Observation of strongly enhanced photoluminescence from inverted cone-shaped silicon nanostructures. [corrected]

Enhanced near-infrared photodetection via whispering gallery modes in the wave-shaped sidewall silicon nanopillar arrays

We demonstrate a near-infrared (NIR) photodiode (PD) by using a wave-shaped sidewall silicon nanopillars (WS-SiNPs) structure. The designed WS sidewall nanostructure increases the horizontal component of incident light and induces multiple whispering-gallery modes with low-quality factor, which increases the light absorption path. Thus, the WS-SiNP PD shows improved spectral responsivity and external quantum efficiency over straight sidewall silicon nanopillars and planar PDs in the NIR region. Especially, the peak responsivity of 0.648 A/W is achieved at a wavelength of 905 nm, which is used for light detection and ranging. Comparison with commercial photodiodes demonstrates the good optoelectrical characteristics of the fabricated device. The improved characteristics are validated by 3D finite differential time domain simulations. Based on these results, our device shows the potential for cost-effective Si-based optoelectronic devices to be utilized in future advanced applications.

A sub-wavelength Si LED integrated in a CMOS platform

A nanoscale on-chip light source with high intensity is desired for various applications in integrated photonics systems. However, it is challenging to realize such an emitter using materials and fabrication processes compatible with the standard integrated circuit technology. In this letter, we report an electrically driven Si light-emitting diode with sub-wavelength emission area fabricated in an open-foundry microelectronics complementary metal-oxide-semiconductor platform. The light-emitting diode emission spectrum is centered around 1100 nm and the emission area is smaller than 0.14 μm² (~[Formula: see text] nm). This light-emitting diode has high spatial intensity of >50 mW/cm² which is comparable with state-of-the-art Si-based emitters with much larger emission areas. Due to sub-wavelength confinement, the emission exhibits a high degree of spatial coherence, which is demonstrated by incorporating the light-emitting diode into a compact lensless in-line holographic microscope. This centimeter-scale, all-silicon microscope utilizes a single emitter to simultaneously illuminate ~9.5 million pixels of a complementary metal-oxide-semiconductor imager.

Metasurface Photodetectors

Photodetectors are the essential building blocks of a wide range of optical systems. Typical photodetectors only convert the intensity of light electrical output signals, leaving other electromagnetic parameters, such as the frequencies, phases, and polarization states unresolved. Metasurfaces are arrays of subwavelength structures that can manipulate the amplitude, phase, frequency, and polarization state of light. When combined with photodetectors, metasurfaces can enhance the light-matter interaction at the pixel level and also enable the detector pixels to resolve more electromagnetic parameters. In this paper, we review recent research efforts in merging metasurfaces with photodetectors towards improved detection performances and advanced detection schemes. The impacts of merging metasurfaces with photodetectors, on the architecture of optical systems, and potential applications are also discussed.

Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes

Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.

Collective dynamics of strain-coupled nanomechanical pillar resonators

Semiconductur nano- and micropillars represent a promising platform for hybrid nanodevices. Their ability to couple to a broad variety of nanomechanical, acoustic, charge, spin, excitonic, polaritonic, or electromagnetic excitations is utilized in fields as diverse as force sensing or optoelectronics. In order to fully exploit the potential of these versatile systems e.g. for metamaterials, synchronization or topologically protected devices an intrinsic coupling mechanism between individual pillars needs to be established. This can be accomplished by taking advantage of the strain field induced by the flexural modes of the pillars. Here, we demonstrate strain-induced, strong coupling between two adjacent nanomechanical pillar resonators. Both mode hybridization and the formation of an avoided level crossing in the response of the nanopillar pair are experimentally observed. The described coupling mechanism is readily scalable, enabling hybrid nanomechanical resonator networks for the investigation of a broad range of collective dynamical phenomena.

Direct measurement and analytical description of the mode alignment in inversely tapered silicon nano-resonators

Inversely tapered silicon photonic resonators on silicon substrates were shown to host multiple high–Q whispering gallery modes and constitute versatile building blocks for CMOS compatible solid state lighting, optical sensing and modulator devices. So far, numerical analyses by the finite difference time domain method have been used to predict the height distribution of whispering gallery modes in such resonators. In this study, we provide an experimental evidence of this mode distribution along the resonator height by selectively exciting whispering gallery modes using cathodoluminescence spectroscopy. Further we derive analytical functions that permit to relate the height distribution of modes with a defined polarization, symmetry and effective refractive index to the geometrical shape of the inversely tapered resonators.

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

Nanostructured semiconductors feature resonant optical modes that confine light absorption in specific areas called "hot spots". These areas can be used for localized extraction of the photogenerated charges, which in turn could drive chemical reactions for synthesis of catalytic materials. In this work, we use these nanophotonic hot spots in vertical silicon nanowires to locally deposit platinum nanoparticles in a photo-electrochemical system. The tapering angle of the silicon nanowires as well as the excitation wavelength are used to control the location of the hot spots together with the deposition sites of the platinum catalyst. A combination of finite difference time domain (FDTD) simulations with scanning electron microscopy image analysis showed a reasonable correlation between the simulated hot spots and the actual experimental localization and quantity of platinum atoms. This nanophotonic approach of driving chemical reactions at the nanoscale using the optical properties of the photo-electrode, can be very promising for the design of lithography-free and efficient hierarchical nanostructures for the generation of solar fuels.

Free charges versus excitons: photoluminescence investigation of InGaN/GaN multiple quantum well nanorods and their planar counterparts

InGaN/GaN multiple quantum well (MQW) nanorods have demonstrated significantly improved optical and electronic properties compared to their planar counterparts. However, the exact nature of the processes whereby nanorod structures impact the optical properties of quantum wells is not well understood, even though a variety of mechanisms have been proposed. We performed nanoscale spatially resolved, steady-state, and time-resolved photoluminescence (PL) experiments confirming that photoexcited electrons and holes are strongly bound by Coulomb interactions (i.e., excitons) in planar MQWs due to the large exciton binding energy in InGaN quantum wells. In contrast, free electron-hole recombination becomes the dominant mechanism in nanorods, which is ascribed to efficient exciton dissociation. The nanorod sidewall provides an effective pathway for exciton dissociation that significantly improves the optical performance of InGaN/GaN MQWs. We also confirm that surface treatment of nanorod sidewalls has an impact on exciton dissociation. Our results provide new insights into excitonic and charge carrier dynamics of quantum confined materials as well as the influence of surface states.