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Zahoor F, Nisar A, Bature UI, Abbas H, Bashir F, Chattopadhyay A, Kaushik BK, Alzahrani A, Hussin FA. An overview of critical applications of resistive random access memory. NANOSCALE ADVANCES 2024:d4na00158c. [PMID: 39263252 PMCID: PMC11382421 DOI: 10.1039/d4na00158c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Accepted: 08/10/2024] [Indexed: 09/13/2024]
Abstract
The rapid advancement of new technologies has resulted in a surge of data, while conventional computers are nearing their computational limits. The prevalent von Neumann architecture, where processing and storage units operate independently, faces challenges such as data migration through buses, leading to decreased computing speed and increased energy loss. Ongoing research aims to enhance computing capabilities through the development of innovative chips and the adoption of new system architectures. One noteworthy advancement is Resistive Random Access Memory (RRAM), an emerging memory technology. RRAM can alter its resistance through electrical signals at both ends, retaining its state even after power-down. This technology holds promise in various areas, including logic computing, neural networks, brain-like computing, and integrated technologies combining sensing, storage, and computing. These cutting-edge technologies offer the potential to overcome the performance limitations of traditional architectures, significantly boosting computing power. This discussion explores the physical mechanisms, device structure, performance characteristics, and applications of RRAM devices. Additionally, we delve into the potential future adoption of these technologies at an industrial scale, along with prospects and upcoming research directions.
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Affiliation(s)
- Furqan Zahoor
- Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia
| | - Arshid Nisar
- Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee India
| | - Usman Isyaku Bature
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas Malaysia
| | - Haider Abbas
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University Seoul 143-747 Republic of Korea
| | - Faisal Bashir
- Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia
| | - Anupam Chattopadhyay
- College of Computing and Data Science, Nanyang Technological University 639798 Singapore
| | - Brajesh Kumar Kaushik
- Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee India
| | - Ali Alzahrani
- Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia
| | - Fawnizu Azmadi Hussin
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas Malaysia
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Choi H, Park J, Lee J, Sim D. Review on spiking neural network-based ECG classification methods for low-power environments. Biomed Eng Lett 2024; 14:917-941. [PMID: 39220032 PMCID: PMC11362428 DOI: 10.1007/s13534-024-00391-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Revised: 04/17/2024] [Accepted: 05/05/2024] [Indexed: 09/04/2024] Open
Abstract
This paper reviews arrhythmia classification studies using electrocardiogram (ECG) signals. Research on automatically diagnosing arrhythmia in daily life has been actively underway for early detection and treatment of heart disease. Development of automatic arrhythmia classification using ECG signal began based on handcrafted morphological feature extraction and machine learning-based classification methods. As deep neural networks (DNN) show excellent performance in the signal processing field, studies using various types of DNN are also being conducted in ECG classification. However, these DNN-based studies have extremely high computational complexity, making it challenging to perform real-time classification, and are unsuitable for low-power environments such as wearable devices due to high power consumption. Currently, research based on spiking neural network (SNN), which mimics the low-power operation of the human nervous system, is attracting attention as a method that can dramatically reduce complexity and power consumption. The classification accuracy of the SNN-based ECG classification studies is close to that of the DNN-based studies. When combined with neuromorphic hardware, it shows ultra-low-power performance, suggesting the possibility of use in lightweight devices. In this paper, the SNN-based ECG classification studies for low-power environments are mainly reviewed, and prior to this, conventional and DNN-based ECG classification studies are also reviewed. We hope that this review will be helpful to researchers and engineers interested in the field of ECG classification.
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Affiliation(s)
- Hansol Choi
- Department of Computer Engineering, Kwangwoon University, Seoul, Korea
| | - Jangsoo Park
- Department of Computer Engineering, Kwangwoon University, Seoul, Korea
| | - Jongseok Lee
- Department of Computer Engineering, Kwangwoon University, Seoul, Korea
| | - Donggyu Sim
- Department of Computer Engineering, Kwangwoon University, Seoul, Korea
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Guo Y, Lv M, Wang C, Ma J. Energy controls wave propagation in a neural network with spatial stimuli. Neural Netw 2024; 171:1-13. [PMID: 38091753 DOI: 10.1016/j.neunet.2023.11.042] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Revised: 10/16/2023] [Accepted: 11/19/2023] [Indexed: 01/29/2024]
Abstract
Nervous system has distinct anisotropy and some intrinsic biophysical properties enable neurons present various firing modes in neural activities. In presence of realistic electromagnetic fields, non-uniform radiation activates these neurons with energy diversity. By using a feasible model, energy function is obtained to predict the growth of synaptic connections of these neurons. Distribution of average value of the Hamilton energy function vs. intensity of noisy disturbance can predict the occurrence of coherence resonance, which the neural activities show high regularity by applying noisy disturbance with moderate intensity. From physical viewpoint, the average energy value has similar role average power for the neuron. Non-uniform spatial disturbance is applied and energy is injected into the neural network, statistical synchronization factor is calculated to predict the network synchronization stability and wave propagation. The intensity for field coupling is adaptively controlled by energy diversity between adjacent neurons. Local energy balance will terminate further growth of the coupling intensity; otherwise, heterogeneity is formed in the network due to energy diversity. Furthermore, memristive channel current is introduced into the neuron model for perceiving the effect of electromagnetic induction and radiation, and a memristive neuron is obtained. The circuit implement of memristive circuit depends on the connection to a magnetic flux-controlled memristor into the mentioned neural circuit in an additive branch circuit. The connection and activation of this memristive neural network are controlled under external spatial electromagnetic radiation by capturing enough field energy. Continuous energy collection and exchange generate energy diversity and synaptic connection is created to regulate the synchronous firing patterns and energy balance.
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Affiliation(s)
- Yitong Guo
- College of Electrical and Information Engineering, Lanzhou University of Technology, Lanzhou, 730050, Gansu, PR China
| | - Mi Lv
- Faculty of Engineering, China University of Petroleum-Beijing at Karamay, Karamay, 834000, Xinjiang, PR China
| | - Chunni Wang
- Department of Physics, Lanzhou University of Technology, Lanzhou, 730050, Gansu, PR China.
| | - Jun Ma
- College of Electrical and Information Engineering, Lanzhou University of Technology, Lanzhou, 730050, Gansu, PR China; Department of Physics, Lanzhou University of Technology, Lanzhou, 730050, Gansu, PR China
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Chen H, Li H, Ma T, Han S, Zhao Q. Biological function simulation in neuromorphic devices: from synapse and neuron to behavior. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2183712. [PMID: 36926202 PMCID: PMC10013381 DOI: 10.1080/14686996.2023.2183712] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Revised: 02/06/2023] [Accepted: 02/11/2023] [Indexed: 06/18/2023]
Abstract
As the boom of data storage and processing, brain-inspired computing provides an effective approach to solve the current problem. Various emerging materials and devices have been reported to promote the development of neuromorphic computing. Thereinto, the neuromorphic device represented by memristor has attracted extensive research due to its outstanding property to emulate the brain's functions from synaptic plasticity, sensory-memory neurons to some intelligent behaviors of living creatures. Herein, we mainly review the progress of these brain functions mimicked by neuromorphic devices, concentrating on synapse (i.e. various synaptic plasticity trigger by electricity and/or light), neurons (including the various sensory nervous system) and intelligent behaviors (such as conditioned reflex represented by Pavlov's dog experiment). Finally, some challenges and prospects related to neuromorphic devices are presented.
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Affiliation(s)
- Hui Chen
- Heart Center of Henan Provincial People’s Hospital, Central China Fuwai Hospital, Central China Fuwai Hospital of Zhengzhou University, Zhengzhou, P. R. China
| | - Huilin Li
- Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, P. R. China
| | - Ting Ma
- Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, P. R. China
| | - Shuangshuang Han
- Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, P. R. China
| | - Qiuping Zhao
- Heart Center of Henan Provincial People’s Hospital, Central China Fuwai Hospital, Central China Fuwai Hospital of Zhengzhou University, Zhengzhou, P. R. China
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Lin H, Shen Y. A VO 2 Neuristor Based on Microstrip Line Coupling. MICROMACHINES 2023; 14:337. [PMID: 36838036 PMCID: PMC9961992 DOI: 10.3390/mi14020337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Accepted: 01/23/2023] [Indexed: 06/18/2023]
Abstract
The neuromorphic network based on artificial neurons and synapses can solve computational difficulties, and its energy efficiency is incomparable to the traditional von Neumann architecture. As a new type of circuit component, nonvolatile memristors are very similar to biological synapses in structure and function. Only one memristor can simulate the function of a synapse. Therefore, memristors provide a new way to build hardware-based artificial neural networks. To build such an artificial neural network, in addition to the artificial synapses, artificial neurons are also needed to realize the distribution of information and the adjustment of synaptic weights. As the VO2 volatile local active memristor is complementary to nonvolatile memristors, it can be used to simulate the function of neurons. However, determining how to better realize the function of neurons with simple circuits is one of the current key problems to be solved in this field. This paper considers the influence of distribution parameters on circuit performance under the action of high-frequency and high-speed signals. Two Mott VO2 memristor units are connected and coupled with microstrip lines to simulate the Hodgkin-Huxley neuron model. It is found that the proposed memristor neuron based on microstrip lines shows the characteristics of neuron action potential: amplification and threshold.
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Boriskov P, Velichko A, Shilovsky N, Belyaev M. Bifurcation and Entropy Analysis of a Chaotic Spike Oscillator Circuit Based on the S-Switch. ENTROPY (BASEL, SWITZERLAND) 2022; 24:1693. [PMID: 36421548 PMCID: PMC9689857 DOI: 10.3390/e24111693] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 11/13/2022] [Accepted: 11/17/2022] [Indexed: 06/16/2023]
Abstract
This paper presents a model and experimental study of a chaotic spike oscillator based on a leaky integrate-and-fire (LIF) neuron, which has a switching element with an S-type current-voltage characteristic (S-switch). The oscillator generates spikes of the S-switch in the form of chaotic pulse position modulation driven by the feedback with rate coding instability of LIF neuron. The oscillator model with piecewise function of the S-switch has resistive feedback using a second order filter. The oscillator circuit is built on four operational amplifiers and two field-effect transistors (MOSFETs) that form an S-switch based on a Schmitt trigger, an active RC filter and a matching amplifier. We investigate the bifurcation diagrams of the model and the circuit and calculate the entropy of oscillations. For the analog circuit, the "regular oscillation-chaos" transition is analysed in a series of tests initiated by a step voltage in the matching amplifier. Entropy values are used to estimate the average time for the transition of oscillations to chaos and the degree of signal correlation of the transition mode of different tests. Study results can be applied in various reservoir computing applications, for example, in choosing and configuring the LogNNet network reservoir circuits.
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Li ZX, Geng XY, Wang J, Zhuge F. Emerging Artificial Neuron Devices for Probabilistic Computing. Front Neurosci 2021; 15:717947. [PMID: 34421528 PMCID: PMC8377243 DOI: 10.3389/fnins.2021.717947] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Accepted: 07/19/2021] [Indexed: 11/13/2022] Open
Abstract
In recent decades, artificial intelligence has been successively employed in the fields of finance, commerce, and other industries. However, imitating high-level brain functions, such as imagination and inference, pose several challenges as they are relevant to a particular type of noise in a biological neuron network. Probabilistic computing algorithms based on restricted Boltzmann machine and Bayesian inference that use silicon electronics have progressed significantly in terms of mimicking probabilistic inference. However, the quasi-random noise generated from additional circuits or algorithms presents a major challenge for silicon electronics to realize the true stochasticity of biological neuron systems. Artificial neurons based on emerging devices, such as memristors and ferroelectric field-effect transistors with inherent stochasticity can produce uncertain non-linear output spikes, which may be the key to make machine learning closer to the human brain. In this article, we present a comprehensive review of the recent advances in the emerging stochastic artificial neurons (SANs) in terms of probabilistic computing. We briefly introduce the biological neurons, neuron models, and silicon neurons before presenting the detailed working mechanisms of various SANs. Finally, the merits and demerits of silicon-based and emerging neurons are discussed, and the outlook for SANs is presented.
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Affiliation(s)
- Zong-xiao Li
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Xiao-ying Geng
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang, China
| | - Jingrui Wang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo, China
| | - Fei Zhuge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
- Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai, China
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Yi W, Tsang KK, Lam SK, Bai X, Crowell JA, Flores EA. Biological plausibility and stochasticity in scalable VO 2 active memristor neurons. Nat Commun 2018; 9:4661. [PMID: 30405124 PMCID: PMC6220189 DOI: 10.1038/s41467-018-07052-w] [Citation(s) in RCA: 165] [Impact Index Per Article: 23.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2018] [Accepted: 10/11/2018] [Indexed: 11/09/2022] Open
Abstract
Neuromorphic networks of artificial neurons and synapses can solve computationally hard problems with energy efficiencies unattainable for von Neumann architectures. For image processing, silicon neuromorphic processors outperform graphic processing units in energy efficiency by a large margin, but deliver much lower chip-scale throughput. The performance-efficiency dilemma for silicon processors may not be overcome by Moore's law scaling of silicon transistors. Scalable and biomimetic active memristor neurons and passive memristor synapses form a self-sufficient basis for a transistorless neural network. However, previous demonstrations of memristor neurons only showed simple integrate-and-fire behaviors and did not reveal the rich dynamics and computational complexity of biological neurons. Here we report that neurons built with nanoscale vanadium dioxide active memristors possess all three classes of excitability and most of the known biological neuronal dynamics, and are intrinsically stochastic. With the favorable size and power scaling, there is a path toward an all-memristor neuromorphic cortical computer.
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Affiliation(s)
- Wei Yi
- HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, CA, 90265, USA.
| | - Kenneth K Tsang
- HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, CA, 90265, USA
| | - Stephen K Lam
- HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, CA, 90265, USA
| | - Xiwei Bai
- HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, CA, 90265, USA
| | - Jack A Crowell
- HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, CA, 90265, USA
| | - Elias A Flores
- HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, CA, 90265, USA
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Jeong DS, Hwang CS. Nonvolatile Memory Materials for Neuromorphic Intelligent Machines. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1704729. [PMID: 29667255 DOI: 10.1002/adma.201704729] [Citation(s) in RCA: 66] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2017] [Revised: 01/18/2018] [Indexed: 06/08/2023]
Abstract
Recent progress in deep learning extends the capability of artificial intelligence to various practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis. While such DNN is virtually built on contemporary data centers of the von Neumann architecture, physical (in part) DNN of non-von Neumann architecture, also known as neuromorphic computing, can remarkably improve learning and inference efficiency. Particularly, resistance-based nonvolatile random access memory (NVRAM) highlights its handy and efficient application to the multiply-accumulate (MAC) operation in an analog manner. Here, an overview is given of the available types of resistance-based NVRAMs and their technological maturity from the material- and device-points of view. Examples within the strategy are subsequently addressed in comparison with their benchmarks (virtual DNN in deep learning). A spiking neural network (SNN) is another type of neural network that is more biologically plausible than the DNN. The successful incorporation of resistance-based NVRAM in SNN-based neuromorphic computing offers an efficient solution to the MAC operation and spike timing-based learning in nature. This strategy is exemplified from a material perspective. Intelligent machines are categorized according to their architecture and learning type. Also, the functionality and usefulness of NVRAM-based neuromorphic computing are addressed.
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Affiliation(s)
- Doo Seok Jeong
- Center for Electronic Materials, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, South Korea
| | - Cheol Seong Hwang
- Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151-744, Republic of Korea
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Neural-like computing with populations of superparamagnetic basis functions. Nat Commun 2018; 9:1533. [PMID: 29670101 PMCID: PMC5906599 DOI: 10.1038/s41467-018-03963-w] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2017] [Accepted: 03/26/2018] [Indexed: 11/18/2022] Open
Abstract
In neuroscience, population coding theory demonstrates that neural assemblies can achieve fault-tolerant information processing. Mapped to nanoelectronics, this strategy could allow for reliable computing with scaled-down, noisy, imperfect devices. Doing so requires that the population components form a set of basis functions in terms of their response functions to inputs, offering a physical substrate for computing. Such a population can be implemented with CMOS technology, but the corresponding circuits have high area or energy requirements. Here, we show that nanoscale magnetic tunnel junctions can instead be assembled to meet these requirements. We demonstrate experimentally that a population of nine junctions can implement a basis set of functions, providing the data to achieve, for example, the generation of cursive letters. We design hybrid magnetic-CMOS systems based on interlinked populations of junctions and show that they can learn to realize non-linear variability-resilient transformations with a low imprint area and low power. Population coding, where populations of artificial neurons process information collectively can facilitate robust data processing, but require high circuit overheads. Here, the authors realize this approach with reduced circuit area and power consumption, by utilizing superparamagnetic tunnel junction based neurons.
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Kornijcuk V, Lim H, Seok JY, Kim G, Kim SK, Kim I, Choi BJ, Jeong DS. Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator. Front Neurosci 2016; 10:212. [PMID: 27242416 PMCID: PMC4876293 DOI: 10.3389/fnins.2016.00212] [Citation(s) in RCA: 43] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2015] [Accepted: 04/26/2016] [Indexed: 11/13/2022] Open
Abstract
The artificial spiking neural network (SNN) is promising and has been brought to the notice of the theoretical neuroscience and neuromorphic engineering research communities. In this light, we propose a new type of artificial spiking neuron based on leaky integrate-and-fire (LIF) behavior. A distinctive feature of the proposed FG-LIF neuron is the use of a floating-gate (FG) integrator rather than a capacitor-based one. The relaxation time of the charge on the FG relies mainly on the tunnel barrier profile, e.g., barrier height and thickness (rather than the area). This opens up the possibility of large-scale integration of neurons. The circuit simulation results offered biologically plausible spiking activity (<100 Hz) with a capacitor of merely 6 fF, which is hosted in an FG metal-oxide-semiconductor field-effect transistor. The FG-LIF neuron also has the advantage of low operation power (<30 pW/spike). Finally, the proposed circuit was subject to possible types of noise, e.g., thermal noise and burst noise. The simulation results indicated remarkable distributional features of interspike intervals that are fitted to Gamma distribution functions, similar to biological neurons in the neocortex.
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Affiliation(s)
- Vladimir Kornijcuk
- Center for Electronic Materials, Korea Institute of Science and TechnologySeoul, South Korea
- Department of Materials Science and Engineering, Seoul National University of Science and TechnologySeoul, South Korea
| | - Hyungkwang Lim
- Center for Electronic Materials, Korea Institute of Science and TechnologySeoul, South Korea
- Department of Materials Science and Engineering, Seoul National UniversitySeoul, South Korea
| | - Jun Yeong Seok
- Center for Electronic Materials, Korea Institute of Science and TechnologySeoul, South Korea
- Department of Materials Science and Engineering, Seoul National UniversitySeoul, South Korea
| | - Guhyun Kim
- Center for Electronic Materials, Korea Institute of Science and TechnologySeoul, South Korea
- Department of Materials Science and Engineering, Seoul National UniversitySeoul, South Korea
| | - Seong Keun Kim
- Center for Electronic Materials, Korea Institute of Science and TechnologySeoul, South Korea
| | - Inho Kim
- Center for Electronic Materials, Korea Institute of Science and TechnologySeoul, South Korea
| | - Byung Joon Choi
- Department of Materials Science and Engineering, Seoul National University of Science and TechnologySeoul, South Korea
| | - Doo Seok Jeong
- Center for Electronic Materials, Korea Institute of Science and TechnologySeoul, South Korea
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Lim H, Ahn HW, Kornijcuk V, Kim G, Seok JY, Kim I, Hwang CS, Jeong DS. Relaxation oscillator-realized artificial electronic neurons, their responses, and noise. NANOSCALE 2016; 8:9629-9640. [PMID: 27103542 DOI: 10.1039/c6nr01278g] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
A proof-of-concept relaxation oscillator-based leaky integrate-and-fire (ROLIF) neuron circuit is realized by using an amorphous chalcogenide-based threshold switch and non-ideal operational amplifier (op-amp). The proposed ROLIF neuron offers biologically plausible features such as analog-type encoding, signal amplification, unidirectional synaptic transmission, and Poisson noise. The synaptic transmission between pre- and postsynaptic neurons is achieved through a passive synapse (simple resistor). The synaptic resistor coupled to the non-ideal op-amp realizes excitatory postsynaptic potential (EPSP) evolution that evokes postsynaptic neuron spiking. In an attempt to generalize our proposed model, we theoretically examine ROLIF neuron circuits adopting different non-ideal op-amps having different gains and slew rates. The simulation results indicate the importance of gain in postsynaptic neuron spiking, irrespective of the slew rate (as long as the rate exceeds a particular value), providing the basis for the ROLIF neuron circuit design. Eventually, the behavior of a postsynaptic neuron in connection to multiple presynaptic neurons via synapses is highlighted in terms of EPSP evolution amid simultaneously incident asynchronous presynaptic spikes, which in fact reveals an important role of the random noise in spatial integration.
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Affiliation(s)
- Hyungkwang Lim
- Center for Electronic Materials, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, 02792 Seoul, Republic of Korea.
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Ignatov M, Ziegler M, Hansen M, Petraru A, Kohlstedt H. A memristive spiking neuron with firing rate coding. Front Neurosci 2015; 9:376. [PMID: 26539074 PMCID: PMC4611138 DOI: 10.3389/fnins.2015.00376] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2015] [Accepted: 09/28/2015] [Indexed: 11/13/2022] Open
Abstract
Perception, decisions, and sensations are all encoded into trains of action potentials in the brain. The relation between stimulus strength and all-or-nothing spiking of neurons is widely believed to be the basis of this coding. This initiated the development of spiking neuron models; one of today's most powerful conceptual tool for the analysis and emulation of neural dynamics. The success of electronic circuit models and their physical realization within silicon field-effect transistor circuits lead to elegant technical approaches. Recently, the spectrum of electronic devices for neural computing has been extended by memristive devices, mainly used to emulate static synaptic functionality. Their capabilities for emulations of neural activity were recently demonstrated using a memristive neuristor circuit, while a memristive neuron circuit has so far been elusive. Here, a spiking neuron model is experimentally realized in a compact circuit comprising memristive and memcapacitive devices based on the strongly correlated electron material vanadium dioxide (VO2) and on the chemical electromigration cell Ag/TiO2−x/Al. The circuit can emulate dynamical spiking patterns in response to an external stimulus including adaptation, which is at the heart of firing rate coding as first observed by E.D. Adrian in 1926.
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Affiliation(s)
- Marina Ignatov
- Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel Kiel, Germany
| | - Martin Ziegler
- Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel Kiel, Germany
| | - Mirko Hansen
- Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel Kiel, Germany
| | - Adrian Petraru
- Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel Kiel, Germany
| | - Hermann Kohlstedt
- Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel Kiel, Germany
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