Controlling the Electronic Structures and Properties of in-Plane Transition-Metal Dichalcogenides Quantum Wells

Lateral junctions of transition metal dichalcogenides as ballistic channels for straintronic applications

In the context of advanced nanoelectronics, two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are gaining considerable interest due to their ultimate thinness, clean surface and high carrier mobility. The engineering prospects offered by those materials are further enlarged by the recent realization of atomically sharp TMD-based lateral junctions, whose electronic properties are governed by strain effects arising from the constituents lattice mismatch. Although most theoretical studies considered only misfit strain, first-principles simulations are employed here to investigate the transport properties under external deformation of a three-terminal device constructed from a MoS2/WSe2/MoS2junction. Large modulation of the current is reported owing to the change in band offset, illustrating the importance of strain on the p-n junction characteristics. The device operation is demonstrated for both local and global deformations, even for ultra-short channels, suggesting potential applications for ultra-thin body straintronics.

Ultrafast and Broad-Band Graphene Heterojunction Photodetectors with High Gain

Graphene possesses an exotic band structure that spans a wide range of important technological wavelength regimes for photodetection, all within a single material. Conventional methods aimed at enhancing detection efficiency often suffer from an extended response time when the light is switched off. The task of achieving ultrafast broad-band photodetection with a high gain remains challenging. Here, we propose a devised architecture that combines graphene with a photosensitizer composed of an alternating strip superstructure of WS2-WSe2. Upon illumination, n+-WS2 and p+-WSe2 strips create alternating electron- and hole-conduction channels in graphene, effectively overcoming the tradeoff between the responsivity and switch time. This configuration allows for achieving a responsivity of 1.7 × 107 mA/W, with an extrinsic response time of 3-4 μs. The inclusion of the superstructure booster enables photodetection across a wide range from the near-ultraviolet to mid-infrared regime and offers a distinctive photogating route for high responsivity and fast temporal response in the pursuit of broad-band detection.

Near-field spectroscopic imaging of exciton quenching at atomically sharp MoS2/WS2 lateral heterojunctions

Heterojunctions made by laterally stitching two different transition metal dichalcogenide monolayers create a unique one-dimensional boundary with intriguing local optical properties that can only be characterized by nanoscale-spatial-resolution spectral tools. Here, we use near-field photoluminescence (NF-PL) to reveal the narrowest region (105 nm) ever reported of photoluminescence quenching at the junction of a laterally stitched WS₂/MoS₂ monolayer. We attribute this quenching to the atomically sharp band offset that generates a strong electric force at the junction to easily dissociate excitons. Besides the sharp heterojunction, a model considering various widths of the alloying interfacial region under low or high optical pumping is presented. With a spatial resolution six times better than that of confocal microscopy, NF-PL provides an unprecedented spectral tool for non-scalable 1D lateral heterojunctions.

Transition Metal Chalcogenides as a Versatile and Tunable Platform for Catalytic CO2 and N2 Electroreduction

Group VI transition metal chalcogenides are the subject of increasing research interest for various electrochemical applications such as low-temperature water electrolysis, batteries, and supercapacitors due to their high activity, chemical stability, and the strong correlation between structure and electrochemical properties. Particularly appealing is their utilization as electrocatalysts for the synthesis of energy vectors and value-added chemicals such as C-based chemicals from the CO₂ reduction reaction (CO₂R) or ammonia from the nitrogen fixation reaction (NRR). This review discusses the role of structural and electronic properties of transition metal chalcogenides in enhancing selectivity and activity toward these two key reduction reactions. First, we discuss the morphological and electronic structure of these compounds, outlining design strategies to control and fine-tune them. Then, we discuss the role of the active sites and the strategies developed to enhance the activity of transition metal chalcogenide-based catalysts in the framework of CO₂R and NRR against the parasitic hydrogen evolution reaction (HER); leveraging on the design rules applied for HER applications, we discuss their future perspective for the applications in CO₂R and NRR. For these two reactions, we comprehensively review recent progress in unveiling reaction mechanisms at different sites and the most effective strategies for fabricating catalysts that, by exploiting the structural and electronic peculiarities of transition metal chalcogenides, can outperform many metallic compounds. Transition metal chalcogenides outperform state-of-the-art catalysts for CO₂ to CO reduction in ionic liquids due to the favorable CO₂ adsorption on the metal edge sites, whereas the basal sites, due to their conformation, represent an appealing design space for reduction of CO₂ to complex carbon products. For the NRR instead, the resemblance of transition metal chalcogenides to the active centers of nitrogenase enzymes represents a powerful nature-mimicking approach for the design of catalysts with enhanced performance, although strategies to hinder the HER must be integrated in the catalytic architecture.

A Review on MoS2 Properties, Synthesis, Sensing Applications and Challenges

Molybdenum disulfide (MoS2) is one of the compounds discussed nowadays due to its outstanding properties that allowed its usage in different applications. Its band gap and its distinctive structure make it a promising material to substitute graphene and other semiconductor devices. It has different applications in electronics especially sensors like optical sensors, biosensors, electrochemical biosensors that play an important role in the detection of various diseases’ like cancer and Alzheimer. It has a wide range of energy applications in batteries, solar cells, microwave, and Terahertz applications. It is a promising material on a nanoscale level, with favorable characteristics in spintronics and magnetoresistance. In this review, we will discuss MoS2 properties, structure and synthesis techniques with a focus on its applications and future challenges.

Tunable thermal expansion coefficient of transition-metal dichalcogenide lateral heterostructures

The thermal expansion effect plays an important role in governing the thermal stability or the stable configuration of quasi-two-dimensional atomic layers, where the difference between the thermal expansion coefficient of different kinds of atomic layer in lateral heterostructure may cause strong thermal rippling of the atomic layer. We investigate the thermal expansion phenomenon in the WSe₂-MoS₂ lateral heterostructure. We find that the thermal expansion coefficient can be enhanced by more than a factor of two via varying the ratio between the WSe₂ and MoS₂ components in the heterostructure. The underlying mechanism is disclosed to be the buckling of the WSe₂ region that is induced by the misfit strain at the coherent interface between WSe₂ and MoS₂. These findings shall be helpful in handling the thermal stability of functional devices based on the transition-metal dichalcogenide lateral heterostructures and other similar quasi-two-dimensional lateral heterostructures.

Charge-Transfer-Induced Photoluminescence Properties of WSe2 Monolayer-Bilayer Homojunction

The charge-transfer process in transition-metal dichalcogenides (TMDCs) lateral homojunction affects the electron-hole recombination process of in optoelectronic devices. However, the optical properties of the homojunction reflecting the charge-transfer process has not been observed and studied. In this work, we investigated the charge-transfer-induced emission properties based on monolayer (1L)-bilayer (2L) WSe₂ lateral homojunction with dozens of nanometer monolayer region. On the one hand, the photoluminescence (PL) emission of bilayer WSe₂ from the homojunction area blue shifts ∼23 and ∼31 meV for direct and indirect bandgap emission, respectively, compared with the bare WSe₂ bilayer region. The blue shift of the emission spectrum in the bilayer WSe₂ is ascribed to the decrease in binding energy induced by charge transfer from monolayer to bilayer. On the other hand, the energy shift shows a tendency to increase as the temperature decreases. The energy blue shift is ∼57 meV for direct bandgap emission at 80 K, which is larger than that (∼23 meV) at room temperature. The larger-energy blue shift at low temperature is derived from the larger driving force under larger band offset. Our observations of the unique optical properties induced by efficient charge transfer are very helpful for exploring novel TMDC-based optoelectronic devices.

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

The growth and exfoliation of two-dimensional (2D) materials have led to the creation of edges and novel interfacial states at the juncture between crystals with different composition or phases. These hybrid heterostructures (HSs) can be built as vertical van der Waals stacks, resulting in a 2D interface, or as stitched adjacent monolayer crystals, resulting in one-dimensional (1D) interfaces. Although most attention has been focused on vertical HSs, increasing theoretical and experimental interest in 1D interfaces is evident. In-plane interfacial states between different 2D materials inherit properties from both crystals, giving rise to robust states with unique 1D non-parabolic dispersion and strong spin-orbit effects. With such unique characteristics, these states provide an exciting platform for realizing 1D physics. Here, we review and discuss advances in 1D heterojunctions, with emphasis on theoretical approaches for describing those between semiconducting transition metal dichalcogenides MX ₂ (with M  =  Mo, W and X  =  S, Se, Te), and how the interfacial states can be characterized and utilized. We also address how the interfaces depend on edge geometries (such as zigzag and armchair) or strain, as lattice parameters differ across the interface, and how these features affect excitonic/optical response. This review is intended to serve as a resource for promoting theoretical and experimental studies in this rapidly evolving field.

Tunable Schottky contacts in MSe2/NbSe2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors

MSe₂/NbSe₂ (M = Mo and W) heterostructures exhibit low and tunable Schottky barriers, indicating promising application potential in field-effect transistors.

Hexagonal 2H-MoSe2 broad spectrum active photocatalyst for Cr(VI) reduction

To make full use of the solar energy, exploring broad spectrum active photocatalysts has become one of the core issues for photocatalysis. Here we report a novel hexagonal 2H-MoSe₂ photocatalyst with ultraviolet (UV)-visible-near infrared (NIR) light response for the first time. The results indicate that the MoSe₂ displays excellent photo-absorption and photocatalytic activity in the reduction of Cr(VI) under UV and visible even NIR light irradiation. MoSe₂ synthesized at pH value of 2 achieves the highest Cr(VI) reduction rates of 99%, 91% and 100% under UV, visible and NIR light irradiation, respectively, which should be attributed to its comparatively higher light absorption, efficient charge separation and transfer as well as relatively large number of surface active sites. The excellent broad spectrum active photocatalytic activity makes the MoSe₂ to be a promising photocatalyst for the effective utilization of solar energy.