Theoretical prediction of electronic structure and carrier mobility in single-walled MoS₂ nanotubes

Magneto-transport in the monolayer MoS2material system for high-performance field-effect transistor applications

Electronic transport in monolayer MoS2is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2on different substrate materials, identify the underlying bottlenecks, and provide guidelines for subsequent improvements, we present a deep analysis of the magneto-transport properties in the diffusive limit. Our calculations are performed on suspended monolayer MoS2and MoS2on different substrate materials taking into account remote impurity and the intrinsic and extrinsic phonon scattering mechanisms. We calculate the crucial transport parameters such as the Hall mobility, the conductivity tensor elements, the Hall factor, and the magnetoresistance over a wide range of temperatures, carrier concentrations, and magnetic fields. The Hall factor being a key quantity for calculating the carrier concentration and drift mobility, we show that for suspended monolayer MoS2at room temperature, the Hall factor value is around 1.43 for magnetic fields ranging from 0.001 to 1 Tesla, which deviates significantly from the usual value of unity. In contrast, the Hall factor for various substrates approaches the ideal value of unity and remains stable in response to the magnetic field and temperature. We also show that the MoS2over an Al2O3substrate is a good choice for the Hall effect detector. Moreover, the magnetoresistance increases with an increase in magnetic field strength for smaller magnetic fields before reaching saturation at higher magnetic fields. The presented theoretical model quantitatively captures the scaling of mobility and various magnetoresistance coefficients with temperature, carrier densities, and magnetic fields.

Realization of efficient and selective NO and NO2 detection via surface functionalized h-B2S2 monolayer

In the ever-growing field of two-dimensional (2D) materials, the boron-sulfide (B2S2) monolayer is a promising new addition to MoS2-like 2D materials, with the boron (a lighter element) pair (B2 pair) having similar valence electrons to Mo. Herein, we have functionalized the h-phase boron sulfide monolayer by introducing oxygen atoms (Oh-B2S2) to widen its application scope as a gas sensor. The charge carrier mobilities of this system were found to be 790 × 102 cm2 V-1 s-1 and 32 × 102 cm2 V-1 s-1 for electrons and holes, respectively, which are much higher than the mobilities of the MoS2 monolayer. The potential application of the 2D Oh-B2S2 monolayer in the realm of gas sensing was evaluated using a combination of density functional theory (DFT), ab initio molecular dynamics (AIMD), and non-equilibrium Green's function (NEGF) based simulations. Our results imply that the Oh-B2S2 monolayer outperforms graphene and MoS2 in NO and NO2 selective sensing with higher adsorption energies (-0.56 and -0.16 eV) and charge transfer values (0.34 and 0.13e). Furthermore, the current-voltage characteristics show that the Oh-B2S2 monolayer may selectively detect NO and NO2 gases after bias 1.4 V, providing a greater possibility for the development of boron-based gas-sensing devices for future nanoelectronics.

Electrochemical coupling in subnanometer pores/channels for rechargeable batteries

Subnanometer pores/channels (SNPCs) play crucial roles in regulating electrochemical redox reactions for rechargeable batteries. The delicately designed and tailored porous structure of SNPCs not only provides ample space for ion storage but also facilitates efficient ion diffusion within the electrodes in batteries, which can greatly improve the electrochemical performance. However, due to current technological limitations, it is challenging to synthesize and control the quality, storage, and transport of nanopores at the subnanometer scale, as well as to understand the relationship between SNPCs and performances. In this review, we systematically classify and summarize materials with SNPCs from a structural perspective, dividing them into one-dimensional (1D) SNPCs, two-dimensional (2D) SNPCs, and three-dimensional (3D) SNPCs. We also unveil the unique physicochemical properties of SNPCs and analyse electrochemical couplings in SNPCs for rechargeable batteries, including cathodes, anodes, electrolytes, and functional materials. Finally, we discuss the challenges that SNPCs may face in electrochemical reactions in batteries and propose future research directions.

Recent Advances in Rolling 2D TMDs Nanosheets into 1D TMDs Nanotubes/Nanoscrolls

Transition metal dichalcogenides (TMDs) van der Waals (vdW) 1D heterostructures are recently synthesized from 2D nanosheets, which open up new opportunities for potential applications in electronic and optoelectronic devices. The most recent and promising strategies in regards to forming 1D TMDs nanotubes (NTs) or nanoscrolls (NSs) in this review article as well as their heterostructures that are produced from 2D TMDs are summarized. In order to improve the functionality of ultrathin 1D TMDs that are coaxially combined with boron nitride nanotubes and single-walled carbon nanotubes. 1D heterostructured devices perform better than 2D TMD nanosheets when the two devices are compared. The photovoltaic effect in WS₂ or MoS₂ NTs without a junction may exceed the Shockley-Queisser limit for the above-band-gap photovoltage generation. Photoelectrochemical hydrogen evolution is accelerated when monolayer WS₂ or MoS₂ NSs are incorporated into a heterojunction. In addition, the photovoltaic performance of the WSe₂ /MoS₂  NSs junction is superior to that of the performance of MoS₂ NSs. The summary of the current research about 1D TMDs can be used in a variety of ways, which assists in the development of new types of nanoscale optoelectronic devices. Finally, it also summarizes the current challenges and prospects.

Indirect Band Gap in Scrolled MoS2 Monolayers

MoS₂ nanoscrolls that have inner core radii of ∼250 nm are generated from MoS₂ monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS₂ monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS₂ nanoscroll is larger than that of a MoS₂ bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS₂ nanoscroll compared to Bernal-stacked MoS₂ few-layers. Transport measurements on MoS₂ nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS₂ nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials.

Origin of phonon-limited mobility in two-dimensional metal dichalcogenides

Metal dichalcogenides are novel two-dimensional (2D) semiconductors after the discovery of graphene. In this article, phonon-limited mobility for six kinds of 2D semiconductors with the composition of MX₂is reviewed, in which M (Cr, Mo and W) is the transition metal, and X (S and Se) is the chalcogen element. The review is divided into three parts. In the first part, we briefly introduce the calculation method of mobility, including the empirical model and Boltzmann transport theory (BTE). The application scope, merits and limitations of these methods are summarized. In the second part, we explore empirical models to calculate the mobility of MX₂, including longitudinal acoustic phonon, optical phonon (OP) and polar optical phonon (POP) models. The contribution of multi-valley to mobility is reviewed in the calculation. The differences between static and high-frequency dielectric constants (Δϵ) are only 0.13 and 0.03 for MoS₂and WS₂. Such a low value indicates that the polarization hardly changes in the external field. So, their mobility is not determined by POP, but by deformation potential models. Different from GaAs, POP scattering plays a decisive role in its mobility. Our investigations also reveal that the scattering from POP cannot be ignored in CrSe₂, MoSe₂and WSe₂. In the third parts, we investigate the mobility of MX₂using electron-phonon coupling matrix element, which is based on BTE from the framework of a many-body quantum-field theory. Valence band splitting of MoS₂and WS₂is induced by spin-orbit coupling effect, which leads to the increase of hole mobility. In particular, we review in detail the theoretical and experimental results of MoS₂mobility in recent ten years, and its mobility is also compared with other materials to deepen the understanding.

Size-dependent trends in the hydrogen evolution activity and electronic structure of MoS2 nanotubes

The thermodynamics of hydrogen evolution on MoS2 nanotubes is studied for the first time using periodic density functional theory calculations to obtain hydrogen adsorption free energies (ΔG Hads ) on pristine nanotubes and those with S-vacancy defects. Armchair and zigzag MoS2 nanotubes of different diameters, ranging from 12 to 22 Å, are examined. The H adsorption energy is observed to become more favourable (lower ΔG Hads ) as nanotube diameter decreases, with ΔG Hads values ranging from 1.82 to 1.39 eV on the pristine nanotubes, and from 0.03 to -0.30 eV at the nanotube S-vacancy defect sites. An ideal thermoneutral ΔG Hads value of nearly 0 eV is observed at the S-vacancy site on nanotubes around 20 to 22 Å in diameter. For the pristine nanotubes, density of states calculations reveal that electron transfer from S to Mo occurs during H adsorption, and the energy gap between these two states yields a highly reliable linear correlation with ΔG Hads , where a smaller gap leads to a more favourable hydrogen adsorption. For the S-vacancy defect site the H adsorption resembles that on a pure metallic surface, meaning that a traditional d-band centre model can be applied to explain the trends in ΔG Hads . A linear relation between the position of the Mo d-states and ΔG Hads is found, with d-states closer to the Fermi level leading to strong hydrogen adsorption. Overall this work highlights the relevance of MoS2 nanotubes as promising hydrogen evolution catalysts and explains trends in their activity using the energies of the electronic states involved in binding hydrogen.

Theoretical Study of Anisotropic Carrier Mobility for Two-Dimensional Nb2Se9 Material

Finding new materials with satisfying all the desired criteria for nanodevices is an extremely difficult work. Here, we introduce a novel Nb2Se9 material as a promising candidate, capable of overcoming some physical limitations, such as a suitable band gap, high carrier mobility, and chemical stability. Unlike graphene, it has a noticeable band gap and no dangling bonds at surfaces that deteriorate transport properties, owing to its molecular chain structure. Using density functional theory (DFT) calculations with deformation potential (DP) theory, we find that the electron mobility of 2D Nb2Se9 across the axis direction reaches up to 2.56 × 103 cm2 V-1 s-1 and is approximately 2.5-6 times higher than the mobility of other 2D materials, such as MoS2, black phosphorous, and InSe, at room temperature. Moreover, the mobility of 2D Nb2Se9 is highly anisotropic (μ a /μ c ≈ 6.5). We demonstrate the potential of 2D Nb2Se9 for applications in nanoscale electronic devices and, possibly, mid-infrared photodetectors.

Spontaneous flexoelectricity and band engineering in MS2 (M = Mo, W) nanotubes

Spontaneous flexoelectricity in transition metal dichalcogenide (TMD) nanotubes is critical to the design of new energy devices. However, the electronic properties adjusted by the flexoelectric effect in TMD nanotubes remain vague. In this work, we investigate the effect of flexoelectricity on band engineering in single- and double-wall MS₂ (M = Mo, W) nanotubes with different diameters based on first-principles calculations and an atomic-bond-relaxation method. We find that the energy bandgap reduces and the polarization and flexoelectric voltage increase with decreasing diameter of single-wall MS₂ nanotubes. The polarization charges promoted by the flexoelectric effect can lead to a straddling-to-staggered bandgap transition in the double-wall MS₂ nanotubes. The critical diameters for bandgap transition are about 3.1 and 3.6 nm for double-wall MoS₂ and WS₂ nanotubes, respectively, which is independent of chirality. Our results provide guidance for the design of new energy devices based on spontaneous flexoelectricity.

Torsional strain engineering of transition metal dichalcogenide nanotubes: anab initiostudy

We study the effect of torsional deformations on the electronic properties of single-walled transition metal dichalcogenide (TMD) nanotubes. In particular, considering forty-five select armchair and zigzag TMD nanotubes, we perform symmetry-adapted Kohn-Sham density functional theory calculations to determine the variation in bandgap and effective mass of charge carriers with twist. We find that metallic nanotubes remain so even after deformation, whereas semiconducting nanotubes experience a decrease in bandgap with twist-originally direct bandgaps become indirect-resulting in semiconductor to metal transitions. In addition, the effective mass of holes and electrons continuously decrease and increase with twist, respectively, resulting in n-type to p-type semiconductor transitions. We find that this behavior is likely due to rehybridization of orbitals in the metal and chalcogen atoms, rather than charge transfer between them. Overall, torsional deformations represent a powerful avenue to engineer the electronic properties of semiconducting TMD nanotubes, with applications to devices like sensors and semiconductor switches.

Electronic structure properties of transition metal dichalcogenide nanotubes: a DFT benchmark

In this work, we conduct a benchmark study of bandgap energies and density of states of some transition metal dichalcogenide nanotubes by means of density functional theory (DFT) methodology within both CASTEP and DMol³ methodologies. We compare different chiralities and sizes as well as different levels of theory in order to provide the literature with extensive data regarding crucial electronic structure properties of MoS₂, MoSe₂, mOtE₂, WS₂, WSe₂, and WTe₂ nanotubes. Although the two methods were able to rescue experimental evidences, we observed DMol³ to perform better in terms of computational cost, whereas CASTEP has shown to provide an overall greater accuracy at the cost of higher expenditures. The data provided in this work is an important suggestion of which direction future works should follow in further description of these technological promising materials. Graphical Abstract Frontal (left) and side (right) views for the schematic represenation of a zigzag TMD nanotube.

Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

Hydrogenated graphene (HG)/hexagonal boron nitride (h-BN) heterobilayer is an ideal structure for the high-performance field effect transistor. In this paper, the carrier mobilities of HG/h-BN heterobilayer are investigated based on the first-principles calculations by considering the influence of stacking pattern between HG and h-BN, hydrogen coverage and hydrogenation pattern. With the same hydrogenation pattern, the electron mobility monotonously decreases when the hydrogen coverage increases. With the same hydrogen coverage, different hydrogenation patterns lead to significant changes of mobility. For 25% and 6.25% HGs, the μe (ΓK) of 25% pattern I is 8985.85 cm2/(V s) and of 6.25% pattern I is 23,470.98 cm2/(V s), which are much higher than other patterns. Meanwhile, the h-BN substrate affects the hole mobilities significantly, but it has limit influences on the electron mobilities. The hole mobilities of stacking patterns I and II are close to that of HG monolayer, but much lower than that of stacking patterns III and IV.

Exploring Exemplary Optoelectronic and Charge Transport Properties of KCuX(X=Se,Te)

We report the electronic structure, optical and charge transport properties of the unexplored ternary Zintl phases KCuX(X=Se,Te) from the first principles calculations employing the full-potential linearized augmented plane-wave (FLAPW) method with the Tran Blaha modified Becke-Johnson (TBmBJ) potential. It is demonstrated that the materials are direct band gap (1.13, 1.38 eV) semiconductors with covalent bonding between Cu and (Se/Te). The calculated low effective mass and high carrier mobility (over 10⁵ cm²/V.s) accentuate that KCuX have good carrier transport and the materials may have possible applications in solar cell absorbers and nanoelectronic devices. Absorption spectra indicates that the ternary crystals are UV-A light absorbers and could be useful in photovoltaic and photodetector applications. A study on the effect of pressure (till 5 GPa) is carried out in order to further explore the materials for their electronic band gaps and charge transport properties as they are proposed to be useful in future contemporary electronic devices. It is observed that pressure enhances the intrinsic carrier mobility and thermal stability of KCuX, indicating that the materials can withstand robust external conditions.

Effect of sulphur vacancy and interlayer interaction on the electronic structure and spin splitting of bilayer MoS2

Molybdenum disulfide (MoS₂) is one of the candidate materials for nanoelectronics and optoelectronics devices in the future. The electronic and magnetic properties of MoS₂ can be regulated by interlayer interaction and the vacancy effect. Nevertheless, the combined effect of these two factors on MoS₂ is not clearly understood. In this study, we have investigated the impact of a single S vacancy combined with interlayer interaction on the properties of bilayer MoS₂. Our calculated results show that an S vacancy brings impurity states in the band structure of bilayer MoS₂, and the energy level of the impurity states can be affected by the interlayer distance, which finally disappears in the bulk state when the layer distance is relatively small. Moreover, during the compression of bilayer MoS₂, the bottom layer, where the S vacancy stays, gets an additional charge due to interlayer charge transfer, which first increases, and then decreases due to gradually forming the interlayer S-S covalent bond, as interlayer distance decreases. The change of the additional charge is consistent with the change of the total magnetic moment of the bottom layers, no magnetic moment has been found in the top layer. The distribution of magnetic moment mainly concentrates on the three Mo atoms around the S vacancy, for each of which the magnetic moment is very much related to the Mo-Mo length. Our conclusion is that the interlayer charge transfer and S vacancy co-determine the magnetic properties of this system, which may be a useful way to regulate the electronic and magnetic properties of MoS₂ for potential applications.

Bending energy of 2D materials: graphene, MoS2 and imogolite

The bending process of 2D materials, subject to an external force, is investigated, and applied to graphene, molybdenum disulphide (MoS2), and imogolite. For graphene we obtained 3.43 eV Å2 per atom for the bending modulus, which is in good agreement with the literature. We found that MoS2 is ∼11 times harder to bend than graphene, and has a bandgap variation of ∼1 eV as a function of curvature. Finally, we also used this strategy to study aluminosilicate nanotubes (imogolite) which, in contrast to graphene and MoS2, present an energy minimum for a finite curvature radius. Roof tile shaped imogolite precursors turn out to be stable, and thus are expected to be created during imogolite synthesis, as predicted to occur by self-assembly theory.

Stabilizing benzene-like planar N6 rings to form a single atomic honeycomb BeN3 sheet with high carrier mobility

It is a longstanding quest to use the planar N₆ ring as a structural unit to build stable atomic sheets. However, unlike C₆H₆, the neutral N₆ ring is unstable due to the strong repulsion of the lone-pair of electrons. Using first-principles calculations and the global structure search method, we show that the N₆ unit can be stabilized by the linkage of Be atoms, forming a h-BeN₃ honeycomb monolayer, in which the geometry and the π-molecular orbitals of the N₆ rings are well kept. This sheet is not only energetically, dynamically and thermally stable, but also can withstand high temperatures up to 1000 K. Band structure calculation combined with a group theory analysis and a tight-binding model uncover that h-BeN₃ has a π-band dominated band structure with an indirect band gap of 1.67 eV. While it possesses a direct band gap of 2.07 eV at the Γ point lying in the photon energy region of visual light, its interband dipole transition is symmetrically allowed so that electrons can be excited by photons free of phonons. Based on deformation potential theory, a systematic study of the transport properties reveals that the h-BeN₃ sheet possesses a high carrier mobility of ∼10³ cm² V^-1 s^-1, superior to the extensively studied transition metal dichalcogenide monolayers. We further demonstrate that this sheet can be rolled up into either zigzag or armchair nanotubes. These nanotubes are also dynamically stable, and are all direct band gap semiconductors with carrier mobility comparable to that of their 2D counterparts, regardless of their chirality and diameter. The robust stability and novel electronic and transport properties of the h-BeN₃ sheet and its tubular derivatives endow them with great potential for applications in nanoelectronic devices.

Rolling Up a Monolayer MoS2 Sheet

MoS2 nanoscrolls are formed by argon plasma treatment on monolayer MoS2 sheet. The nanoscale scroll formation is attributed to the partial removal of top sulfur layer in MoS2 during the argon plasma treatment process. This convenient, solvent-free, and high-yielding nanoscroll formation technique is also feasible for other 2D transition metal dichalcogenides.

Bending response of single layer MoS2

Using molecular mechanics (or dynamics) simulations, three different approaches, including the targeted molecular mechanics, four-point bending and nanotube methods, are employed to investigate the bending response of single layer MoS2 (SLMoS2), among which four-point bending is the most accurate approach to determine the bending stiffness according to the continuum theory. It is found that when the bending curvature radius is large enough (e.g. >4 nm), three approaches will give the same bending stiffness of SLMoS2 and the bending behavior is isotropic for SLMoS2, whereas the nanotube method with small tubes (e.g. <4 nm) cannot give the correct bending stiffness. Compared with the reported result from the MoS2 nanotube calculated by density functional theory, the revised Stillinger-Weber (SW) and reactive empirical bond-order (REBO) potentials can give the reasonable bending stiffness of SLMoS2 (8.7-13.4 eV) as well as the effective deformed conformation. In addition, since the Mo-S bond deformation of SLMoS2 under bending is similar to that under in-plane tension/compression, the continuum bending theory can quite accurately predict the bending stiffness of SLMoS2 if a reasonable thickness of SLMoS2 is given. For SLMoS2, the reasonable thickness should be larger than the distance between its two S atomic planes and lower than the distance between two Mo atomic planes of bulk MoS2 crystal, e.g. 0.375-0.445 nm.

Theoretical predictions on the electronic structure and charge carrier mobility in 2D phosphorus sheets

We have investigated the electronic structure and carrier mobility of four types of phosphorous monolayer sheet (α-P, β-P,γ-P and δ-P) using density functional theory combined with Boltzmann transport method and relaxation time approximation. It is shown that α-P, β-P and γ-P are indirect gap semiconductors, while δ-P is a direct one. All four sheets have ultrahigh carrier mobility and show anisotropy in-plane. The highest mobility value is ~3 × 10(5) cm(2)V(-1)s(-1), which is comparable to that of graphene. Because of the huge difference between the hole and electron mobilities, α-P, γ-P and δ-P sheets can be considered as n-type semiconductors, and β-P sheet can be considered as a p-type semiconductor. Our results suggest that phosphorous monolayer sheets can be considered as a new type of two dimensional materials for applications in optoelectronics and nanoelectronic devices.

Carrier mobility of MoS2 nanoribbons with edge chemical modification

Charge mobility can be regulated by edge chemical modification in MoS₂ ribbons.

The effect of nano confinement on the C-h activation and its corresponding structure-activity relationship

The C–H activation of methane, ethane, and t-butane on inner and outer surfaces of nitrogen-doped carbon nanotube (NCNTs) are investigated using density functional theory. It includes NCNTs with different diameters, different N and O concentrations, and different types (armchair and zigzag). A universal structure-reactivity relationship is proposed to characterize the C–H activation occurring both on the inner and outer surfaces of the nano channel. The C–O bond distance, spin density and charge carried by active oxygen are found to be highly related to the C–H activation barriers. Based on these theoretical results, some useful strategies are suggested to guide the rational design of more effective catalysts by nano channel confinement.