, eventually presenting a homogeneous oxidation of Cu and gradual decoupling of graphene-Cu system. This discovery will assist our understanding of the barrier properties of two-dimensional materials and can be extended to other applications related to quality monitoring of grown materials and defects-based chemical modifications.

Cu oxidation kinetics through graphene and its effect on the electrical properties of graphene

The oxidation kinetics of Cu through graphene were evaluated from the surface coverage of Cu oxide (F _ox) by varying the oxidation time (t _ox = 10-360 min) and temperature (T _ox = 180-240 °C) under an air environment. F _ox, as a function of time, well followed the Johnson-Mehl-Avrami-Kolmogorov equation; thus, the activation energy of Cu oxidation was estimated as 1.5 eV. Transmission electron microscopy studies revealed that Cu₂O formed on the top of the graphene at grain boundaries (G-GBs), indicating that Cu₂O growth was governed by the out-diffusion of Cu through G-GBs. Further, the effect of Cu oxidation on graphene quality was investigated by measuring the electrical properties of graphene after transferring. The variation of the sheet resistance (R _s) as a function of t _ox at all T _ox was converted into one curve as a function of F _ox. R _s of 250 Ω sq^-1 was constant, similar to that of as-grown graphene up to F _ox = 15%, and then increased with F _ox. The Hall measurement revealed that the carrier concentration remained constant in the entire range of F _ox, and R _s was solely related to the decrease in the Hall mobility. The variation in Hall mobility was examined according to the graphene percolation probability model, simulating electrical conduction on G-GBs during Cu₂O evolution. This model well explains the constant Hall mobility within F _ox = 15% and drastic F _ox degradation of 15-50% by the concept that the electrical conduction of graphene is disconnected by Cu₂O formation along with the G-GBs. Therefore, we systematically developed the oxidation kinetics of Cu through graphene and simultaneously examined the changes in the electrical properties of graphene.

Crystal Orientation Dependent Oxidation Modes at the Buried Graphene-Cu Interface

We combine spatially resolved scanning photoelectron spectroscopy with confocal Raman and optical microscopy to reveal how the oxidation of the buried graphene-Cu interface relates to the Cu crystallographic orientation. We analyze over 100 different graphene covered Cu (high and low index) orientations exposed to air for 2 years. Four general oxidation modes are observed that can be mapped as regions onto the polar plot of Cu surface orientations. These modes are (1) complete, (2) irregular, (3) inhibited, and (4) enhanced wrinkle interface oxidation. We present a comprehensive characterization of these modes, consider the underlying mechanisms, compare air and water mediated oxidation, and discuss this in the context of the diverse prior literature in this area. This understanding incorporates effects from across the wide parameter space of 2D material interface engineering, relevant to key challenges in their emerging applications, ranging from scalable transfer to electronic contacts, encapsulation, and corrosion protection.

Graphene-Subgrain-Defined Oxidation of Copper

The correlation between the crystal structure of chemical vapor deposition (CVD)-grown graphene and the crystal structure of the Cu growth substrate and their mutual effect on the oxidation of the underlying Cu are systematically explored. We report that natural oxygen or water intercalation along the graphene-Cu interface results in an orientation-dependent oxidation rate of the Cu surface, particularly noticeable for bicrystal graphene domains on the same copper grain, suggesting that the relative crystal orientation of subgrains determines the degree of Cu oxidation. Atomistic force field calculations support these observations, showing that graphene domains have preferential alignment with the Cu(111) with a smaller average height above the global Cu surface as compared to intermediate orientations, and that this is the origin of the heterogeneous oxidation rate of Cu. This work demonstrates that the natural oxidation resistance of Cu coated by graphene is highly dependent on the crystal orientation and lattice alignment of Cu and graphene, which is key information for engineering the interface configuration of the graphene-Cu system for specific functionalities in mechanical, anticorrosion, and electrical applications of CVD-grown graphene.

On the Dynamics of Intrinsic Carbon in Copper during the Annealing Phase of Chemical Vapor Deposition Growth of Graphene

In chemical vapor deposition (CVD) growth of graphene, intrinsic carbon in copper has been shown to play a role, especially during the nucleation phase. Here, we report experimental results on depletion of carbon from the bulk of a Cu foil to its surface at different hydrogen pressures, which explain new aspects of the interplay between hydrogen and intrinsic carbon prior to growth. We observed that rising H₂ pressure boosts carbon depletion to the surface, but at the same time, at elevated H₂ pressures, the graphitic film formed on the Cu surface is etched away at a faster rate. This effect led us to practice annealing of copper under high hydrogen pressure as an approach to decrease the total content of carbon in the copper foil and consequently reducing the nucleation density of graphene flakes. These results enhance our understanding about the role of H₂ in the CVD process and explain some of the inconsistencies among the earlier reports.

A novel graphene barrier against moisture by multiple stacking large-grain graphene

The moisture barrier properties of stacked graphene layers on Cu surfaces were investigated with the goal of improving the moisture barrier efficiency of single-layer graphene (SLG) for Cu metallization. SLG with large grain size were stacked on Cu surfaces coated with CVD-SLG to cover the grain-boundaries and defective areas of the underneath SLG film, which was confirmed to be oxidized by Raman spectroscopy measurements. To evaluate the humidity resistance of the graphene-coated Cu surfaces, temperature humidity storage (THS) testing was conducted under accelerated oxidation conditions (85 °C and 85% relative humidity) for 100 h. The color changes of the Cu surfaces during THS testing were observed by optical microscopy, while the oxidized Cu into Cu₂O and CuO was detected by X-ray photoelectron spectroscopy (XPS). The experimental results were accord with the results of first-principle simulation for the energetic barrier against water diffusion through the stacked graphene layers with different overlap. The results demonstrate the efficiency of SLG stacking approach against moisture for Cu metallization.

Toward Mass Production of CVD Graphene Films

Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.

Spontaneous Nucleation and Growth of Graphene Flakes on Copper Foil in the Absence of External Carbon Precursor in Chemical Vapor Deposition

In this work, we uncover a mechanism initiating spontaneous nucleation of graphene flakes on copper foil during the annealing phase of chemical vapor deposition (CVD) process. We demonstrate that the carbon in the bulk of copper foil is the source of nucleation. Although carbon solubility in a pure copper bulk is very low, excess carbon can be embedded inside the copper foil during the foil production process. Using time-of-flight secondary ion mass spectrometry, we measured the distribution profile of carbon atoms inside the copper foils and its variation by thermal annealing. We also studied the role of hydrogen in the segregation of carbon from the bulk to the surface of copper during annealing by scanning electron microscopy and Raman analysis. We found that carbon atoms diffuse out from the copper foil and accumulate on its surface during annealing in the presence of hydrogen. Consequently, graphene crystals can be nucleated and grown while "any external" carbon precursor was entirely avoided. To our knowledge, this is the first time that such growth has been demonstrated to take place. We believe that this finding brings a new insight into the initial nucleation of graphene in the CVD process and helps to achieve reproducible growth recipes.

Quantum interference mediated vertical molecular tunneling transistors

Molecular transistors operating in the quantum tunneling regime represent potential electronic building blocks for future integrated circuits. However, due to their complex fabrication processes and poor stability, traditional molecular transistors can only operate stably at cryogenic temperatures. Here, through a combined experimental and theoretical investigation, we demonstrate a new design of vertical molecular tunneling transistors, with stable switching operations up to room temperature, formed from cross-plane graphene/self-assembled monolayer (SAM)/gold heterostructures. We show that vertical molecular junctions formed from pseudo-p-bis((4-(acetylthio)phenyl)ethynyl)-p-[2,2]cyclophane (PCP) SAMs exhibit destructive quantum interference (QI) effects, which are absent in 1,4-bis(((4-acetylthio)phenyl)ethynyl)benzene (OPE3) SAMs. Consequently, the zero-bias differential conductance of the former is only about 2% of the latter, resulting in an enhanced on-off current ratio for (PCP) SAMs. Field-effect control is achieved using an ionic liquid gate, whose strong vertical electric field penetrates through the graphene layer and tunes the energy levels of the SAMs. The resulting on-off current ratio achieved in PCP SAMs can reach up to ~330, about one order of magnitude higher than that of OPE3 SAMs. The demonstration of molecular junctions with combined QI effect and gate tunability represents a critical step toward functional devices in future molecular-scale electronics.

In situ formed nanoparticle-assisted growth of large-size single crystalline h-BN on copper

h-BN is a widely used ultrathin insulator that can be synthesized in a controllable manner by chemical vapor deposition, similar to the growth of graphene. However, it is challenging to grow large-size single crystalline h-BN because of the ambiguous understanding of its growth mechanism. In this study, we propose a novel in situ formed nanoparticle-assisted growth strategy for large-size single crystalline h-BN growth on conventional polycrystalline copper. We found that the areal nucleation density of h-BN can be suppressed from ∼105 nuclei per mm2 to ∼102 nuclei per mm2 by the in situ formed nanoparticles that were introduced by pre-oxidation. Thus, single crystalline h-BN with lateral length of up to ∼102 μm was readily synthesized. Furthermore, for first time we discovered that the areal nucleation density of h-BN initially decreases and then increases under extreme annealing conditions, indicating that there is a competition-induced limit for suppressing the nucleation of h-BN on copper. This mechanism is universal for h-BN and graphene synthesis, which probably paves the way for large-size graphene/h-BN heterostructures synthesis in the future.

Fast, Noncontact, Wafer-Scale, Atomic Layer Resolved Imaging of Two-Dimensional Materials by Ellipsometric Contrast Micrography

Adequate characterization and quality control of atomically thin layered materials (2DM) has become a serious challenge particularly given the rapid advancements in their large area manufacturing and numerous emerging industrial applications with different substrate requirements. Here, we focus on ellipsometric contrast micrography (ECM), a fast intensity mode within spectroscopic imaging ellipsometry, and show that it can be effectively used for noncontact, large area characterization of 2DM to map coverage, layer number, defects and contamination. We demonstrate atomic layer resolved, quantitative mapping of chemical vapor deposited graphene layers on Si/SiO₂-wafers, but also on rough Cu catalyst foils, highlighting that ECM is applicable to all application relevant substrates. We discuss the optimization of ECM parameters for high throughput characterization. While the lateral resolution can be less than 1 μm, we particularly explore fast scanning and demonstrate imaging of a 4″ graphene wafer in 47 min at 10 μm lateral resolution, i.e., an imaging speed of 1.7 cm²/min. Furthermore, we show ECM of monolayer hexagonal BN (h-BN) and of h-BN/graphene bilayers, highlighting that ECM is applicable to a wide range of 2D layered structures that have previously been very challenging to characterize and thereby fills an important gap in 2DM metrology.

Hexagon Flower Quantum Dot-like Cu Pattern Formation during Low-Pressure Chemical Vapor Deposited Graphene Growth on a Liquid Cu/W Substrate

The H₂-induced etching of low-dimensional materials is of significant interest for controlled architecture design of crystalline materials at the micro- and nanoscale. This principle is applied to the thinnest crystalline etchant, graphene. In this study, by using a high H₂ concentration, the etched hexagonal holes of copper quantum dots (Cu QDs) were formed and embedded into the large-scale graphene region by low-pressure chemical vapor deposition on a liquid Cu/W surface. With this procedure, the hexagon flower-etched Cu patterns were formed in a H₂ environment at a higher melting temperature of Cu foil (1090 °C). The etching into the large-scale graphene was confirmed by optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman analysis. This first observation could be an intriguing case for the fundamental study of low-dimensional material etching during chemical vapor deposition growth; moreover, it may supply a simple approach for the controlled etching/growth. In addition, it could be significant in the fabrication of controllable etched structures based on Cu QD patterns for nanoelectronic devices as well as in-plane heterostructures on other low-dimensional materials in the near future.

Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure

The shape and density of grain boundary defects in graphene strongly influence its electrical, mechanical, and chemical properties. However, it is difficult and elaborate to gain information about the large-area distribution of grain boundary defects in graphene. An approach is presented that allows fast visualization of the large-area distribution of grain boundary-based line defects in chemical vapor deposition graphene after transferring graphene from the original copper substrate to a silicon dioxide surface. The approach is based on exposing graphene to vapor hydrofluoric acid (VHF), causing partial etching of the silicon dioxide underneath the graphene as VHF diffuses through graphene defects. The defects can then be identified using optical microscopy, scanning electron microscopy, or Raman spectroscopy. The methodology enables simple evaluation of the grain sizes in polycrystalline graphene and can therefore be a valuable procedure for optimizing graphene synthesis processes.

Oxide-assisted growth of scalable single-crystalline graphene with seamlessly stitched millimeter-sized domains on commercial copper foils

Chemical vapor deposition is used for the growth of scalable single-crystal graphene by seamlessly stitching millimeter-sized aligned hexagonal domains on different types of commercial Cu foils, without repeated substrate polishing and H₂annealing.

Different graphene layers to enhance or prevent corrosion of polycrystalline copper

Graphene was used as an anticorrosive coating for metals as it can effectively isolate the corrosion factors such as oxygen. However, we found that the anticorrosive and corrosive effects on metal surface were related to graphene layers and metal crystal faces. In this paper, we found that different layers of graphene had significantly different effects on the corrosion of polycrystalline copper during long-term storage under atmospheric conditions. Optical images and Raman spectra showed that single layer graphene (SLG)-coated copper had a higher degree of corrosion than bare copper. However, when covered with CVD in situ-grown bilayer graphene (BLG), the copper foil was effectively prevented from being etched as it exhibited a bright yellow color despite the differences in crystal faces. The surface potential differences measured by an electric force microscope (EFM) showed that a contact potential difference (V_CPD) between 30 and 40 mV existed between Cu/SLG and bare copper. The SLG-coated areas had a higher surface potential (SP), which meant that the (SLG)-coated copper was more prone to lose electrons to exhibit galvanic corrosion. The BLG coating made SP of underlying copper lower making it harder to lose electrons; thus, BLG successfully protected the copper from being corroded. These findings have a foreseeable significance for graphene as a metal anti-corrosion coating.

The degree of corrosion depends on the crystal faces and number of graphene layers, whereas BLG can be used as an anticorrosion coating.

Oxidation behavior of graphene-coated copper at intrinsic graphene defects of different origins

The development of ultrathin barrier films is vital to the advanced semiconductor industry. Graphene appears to hold promise as a protective coating; however, the polycrystalline and defective nature of engineered graphene hinders its practical applications. Here, we investigate the oxidation behavior of graphene-coated Cu foils at intrinsic graphene defects of different origins. Macro-scale information regarding the spatial distribution and oxidation resistance of various graphene defects is readily obtained using optical and electron microscopies after the hot-plate annealing. The controlled oxidation experiments reveal that the degree of structural deficiency is strongly dependent on the origins of the structural defects, the crystallographic orientations of the underlying Cu grains, the growth conditions of graphene, and the kinetics of the graphene growth. The obtained experimental and theoretical results show that oxygen radicals, decomposed from water molecules in ambient air, are effectively inverted at Stone–Wales defects into the graphene/Cu interface with the assistance of facilitators.

Graphene holds promise as a protective coating; however, lattice defects may hinder its practical applicability. Here, the authors investigate the oxidation behavior of graphene-coated copper foils and unveil the interplay between structural defects and oxygen radicals from water molecules in ambient air.

Concurrent fast growth of sub-centimeter single-crystal graphene with controlled nucleation density in a confined channel

The synthesis of large-domain-sized graphene requires a low nucleation density, which inevitably leads to a reduced growth rate. To achieve both a large domain size and high growth rate, we designed a simple channel structure that allowed us to control the nucleation density by tuning the flow dynamics and by introducing an additional catalyst inside to control the growth kinetics at the same time. The designed channel structure plays three roles in the growth of graphene: (1) it retains oxygen to passivate the active nucleation sites; (2) it restricts the mass transfer of CH₄ to control the supersaturation for nucleation; and (3) it provides additional catalytic sites for the decomposition of CH₄ to boost the graphene growth rate. Our strategy allowed the successful preparation of sub-centimeter-domain-sized graphene in 1 h with an average growth rate of 70 μm min^-1, and with a hole mobility of 5500 cm² V^-1 S^-1, which is sufficient for practical applications. Our method paves the way for the large-scale production of single-crystal graphene or other 2D materials at a highly efficient level.

Role of limited hydrogen and flow interval on the growth of single crystal to continuous graphene by low-pressure chemical vapor deposition

A method for defect-free large crystallite graphene growth remains unknown despite much research effort. In this work, we discuss the role of flow duration of H₂ gas for the production of graphene as per requirement and production at a minimum flow rate considering the safety issue of hydrogen utilization. The copper substrate used for growth was treated for different time intervals (0 to 35 min) in H₂ flow prior to growth. Structural and chemical changes occurring in the copper substrate surface were probed by grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. The results were correlated with the Raman spectroscopy data, which can quantify the quality of graphene. With increasing H₂ flow interval, secondary nucleation sites were observed and growth favored few-layer graphene structures. The surface-adsorbed oxygen molecules and its conversion to an OH terminated surface with increasing hydrogen flow interval was found to be a key factor in enhancing nucleation density. The Stranski-Krastanov type of nucleation was observed for samples grown with different time intervals of H₂ treatment, except 5 min of H₂ flow prior to growth for which the Volmer-Weber type of growth favored monolayer graphene crystallite growth.

Understanding and Controlling Cu-Catalyzed Graphene Nucleation: The Role of Impurities, Roughness, and Oxygen Scavenging

The mechanism by which Cu catalyst pretreatments control graphene nucleation density in scalable chemical vapor deposition (CVD) is systematically explored. The intrinsic and extrinsic carbon contamination in the Cu foil is identified by time-of-flight secondary ion mass spectrometry as a major factor influencing graphene nucleation and growth. By selectively oxidizing the backside of the Cu foil prior to graphene growth, a drastic reduction of the graphene nucleation density by 6 orders of magnitude can be obtained. This approach decouples surface roughness effects and at the same time allows us to trace the scavenging effect of oxygen on deleterious carbon impurities as it permeates through the Cu bulk. Parallels to well-known processes in Cu metallurgy are discussed. We also put into context the relative effectiveness and underlying mechanisms of the most widely used Cu pretreatments, including wet etching and electropolishing, allowing a rationalization of current literature and determination of the relevant parameter space for graphene growth. Taking into account the wider CVD growth parameter space, guidelines are discussed for high-throughput manufacturing of "electronic-quality" monolayer graphene films with domain size exceeding 1 mm, suitable for emerging industrial applications, such as electronics and photonics.

Effect of Graphene Modified Cu Current Collector on the Performance of Li4Ti5O12 Anode for Lithium-Ion Batteries

Interface design between current collector and electroactive materials plays a key role in the electrochemical process for lithium-ion batteries. Here, a thin graphene film has been successfully synthesized on the surface of Cu current collector by a large-scale low-pressure chemical vapor deposition (LPCVD) process. The modified Cu foil was used as a current collector to support spinel Li₄Ti₅O₁₂ anode directly. Electrochemical test results demonstrated that graphene coating Cu foil could effectively improve overall Li storage performance of Li₄Ti₅O₁₂ anode. Especially under high current rate (e.g., 10 C), the Li₄Ti₅O₁₂ electrode using modified current collector maintained a favorable capacity, which is 32% higher than that electrode using bare current collector. In addition, cycling performance has been improved using the new type current collector. The enhanced performance can be attributed to the reduced internal resistance and improved charge transfer kinetics of graphene film by increasing electron collection and decreasing lithium ion interfacial diffusion. Furthermore, the graphene film adhered on the Cu foil surface could act as an effective protective film to avoid oxidization, which can effectively improve chemical stability of Cu current collector.

Nondestructive optical visualisation of graphene domains and boundaries

The domain boundaries of polycrystalline graphene produced by chemical vapor deposition (CVD) adversely influence the graphene transporting properties. The existing domain visualisation methods for large area graphene always cause detrimental damage or contamination. Here we report a nondestructive method for spatial visualisation of the domains and boundaries of large area continuous graphene grown on Cu foils (Gr/Cu) by CVD. Using a rationally modified optical microscope, we can directly observe novel star-like bright line sets of Gr/Cu in an enhanced dark field mode. Each set of the bright lines is identified as the ridges of one Cu surface pyramid which arises beneath one enlarging graphene domain due to slower evaporation of graphene-covered Cu than that of graphene-free Cu. This one to one correspondence thereby enables nondestructive visualisation. This method offers an advantageous pathway for monitoring the spatial distribution of the graphene domains and boundaries. We have further discovered for the first time various types of star-like ridge structures which are governed by the underlying Cu crystallographic orientations. This gives rise to a new phenomenon for research on the complex 2D material-metal interfacing.

High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode

A heterostructure photovoltaic diode featuring an all-solid-state TiO2/graphene/dye ternary interface with high-efficiency photogenerated charge separation/transport is described here. Light absorption is accomplished by dye molecules deposited on the outside surface of graphene as photoreceptors to produce photoexcited electron-hole pairs. Unlike conventional photovoltaic conversion, in this heterostructure both photoexcited electrons and holes tunnel along the same direction into graphene, but only electrons display efficient ballistic transport toward the TiO2 transport layer, thus leading to effective photon-to-electricity conversion. On the basis of this ipsilateral selective electron tunnelling (ISET) mechanism, a model monolayer photovoltaic device (PVD) possessing a TiO2/graphene/acridine orange ternary interface showed ∼86.8% interfacial separation/collection efficiency, which guaranteed an ultrahigh absorbed photon-to-current efficiency (APCE, ∼80%). Such an ISET-based PVD may become a fundamental device architecture for photovoltaic solar cells, photoelectric detectors, and other novel optoelectronic applications with obvious advantages, such as high efficiency, easy fabrication, scalability, and universal availability of cost-effective materials.

The role of hydrogen in oxygen-assisted chemical vapor deposition growth of millimeter-sized graphene single crystals

Involving oxygen in the traditional chemical vapor deposition (CVD) process has proven a promising approach to achieve large-scale graphene single crystals (GSCs), but its many relevant fundamental aspects are still not fully understood. Here we report a systematic study on the role of hydrogen in the growth of millimeter-sized GSCs using enclosure-like Cu structures via the oxygen-assisted CVD process. Results show that GSCs have different first layer growth behaviors on the inside and outside surfaces of a Cu enclosure when the H2 environment is varied, and these behaviors will consequently and strongly influence the adlayer formation in these GSCs, leading to two entirely different growth modes. Low H2 partial pressure (PH2) tends to result in fast growth of dendritically shaped GSCs with multiple small adlayers, but high PH2 can modify the GSC shape into hexagons with single large adlayer nuclei. This difference of adlayers is attributed to the different C diffusion paths determined by the shapes of their host GSCs. On the basis of these observations, we developed an isothermal two-step method to obtain GSCs with significantly improved growth rate and sample quality, in which low PH2 is first set to accelerate the growth rate followed by high PH2 to restrict the adlayer nuclei. Our results prove that the growth of GSCs can reach a reasonable optimization between their growth rates and sample quality by simply adjusting the CVD H2 environment, which we believe will lead to more improvements in graphene synthesis and fundamental insight into the related growth mechanisms.

Growth of Continuous Monolayer Graphene with Millimeter-sized Domains Using Industrially Safe Conditions

We demonstrate the growth of continuous monolayer graphene films with millimeter-sized domains on Cu foils under intrinsically safe, atmospheric pressure growth conditions, suitable for application in roll-to-roll reactors. Previous attempts to grow large domains in graphene have been limited to isolated graphene single crystals rather than as part of an industrially useable continuous film. With both appropriate pre-treatment of the Cu and optimization of the CH₄ supply, we show that it is possible to grow continuous films of monolayer graphene with millimeter scale domains within 80 min by chemical vapour deposition. The films are grown under industrially safe conditions, i.e., the flammable gases (H₂ and CH₄) are diluted to well below their lower explosive limit. The high quality, spatial uniformity, and low density of domain boundaries are demonstrated by charge carrier mobility measurements, scanning electron microscope, electron diffraction study, and Raman mapping. The hole mobility reaches as high as ~5,700 cm² V⁻¹ s⁻¹ in ambient conditions. The growth process of such high-quality graphene with a low H₂ concentration and short growth times widens the possibility of industrial mass production.

Controllable Growth of the Graphene from Millimeter-Sized Monolayer to Multilayer on Cu by Chemical Vapor Deposition

As is well established, mastery to precise control of the layer number, stacking order of graphene, and the size of single-crystal monolayer graphene is very important for both fundamental interest and practical applications. In this report, millimeter-sized single-crystal monolayer graphene has been synthesized to multilayer graphene on Cu by chemical vapor deposition. The relationship of the growth process between monolayer graphene and multilayer graphene is investigated carefully. Besides the general multilayer graphene with Bernal stacking order, parts of multilayer graphene with non-Bernal stacking order were modulated under optimized growth conditions. The oxide nanoparticle on the Cu surface derived from annealing has been found to play the key role in nucleation. In addition, the hydrogen concentration impacts significantly on the layer number and shape of the graphene. Moreover, a possible mechanism was proposed to understand the growth process discussed above, which may provide an instruction to graphene growth on Cu by chemical vapor deposition.

Substrate-induced interfacial plasmonics for photovoltaic conversion

Surface plasmon resonance (SPR) is widely used as light trapping schemes in solar cells, because it can concentrate light fields surrounding metal nanostructures and realize light management at the nanoscale. SPR in photovoltaics generally occurs at the metal/dielectric interfaces. A well-defined interface is therefore required to elucidate interfacial SPR processes. Here, we designed a photovoltaic device (PVD) with an atomically flat TiO₂ dielectric/dye/graphene/metal nanoparticle (NP) interface for quantitatively studying the SPR enhancement of the photovoltaic conversion. Theoretical and experimental results indicated that the graphene monolayer was transparent to the electromagnetic field. This transparency led to significant substrate-induced plasmonic hybridization at the heterostructure interface. Combined with interparticle plasmonic coupling, the substrate-induced plasmonics concentrated light at the interface and enhanced the photo-excitation of dyes, thus improving the photoelectric conversion. Such a mechanistic understanding of interfacial plasmonic enhancement will further promote the development of efficient plasmon-enhanced solar cells and composite photocatalysts.

Selective Formation of Zigzag Edges in Graphene Cracks

We report the thermally induced unconventional cracking of graphene to generate zigzag edges. This crystallography-selective cracking was observed for as-grown graphene films immediately following the cooling process subsequent to chemical vapor deposition (CVD) on Cu foil. Results from Raman spectroscopy show that the crack-derived edges have smoother zigzag edges than the chemically formed grain edges of CVD graphene. Using these cracks as nanogaps, we were also able to demonstrate the carrier tuning of graphene through the electric field effect. Statistical analysis of visual observations indicated that the crack formation results from uniaxial tension imparted by the Cu substrates together with the stress concentration at notches in the polycrystalline graphene films. On the basis of simulation results using a simplified thermal shrinkage model, we propose that the cooling-induced tension is derived from the transient lattice expansion of narrow Cu grains imparted by the thermal shrinkage of adjacent Cu grains.

Carbon Electrode-Molecule Junctions: A Reliable Platform for Molecular Electronics

The development of reliable approaches to integrate individual or a small collection of molecules into electrical nanocircuits, often termed "molecular electronics", is currently a research focus because it can not only overcome the increasing difficulties and fundamental limitations of miniaturization of current silicon-based electronic devices, but can also enable us to probe and understand the intrinsic properties of materials at the atomic- and/or molecular-length scale. This development might also lead to direct observation of novel effects and fundamental discovery of physical phenomena that are not accessible by traditional materials or approaches. Therefore, researchers from a variety of backgrounds have been devoting great effort to this objective, which has started to move beyond simple descriptions of charge transport and branch out in different directions, reflecting the interdisciplinarity. This Account exemplifies our ongoing interest and great effort in developing efficient lithographic methodologies capable of creating molecular electronic devices through the combination of top-down micro/nanofabrication with bottom-up molecular assembly. These devices use nanogapped carbon nanomaterials (such as single-walled carbon nanotubes (SWCNTs) and graphene), with a particular focus on graphene, as point contacts formed by electron beam lithography and precise oxygen plasma etching. Through robust amide linkages, functional molecular bridges terminated with diamine moieties are covalently wired into the carboxylic acid-functionalized nanogaps to form stable carbon electrode-molecule junctions with desired functionalities. At the macroscopic level, to improve the contact interface between electrodes and organic semiconductors and lower Schottky barriers, we used SWCNTs and graphene as efficient electrodes to explore the intrinsic properties of organic thin films, and then build functional high-performance organic nanotransistors with ultrahigh responsivities. At the molecular level, to form robust covalent bonds between electrodes and molecules and improve device stability, we developed a reliable system to immobilize individual molecules within a nanoscale gap of either SWCNTs or graphene through covalent amide bond formation, thus affording two classes of carbon electrode-molecule single-molecule junctions. One unique feature of these devices is the fact that they contain only one or two molecules as conductive elements, thus forming the basis for building new classes of chemo/biosensors with ultrahigh sensitivity. We have used these approaches to reveal the dependence of the charge transport of individual metallo-DNA duplexes on π-stacking integrity, and fabricate molecular devices capable of realizing label-free, real-time electrical detection of biological interactions at the single-event level, or switching their molecular conductance upon exposure to external stimuli, such as ion, pH, and light. These investigations highlight the unique advantages and importance of these universal methodologies to produce functional carbon electrode-molecule junctions in current and future researches toward the development of practical molecular devices, thus offering a reliable platform for molecular electronics and the promise of a new generation of multifunctional integrated circuits and sensors.

Towards Wafer-Scale Monocrystalline Graphene Growth and Characterization

Since its discovery in 2004, graphene has boosted numerous fundamental sciences and technological applications due to its massless Dirac particle-like linear band dispersion, that causes unprecedented physical properties. Among the various methods for synthesizing graphene, chemical vapor deposition is the most suitable approach for scalable production on a wafer scale, which is a critical step for practical applications. Graphene grain boundaries (GGBs), consisting of nonhexagonal carbon rings and therefore modulating the properties of graphene films, are inevitably formed via the merging of adjacent graphene domains with different orientations. Large-area monocrystalline graphene synthesis without forming GGBs has been challenging, let alone observing such boundaries. Here, an up-to-date review is presented of how to grow wafer-scale monocrystalline graphene without GGBs. One approach is to make single domain sizes as large as possible by reducing or passivating the number of nucleation sites. Another approach is to align graphene domains in identical orientations, and then merge them atomically. The recently developed methods for observing graphene orientation and GGBs both at the atomic and macro-scales are also presented. Finally, perspectives for future research in graphene growth are discussed.

The Influence of Cu Lattices on the Structure and Electrical Properties of Graphene Domains during Low-Pressure Chemical Vapor Deposition

The influence of various Cu lattices on the texturing of graphene domains during low-pressure chemical vapor deposition was investigated in a large area. The results show that the sizes and shapes of graphene domains grown on Cu(111) substrates match well with those of the underlying Cu(111) domains, which seem to be quasi-single-crystalline. In contrast, on other Cu substrates such as (100) and more intermediate domains, graphene islands with poly-domains (ca. 85 %) are significantly nucleated, eventually merging into polycrystalline graphene. Within the overall channel-length range, graphene from a Cu foil shows a higher resistance compared to graphene from a Cu(111) domain, with the extracted average channel resistances being 34.51 Ω μm(-1) for Cu(111) and 66.17 Ω μm(-1) for the Cu foil.

Suppressing bacterial interaction with copper surfaces through graphene and hexagonal-boron nitride coatings

Understanding biological interaction with graphene and hexagonal-boron nitride (h-BN) membranes has become essential for the incorporation of these unique materials in contact with living organisms. Previous reports show contradictions regarding the bacterial interaction with graphene sheets on metals. Here, we present a comprehensive study of the interaction of bacteria with copper substrates coated with single-layer graphene and h-BN. Our results demonstrate that such graphitic coatings substantially suppress interaction between bacteria and underlying Cu substrates, acting as an effective barrier to prevent physical contact. Bacteria do not "feel" the strong antibacterial effect of Cu, and the substrate does not suffer biocorrosion due to bacteria contact. Effectiveness of these systems as barriers can be understood in terms of graphene and h-BN impermeability to transfer Cu(2+) ions, even when graphene and h-BN domain boundary defects are present. Our results seem to indicate that as-grown graphene and h-BN films could successfully protect metals, preventing their corrosion in biological and medical applications.

Grain size control in the fabrication of large single-crystal bilayer graphene structures

Bilayer graphene (BLG) can provide a tunable band gap when exposed to a vertical electric field. We report here an approach to the synthesis of large single-crystal BLG structures with diameters up to 0.54 mm. We found that both absorption-diffusion and gas-phase penetration mechanisms contributed to the growth of the lower second layer and that the absorption-diffusion mechanism favors faster BLG growth. Our strategy was to suppress nucleation in the growth of the first layer using an established surface oxidation method to maintain a low coverage of graphene on Cu foil. We subsequently maximized the growth of the second layer by increasing the duration of absorption-diffusion. The chemical treatment used to polish the Cu surface to reduce the nucleation of growth in the monolayer increased the nucleation density during the growth of the second layer. Electron transport measurements on dual-gated field-effect transistors showed that the BLG fabricated was of high quality with a sizeable tunable band gap. Our approach may have broad applications for the controlled synthesis of bilayers in materials chemistry.

Graphene growth under Knudsen molecular flow on a confined catalytic metal coil

We have established a simple method for drastically improving the productivity of chemical vapor deposition in large-area graphene synthesis using a roll-stacked Ni coil as a catalyst. Our systematic investigation of the effects of a confined catalytic geometry has shown that the gas flow through interfacial gaps within the stack follows non-continuum fluid dynamics when the size of the gap decreases sufficiently, which enhances the dissolution of the carbon sources into the catalyst during synthesis. Quantitative criteria for graphene growth in the confined geometry are established through the introduction of the Knudsen number, Kn, which is the ratio of the mean-free-path of the gas molecules to the size of the gap. The criteria provided in this article for the synthesis of graphene in the confined geometry are expected to provide the foundations for the efficient mass production of large-area graphene. We also show that the evolution of the catalytic Ni surface in a stacked system results in larger grains in the (111) plane, and consequently in reproducible, uniform, and high-quality multi-layered graphene.

Controlled removal of monolayers for bilayer graphene preparation and visualization

Selective oxidation of monolayer graphene allows the visualization and preparation of bilayer graphene.

Unexpected functions of oxygen in a chemical vapor deposition atmosphere to regulate graphene growth modes

The ppm grade of oxygen in a CVD atmosphere can obviously tune the graphene growth modes of multilayer and etching fragments.

Breakdown of self-limiting growth on oxidized copper substrates: a facile method for large-size high-quality bi- and trilayer graphene synthesis

Copper nanoparticles induced by oxidation can be utilized to tune the dispersion and size of bi- and trilayer graphene grains.

Ad-layers enhance graphene's performance

Graphene's performance as transparent conductor can be significantly enhanced by discontinuous ad-layers on top of a complete graphene sheet by providing highly efficient parallel pathways for carrier transport.

Plasmonic-enhanced Raman scattering of graphene on growth substrates and its application in SERS

We detail a facile method for enhancing the Raman signals of as-grown graphene on Cu foils by depositing gold nanoislands (Au Nis) onto the surface of graphene. It is found that an enhancement of up to 49 fold in the graphene Raman signal has been achieved by depositing a 4 nm thick Au film. The enhancement is considered to be related to the coupling between graphene and the plasmon modes of Au Nis, as confirmed by the finite element simulations. The plasmonic effect of the Au/graphene/Cu hybrid platform leads to a strong absorption at the resonant wavelength whose position shifts from visible light (640 nm) to near-infrared (1085 nm) when the thickness of Au films is increased from 2 nm to 18 nm. Finally, we demonstrate that hybrid substrates are reliable surface-enhanced Raman scattering (SERS) systems, showing an enhancement factor of ∼10(6) for dye molecules Rhodamine B and Rhodamine 6G with uniform and stable response and a detection limit of as low as 0.1 nM for Sudan III and Sudan IV.

Polycrystalline graphene and other two-dimensional materials

Graphene, a single atomic layer of graphitic carbon, has attracted intense attention because of its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are necessary for industrial applications, are typically polycrystalline - that is, composed of single-crystalline grains of varying orientation joined by grain boundaries. Here, we present a review of the large body of research reported in the past few years on polycrystalline graphene. We discuss its growth and formation, the microscopic structure of grain boundaries and their relations to other types of topological defect such as dislocations. The Review further covers electronic transport, optical and mechanical properties pertaining to the characterizations of grain boundaries, and applications of polycrystalline graphene. We also discuss research, still in its infancy, performed on other two-dimensional materials such as transition metal dichalcogenides, and offer perspectives for future directions of research.

Growth of millimeter-size single crystal graphene on Cu foils by circumfluence chemical vapor deposition

A simply and reproducible way is proposed to significantly suppress the nucleation density of graphene on the copper foil during the chemical vapor deposition process. By inserting a copper foil into a tube with one close end, the nucleation density on the copper foils can be reduced by more than five orders of magnitude and an ultra-low nucleation density of ~10 nucleus/cm² has been achieved. The structural analyses demonstrate that single crystal monolayer graphene with a lateral size of 1.9 mm can be grown on the copper foils under the optimized growth condition. The electrical transport studies show that the mobility of such single crystal graphene is around 2400 cm²/Vs.

Turning off hydrogen to realize seeded growth of subcentimeter single-crystal graphene grains on copper

Subcentimeter single-crystalline graphene grains, with diameter up to 5.9 mm, have been successfully synthesized by tuning the nucleation density during atmospheric pressure chemical vapor deposition. Morphology studies show the existence of a single large nanoparticle (>~20 nm in diameter) at the geometric center of those graphene grains. Similar size particles were produced by slightly oxidizing the copper surface to obtain oxide nanoparticles in Ar-only environments, followed by reduction into large copper nanoparticles under H2/Ar environment, and are thus explained to be the main constituent nuclei for graphene growth. On this basis, we were able to control the nanoparticle density by adjusting the degree of oxidation and hydrogen annealing duration, thereby controlling nucleation density and consequently controlling graphene grain sizes. In addition, we found that hydrogen plays dual roles on copper morphology during the whole growth process, that is, removing surface irregularities and, at the same time, etching the copper surface to produce small nanoparticles that have only limited effect on nucleation for graphene growth. Our reported approach provides a highly efficient method for production of graphene film with long-range electronic connectivity and structure coherence.