1
|
Fathabadi M, Vafadar MF, Lamanque JC, Zhao S. Electrical Doping in Sc-III-Nitrides: Toward Multifunctional Devices at the Signal Device Level. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2407277. [PMID: 39449236 DOI: 10.1002/smll.202407277] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2024] [Revised: 09/23/2024] [Indexed: 10/26/2024]
Abstract
A homogeneous integration of various types of devices using a single material platform is an ideal route toward multifunctional devices at the single-device level for miniaturized, fast, and energy-efficient systems. However, such a single material platform is still missing. Scandium-containing III-nitrides (Sc-III-nitrides) are promising, but their electrical doping properties remain unknown. In this work, the electrical doping in Sc-III-nitrides is investigated and optoelectronic devices using Sc-III-nitrides on silicon (Si) are further demonstrated. The material format of the nanowire is used, with magnesium (Mg) serving as the impurity dopant to control the electrical doping. It is discovered that, by adjusting the Mg doping concentrations, the Sc-III-nitrides can be tuned from n-type to p-type. Device application in light-emitting is further demonstrated using the p-type Sc-III-nitrides as the hole injection layer. The performance comparison between devices using the regrown Sc-containing p-type contact layers and non-Sc-containing p-type contact layers indicates the advantage of Sc incorporation in improving the quality of the regrown p-type layer in a device structure. The electrical doping in Sc-III-nitrides demonstrated in this study represents an important step toward a homogeneous integration of different types of devices using a single material platform.
Collapse
Affiliation(s)
- Milad Fathabadi
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, H3A 0E9, Canada
| | - Mohammad Fazel Vafadar
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, H3A 0E9, Canada
| | - Jean-Christophe Lamanque
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, H3A 0E9, Canada
| | - Songrui Zhao
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, H3A 0E9, Canada
| |
Collapse
|
2
|
Min J, Wang Y, Park TY, Wang D, Janjua B, Jeong D, Kim GS, Sun H, Zhao C, Mendes JC, Correia MRP, Carvalho DF, Cardoso JPS, Wang Q, Zhang H, Ng TK, Ooi BS. Bottom-Up Formation of III-Nitride Nanowires: Past, Present, and Future for Photonic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405558. [PMID: 39434490 DOI: 10.1002/adma.202405558] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 09/23/2024] [Indexed: 10/23/2024]
Abstract
The realization of semiconductor heterostructures marks a significant advancement beyond silicon technology, driving progress in high-performance optoelectronics and photonics, including high-brightness light emitters, optical communication, and quantum technologies. In less than a decade since 1997, nanowires research has expanded into new application-driven areas, highlighting a significant shift toward more challenging and exploratory research avenues. It is therefore essential to reflect on the past motivations for nanowires development, and explore the new opportunities it can enable. The advancement of heterogeneous integration using dissimilar substrates, materials, and nanowires-semiconductor/electrolyte operating platforms is ushering in new research frontiers, including the development of perovskite-embedded solar cells, photoelectrochemical (PEC) analog and digital photonic systems, such as PEC-based photodetectors and logic circuits, as well as quantum elements, such as single-photon emitters and detectors. This review offers rejuvenating perspectives on the progress of these group-III nitride nanowires, aiming to highlight the continuity of research toward high impact, use-inspired research directions in photonics and optoelectronics.
Collapse
Affiliation(s)
- Jungwook Min
- Department of Optical Engineering, Kumoh National Institute of Technology, Gumi, 39253, Republic of Korea
| | - Yue Wang
- Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Tae-Yong Park
- Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Danhao Wang
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Bilal Janjua
- Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Dasom Jeong
- Department of Optical Engineering, Kumoh National Institute of Technology, Gumi, 39253, Republic of Korea
| | - Gyun Seo Kim
- Department of Optical Engineering, Kumoh National Institute of Technology, Gumi, 39253, Republic of Korea
| | - Haiding Sun
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Chao Zhao
- Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101804, China
| | | | - Maria Rosário P Correia
- Departamento de Física & i3N, Universidade de Aveiro, Campus Universitário de Santiago, Aveiro, 3810-193, Portugal
| | - Diogo F Carvalho
- International Iberian Nanotechnology Laboratory, Braga, 4715-330, Portugal
| | - José P S Cardoso
- Departamento de Física & i3N, Universidade de Aveiro, Campus Universitário de Santiago, Aveiro, 3810-193, Portugal
| | - Qingxiao Wang
- Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Huafan Zhang
- Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Tien Khee Ng
- Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Boon S Ooi
- Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| |
Collapse
|
3
|
Amador-Mendez N, Kochetkov FM, Hernandez R, Neplokh V, Grenier V, Finot S, Valera L, Duraz J, Fominykh N, Parshina EK, Deriabin KV, Islamova RM, Herth E, Bouchoule S, Julien F, Abraham M, Das S, Jacopin G, Krasnikov DV, Nasibulin A, Eymery J, Durand C, Mukhin IS, Tchernycheva M. UV-A Flexible LEDs Based on Core-Shell GaN/AlGaN Quantum Well Microwires. ACS APPLIED MATERIALS & INTERFACES 2024; 16:51000-51009. [PMID: 39258764 DOI: 10.1021/acsami.4c06181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/12/2024]
Abstract
Nanostructured ultraviolet (UV) light sources represent a growing research field in view of their potential applications in wearable optoelectronics or medical treatment devices. In this work, we report the demonstration of the first flexible UV-A light emitting diode (LED) based on AlGaN/GaN core-shell microwires. The device is based on a composite microwire/poly(dimethylsiloxane) (PDMS) membrane with flexible transparent electrodes. The electrode transparency in the UV range is optimized: namely, we demonstrate that single-walled carbon nanotube electrodes provide a stable electrical contact to the membrane with high transparency (70% at 350 nm). The flexible UV-A membrane demonstrating electroluminescence around 345 nm is further applied to excite Zn-Ir-BipyPDMS luminophores: the UV-A LED is combined with the elastic luminophore-containing membrane to produce a visible amber emission from 520 to 650 nm. The obtained results pave the way for flexible inorganic light-emitting diodes to be employed in sensing, detection of fluorescent labels, or light therapy.
Collapse
Affiliation(s)
- Nuno Amador-Mendez
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Fedor M Kochetkov
- Alferov University, Khlopina, 8/3, 194021 Saint Petersburg, Russia
- Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya, 29, 195251 Saint Petersburg, Russia
| | - Roberto Hernandez
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Vladimir Neplokh
- Alferov University, Khlopina, 8/3, 194021 Saint Petersburg, Russia
- Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya, 29, 195251 Saint Petersburg, Russia
| | - Vincent Grenier
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, NPSC, 38000 Grenoble, France
| | - Sylvain Finot
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
| | - Lucie Valera
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, NPSC, 38000 Grenoble, France
| | - Jules Duraz
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Nikita Fominykh
- International Laboratory of Quantum Optoelectronics, HSE University, St. Petersburg 190008, Russia
| | - Elizaveta K Parshina
- St. Petersburg State University, 7/9 Universitetskaya nab., 199034 Saint Petersburg, Russia
| | - Konstantin V Deriabin
- St. Petersburg State University, 7/9 Universitetskaya nab., 199034 Saint Petersburg, Russia
| | - Regina M Islamova
- St. Petersburg State University, 7/9 Universitetskaya nab., 199034 Saint Petersburg, Russia
| | - Etienne Herth
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Sophie Bouchoule
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - François Julien
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Malini Abraham
- Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala 695019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Subrata Das
- Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, Kerala 695019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Gwénolé Jacopin
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
| | | | - Albert Nasibulin
- Kemerovo State University, Krasnaya Str. 6, Kemerovo 650000, Russia
| | - Joël Eymery
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, NPSC, 38000 Grenoble, France
| | - Christophe Durand
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, NPSC, 38000 Grenoble, France
| | - Ivan S Mukhin
- Alferov University, Khlopina, 8/3, 194021 Saint Petersburg, Russia
- Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya, 29, 195251 Saint Petersburg, Russia
| | - Maria Tchernycheva
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| |
Collapse
|
4
|
Tyagi D, Laxmi V, Basu N, Reddy L, Tian Y, Ouyang Z, Nayak PK. Recent advances in two-dimensional perovskite materials for light-emitting diodes. DISCOVER NANO 2024; 19:109. [PMID: 38954158 PMCID: PMC11219672 DOI: 10.1186/s11671-024-04044-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Accepted: 06/10/2024] [Indexed: 07/04/2024]
Abstract
Light-emitting diodes (LEDs) are an indispensable part of our daily life. After being studied for a few decades, this field still has some room for improvement. In this regard, perovskite materials may take the leading role. In recent years, LEDs have become a most explored topic, owing to their various applications in photodetectors, solar cells, lasers, and so on. Noticeably, they exhibit significant characteristics in developing LEDs. The luminous efficiency of LEDs can be significantly enhanced by the combination of a poor illumination LED with low-dimensional perovskite. In 2014, the first perovskite-based LED was illuminated at room temperature. Furthermore, two-dimensional (2D) perovskites have enriched this field because of their optical and electronic properties and comparatively high stability in ambient conditions. Recent and relevant advancements in LEDs using low-dimensional perovskites including zero-dimensional to three-dimensional materials is reported. The major focus of this article is based on the 2D perovskites and their heterostructures (i.e., a combination of 2D perovskites with transition metal dichalcogenides, graphene, and hexagonal boron nitride). In comparison to 2D perovskites, heterostructures exhibit more potential for application in LEDs. State-of-the-art perovskite-based LEDs, current challenges, and prospects are also discussed.
Collapse
Affiliation(s)
- Deepika Tyagi
- Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
| | - Vijay Laxmi
- Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Nilanjan Basu
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Leelakrishna Reddy
- Department of Physics, University of Johannesburg, Johannesburg, 2006, South Africa
| | - Yibin Tian
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Zhengbiao Ouyang
- Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Shenzhen University, Shenzhen, 518060, China.
| | - Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai, 600036, India.
- Centre for Nano and Material Sciences, Jain (Deemed-to-be University), Jain Global Campus, Kanakapura, , Bangalore, Karnataka, 562112, India.
| |
Collapse
|
5
|
Vafadar MF, Zhao S. Architecture for Surface-Emitting Lasers with On-Demand Lasing Wavelength by Nanowire Optical Cavities. ACS NANO 2024; 18:14290-14297. [PMID: 38767588 DOI: 10.1021/acsnano.3c13186] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Despite the importance and exciting progress of surface-emitting (SE) semiconductor lasers, we have limited choices of lasing wavelength even today. From an application viewpoint, it is desirable to have an architecture that can allow SE lasing in a wide spectral range, based on the need of applications. Herein, we demonstrate a path for SE lasers with lasing wavelength on demand by exploiting III-nitride nanowire optical cavities formed by low-temperature selective area epitaxy (SAE), combined with fine-tuning of substrate patterns and photonic bands. Moreover, in this study, we focus on the device demonstration in the ultraviolet (UV) spectral range, considering the severe lag in developing SE lasers in the UV wavelength range compared to longer wavelengths, e.g., near-infrared (NIR), as well as the potential applications enabled by UV lasers such as solar blind optical wireless communications. Ultralow threshold wavelength-tunable SE UV lasing is achieved by optical pumping. Moreover, SE UV lasing under direct electric current injection is also achieved. This study not only represents an important step in the journey of SE UV laser development but, more importantly, it lays the ground for SE lasers with lasing wavelength on demand, broadly from NIR to UV.
Collapse
Affiliation(s)
- Mohammad Fazel Vafadar
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Songrui Zhao
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| |
Collapse
|
6
|
Oh JK, Um DY, Chandran B, Kim SU, Lee CR, Ra YH. Low-Leakage Current Core-Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9020-9029. [PMID: 38324755 DOI: 10.1021/acsami.3c17356] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Despite the considerable potential of AlGaN-based ultraviolet-B light-emitting diodes (UV-B LEDs) in various applications such as phototherapy, UV curing, plant growth, and analytical technology, their development is still ongoing due to low luminescence efficiency. In this study, we introduced a novel epitaxial growth mechanism to effectively control the height and thickness of AlGaN multiple wells (MWs) on AlGaN nanorod structures using horizontal reactor-based metal-organic chemical vapor deposition (MOCVD). By adjusting the H2 carrier gas flow rate, we could control the growth boundary layer's thickness, successfully separating the AlGaN well and p-AlGaN layer from the substrate. Cathodoluminescence (CL) measurements confirmed the stability of the core-shell AlGaN quantum wells as a highly stable nonpolarized structure, with the wavelength peak remaining almost unchanged under various injection currents. Furthermore, transmission electron microscopy (TEM) provided clear evidence of differentiation, highlighting the distinct formation of the 275 nm AlGaN core and the 295 nm AlGaN shell structure. The developed AlGaN MW structure, characterized by these rectification features, not only demonstrated a significantly improved electroluminescence (EL) peak intensity but also exhibited a much lower leakage current compared to the conventional core-shell AlGaN structure. The newly proposed growth mechanism and advanced nonpolarized core-shell AlGaN structure are expected to serve as excellent alternatives for substantially enhancing the efficiency of the next generation of high-efficiency UV LEDs.
Collapse
Affiliation(s)
- Jeong-Kyun Oh
- Division of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, Republic of Korea
| | - Dae-Young Um
- Division of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, Republic of Korea
| | - Bagavath Chandran
- Division of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, Republic of Korea
| | - Sung-Un Kim
- Division of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, Republic of Korea
| | - Cheul-Ro Lee
- Division of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, Republic of Korea
| | - Yong-Ho Ra
- Division of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, Republic of Korea
| |
Collapse
|
7
|
Vafadar MF, Zhao S. Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires. Sci Rep 2023; 13:6633. [PMID: 37095158 PMCID: PMC10126006 DOI: 10.1038/s41598-023-33457-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2023] [Accepted: 04/13/2023] [Indexed: 04/26/2023] Open
Abstract
Surface-emitting (SE) semiconductor lasers have changed our everyday life in various ways such as communication and sensing. Expanding the operation wavelength of SE semiconductor lasers to shorter ultraviolet (UV) wavelength range further broadens the applications to disinfection, medical diagnostics, phototherapy, and so on. Nonetheless, realizing SE lasers in the UV range has remained to be a challenge. Despite of the recent breakthrough in UV SE lasers with aluminum gallium nitride (AlGaN), the electrically injected AlGaN nanowire UV lasers are based on random optical cavities, whereas AlGaN UV vertical-cavity SE lasers (VCSELs) are all through optical pumping and are all with large lasing threshold power densities in the range of several hundred kW/cm2 to MW/cm2. Herein, we report ultralow threshold, SE lasing in the UV spectral range with GaN-based epitaxial nanowire photonic crystals. Lasing at 367 nm is measured, with a threshold of only around 7 kW/cm2 (~ 49 μJ/cm2), a factor of 100× reduction compared to the previously reported conventional AlGaN UV VCSELs at similar lasing wavelengths. This is also the first achievement of nanowire photonic crystal SE lasers in the UV range. Further given the excellent electrical doping that has already been established in III-nitride nanowires, this work offers a viable path for the development of the long-sought-after semiconductor UV SE lasers.
Collapse
Affiliation(s)
- Mohammad Fazel Vafadar
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada
| | - Songrui Zhao
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada.
| |
Collapse
|
8
|
Vermeersch R, Jacopin G, Castioni F, Rouvière JL, García-Cristóbal A, Cros A, Pernot J, Daudin B. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission. NANOTECHNOLOGY 2023; 34:275603. [PMID: 37023726 DOI: 10.1088/1361-6528/accaeb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Accepted: 04/06/2023] [Indexed: 06/19/2023]
Abstract
Molecular beam epitaxy growth and optical properties of GaN quantum disks in AlN nanowires were investigated, with the purpose of controlling the emission wavelength of AlN nanowire-based light emitting diodes. Besides GaN quantum disks with a thickness ranging from 1 to 4 monolayers, a special attention was paid to incomplete GaN disks exhibiting lateral confinement. Their emission consists of sharp lines which extend down to 215 nm, in the vicinity of AlN band edge. The room temperature cathodoluminescence intensity of an ensemble of GaN quantum disks embedded in AlN nanowires is about 20% of the low temperature value, emphasizing the potential of ultrathin/incomplete GaN quantum disks for deep UV emission.
Collapse
Affiliation(s)
- Rémy Vermeersch
- Univ. Grenoble Alpes, Grenoble INP, CNRS, Institut Néel , F-38000 Grenoble, France
- Univ. Grenoble Alpes, Grenoble INP, CEA, IRIG-PHELIQS, NPSC, 17 rue des martyrs, F-38000 Grenoble, France
| | - Gwénolé Jacopin
- Univ. Grenoble Alpes, Grenoble INP, CNRS, Institut Néel , F-38000 Grenoble, France
| | - Florian Castioni
- Univ. Grenoble Alpes, CEA, LETI, 17 rue des martyrs, F-38000 Grenoble, France
| | - Jean-Luc Rouvière
- Univ. Grenoble Alpes, Grenoble INP, CEA, IRIG-MEM, LEMMA, 17 rue des martyrs, F-38000 Grenoble, France
| | | | - Ana Cros
- Materials Science Institute (ICMUV), University of Valencia, ES-46071 Valencia, Spain
| | - Julien Pernot
- Univ. Grenoble Alpes, Grenoble INP, CNRS, Institut Néel , F-38000 Grenoble, France
| | - Bruno Daudin
- Univ. Grenoble Alpes, Grenoble INP, CEA, IRIG-PHELIQS, NPSC, 17 rue des martyrs, F-38000 Grenoble, France
| |
Collapse
|
9
|
Cameron D, Coulon PM, Fairclough S, Kusch G, Edwards PR, Susilo N, Wernicke T, Kneissl M, Oliver RA, Shields PA, Martin RW. Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes. NANO LETTERS 2023; 23:1451-1458. [PMID: 36748796 PMCID: PMC9951243 DOI: 10.1021/acs.nanolett.2c04826] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 01/31/2023] [Indexed: 06/18/2023]
Abstract
Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be reduced or overcome by moving away from conventional planar growth and toward three-dimensional nanostructuring. Nanorods have the potential for enhanced doping, reduced dislocation densities, improved light extraction efficiency, and quantum wells free from the quantum-confined Stark effect. Here, we demonstrate a hybrid top-down/bottom-up approach to creating highly uniform AlGaN core-shell nanorods on sapphire repeatable on wafer scales. Our GaN-free design avoids self-absorption of the quantum well emission while preserving electrical functionality. The effective junctions formed by doping of both the n-type cores and p-type caps were studied using nanoprobing experiments, where we find low turn-on voltages, strongly rectifying behaviors and significant electron-beam-induced currents. Time-resolved cathodoluminescence measurements find short carrier liftetimes consistent with reduced polarization fields. Our results show nanostructuring to be a promising route to deep-UV-emitting LEDs, achievable using commercially compatible methods.
Collapse
Affiliation(s)
- Douglas Cameron
- Department
of Physics, Scottish Universities Physics Alliance (SUPA), University of Strathclyde, Glasgow G4 0NG, United Kingdom
| | - Pierre-Marie Coulon
- Department
of Electrical & Electronic Engineering, University of Bath, Bath BA2 7AY, United Kingdom
- Centre
de Recherche sur l’Hétéro-Epitaxie et ses Applications
(CRHEA)−Centre National de la Recherche Scientifique (CNRS), Rue Bernard Grégory, 06560 Valbonne, France
| | - Simon Fairclough
- Department
of Materials Science and Metallurgy, University
of Cambridge, CB3 OFS Cambridge, United Kingdom
| | - Gunnar Kusch
- Department
of Materials Science and Metallurgy, University
of Cambridge, CB3 OFS Cambridge, United Kingdom
| | - Paul R. Edwards
- Department
of Physics, Scottish Universities Physics Alliance (SUPA), University of Strathclyde, Glasgow G4 0NG, United Kingdom
| | - Norman Susilo
- Institute
of Solid State Physics, Technische Universität
Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - Tim Wernicke
- Institute
of Solid State Physics, Technische Universität
Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - Michael Kneissl
- Institute
of Solid State Physics, Technische Universität
Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - Rachel A. Oliver
- Department
of Materials Science and Metallurgy, University
of Cambridge, CB3 OFS Cambridge, United Kingdom
| | - Philip A. Shields
- Department
of Electrical & Electronic Engineering, University of Bath, Bath BA2 7AY, United Kingdom
| | - Robert W. Martin
- Department
of Physics, Scottish Universities Physics Alliance (SUPA), University of Strathclyde, Glasgow G4 0NG, United Kingdom
| |
Collapse
|
10
|
Liu X, Wang D, Wang S, Fan W, Yang Y, Gao P, Chen M, Yang W, Cai K. Promoting osseointegration by in situ biosynthesis of metal ion-loaded bacterial cellulose coating on titanium surface. Carbohydr Polym 2022; 297:120022. [DOI: 10.1016/j.carbpol.2022.120022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Revised: 08/02/2022] [Accepted: 08/20/2022] [Indexed: 11/26/2022]
|
11
|
Dvoretckaia L, Gridchin V, Mozharov A, Maksimova A, Dragunova A, Melnichenko I, Mitin D, Vinogradov A, Mukhin I, Cirlin G. Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates. NANOMATERIALS 2022; 12:nano12121993. [PMID: 35745332 PMCID: PMC9230727 DOI: 10.3390/nano12121993] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Revised: 06/06/2022] [Accepted: 06/07/2022] [Indexed: 12/19/2022]
Abstract
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO2 substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs have electroluminescence in the broad spectral range, with a maximum near 500 nm, which can be employed for multicolor or white light screen development.
Collapse
Affiliation(s)
- Liliia Dvoretckaia
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
| | - Vladislav Gridchin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
- Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
| | - Alexey Mozharov
- Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
| | - Alina Maksimova
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
| | - Anna Dragunova
- Department of Physics, National Research University Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia; (A.D.); (I.M.)
| | - Ivan Melnichenko
- Department of Physics, National Research University Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia; (A.D.); (I.M.)
| | - Dmitry Mitin
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (D.M.); (A.V.)
| | - Alexandr Vinogradov
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (D.M.); (A.V.)
| | - Ivan Mukhin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (D.M.); (A.V.)
- Higher School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
- Correspondence:
| | - Georgy Cirlin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
- Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
| |
Collapse
|
12
|
Parkhomenko RG, De Luca O, Kołodziejczyk Ł, Modin E, Rudolf P, Martínez Martínez D, Cunha L, Knez M. Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine. Dalton Trans 2021; 50:15062-15070. [PMID: 34610072 DOI: 10.1039/d1dt02529e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results of amorphous AlN films obtained by atomic layer deposition. We used trimethylaluminum and monomethylhydrazine as the precursors at a deposition temperature of 375-475 °C. The structural and mechanical properties and chemical composition of the synthesized films were investigated in detail by X-ray diffraction, X-ray photoelectron spectroscopy, electron and probe microscopy and nanoindentation. The obtained films were compact and continuous, exhibiting amorphous nature with homogeneous in-depth composition, at an oxygen content of as low as 4 at%. The mechanical properties were comparable to those of AlN films produced by other techniques.
Collapse
Affiliation(s)
| | - Oreste De Luca
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Łukasz Kołodziejczyk
- Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz, Poland
| | - Evgeny Modin
- CIC NanoGUNE, Tolosa Hiribidea 76, E-20018 San Sebastian, Spain.
| | - Petra Rudolf
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Diego Martínez Martínez
- Physics Center of Minho and Porto Universities-CF-UM-UP, School of Sciences, University of Minho, Campus de Gualtar, 4710-057, Braga, Portugal
| | - Luis Cunha
- Physics Center of Minho and Porto Universities-CF-UM-UP, School of Sciences, University of Minho, Campus de Gualtar, 4710-057, Braga, Portugal
| | - Mato Knez
- CIC NanoGUNE, Tolosa Hiribidea 76, E-20018 San Sebastian, Spain. .,IKERBASQUE, Basque Foundation for Science, Alameda Urquijo 36-5, 48011 Bilbao, Spain
| |
Collapse
|
13
|
Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands. PHOTONICS 2021. [DOI: 10.3390/photonics8070267] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
The development of electrically pumped semiconductor diode lasers emitting at the ultraviolet (UV)-B and -C spectral bands has been an active area of research over the past several years, motivated by a wide range of emerging applications. III-Nitride materials and their alloys, in particular AlGaN, are the material of choice for the development of this ultrashort-wavelength laser technology. Despite significant progress in AlGaN-based light-emitting diodes (LEDs), the technological advancement and innovation in diode lasers at these spectral bands is lagging due to several technical challenges. Here, the authors review the progress of AlGaN electrically-pumped lasers with respect to very recent achievements made by the scientific community. The devices based on both thin films and nanowires demonstrated to date will be discussed in this review. The state-of-the-art growth technologies, such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates used for the laser demonstrations will be highlighted. We will also outline technical challenges associated with the laser development, which must be overcome in order to achieve a critical technological breakthrough and fully realize the potential of these lasers.
Collapse
|
14
|
Gačević Ž, Grandal J, Guo Q, Kirste R, Varela M, Sitar Z, Sánchez García MA. Structural and optical properties of self-assembled AlN nanowires grown on SiO 2/Si substrates by molecular beam epitaxy. NANOTECHNOLOGY 2021; 32:195601. [PMID: 33535196 DOI: 10.1088/1361-6528/abe2c7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Self-assembled AlN nanowires (NWs) are grown by plasma-assisted molecular beam epitaxy (PAMBE) on SiO2/Si (111) substrates. Using a combination of in situ reflective high energy electron diffraction and ex situ x-ray diffraction (XRD), we show that the NWs grow nearly strain-free, preferentially perpendicular to the amorphous SiO2 interlayer and without epitaxial relationship to Si(111) substrate, as expected. Scanning electron microscopy investigation reveals significant NWs coalescence, which results in their progressively increasing diameter and formation of columnar structures with non-hexagonal cross-section. Making use of scanning transmission electron microscopy (STEM), the NWs initial diameters are found in the 20-30 nm range. In addition, the formation of a thin (≈30 nm) polycrystalline AlN layer is observed on the substrate surface. Regarding the structural quality of the AlN NWs, STEM measurements reveal the formation of extended columnar regions, which grow with a virtually perfect metal-polarity wurtzite arrangement and with extended defects only sporadically observed. Combination of STEM and electron energy loss spectroscopy reveals the formation of continuous aluminum oxide (1-2 nm) on the NW surface. Low temperature photoluminescence measurements reveal a single near-band-edge (NBE) emission peak, positioned at 6.03 eV (at 2 K), a value consistent with nearly zero NW strain evidenced by XRD and in agreement with the values obtained on AlN bulk layers synthesized by other growth techniques. The significant full-width-at-half-maximum of NBE emission, found at ≈20 meV (at 2 K), suggests that free and bound excitons are mixed together within this single emission band. Finally, the optical properties of the hereby reported AlN NWs grown by PAMBE are comprehensively compared to optical properties of bulk, epitaxial and/or columnar AlN grown by various techniques such as: physical vapor transport, metal organic vapor phase epitaxy, metal organic chemical vapor deposition and molecular beam epitaxy.
Collapse
Affiliation(s)
- Ž Gačević
- ISOM, Universidad Politécnica de Madrid Avda. Complutense 30, E-28040 Madrid, Spain
| | - J Grandal
- ISOM, Universidad Politécnica de Madrid Avda. Complutense 30, E-28040 Madrid, Spain
- GFMC, Departamento de Física de los Materiales & Instituto Pluridisciplinar, Universidad Complutense de Madrid, E-28040, Spain
| | - Q Guo
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States of America
| | - R Kirste
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States of America
| | - M Varela
- GFMC, Departamento de Física de los Materiales & Instituto Pluridisciplinar, Universidad Complutense de Madrid, E-28040, Spain
| | - Z Sitar
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States of America
| | - M A Sánchez García
- ISOM, Universidad Politécnica de Madrid Avda. Complutense 30, E-28040 Madrid, Spain
| |
Collapse
|
15
|
Zhang H, Huang C, Song K, Yu H, Xing C, Wang D, Liu Z, Sun H. Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:044401. [PMID: 33477132 DOI: 10.1088/1361-6633/abde93] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2020] [Accepted: 01/21/2021] [Indexed: 06/12/2023]
Abstract
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established themselves as the key materials for building ultraviolet (UV) optoelectronic and power electronic devices. However, further improvements to device performance are lagging, largely due to the difficulties in precisely controlling carrier behavior, both carrier generation and carrier transport, within AlGaN-based devices. Fortunately, it has been discovered that instead of using AlGaN layers with fixed Al compositions, by grading the Al composition along the growth direction, it is possible to (1) generate high-density electrons and holes via polarization-induced doping; (2) manipulate carrier transport behavior via energy band modulation, also known as 'band engineering'. Consequently, such compositionally graded AlGaN alloys have attracted extensive interest as promising building blocks for efficient AlGaN-based UV light emitters and power electronic devices. In this review, we focus on the unique physical properties of graded AlGaN alloys and highlight the key roles that such graded structures play in device exploration. Firstly, we elaborate on the underlying mechanisms of efficient carrier generation and transport manipulation enabled by graded AlGaN alloys. Thereafter, we comprehensively summarize and discuss the recent progress in UV light emitters and power electronic devices incorporating graded AlGaN structures. Finally, we outline the prospects associated with the implementation of graded AlGaN alloys in the pursuit of high-performance optoelectronic and power electronic devices.
Collapse
Affiliation(s)
- Haochen Zhang
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Chen Huang
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Kang Song
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Huabin Yu
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Chong Xing
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Danhao Wang
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zhongling Liu
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| |
Collapse
|
16
|
Saket O, Wang J, Amador-Mendez N, Morassi M, Kunti A, Bayle F, Collin S, Jollivet A, Babichev A, Sodhi T, Harmand JC, Julien FH, Gogneau N, Tchernycheva M. Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy. NANOTECHNOLOGY 2021; 32:085705. [PMID: 33171444 DOI: 10.1088/1361-6528/abc91a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We analyse the electrical and optical properties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources. Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Electron-beam induced current (EBIC) microscopy of the nanowires shows that in the case of a n-base p-n junction the parasitic radial growth enhanced by the magnesium (Mg) doping leads to a mixed axial-radial behaviour with strong wire-to-wire fluctuations of the junction position and shape. By reverting the doping order p-base p-n junctions with a purely axial well-defined structure and a low wire-to-wire dispersion are achieved. The good optical quality of the top n nanowire segment grown on a p-doped stem is preserved. A hole concentration in the p-doped segment exceeding 1018 cm-3 was extracted from EBIC mapping and photoluminescence analyses. This high concentration is reached without degrading the nanowire morphology.
Collapse
Affiliation(s)
- Omar Saket
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Junkang Wang
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Nuño Amador-Mendez
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Martina Morassi
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Arup Kunti
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Fabien Bayle
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Stéphane Collin
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Arnaud Jollivet
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | | | - Tanbir Sodhi
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Jean-Christophe Harmand
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - François H Julien
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Noelle Gogneau
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Maria Tchernycheva
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| |
Collapse
|
17
|
Liu M, Tan L, Zhou B, Li L, Mi Z, Li CJ. Group-III Nitrides Catalyzed Transformations of Organic Molecules. Chem 2021. [DOI: 10.1016/j.chempr.2020.09.014] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
|
18
|
Shuai Y, Rafique M, Soomro S, Rauf Abro F, Ali Sahito A. Ab-initio investigations on the energetic, opto-electronic and magnetic characteristics of alkali metal (AM) atom substituted monatomic AlN layer. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2020.110829] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
|
19
|
Almalawi D, Lopatin S, Mitra S, Flemban T, Siladie AM, Gayral B, Daudin B, Roqan IS. Enhanced UV Emission of GaN Nanowires Functionalized by Wider Band Gap Solution-Processed p-MnO Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2020; 12:34058-34064. [PMID: 32623885 PMCID: PMC7497627 DOI: 10.1021/acsami.0c07029] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Accepted: 07/04/2020] [Indexed: 06/11/2023]
Abstract
GaN-based UV light-emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider band gap (∼5 eV) than that of GaN. Further investigations reveal that the photoluminescence intensity of the GaN NWs increases up to ∼3.9-fold (∼290%) after functionalizing them with p-MnO QDs, while the internal quantum efficiency is improved by ∼1.7-fold. Electron energy loss spectroscopy (EELS) incorporated into transmission electron microscopy reveals an increase in the density of states in QD-decorated NWs compared to the bare ones. The advanced optical and EELS analyses indicate that the energy transfer from the wider band gap p-MnO QDs to n-GaN NW can lead to substantial emission enhancement and greater radiative recombination contribution because of the good band alignment between MnO QDs and GaN NWs. This work provides valuable insights into an environmentally friendly strategy for improving UV device performance.
Collapse
Affiliation(s)
- Dhaifallah Almalawi
- Physical
Sciences and Engineering Division, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Physics
Department, Faculty of Science, Taif University, P.O. Box 888, Taif 21974, Saudi Arabia
| | - Sergei Lopatin
- Imaging
and Characterization Laboratory, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Somak Mitra
- Physical
Sciences and Engineering Division, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Tahani Flemban
- Department
of Physics, College of Science, Imam Abdulrahman
Bin Faisal University (IAU), Dammam 31441, Saudi Arabia
| | | | - Bruno Gayral
- University
of Grenoble-Alpes, CEA-IRIG, PHELIQS, 17 av. des Martyrs, Grenoble F-38000, France
| | - Bruno Daudin
- University
of Grenoble-Alpes, CEA-IRIG, PHELIQS, 17 av. des Martyrs, Grenoble F-38000, France
| | - Iman S. Roqan
- Physical
Sciences and Engineering Division, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| |
Collapse
|
20
|
Fabrication and Characterization of Aluminum Nitride Nanoparticles by RF Magnetron Sputtering and Inert Gas Condensation Technique. COATINGS 2020. [DOI: 10.3390/coatings10040411] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Aluminum nitride nanoparticles (AlN-NPs) were fabricated by a RF magnetron sputtering and inert gas condensation technique. By keeping the source parameters and sputtering time of 4 h fixed, it was possible to produce AlN-NPs with a size in the range of 2–3 nm. Atomic force microscopy (AFM), Raman spectroscopy, X-ray diffraction (XRD), and UV-visible absorption were used to characterize the obtained AlN-NPs. AFM topography images showed quazi-sphere nanoparticles with a size ranging from 2 to 3 nm. The XRD measurements confirmed the hexagonal wurtzite structure of AlN nanoparticles. Furthermore, the optical band gap was determined by the UV-visible absorption spectroscopy. The Raman spectroscopy results showed vibration transverse-optical modes A1(TO), E1(TO), as well as longitudinal-optical modes E1(LO), A1(LO).
Collapse
|
21
|
Velpula RT, Jain B, Philip MR, Nguyen HD, Wang R, Nguyen HPT. Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum. Sci Rep 2020; 10:2547. [PMID: 32054926 PMCID: PMC7018839 DOI: 10.1038/s41598-020-59442-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2019] [Accepted: 01/17/2020] [Indexed: 11/09/2022] Open
Abstract
We report the demonstration of the first axial AlInN ultraviolet core-shell nanowire light-emitting diodes with highly stable emission in the ultraviolet wavelength range. During epitaxial growth of the AlInN layer, an AlInN shell is spontaneously formed, resulting in reduced nonradiative recombination on the nanowire surface. The AlInN nanowires exhibit a high internal quantum efficiency of ~52% at room temperature for emission at 295 nm. The peak emission wavelength can be varied from 290 nm to 355 nm by changing the growth conditions. Moreover, significantly strong transverse magnetic (TM) polarized emission is recorded, which is ~4 times stronger than the transverse electric (TE) polarized light at 295 nm. This study provides an alternative approach for the fabrication of new types of high-performance ultraviolet light emitters.
Collapse
Affiliation(s)
- Ravi Teja Velpula
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States
| | - Barsha Jain
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States
| | - Moab Rajan Philip
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States
| | - Hoang Duy Nguyen
- Institute of Chemical Technology, Vietnam Academy of Science and Technology, 1 Mac Dinh Chi Street, District 1, Ho Chi Minh City, 700000, Vietnam.
| | - Renjie Wang
- Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L7, Canada
| | - Hieu Pham Trung Nguyen
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, New Jersey, 07102, United States.
| |
Collapse
|
22
|
AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects. MICROMACHINES 2020; 11:mi11020125. [PMID: 31979274 PMCID: PMC7074201 DOI: 10.3390/mi11020125] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2019] [Revised: 01/19/2020] [Accepted: 01/22/2020] [Indexed: 12/12/2022]
Abstract
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.
Collapse
|
23
|
Sui J, Ku PC. An Empirical Model for GaN Light Emitters with Dot-in-Wire Polar Nanostructures. MICROMACHINES 2020; 11:E82. [PMID: 31940852 PMCID: PMC7019970 DOI: 10.3390/mi11010082] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2019] [Revised: 01/07/2020] [Accepted: 01/08/2020] [Indexed: 06/10/2023]
Abstract
A set of empirical equations were developed to describe the optical properties of III-nitride dot-in-wire nanostructures. These equations depend only on the geometric properties of the structures, enabling the design process of a III-nitride light emitter comprised of dot-in-wire polar nanostructures, to be greatly simplified without first-principle calculations. Results from the empirical model were compared to experimental measurements and reasonably good agreements were observed. Strain relaxation was found to be the dominant effect in determining the optical properties of dot-in-wire nanostructures.
Collapse
Affiliation(s)
| | - Pei-Cheng Ku
- Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave, Ann Arbor, MI 48109, USA;
| |
Collapse
|
24
|
Siladie AM, Jacopin G, Cros A, Garro N, Robin E, Caliste D, Pochet P, Donatini F, Pernot J, Daudin B. Mg and In Codoped p-type AlN Nanowires for pn Junction Realization. NANO LETTERS 2019; 19:8357-8364. [PMID: 31724873 DOI: 10.1021/acs.nanolett.9b01394] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Efficient, mercury-free deep ultraviolet (DUV) light-emitting diodes (LEDs) are becoming a crucial challenge for many applications such as water purification. For decades, the poor p-type doping and difficult current injection of Al-rich AlGaN-based DUV LEDs have limited their efficiency and therefore their use. We present here the significant increase in AlN p-doping thanks to Mg/In codoping, which leads to an order of magnitude higher Mg solubility limit in AlN nanowires (NWs). Optimal electrical activation of acceptor impurities has been further achieved by electron irradiation, resulting in tunnel conduction through the AlN NW p-n junction. The proposed theoretical scenario to account for enhanced Mg incorporation involves an easy ionization of In-vacancy complex associated with a negative charging of Mg in In vicinity. This leads to favored incorporation of negatively charged Mg into the AlN matrix, opening the path to the realization of highly efficient NW-based LEDs in the DUV range.
Collapse
Affiliation(s)
| | - Gwénolé Jacopin
- Grenoble INP, Institut Néel , University Grenoble Alpes, CNRS , 38000 Grenoble , France
| | - Ana Cros
- Institute of Materials Science , Universidad de Valencia , Valencia , Spain
| | - Nuria Garro
- Institute of Materials Science , Universidad de Valencia , Valencia , Spain
| | - Eric Robin
- IRIG-MEM, LEMMA , University Grenoble Alpes, CEA , F-38000 Grenoble , France
| | - Damien Caliste
- IRIG-MEM, L-SIM , University Grenoble Alpes, CEA , F-38000 Grenoble , France
| | - Pascal Pochet
- IRIG-MEM, L-SIM , University Grenoble Alpes, CEA , F-38000 Grenoble , France
| | - Fabrice Donatini
- Grenoble INP, Institut Néel , University Grenoble Alpes, CNRS , 38000 Grenoble , France
| | - Julien Pernot
- Grenoble INP, Institut Néel , University Grenoble Alpes, CNRS , 38000 Grenoble , France
| | - Bruno Daudin
- IRIG-PHELIQS, NPSC , University Grenoble Alpes, CEA , 38000 Grenoble , France
| |
Collapse
|
25
|
Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 79] [Impact Index Per Article: 15.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
Collapse
Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| |
Collapse
|
26
|
Boies AM, Hoecker C, Bhalerao A, Kateris N, de La Verpilliere J, Graves B, Smail F. Agglomeration Dynamics of 1D Materials: Gas-Phase Collision Rates of Nanotubes and Nanorods. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1900520. [PMID: 31120182 DOI: 10.1002/smll.201900520] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2019] [Revised: 04/08/2019] [Indexed: 06/09/2023]
Abstract
The agglomeration and self-assembly of gas-phase 1D materials in anthropogenic and natural systems dictate their resulting nanoscale morphology, multiscale hierarchy, and ultimate macroscale properties. Brownian motion induces collisions, upon which 1D materials often restructure to form bundles and can lead to aerogels. Herein, the first results of collision rates for 1D nanomaterials undergoing thermal transport are presented. The Langevin dynamic simulations of nanotube rotation and translation demonstrate that the collision kernels for rigid nanotubes or nanorods are ≈10 times greater than spherical systems. Resulting reduced order equations allow straightforward calculation of the physical parameters to determine the collision kernel for straight and curved 1D materials from 102 to 106 nm length. The collision kernels of curved 1D structures increase ≈1.3 times for long (>102 nm), and ≈5 times for short (≈102 nm) relative to rigid materials. Applications of collision frequencies allow the first kinetic analysis of aerogel self-assembly from gas-phase carbon nanotubes (CNTs). The timescales for CNT collision and bundle formation (0.3-42 s) agree with empirical residence times in CNT reactors (3-15 s). These results provide insights into the CNT length, number, and timescales required for aerogel formation, which bolsters our understanding of mass-produced 1D aerogel materials.
Collapse
Affiliation(s)
- Adam M Boies
- Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, UK
| | - Christian Hoecker
- Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, UK
| | - Ajinkya Bhalerao
- Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, UK
| | - Nikolaos Kateris
- Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, UK
| | | | - Brian Graves
- Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, UK
| | - Fiona Smail
- Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, UK
| |
Collapse
|
27
|
Brubaker MD, Genter KL, Roshko A, Blanchard PT, Spann BT, Harvey TE, Bertness KA. UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy. NANOTECHNOLOGY 2019; 30:234001. [PMID: 30776789 PMCID: PMC7679058 DOI: 10.1088/1361-6528/ab07ed] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Ultraviolet light-emitting diodes fabricated from N-polar AlGaN/GaN core-shell nanowires (NWs) with p-i-n structure produced electroluminescence at 365 nm with ∼5× higher intensities than similar GaN homojunction LEDs. The improved characteristics were attributed to localization of spontaneous recombination to the NW core, reduction of carrier overflow losses through the NW shell, and elimination of current shunting. Poisson-drift-diffusion modeling indicated that a shell Al mole fraction of x = 0.1 in Al x Ga1-x N effectively confines electrons and injected holes to the GaN core region. AlGaN overcoat layers targeting this approximate Al mole fraction were found to possess a low-Al-content tip and high-Al-content shell, as determined by scanning transmission electron microscopy. Photoluminescence spectroscopy further revealed the actual Al mole fraction to be NW diameter-dependent, where the tip and shell compositions converged towards the nominal flux ratio for large diameter NWs.
Collapse
Affiliation(s)
- Matt D Brubaker
- Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO, United States of America
| | | | | | | | | | | | | |
Collapse
|
28
|
Zhao S, Wang R, Chu S, Mi Z. Molecular Beam Epitaxy of III-Nitride Nanowires: Emerging Applications From Deep-Ultraviolet Light Emitters and Micro-LEDs to Artificial Photosynthesis. IEEE NANOTECHNOLOGY MAGAZINE 2019. [DOI: 10.1109/mnano.2019.2891370] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
|
29
|
Saha PK, Pendem V, Chouksey S, Udai A, Aggarwal T, Ganguly S, Saha D. Enhanced luminescence from InGaN/GaN nano-disk in a wire array caused by surface potential modulation during wet treatment. NANOTECHNOLOGY 2019; 30:104001. [PMID: 30557860 DOI: 10.1088/1361-6528/aaf8de] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Here we have demonstrated the profound impact of surface potential on the luminescence of an array of InGaN/GaN nano-disk in a wire heterostructure. The change in surface potential is brought about by a combination of dry and successive wet-processing treatments. The photoluminescence (PL) properties are determined as a function of size and height of this array of nano-disks. The observed characteristics are coherently explained by considering a change in quantum confinement induced by the change in surface potential, quantum-confined Stark effect, exciton binding energy and strain relaxation for varying surface potential. The change in hole bound state energy due to parabolic potential well near the side-wall is found to be the dominating factor. The PL peak position, full width at half-maximum, strain relaxation and integrated PL intensity are studied as a function of incident power and temperature. The devices demonstrate higher integrated PL intensity and slope efficiency.
Collapse
Affiliation(s)
- Pratim Kumar Saha
- Applied Quantum Mechanics Laboratory, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India
| | | | | | | | | | | | | |
Collapse
|
30
|
Sadaf SM, Ra YH, Zhao S, Szkopek T, Mi Z. Structural and electrical characterization of monolithic core-double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy. NANOSCALE 2019; 11:3888-3895. [PMID: 30758042 DOI: 10.1039/c9nr00081j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We have studied the epitaxy and structural characterization of monolithic n-GaN/Al/p-AlGaN nanowire heterostructures. It is found that high quality, nearly defect free, full shell epitaxial Al can be grown in situ on Al(Ga)N nanowires and vice versa. Detailed scanning transmission electron microscopy (STEM), high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) suggest that the Al (111) plane maintains an epitaxial relationship with Al(Ga)N (0001) in the nanowire growth direction. Full ultraviolet composition range (340 nm-210 nm) Al/Al(Ga)N core-double shell nanowire backward diode characteristics were investigated. We have demonstrated a monolithic n++-GaN/Al/p++-Al(Ga)N nanowire backward diode, wherein an epitaxial Al layer serves as the tunnel junction. Such an Al(Ga)N-based n-p-n nanowire backward diode exhibits record low resistivity (<1.5 × 10-4Ω cm2) and a low turn-on voltage of ∼2.7 V.
Collapse
Affiliation(s)
- S M Sadaf
- Advanced Electronics and Photonics, National Research Council Canada, Ottawa K1A 0R6, Canada. and Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Y-H Ra
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada and Optic & Electronic Component Material Center, Korea Institute of Ceramic Engineering & Technology, 101 Soho-ro, Jinju, 52851, Republic of Korea
| | - S Zhao
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - T Szkopek
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Z Mi
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada and Department of Electrical Engineering and Computer Science, Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA.
| |
Collapse
|
31
|
Sarkar R, Ghosh K, Bhunia S, Nag D, Khiangte KR, Laha A. Triaxially uniform high-quality Al x Ga (1-x)N (x ∼ 50%) nanowires on template free sapphire substrate. NANOTECHNOLOGY 2019; 30:065603. [PMID: 30530937 DOI: 10.1088/1361-6528/aaf139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We have demonstrated the growth of high-quality Al x Ga(1-x)N (x ∼ 50%) nanowires (NWs) for the first time on the sapphire substrate without using GaN NWs as the template, by plasma-assisted molecular beam epitaxy. Our newly developed process elucidates that depending on the substrate temperature and V/III ratio an AlGaN network is formed on sapphire substrate prior to the NWs growth. We find that the ledges of this kinked shaped network act as nucleation sites for the NW growth. The present observations suggest that availability of nucleation sites and higher substrate temperature during growth are the key parameters for the growth of homogeneous AlGaN NWs on the sapphire substrates. Energy dispersive x-ray spectroscopy, high-resolution transmission electron microscopy, Raman spectroscopy, x-ray diffraction, photoluminescence spectroscopy, and scanning electron microscopy analysis show that AlGaN NWs exhibit near-atomic scale compositional uniformity along the length as well as across the diameter.
Collapse
Affiliation(s)
- Ritam Sarkar
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India
| | | | | | | | | | | |
Collapse
|
32
|
UV light assisted antibiotics for eradication of in vitro biofilms. Sci Rep 2018; 8:16360. [PMID: 30397224 PMCID: PMC6218519 DOI: 10.1038/s41598-018-34340-8] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2018] [Accepted: 10/09/2018] [Indexed: 11/08/2022] Open
Abstract
The overuse of antibiotics is accelerating the bacterial resistance, and therefore there is a need to reduce the amount of antibiotics used for treatment. Here, we demonstrate in vitro that specific wavelengths in a narrow range around 296 nm are able to eradicate bacteria in the biofilm state (grown for 24 hours) more effectively, than antibiotics and the combination of irradiation and antibiotics is even better, introducing a novel concept light assisted antibiotics. The investigated wavelength range was 249 nm to 338 nm with an approximate step of 5 nm. The novel concept that consists of a UV irradiation treatment followed by a tobramycin treatment can significantly reduce the amount of antibiotics needed for eradicating mature bacterial biofilms. The efficiency of the proposed light assisted antibiotics method was compared to combinatory antibiotic treatment and highly concentrated antibiotic monotherapy. The eradication efficacies, on mature biofilms, achieved by light assisted antibiotic and by the antibiotic monotherapy at approximately 10-fold higher concentration, were equivalent. The present achievement could motivate the development of light assisted antibiotic treatments for treating infections.
Collapse
|
33
|
Zhao C, Ebaid M, Zhang H, Priante D, Janjua B, Zhang D, Wei N, Alhamoud AA, Shakfa MK, Ng TK, Ooi BS. Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters. NANOSCALE 2018; 10:15980-15988. [PMID: 29897082 DOI: 10.1039/c8nr02615g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott-Schottky experiments measured a hole concentration of 1.3 × 1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.
Collapse
Affiliation(s)
- Chao Zhao
- King Abdullah University of Science and Technology (KAUST), Photonics Laboratory, Thuwal 23955-6900, Saudi Arabia.
| | | | | | | | | | | | | | | | | | | | | |
Collapse
|
34
|
Jeon N, Ruhstorfer D, Döblinger M, Matich S, Loitsch B, Koblmüller G, Lauhon L. Connecting Composition-Driven Faceting with Facet-Driven Composition Modulation in GaAs-AlGaAs Core-Shell Nanowires. NANO LETTERS 2018; 18:5179-5185. [PMID: 29995425 DOI: 10.1021/acs.nanolett.8b02104] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Ternary III-V alloys of tunable bandgap are a foundation for engineering advanced optoelectronic devices based on quantum-confined structures including quantum wells, nanowires, and dots. In this context, core-shell nanowires provide useful geometric degrees of freedom in heterostructure design, but alloy segregation is frequently observed in epitaxial shells even in the absence of interface strain. High-resolution scanning transmission electron microscopy and laser-assisted atom probe tomography were used to investigate the driving forces of segregation in nonplanar GaAs-AlGaAs core-shell nanowires. Growth-temperature-dependent studies of Al-rich regions growing on radial {112} nanofacets suggest that facet-dependent bonding preferences drive the enrichment, rather than kinetically limited diffusion. Observations of the distinct interface faceting when pure AlAs is grown on GaAs confirm the preferential bonding of Al on {112} facets over {110} facets, explaining the decomposition behavior. Furthermore, three-dimensional composition profiles generated by atom probe tomography reveal the presence of Al-rich nanorings perpendicular to the growth direction; correlated electron microscopy shows that short zincblende insertions in a nanowire segment with predominantly wurtzite structure are enriched in Al, demonstrating that crystal phase engineering can be used to modulate composition. The findings suggest strategies to limit alloy decomposition and promote new geometries of quantum confined structures.
Collapse
Affiliation(s)
- Nari Jeon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Daniel Ruhstorfer
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Garching 85748 , Germany
| | - Markus Döblinger
- Department of Chemistry , Ludwig-Maximilians-Universität München , Munich 81377 , Germany
| | - Sonja Matich
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Garching 85748 , Germany
| | - Bernhard Loitsch
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Garching 85748 , Germany
| | - Gregor Koblmüller
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Garching 85748 , Germany
| | - Lincoln Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| |
Collapse
|
35
|
Siladie AM, Amichi L, Mollard N, Mouton I, Bonef B, Bougerol C, Grenier A, Robin E, Jouneau PH, Garro N, Cros A, Daudin B. Dopant radial inhomogeneity in Mg-doped GaN nanowires. NANOTECHNOLOGY 2018; 29:255706. [PMID: 29620532 DOI: 10.1088/1361-6528/aabbd6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.
Collapse
|
36
|
Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method. Sci Rep 2018; 8:935. [PMID: 29343856 PMCID: PMC5772499 DOI: 10.1038/s41598-017-19047-6] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2016] [Accepted: 12/18/2017] [Indexed: 11/17/2022] Open
Abstract
We report deep ultraviolet (UVC) emitting core-shell-type AlGaN/AlN multiple quantum wells (MQWs) on the AlN nanorods which are prepared by catalyst/lithography free process. The MQWs are grown on AlN nanorods on a sapphire substrate by polarity-selective epitaxy and etching (PSEE) using high-temperature metal organic chemical vapor deposition. The AlN nanorods prepared through PSEE have a low dislocation density because edge dislocations are bent toward neighboring N-polar AlN domains. The core–shell-type MQWs grown on AlN nanorods have three crystallographic orientations, and the final shape of the grown structure is explained by a ball-and-stick model. The photoluminescence (PL) intensity of MQWs grown on AlN nanorods is approximately 40 times higher than that of MQWs simultaneously grown on a planar structure. This result can be explained by increased internal quantum efficiency, large active volume, and increase in light extraction efficiency based on the examination in this study. Among those effects, the increase of active volume on AlN nanorods is considered to be the main reason for the enhancement of the PL intensity.
Collapse
|
37
|
Bolshakov AD, Mozharov AM, Sapunov GA, Shtrom IV, Sibirev NV, Fedorov VV, Ubyivovk EV, Tchernycheva M, Cirlin GE, Mukhin IS. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2018; 9:146-154. [PMID: 29441260 PMCID: PMC5789400 DOI: 10.3762/bjnano.9.17] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2017] [Accepted: 11/14/2017] [Indexed: 06/08/2023]
Abstract
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5∙1019 cm-3.
Collapse
Affiliation(s)
- Alexey D Bolshakov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101 St. Petersburg, Russia
| | - Alexey M Mozharov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Georgiy A Sapunov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Igor V Shtrom
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
- St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia
| | - Nickolay V Sibirev
- St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia
- Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
| | - Vladimir V Fedorov
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
| | - Evgeniy V Ubyivovk
- St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia
| | - Maria Tchernycheva
- Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, University Paris-Saclay, 91405 Orsay cedex, France
| | - George E Cirlin
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101 St. Petersburg, Russia
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
| | - Ivan S Mukhin
- St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University, Kronverkskij 49, 197101 St. Petersburg, Russia
| |
Collapse
|
38
|
Liu X, Le BH, Woo SY, Zhao S, Pofelski A, Botton GA, Mi Z. Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics. OPTICS EXPRESS 2017; 25:30494-30502. [PMID: 29221077 DOI: 10.1364/oe.25.030494] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2017] [Accepted: 11/12/2017] [Indexed: 06/07/2023]
Abstract
Semiconductor light sources operating in the ultraviolet (UV)-C band (100-280 nm) are in demand for a broad range of applications but suffer from extremely low efficiency. AlGaN nanowire photonic crystals promise to break the efficiency bottleneck of deep UV photonics. We report, for the first time, site-controlled epitaxy of AlGaN nanowire arrays with Al incorporation controllably varied across nearly the entire compositional range. It is also observed that an Al-rich AlGaN shell structure is spontaneously formed, significantly suppressing nonradiative surface recombination. An internal quantum efficiency up to 45% was measured at room-temperature. We have further demonstrated large area AlGaN nanowire LEDs operating in the UV-C band on sapphire substrate, which exhibit excellent optical and electrical performance, including a small turn-on voltage of ~4.4 V and an output power of ~0.93 W/cm2 at a current density of 252 A/cm2. The controlled synthesis of AlGaN subwavelength nanostructures with well-defined size, spacing, and spatial arrangement and tunable emission opens up new opportunities for developing high efficiency LEDs and lasers and promises to break the efficiency bottleneck of deep UV photonics.
Collapse
|
39
|
Bruckbauer J, Li Z, Naresh-Kumar G, Warzecha M, Edwards PR, Jiu L, Gong Y, Bai J, Wang T, Trager-Cowan C, Martin RW. Spatially-resolved optical and structural properties of semi-polar [Formula: see text] Al x Ga 1-x N with x up to 0.56. Sci Rep 2017; 7:10804. [PMID: 28883495 PMCID: PMC5589948 DOI: 10.1038/s41598-017-10923-9] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2017] [Accepted: 08/16/2017] [Indexed: 11/18/2022] Open
Abstract
Pushing the emission wavelength of efficient ultraviolet (UV) emitters further into the deep-UV requires material with high crystal quality, while also reducing the detrimental effects of built-in electric fields. Crack-free semi-polar [Formula: see text] Al x Ga1-x N epilayers with AlN contents up to x = 0.56 and high crystal quality were achieved using an overgrowth method employing GaN microrods on m-sapphire. Two dominant emission peaks were identified using cathodoluminescence hyperspectral imaging. The longer wavelength peak originates near and around chevron-shaped features, whose density is greatly increased for higher contents. The emission from the majority of the surface is dominated by the shorter wavelength peak, influenced by the presence of basal-plane stacking faults (BSFs). Due to the overgrowth technique BSFs are bunched up in parallel stripes where the lower wavelength peak is broadened and hence appears slightly redshifted compared with the higher quality regions in-between. Additionally, the density of threading dislocations in these region is one order of magnitude lower compared with areas affected by BSFs as ascertained by electron channelling contrast imaging. Overall, the luminescence properties of semi-polar AlGaN epilayers are strongly influenced by the overgrowth method, which shows that reducing the density of extended defects improves the optical performance of high AlN content AlGaN structures.
Collapse
Affiliation(s)
- Jochen Bruckbauer
- Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG United Kingdom
| | - Zhi Li
- Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD United Kingdom
| | - G. Naresh-Kumar
- Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG United Kingdom
| | - Monika Warzecha
- Strathclyde Institute of Pharmacy and Biomedical Sciences, University of Strathclyde, Glasgow, G4 0RE United Kingdom
| | - Paul R. Edwards
- Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG United Kingdom
| | - Ling Jiu
- Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD United Kingdom
| | - Yipin Gong
- Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD United Kingdom
| | - Jie Bai
- Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD United Kingdom
| | - Tao Wang
- Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD United Kingdom
| | - Carol Trager-Cowan
- Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG United Kingdom
| | - Robert W. Martin
- Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG United Kingdom
| |
Collapse
|
40
|
|
41
|
Janjua B, Sun H, Zhao C, Anjum DH, Wu F, Alhamoud AA, Li X, Albadri AM, Alyamani AY, El-Desouki MM, Ng TK, Ooi BS. Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy. NANOSCALE 2017; 9:7805-7813. [PMID: 28290591 DOI: 10.1039/c7nr00006e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor >95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ∼303 nm with a narrow full width at half maximum (FWHM) (∼20 nm) of the emission spectrum, are demonstrated using a large active region ("active region/NW length-ratio" ∼50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.
Collapse
Affiliation(s)
- B Janjua
- King Abdullah University of Science and Technology (KAUST), Photonics Laboratory, Thuwal 23955-6900, Saudi Arabia.
| | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
42
|
Laleyan DA, Zhao S, Woo SY, Tran HN, Le HB, Szkopek T, Guo H, Botton GA, Mi Z. AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics. NANO LETTERS 2017; 17:3738-3743. [PMID: 28471682 DOI: 10.1021/acs.nanolett.7b01068] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet (DUV) light sources. Devices operating in the near-UV spectral range have been realized; to date, however, the achievement of high-efficiency light-emitting diodes (LEDs) operating in the UV-C band (200-280 nm specifically) has been hindered by the extremely inefficient p-type conduction in AlGaN and the lack of DUV-transparent conductive electrodes. Here, we show that these critical challenges can be addressed by Mg dopant-free Al(Ga)N/h-BN nanowire heterostructures. By exploiting the acceptor-like boron vacancy formation, we have demonstrated that h-BN can function as a highly conductive, DUV-transparent electrode; the hole concentration is ∼1020 cm-3 at room temperature, which is 10 orders of magnitude higher than that previously measured for Mg-doped AlN epilayers. We have further demonstrated the first Al(Ga)N/h-BN LED, which exhibits strong emission at ∼210 nm. This work also reports the first achievement of Mg-free III-nitride LEDs that can exhibit high electrical efficiency (80% at 20 A/cm2).
Collapse
Affiliation(s)
- David Arto Laleyan
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
- Department of Electrical Engineering and Computer Science, Center for Photonics and Multiscale Nanomaterials, University of Michigan , 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| | - Songrui Zhao
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Steffi Y Woo
- Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University , 1280 Main Street W, Hamilton, Ontario L8S 4M1, Canada
| | - Hong Nhung Tran
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Huy Binh Le
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Thomas Szkopek
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Hong Guo
- Department of Physics, McGill University , 3600 University Street, Montreal, Quebec H3A 2T8, Canada
| | - Gianluigi A Botton
- Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University , 1280 Main Street W, Hamilton, Ontario L8S 4M1, Canada
| | - Zetian Mi
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
- Department of Electrical Engineering and Computer Science, Center for Photonics and Multiscale Nanomaterials, University of Michigan , 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States
| |
Collapse
|
43
|
Hu H, Zhou S, Liu X, Gao Y, Gui C, Liu S. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes. Sci Rep 2017; 7:44627. [PMID: 28294166 PMCID: PMC5353678 DOI: 10.1038/srep44627] [Citation(s) in RCA: 78] [Impact Index Per Article: 11.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2017] [Accepted: 02/10/2017] [Indexed: 11/29/2022] Open
Abstract
We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.
Collapse
Affiliation(s)
- Hongpo Hu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China.,Quantum Wafer Inc., Foshan, 528251, China
| | - Shengjun Zhou
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China.,State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xingtong Liu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China
| | - Yilin Gao
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China
| | - Chengqun Gui
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China
| | - Sheng Liu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072, China
| |
Collapse
|
44
|
Wang X, Wang W, Wang J, Wu H, Liu C. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg Ga δ doping in (AlN) m/(GaN) n superlattice. Sci Rep 2017; 7:44223. [PMID: 28290480 PMCID: PMC5349601 DOI: 10.1038/srep44223] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2016] [Accepted: 02/06/2017] [Indexed: 11/09/2022] Open
Abstract
P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as MgGa δ doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using MgGa δ doping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.
Collapse
Affiliation(s)
- Xiao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Wei Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jingli Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hao Wu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chang Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| |
Collapse
|
45
|
Sadaf SM, Zhao S, Wu Y, Ra YH, Liu X, Vanka S, Mi Z. An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band. NANO LETTERS 2017; 17:1212-1218. [PMID: 28081598 DOI: 10.1021/acs.nanolett.6b05002] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.
Collapse
Affiliation(s)
- S M Sadaf
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - S Zhao
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Y Wu
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Y-H Ra
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - X Liu
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - S Vanka
- Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Z Mi
- Department of Electrical Engineering and Computer Science, Center for Photonics and Multiscale Nanomaterials, University of Michigan , Ann Arbor, Michigan 48109, United States
| |
Collapse
|
46
|
Zhang X, Tu CG, Kiang YW, Yang CC. Structure variation of a sidewall quantum well on a GaN nanorod. NANOTECHNOLOGY 2017; 28:045203. [PMID: 27981946 DOI: 10.1088/1361-6528/28/4/045203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A theoretical model for evaluating the height-dependent variations of quantum well (QW) thickness and In concentration in a sidewall QW of a single- or two-section GaN nanorod (NR) is proposed. By reasonably choosing modeling parameter values, the obtained numerical results are quite consistent with the available experimental data. In particular, the model clearly demonstrates the increasing trends of QW thickness and In concentration with height on a sidewall of a single-section NR. Also, it successfully explains the larger QW thickness and higher In concentration in the upper uniform section, when compared with the lower uniform section, in a two-section NR. In this model, three III-group adatom supply sources are considered for sidewall deposition on a single-section NR, including the downward diffusion of adatoms collected on the slant facets at the NR top, the upward diffusion of adatoms collected on the NR base, and the direct adsorption of atoms on the sidewall from the vapor phase. For a two-section NR, the upward and downward diffusions of adatoms collected on the slant facets of the tapering section between the two uniform sections serve as extra adatom supply sources.
Collapse
Affiliation(s)
- Xu Zhang
- Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou, 450052, People's Republic of China. Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei, 10617 Taiwan
| | | | | | | |
Collapse
|
47
|
Janjua B, Sun H, Zhao C, Anjum DH, Priante D, Alhamoud AA, Wu F, Li X, Albadri AM, Alyamani AY, El-Desouki MM, Ng TK, Ooi BS. Droop-free Al xGa 1-xN/Al yGa 1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates. OPTICS EXPRESS 2017; 25:1381-1390. [PMID: 28158020 DOI: 10.1364/oe.25.001381] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2016] [Accepted: 01/12/2017] [Indexed: 06/06/2023]
Abstract
Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm2 (80 mA in 0.5 × 0.5 mm2 device), a turn-on voltage of ~5.5 V and droop-free behavior up to 120 A/cm2 of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.
Collapse
|
48
|
Liu G, Zhou G, Qin Z, Zhou Q, Zheng R, Wu H, Sun Z. Luminescence characterizations of freestanding bulk single crystalline aluminum nitride towards optoelectronic application. CrystEngComm 2017. [DOI: 10.1039/c7ce01239j] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Freestanding wurtzite aluminum nitride bulk single crystals were massively grown, exhibiting deep UV band edge and broad defect-related emissions.
Collapse
Affiliation(s)
- Ge Liu
- College of Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Guigang Zhou
- College of Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Zhuoyan Qin
- College of Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Qin Zhou
- College of Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Ruisheng Zheng
- College of Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Honglei Wu
- College of Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| | - Zhenhua Sun
- College of Optoelectronic Engineering
- Shenzhen University
- Shenzhen
- China
| |
Collapse
|
49
|
Le BH, Zhao S, Liu X, Woo SY, Botton GA, Mi Z. Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:8446-8454. [PMID: 27489074 DOI: 10.1002/adma.201602645] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2016] [Revised: 07/05/2016] [Indexed: 06/06/2023]
Abstract
Nearly dislocation-free semipolar AlGaN templates are achieved on c-plane sapphire substrate through controlled nanowire coalescence by selective-area epitaxy. The coalesced Mg-doped AlGaN layers exhibit superior charge-carrier-transport properties. Semipolar-AlGaN ultraviolet light-emitting diodes demonstrate excellent performance. This work establishes the use of engineered nanowire structures as a viable architecture to achieve large-area, dislocation-free planar photonic and electronic devices.
Collapse
Affiliation(s)
- Binh H Le
- Department of Electrical and Computer Engineering, McGill University, Montreal, QC, H3A 0E9, Canada
| | - Songrui Zhao
- Department of Electrical and Computer Engineering, McGill University, Montreal, QC, H3A 0E9, Canada
| | - Xianhe Liu
- Department of Electrical and Computer Engineering, McGill University, Montreal, QC, H3A 0E9, Canada
| | - Steffi Y Woo
- Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, ON, L8S 4M1, Canada
| | - Gianluigi A Botton
- Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, ON, L8S 4M1, Canada
| | - Zetian Mi
- Department of Electrical and Computer Engineering, McGill University, Montreal, QC, H3A 0E9, Canada.
| |
Collapse
|
50
|
Rong X, Wang X, Ivanov SV, Jiang X, Chen G, Wang P, Wang W, He C, Wang T, Schulz T, Albrecht M, Jmerik VN, Toropov AA, Ratnikov VV, Kozlovsky VI, Martovitsky VP, Jin P, Xu F, Yang X, Qin Z, Ge W, Shi J, Shen B. High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:7978-7983. [PMID: 27383739 DOI: 10.1002/adma.201600990] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2016] [Revised: 05/22/2016] [Indexed: 06/06/2023]
Abstract
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.
Collapse
Affiliation(s)
- Xin Rong
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xinqiang Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China.
| | - Sergey V Ivanov
- Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, 194021, Russia
| | - Xinhe Jiang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Guang Chen
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Ping Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Weiying Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Chenguang He
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Tao Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Tobias Schulz
- Leibniz Institute for Crystal Growth, Berlin, 12489, Germany
| | - Martin Albrecht
- Leibniz Institute for Crystal Growth, Berlin, 12489, Germany
| | - Valentin N Jmerik
- Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, 194021, Russia
| | - Alexey A Toropov
- Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, 194021, Russia
| | | | - Vladimir I Kozlovsky
- Lebedev Physical Institute, Russian Academy of Sciences, Leninsky pr. 53, Moscow, 119991, Russia
- National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russia
| | - Victor P Martovitsky
- Lebedev Physical Institute, Russian Academy of Sciences, Leninsky pr. 53, Moscow, 119991, Russia
| | - Peng Jin
- Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, CAS, Beijing, 100083, P. R. China
| | - Fujun Xu
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xuelin Yang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Zhixin Qin
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Weikun Ge
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Junjie Shi
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Bo Shen
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China.
| |
Collapse
|