Oxidative Etching of Hexagonal Boron Nitride Toward Nanosheets with Defined Edges and Holes

Synergistic Catalytic Effect of Ag and MgO Nanoparticles Supported on Defective BN Surface in CO Oxidation Reaction

Micron-sized supports of catalytically active nanoparticles (NPs) can become a good alternative to nanocarriers if their structure is properly tuned. Here, we show that a combination of simple and easily scalable methods, such as defect engineering and polyol synthesis, makes it possible to obtain Ag and MgO nanoparticles supported on defective hexagonal BN (h-BN) support with high catalytic activity in the CO oxidation reaction. High-temperature annealing in air of Mg-containing (<0.2 at.%) h-BN micropellets led to surface oxidation, the formation of hexagonal-shaped surface defects, and defect-related MgO NPs. The enhanced catalytic activity of Ag/MgO/h-BN materials is attributed to the synergistic effect of h-BN surface defects, ultrafine Ag and MgO NPs anchored at the defect edges, and MgO/Ag heterostructures. In addition, theoretical simulations show a shift in the electron density from metallic Ag towards MgO and the associated decrease in the negative charge of oxygen adsorbed on the Ag surface, which positively affects the catalytic activity of the Ag/MgO/h-BN material.

Surface etching and edge control of hexagonal boron nitride assisted by triangular Sn nanoplates

Hexagonal boron nitride (hBN) is an ideal insulating substrate and template for other two-dimensional (2D) materials. The combination of hBN and 2D materials of group IV atoms, such as graphene, is interesting, because it can offer attractive physical properties and promising applications. Here, we demonstrate the unique behavior of tin (Sn), one of the group IV elements, on multilayer hBN which was grown by chemical vapor deposition (CVD). At high temperatures, triangular nanoplates formed after thermal deposition of Sn on the hBN surface, with their orientations determined by the hBN lattice. The triangular Sn nanoplates moved on the hBN surface, leaving monolayer-deep nanotrenches. Low-energy electron microscopy (LEEM) revealed that the nanotrenches are aligned in the armchair directions of the hBN. Furthermore, an additional Ar annealing without supplying Sn vapor induced the structural change of the linear trenches to triangular pits, indicating the preferential formation of zigzag edges in the absence of Sn. Our work highlights the unique behavior of Sn on hBN and offers a novel route to engineer the hBN surface.

Oxidative Strong Metal-Support Interactions between Metals and Inert Boron Nitride

The strong metal-support interaction (SMSI) is one of the most important concepts in heterogeneous catalysis, which has been widely investigated between metals and active oxides triggered by reductive atmospheres. Here, we report the oxidative strong metal-support interaction (O-SMSI) effect between Pt nanoparticles (NPs) and inert hexagonal boron nitride (h-BN) sheets, in which Pt NPs are encapsulated by oxidized boron (BO_x) overlayers derived from the h-BN support under oxidative conditions. De-encapsulation of Pt NPs has been achieved by washing in water, and the residual ultrathin BO_x overlayers work synergistically with surface Pt sites for enhancing CO oxidation reaction. The O-SMSI effect is also present in other h-BN-supported metal catalysts such as Au, Rh, Ru, and Ir within different oxidative atmospheres including O₂ and CO₂, which is determined by metal-boron interaction and O affinity of metals.

Reaction-Induced Strong Metal-Support Interactions between Metals and Inert Boron Nitride Nanosheets

Encapsulation of metal nanocatalysts by support-derived materials is well known as a classical strong metal-support interaction (SMSI) effect that occurs almost exclusively with active oxide supports and often blocks metal-catalyzed surface reactions. In the present work this classical SMSI process has been surprisingly observed between metal nanoparticles, e.g., Ni, Fe, Co, and Ru, and inert hexagonal boron nitride (h-BN) nanosheets. We find that weak oxidizing gases such as CO₂ and H₂O induce the encapsulation of nickel (Ni) nanoparticles by ultrathin boron oxide (BO_x) overlayers derived from the h-BN support (Ni@BO_x/h-BN) during the dry reforming of methane (DRM) reaction. In-situ surface characterization and theory calculations reveal that surface B-O and B-OH sites in the formed BO_x encapsulation overlayers work synergistically with surface Ni sites to promote the DRM process rather than blocking the surface reactions.

DFT studies on the reaction mechanism for the selective oxidative dehydrogenation of light alkanes by BN catalysts

The oxidative dehydrogenation (ODH) reaction mechanism of ethane and propane catalyzed by two kinds of oxygen-species-terminated BN materials, namely BN nanotubes and h-BN, was studied by the B3LYP-D3 functional with the 6-31G(d,p) basis set.

Strain-Guided Oxidative Nanoperforation on Graphene

Increased applications of nanoporous graphene in nanoelectronics and membrane separations require ordered and precise perforation of graphene, whose scalablility and time/cost effectiveness represent a significant challenge in existing nanoperforation methods, such as catalytical etching and lithography. A strain-guided perforation of graphene through oxidative etching is reported, where nanopores nucleate selectively at the bulges induced by the prepatterned nanoprotrusions underneath. Using reactive molecular dynamics and theoretical models, the perforation mechanisms are uncovered through the relationship between bulge-induced strain and enhanced etching reactivity. Parallel experiments of chemical vapor deposition (CVD) of graphene on SiO₂ NPs/SiO₂ substrates verify the feasibility of such strain-guided perforation and evolution of pore size by exposure of varied durations to oxygen plasma. This scalable method can be feasibly applied to a broad variety of 2D materials (e.g., graphene and h-boron nitride) and nanoprotrusions (e.g., SiO₂ and C₆₀ nanoparticles), allowing rational fabrication of 2D material-based devices.

Serendipity in Catalysis Research: Boron-Based Materials for Alkane Oxidative Dehydrogenation

Light olefins such as ethylene and propylene form the foundation of the modern chemical industry, with yearly production volumes well into the hundreds of millions of metric tons. Currently, these light olefins are mainly produced via energy-intensive steam cracking. Alternatively, oxidative dehydrogenation (ODH) of light alkanes to produce olefins allows for lower operation temperatures and extended catalyst lifetimes, potentially leading to valuable process efficiencies. The potential benefits of this route have led to significant research interest due to the wide availability of natural gas from shale deposits. Advances in this area have still not yielded catalysts that are sufficiently selective to olefins for industrial implementation, and ODH still remains a holy grail of selective alkane oxidation research. The main challenge in selective oxidation lies in preventing the overoxidation of the desired product, such as propylene during propane oxidation, to CO and CO₂. Research into selective heterogeneous catalysts for the oxidative dehydrogenation of propane has led to the extensive use of vanadium oxide-based catalysts, and studies on the surface mechanism involved have been used to improve the catalytic activity of the material. Despite decades of research, however, selectivity toward propylene has not proven satisfactory at industrially relevant conversions. It is imperative for new catalytic systems that minimize product overoxidation to be developed for future applications of oxidative dehydrogenation processes. While rational catalyst design has been successful in developing homogeneous catalyst systems, its practical use in heterogeneous catalyst development remains modest. The complexity of surfaces with a variety of terminations and bulk structures, let alone their modification by the chemical potential of a reaction mixture, makes heterogeneous catalyst discovery serendipitous in many cases. The catalyst family presented in this Account is no exception. The importance of catalysis research lies in exploring the science behind serendipity. In this Account, we will first present our initial discovery of boron nitride (BN) as an unexpected catalyst for the oxidative dehydrogenation of light alkanes. Beyond its surprising activity, BN also drew interest due to its low selectivity to carbon oxides. This observation made BN distinct from previously studied metal oxide catalysts for selective alkane oxidation. We narrowed down its unique reactivity to the oxygen functionalization of the catalyst surface, particularly the formation of B-O species as probed by various spectroscopic techniques. In investigating the critical role of each of the structural elements during ODH, we discovered that not only BN but an entire class of boron-containing compounds are active and selective for the formation of propylene from propane. All these materials form a complex oxidized surface with a distribution of BO _x surface sites. This discovery opens the doors to a new field of boron-based oxidation chemistry that currently has more questions than answers. We aim to make this Account a starting point for the research community to explore these new materials to understand their surface mechanisms and the surface species that offer a unique selectivity toward olefinic products. Effective use of these materials may lead to novel processes for efficient use of abundant light alkane resources by oxidation chemistry.

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials

Hexagonal boron nitride (h-BN) is considered an ideal template for electronics based on two-dimensional (2D) materials, owing to its unique properties as a dielectric film. Most studies involving h-BN and its application to electronics have focused on its synthesis using techniques such as chemical vapor deposition, the electrical analysis of its surface state, and the evaluation of its performance. Meanwhile, processing techniques including etching methods have not been widely studied despite their necessity for device fabrication processes. In this study, we propose the atomic-scale etching of h-BN for integration into devices based on 2D materials, using Ar plasma at room temperature. A controllable etching rate, less than 1 nm min-1, was achieved and the low reactivity of the Ar plasma enabled the atomic-scale etching of h-BN down to a monolayer in this top-down approach. Based on the h-BN etching technique for achieving electrical contact with the underlying molybdenum disulfide (MoS2) layer of an h-BN/MoS2 heterostructure, a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric was fabricated and characterized by high electrical performance based on the on/off current ratio and carrier mobility.

Structural transformation of h-BN overlayers on Pt(111) in oxidative atmospheres

Interaction of hexagonal boron nitride (h-BN) with gases is of great importance for its properties and applications. In the present work, the structural changes of h-BN overlayers on Pt(111) in oxidative atmospheres including O2 and NO2 have been investigated by using low energy electron microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy (XPS), and near ambient pressure XPS. We find that h-BN islands can be intercalated by oxygen in 10-6 Torr O2 at 200 °C, while oxygen intercalation of full layer h-BN around 200 °C requires near ambient pressure O2 (0.1 Torr) or such a strong oxidant as NO2 (10-6 Torr). h-BN overlayers can be etched away in the gases at much high temperatures, e.g. 800 °C. Upon mild oxidation in O2 or NO2 at temperatures of 400-450 °C, h-BN is transformed to boron oxide (BOx) overlayers, which can be converted back to h-BN by heating in NH3 at 800 °C.

Catalytic Directional Cutting of Hexagonal Boron Nitride: The Roles of Interface and Etching Agents

Transition-metal (TM) nanoparticle catalyzed cutting has been proven to be an efficient approach to carve out straight channels in graphene to produce high-quality nanoribbons. However, the applicability of such a catalytic approach to hexagonal boron nitride (h-BN) is still an open question due to binary element compositions. Here, our ab initio study indicates that long and straight channels along either the zigzag or the armchair direction of the BN sheet can be carved out, driven by the energetically favored TM-zigzag or TM-armchair BN interface, regardless of roughness of the TM particle surface. Optimal experimental conditions for the catalytic cutting of either BN or BN/graphene hybrid sheet across the domain boundary are proposed via the analysis of the competition between TM-BN (or TM-graphene) interface and H-terminated BN (or graphene) edge. The computation results can serve to guide the experimental design for the production of highly uniform BN (or hybrid BN/graphene) nanoribbons with atomically smooth edges.

Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials

A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology, is of paramount importance in realizing all-two-dimensional logic circuits and to move beyond the silicon scaling limit. In this letter, we demonstrate a scalable and highly controllable microwave plasma based layer engineering strategy for MoS₂ and other vW materials. Using this technique we etch MoS₂ flakes layer-by-layer starting from an arbitrary thickness and area down to the mono- or the few-layer limit. From Raman spectroscopy, atomic force microscopy, photoluminescence spectroscopy, scanning electron microscopy and transmission electron microscopy, we confirm that the structural and morphological properties of the material have not been compromised. The process preserves the pre-etch layer topography and yields a smooth and pristine-like surface. We explore the electrical properties utilising a field effect transistor geometry and find that the mobility values of our samples are comparable to those of the pristine ones. The layer removal does not involve any reactive gasses or chemical reactions and relies on breaking the weak inter-layer vW interaction making it a generic technique for a wide spectrum of layered materials and heterostructures. We demonstrate the wide applicability of the technique by extending it to other systems such as graphene, h-BN and WSe₂. In addition, using microwave plasma in combination with standard lithography, we illustrate a lateral patterning scheme making this process a potential candidate for large scale device fabrication in addition to layer engineering.

High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector

We extend our work on the use of digitally controlled pulsed laser plasma deposition (PLPD) technique to synthesize high quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temperature for applications in high-performance deep UV photodetectors. The obtained sample consists of a large amount of BNNSs partially overlapping one another with random orientations. Each sheet is composed of a few (from 2 to 10) stacked atomic layers exhibiting high transparency due to its highly ordered hBN crystallinity. Deep UV detectors based on the obtained BNNSs were designed, fabricated, and tested. The bias and temperature effects on the photocurrent strength and the signal-to-noise ratio have been carefully characterized and discussed. A significant shift in the cut off wavelength of the BNNSs based photodetectors was observed suggesting a band gap reduction as a result of the BNNSs’ collective structure. The newly designed photodetector presented exceptional properties: a high sensitivity to weak intensities of radiation in both UVC and UVB range while remaining visible-blind, and a high signal-to-noise ratio operation even at temperatures as high as 400 °C. In addition, the BNNSs based photodetector exhibited potential for self-powered operation.

Bilayered graphene/h-BN with folded holes as new nanoelectronic materials: modeling of structures and electronic properties

The latest achievements in 2-dimensional (2D) material research have shown the perspective use of sandwich structures in nanodevices. We demonstrate the following generation of bilayer materials for electronics and optoelectronics. The atomic structures, the stability and electronic properties of Moiré graphene (G)/h-BN bilayers with folded nanoholes have been investigated theoretically by ab-initio DFT method. These perforated bilayers with folded hole edges may present electronic properties different from the properties of both graphene and monolayer nanomesh structures. The closing of the edges is realized by C-B(N) bonds that form after folding the borders of the holes. Stable ≪round≫ and ≪triangle≫ holes organization are studied and compared with similar hole forms in single layer graphene. The electronic band structures of the considered G/BN nanomeshes reveal semiconducting or metallic characteristics depending on the sizes and edge terminations of the created holes. This investigation of the new types of G/BN nanostructures with folded edges might provide a directional guide for the future of this emerging area.

Electron beam directed etching of hexagonal boron nitride

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.

Oxidative Unzipping and Transformation of High Aspect Ratio Boron Nitride Nanotubes into "White Graphene Oxide" Platelets

Morphological and chemical transformations in boron nitride nanotubes under high temperature atmospheric conditions is probed in this study. We report atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 °C for the first time. Unzipping is then followed by coalescence of these densely clustered multiple uncurled ribbons to form stacks of 2D sheets. FTIR and EDS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure to Graphene Oxide, and therefore we term them as “White Graphene Oxide” (WGO). However, not all BNNTs deteriorate even at temperatures as high as 1000 °C. This leads to the formation of a hybrid nanomaterial system comprising of 1D BN nanotubes and 2D BN oxide platelets, potentially having advanced high temperature sensing, radiation shielding, mechanical strengthening, electron emission and thermal management applications due to synergistic improvement of multi-plane transport and mechanical properties. This is the first report on transformation of BNNT bundles to a continuous array of White Graphene Oxide nanoplatelet stacks.

Efficient dispersant-free liquid exfoliation down to the graphene-like state of solvent-free mechanochemically delaminated bulk hexagonal boron nitride

Efficient dispersant-free liquid exfoliation down to the graphene-like state of solvent-free mechanochemically delaminated bulk hexagonal boron nitride was shown.

Effect of boron–carbon–nitride as a negative additive for lead acid batteries operating under high-rate partial-state-of-charge conditions

For BCN-NAM, under HRPSoC cycling conditions, the dominating elementary process is the formation of PbO instead of PbSO₄.