Universal electronic structure of polar oxide hetero-interfaces

Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces

The ability to tailor oxide heterointerfaces has led to novel properties in low-dimensional oxide systems. A fundamental understanding of these properties is based on the concept of electronic charge transfer. However, the electronic properties of oxide heterointerfaces crucially depend on their ionic constitution and defect structure: ionic charges contribute to charge transfer and screening at oxide interfaces, triggering a thermodynamic balance of ionic and electronic structures. Quantitative understanding of the electronic and ionic roles regarding charge-transfer phenomena poses a central challenge. Here, the electronic and ionic structure is simultaneously investigated at the prototypical charge-transfer heterointerface, LaAlO₃ /SrTiO₃ . Applying in situ photoemission spectroscopy under oxygen ambient, ionic and electronic charge transfer is deconvoluted in response to the oxygen atmosphere at elevated temperatures. In this way, both the rich and variable chemistry of complex oxides and the associated electronic properties are equally embraced. The interfacial electron gas is depleted through an ionic rearrangement in the strontium cation sublattice when oxygen is applied, resulting in an inverse and reversible balance between cation vacancies and electrons, while the mobility of ionic species is found to be considerably enhanced as compared to the bulk. Triggered by these ionic phenomena, the electronic transport and magnetic signature of the heterointerface are significantly altered.

Tailoring of Interfacial Band Offsets by an Atomically Thin Polar Insulating Layer To Enhance the Water-Splitting Performance of Oxide Heterojunction Photoanodes

An important factor in the performance of photoelectrochemical water splitting is the band edge alignment of the photoelectrodes for efficient transport and transfer of photogenerated carriers. Many studies for improving charge transfer ability between the electrode and the electrolyte have been reported, while research to improve charge transfer at the interface of the photoactive semiconductor and the conducting substrate is largely lacking. Here, we demonstrate that the water-splitting performance of an oxide heterostructured photoelectrode can be increased 6-fold by inserting an atomically thin polar LaAlO₃ interlayer compared with that of an oxide heterostructure without an insertion to modify interfacial band offsets. The electrically lowered Schottky barrier is driven by the atomically thin layer, and the charge transfer resistance between the oxides is reduced by up to 2 orders of magnitude upon insertion of LaAlO₃, a wide-gap (5.6 eV) insulator. We show that the critical thickness of the polar layer for enhancing the charge transfer is 3 unit cells. The dipole moment from the polar sheets of LaAlO₃ introduces an internal electric field, which modifies the effective band offsets in the device. This work serves as a proof of concept that photoelectrochemical performance can be improved by manipulating the band offsets of the heterostructure interface, suggesting a new design strategy for heterostructured water-splitting photoelectrodes.

Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO2(001) Anatase Thin Films

We report the study of anatase TiO₂(001)-oriented thin films grown by pulsed laser deposition on LaAlO₃(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti³⁺-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti³⁺ electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti³⁺ only in a well-defined range of deposition pressure; outside this range, Ti³⁺ and the strength of the in-gap states are reduced.

Tuning Up or Down the Critical Thickness in LaAlO3 /SrTiO3 through In Situ Deposition of Metal Overlayers

The quasi 2D electron system (q2DES) that forms at the interface between LaAlO₃ and SrTiO₃ has attracted much attention from the oxide electronics community. One of its hallmark features is the existence of a critical LaAlO₃ thickness of 4 unit-cells (uc) for interfacial conductivity to emerge. In this paper, the chemical, electronic, and transport properties of LaAlO₃ /SrTiO₃ samples capped with different metals grown in a system combining pulsed laser deposition, sputtering, and in situ X-ray photoemission spectroscopy are investigated. The results show that for metals with low work function a q2DES forms at 1-2 uc of LaAlO₃ and is accompanied by a partial oxidation of the metal, a phenomenon that affects the q2DES properties and triggers the formation of defects. In contrast, for noble metals, the critical thickness is increased above 4 uc. The results are discussed in terms of a hybrid mechanism that incorporates electrostatic and chemical effects.