Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation

In-Plane Sliding Ferroelectricity Realized in Penta-PdSe2/Penta-PtSe2 van der Waals Heterostructure

Different from conventional 2D sliding ferroelectrics with polarization switchable in the out-of-plane via interlayer sliding, we show the existence of in-plane sliding ferroelectricity in a bilayer of a pentagon-based van der Waals heterostructure formed by vertically stacking an experimentally synthesized penta-PdSe2 sheet and a crystal lattice well-matched penta-PtSe2 sheet. From the 128 sliding patterns, four stable configurations are found that exhibit in-plane sliding ferroelectricity with an ultralow polarization switching barrier of 1.91 meV/atom and a high ferroelectric polarization of ±17.11 × 10-10 C m-1. Following the ferroelectric transition among the stable sliding configurations, significant changes in carrier mobility, electrical conductivity, and second harmonic generation are identified. In particular, the ferroelectric stacking configurations are found to possess a negative Poisson's ratio, facilitating the experimental characterization of the sliding ferroelectric effect. This study demonstrates that pentagonal sheets can be used to realize 2D in-plane sliding ferroelectrics going beyond the existing ones.

Understanding Quasi-Static and Dynamic Characteristics of Organic Ferroelectric Field Effect Transistors

Leveraging poly(vinylidene fluoride-trifluoroethylene) [(PVDF-TrFE)] as the dielectric, we fabricated organic ferroelectric field-effect transistors (OFe-FETs). These devices demonstrate quasi-static transfer characteristics that include a hysteresis window alongside transient phenomena that bear resemblance to synaptic plasticity-encapsulating excitatory postsynaptic current (EPSC) as well as both short-term and long-term potentiation (STP/LTP). We also explore and elucidate other aspects such as the subthreshold swing and the hysteresis window under dynamic state by varying the pace of voltage sweeps. In addition, we developed an analytical model that describes the electrical properties of OFe-FETs, which melds an empirical formula for ferroelectric polarization with a compact model. This model agrees well with the experimental data concerning quasi-static transfer characteristics, potentially serving as a quantitative tool to improve the understanding and design of OFe-FETs.

Frequency-Dependent Multistep Ferroelectric Polarization Switching Mechanism in P(VDF-TrFE)-Based Capacitors Induced by Polystyrene Electret-like Modulation

In this work, we investigate multistep ferroelectric polarization switching dynamics of a series of poly(vinylidene fluoride-trifluoroethylene)/polystyrene, P(VDF-TrFE)/PS, as active layers in ferroelectric capacitors with variable P(VDF-TrFE)/PS thickness ratios and a wide range of driving voltage frequencies (1-1000 Hz). The PS electret-like modulation effects on the depolarized field fluctuation are proven to be responsible for this multistep ferroelectric polarization switching process. To be specific, the switching current density peak splits into two peaks in both positive and negative voltage ranges according to the stimulus-response (S-R) data from the metal-ferroelectric-electret-metal capacitor driven by a periodic triangular voltage wave. The double-peak current trough appears when the transitorily suppressed ferroelectric polarization switching occurs while the discharge and recharge of the PS electret by external voltage brings a specific dynamic change in the electric field across ferroelectric (EFE). We also propose a theoretical model to simulate the ferroelectric polarization switching process at a current trough zone. This phenomenon provides new concepts on the electret-modulated multistep ferroelectric switching dynamics, and such switching mechanisms are critical for realizing reliable nonvolatile memory applications in flexible electronics.

Nonvolatile Memory Organic Light-Emitting Transistors

In the field of active-matrix organic light emitting display (AMOLED), large-size and ultra-high-definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light-emitting transistor (Fe-OLET) device which integrates the switching capability, light-emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe-OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof-of-concept device optimized through interfacial modification approach exhibits 20 times improved field-effect mobility and five times increased luminance. The integration of nonvolatile memory, switching and light-emitting capabilities within Fe-OLET provides a promising internal-storage-driving paradigm, thus creating a new pathway for deploying storage capacitor-free circuitry to improve the pixel aperture ratio and the integration density of circuits toward the on-chip advanced display applications.

Low-Operating-Voltage Two-Dimensional Tin Perovskite Field-Effect Transistors with Multilayer Gate Dielectrics Based on a Fluorinated Copolymer

The fabrication of organic-inorganic perovskite field-effect transistors (FETs) with polymer gate dielectrics is challenging because of the solvent corrosion and wettability issues at interfaces. A few polymers have been integrated into perovskite transistors; however, these devices have high operating voltages due to low dielectric constants. Herein, poly(vinylidenefluoride-co-trifluoroethylene) (PVDF-TrFE) with a high dielectric constant is introduced into bottom-gate phenylethylammonium tin iodide perovskite [(PEA)₂SnI₄] FETs. Polytetrafluoroethylene (PTFE) and cross-linked poly(4-vinylphenol) (PVP) (CL-PVP) are used to address the issues of solvent corrosion and wettability. We design the PVDF-TrFE/PTFE and PVDF-TrFE/PTFE/CL-PVP dielectric layers, where the ferroelectric properties of PVDF-TrFE are reduced by PTFE. The (PEA)₂SnI₄ FETs operate at relatively low gate voltages, exhibiting good overall performance with average hole mobilities of 0.42 and 0.36 cm² V^-1 s^-1. Our findings provide a feasible strategy for constructing low-operating-voltage perovskite FETs with large-dielectric-constant ferroelectric polymers as gate dielectrics by a solution processing technique.

Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors

We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization–voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. As the capacitance of the buffer layer increased, high remnant polarization (P_r), high hysteresis, and long retention times were observed. Exceptionally, when poly(methylmethacrylate) and rigid poly(aryl ether) (poly(9,9-bis(4-hydroxyphenyl)fluorene-co-decafluorobiphenyl)) were used as the buffer layer, P_r had a value close to 0 in the dynamic measurement polarization–voltage (P–V) characteristic, but the quasi-static measurement transfer characteristic and the static measurement retention characteristic showed relatively high hysteresis and long retention times. Our study provides a scientific and technical basis for the design of ferroelectric memory and neuromorphic devices.

Tuning Charge Transport in PVDF-Based Organic Ferroelectric Transistors: Status and Outlook

The use of polymer ferroelectric dielectrics in organic field-effect transistors (FETs) for nonvolatile memory application was demonstrated more than 15 years ago. The ferroelectric dielectric polyvinylidene fluoride (PVDF) and its copolymers are most widely used for such applications. In addition to memory applications, polymer ferroelectrics as a dielectric layer in organic FETs yield insights into interfacial transport properties. Advantages of polymer ferroelectric dielectrics are their high dielectric constant compared to other polymer dielectrics and their tunable dielectric constant with temperature. Further, the polarization strength may also be tuned by externally poling the ferroelectric dielectric layer. Thus, PVDF and its copolymers provide a unique testbed not just for investigating polarization induced transport in organic FETs, but also enhancing device performance. This article discusses recent developments of PVDF-based ferroelectric organic FETs and capacitors with a focus on tuning transport properties. It is shown that FET carrier mobilities exhibit a weak temperature dependence as long as the dielectric is in the ferroelectric phase, which is attributed to a polarization fluctuation driven process. The low carrier mobilities in PVDF-based FETs can be enhanced by tuning the poling condition of the dielectric. In particular, by using solution-processed small molecule semiconductors and other donor-acceptor copolymers, it is shown that selective poling of the PVDF-based dielectric layer dramatically improves FET properties. Finally, the prospects of further improvement in organic ferroelectric FETs and their challenges are provided.

Interfacial Interaction of Absorbate Copper Phthalocyanine with PVDF Based Ferroelectric Polymer Substrates: A Spectroscopic Study

Studies of CuPc thin films on underlying ferroelectric copolymeric and terpolymeric substrates have been performed by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Work function (WF) and highest occupied molecular orbital (HOMO) energy level shift observed from UPS spectroscopy for successive deposition of CuPc molecules on ferroelectric polymer surfaces confirm the formation of interface dipole at the CuPc-ferroelectric polymer interface owing to charge transfer from the tailing region of the CuPc HOMO density of states (DOS) to the ferroelectric polymer layer. According to our thickness dependent XPS data, CuPc molecules are coupled to the organic ferroelectric surfaces through the central metal atom of the CuPc molecules, i.e., copper atom, and the halogens of underlying ferroelectric polymer surfaces, and hence support the charge transfer phenomenon from CuPc molecules to the ferroelectric polymer substrate. Polarization dependent NEXAFS results reveal that CuPc molecules retain their tilted geometrical configuration even at submonolayer thickness of the molecular films on both ferroelectric surfaces and confirms the electronic structural disturbance associated with structural modification of CuPc molecules due to interfacial charge transfer. Therefore, the energy level alignment with increment in the thickness of CuPc films at both the organic semiconductor-ferroelectric polymer interface is controlled by the charge transfer phenomenon from deposited CuPc molecules to the organic ferroelectric substrates. Our results provide a clear understanding about chemical interactions, molecular configurations, energy level alignment, and their correlation at CuPc/polymeric ferroelectric interfaces that can be important for organic nonvolatile memory and synaptic based thin-film transistor devices.

pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories

Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted considerable attention because of their promising potential for memory applications, while a critical issue is the large energy consumption mainly caused by a high operating voltage and slow data switching. Here, we employ ultrathin ferroelectric polymer and semiconducting molecular crystals to create low-voltage Fe-OFET memories. Devices require only pJ-level energy consumption. The writing and erasing processes require ∼1.2 and 1.6 pJ/bit, respectively, and the reading energy is ∼1.9 pJ/bit (on state) and ∼0.2 fJ/bit (off state). Thus, our memories consume only <0.1% of the energy required for devices using bulk functional layers. Besides, our devices also exhibit low contact resistance and steep subthreshold swing. Therefore, we provide a strategy that opens up a path for Fe-OFETs toward emerging applications, such as wearable electronics.

Interfacial Flat-Lying Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) are the most fundamental device units in organic electronics. Interface engineering at the semiconductor/dielectric interface is an effective approach for improving device performance, particularly for enhancing charge transport in conducting channels. Here, we report flat-lying molecular monolayers that exhibit good uniformity and high crystallinity at the semiconductor/dielectric interface, deposited through slow thermal evaporation. Transistor devices achieve high carrier mobility up to 2.80 cm² V^-1 s^-1, which represents a remarkably improvement in device performance compared with devices that are completely based on fast-evaporated films. Interfacial flat-lying monolayers benefit charge transport by suppressing the polarization of dipoles and narrowing the broadening of trap density of states. Our work provides a promising strategy for enhancing the performance of OFETs by using interfacial flat-lying molecular monolayers.

Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

In organic field-effect transistors, the first few molecular layers at the semiconductor/dielectric interface are regarded as the active channel for charge transport; thus, great efforts have been devoted to the modification and optimization of molecular packing at such interfaces. Here, we report organic monolayers with large-area uniformity and high crystallinity deposited by an antisolvent-assisted spin-coating method acting as the templating layers between the dielectric and thermally evaporated semiconducting layers. The predeposited crystalline monolayers significantly enhance the film crystallinity of upper layers and the overall performance of transistors using these hybrid-deposited semiconducting films, showing a high carrier mobility up to 11.3 cm² V^-1 s^-1. Additionally, patterned transistor arrays composed of the templating monolayers are fabricated, yielding an average mobility of 7.7 cm² V^-1 s^-1. This work demonstrates a promising method for fabricating low-cost, high-performance, and large-area organic electronics.

Solution-Processed Flexible Organic Ferroelectric Phototransistor

In this article, we demonstrate ferroelectric insulator, P(VDF-TrFE), can be integrated with red light sensitive polymeric semiconductor, P(DPP-TzBT), toward ferroelectric organic phototransistors (OPTs). This ferroelectricity-modulated phototransistor possesses different nonvolatile and tunable dark current states due to P(VDF-TrFE)'s remnant polarization. As a result, the OPT is endowed with a tunable dark current level ranging from 1 nA to 100 nA. Once the OPT is programmed or electrically polarized, its photo-to-dark (signal-to-noise) ratio can be "flexible" during photodetection process, without gate bias application. This kind of organic ferroelectric phototransistor has great potential in detecting wide ranges of light signals with good linearity. Moreover, its tuning mechanism discussed in this work can be helpful to understand the operation mechanism of organic phototransistor (OPT). It can be promising for novel photodetection application in plastic electronic devices.

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low-cost and easy-fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor in order to overcome the half-selection problem. Unlike complicated manufacturing using multiple dielectrics, this system simplifies 1T1T FeRAM cell fabrication using one common dielectric. To achieve this goal, a strategy for semiconductor/insulator (S/I) interface modulation is put forward and applied to nonhysteretic selection transistors with high performances for driving or addressing purposes. As a result, high hole mobility of 3.81 cm² V^-1 s^-1 (average) for 2,6-diphenylanthracene (DPA) and electron mobility of 0.124 cm² V^-1 s^-1 (average) for N,N'-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDI-FCN₂ ) are obtained in selection transistors. In this work, we demonstrate this technology's potential for organic ferroelectric-based pixelated memory module fabrication.

Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film

The high operating voltage is a primary issue preventing the commercial application of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this work, we propose a novel route to resolve this issue by employing two ultrathin AlO_X interfacial layers sandwiching an ultrathin ferroelectric polymer film with a low coercive field, in the fabricated flexible Fe-OFET NVM. The operation voltage of Fe-OFET NVMs decreases with the downscaling thickness of the ferroelectric film. By inserting two ultrathin AlO_X interfacial layers at both sides of the ultrathin ferroelectric film, not only the gate leakage is prominently depressed but also the mobility is greatly improved. Excellent memory performances, with large mobility of 1.7 ~ 3.3 cm² V^-1 s^-1, high reliable memory switching endurance over 2700 cycles, high stable data storage retention capability over 8 × 10⁴ s with memory on-off ratio larger than 10², are achieved at the low operating voltage of 4 V, which is the lowest value reported to data for all Fe-OFET NVMs. Simultaneously, outstanding mechanical fatigue property with the memory performances maintaining well over 7500 bending cycles at a bending radius of 5.5 mm is also achieved in our flexible FE-OFET NVM.

Speed up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors

Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted intensive attention because of their promising potential in nonvolatile memory devices. The quick switching between binary states is a significant fundamental feature in evaluating Fe-OFET memories. Here, we employ 2D molecular crystals via a solution-based process as the conducting channels in transistor devices, in which ferroelectric polymer acts as the gate dielectric. A high carrier mobility of up to 5.6 cm² V^-1 s^-1 and a high on/off ratio of 10⁶ are obtained. In addition, the efficient charge injection by virtue of the ultrathin 2D molecular crystals is beneficial in achieving rapid operations in the Fe-OFETs; devices exhibit short switching time of ∼2.9 and ∼3.0 ms from the on- to the off-state and from the off- to the on-state, respectively. Consequently, the presented strategy is capable of speeding up Fe-OFET memory devices by using solution-processed 2D molecular crystals.

Preparation of Single-Crystalline Heterojunctions for Organic Electronics

Organic single-crystalline heterojunctions are composed of different single crystals interfaced together. The intrinsic highly ordered heterostructure in these multicomponent solids holds the capacity for multifunctions, as well as superior charge-transporting properties, promising high-performance electronic applications such as ambipolar transistors and solar cells. However, this kind of heterojunction is not easily available and the preparation methods need to be developed. Recent advances in the efficient strategies that have emerged in yielding high-quality single-crystalline heterojunctions are highlighted here. The advantages and limitations of each strategy are also discussed. The obtained single-crystalline heterojunctions have started to exhibit rich physical properties, including metallic conduction, photovoltaic effects, and so on. Further structural optimization of the heterojunctions to accommodate the electronic device configuration is necessary to significantly advance this research direction.

"Self-Peel-Off" Transfer Produces Ultrathin Polyvinylidene-Fluoride-Based Flexible Nanodevices

Here, a new strategy, self-peel-off transfer, for the preparation of ultrathin flexible nanodevices made from polyvinylidene-fluoride (PVDF) is reported. In this process, a functional pattern of nanoparticles is transferred via peeling from a temporary substrate to the final PVDF film. This peeling process takes advantage of the differences in the work of adhesion between the various layers (the PVDF layer, the nanoparticle-pattern layer and the substrate layer) and of the high stresses generated by the differential thermal expansion of the layers. The work of adhesion is mainly guided by the basic physical/chemical properties of these layers and is highly sensitive to variations in temperature and moisture in the environment. The peeling technique is tested on a variety of PVDF-based functional films using gold/palladium nanoparticles, carbon nanotubes, graphene oxide, and lithium iron phosphate. Several PVDF-based flexible nanodevices are prepared, including a single-sided wireless flexible humidity sensor in which PVDF is used as the substrate and a double-sided flexible capacitor in which PVDF is used as the ferroelectric layer and the carrier layer. Results show that the nanodevices perform with high repeatability and stability. Self-peel-off transfer is a viable preparation strategy for the design and fabrication of flexible, ultrathin, and light-weight nanodevices.

Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. In this paper, we demonstrated low-voltage operating FE-OFET NVMs based on a ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] owed to its low coercive field. By applying an ultraviolet-ozone (UVO) treatment to modify the surface of P(VDF-TrFE-CTFE) films, the growth model of the pentacene film was changed, which improved the pentacene grain size and the interface morphology of the pentacene/P(VDF-TrFE-CTFE). Thus, the mobility of the FE-OFET was significantly improved. As a result, a high performance FE-OFET NVM, with a high mobility of 0.8 cm²V⁻¹s⁻¹, large memory window of 15.4~19.2, good memory on/off ratio of 10³, the reliable memory endurance over 100 cycles and stable memory retention ability, was achieved at a low operation voltage of ±15 V.

Drift of charge carriers in crystalline organic semiconductors

We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10(5) V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

Site-Selection in Single-Molecule Junction for Highly Reproducible Molecular Electronics

Adsorption sites of molecules critically determine the electric/photonic properties and the stability of heterogeneous molecule-metal interfaces. Then, selectivity of adsorption site is essential for development of the fields including organic electronics, catalysis, and biology. However, due to current technical limitations, site-selectivity, i.e., precise determination of the molecular adsorption site, remains a major challenge because of difficulty in precise selection of meaningful one among the sites. We have succeeded the single site-selection at a single-molecule junction by performing newly developed hybrid technique: simultaneous characterization of surface enhanced Raman scattering (SERS) and current-voltage (I-V) measurements. The I-V response of 1,4-benzenedithiol junctions reveals the existence of three metastable states arising from different adsorption sites. Notably, correlated SERS measurements show selectivity toward one of the adsorption sites: "bridge sites". This site-selectivity represents an essential step toward the reliable integration of individual molecules on metallic surfaces. Furthermore, the hybrid spectro-electric technique reveals the dependence of the SERS intensity on the strength of the molecule-metal interaction, showing the interdependence between the optical and electronic properties in single-molecule junctions.

Interfacing Solution-Grown C60 and (3-Pyrrolinium)(CdCl3 ) Single Crystals for High-Mobility Transistor-Based Memory Devices

Aligned ferroelectric single crystals of (3-pyrrolinium)(CdCl₃ ) can be prepared from solution on top of aligned semiconducting C₆₀ single crystals using an orthogonal solvent. Memory devices based on these ferroelectric/semiconductor bilayered heterojunctions exhibit much larger hysteresis compared with that of only C₆₀ single crystals. More importantly, the introduction of the ferroelectric layer induces the memory window without dramatically reducing the charge mobility.