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Tsai MY, Tsai TH, Gandhi AC, Lu HL, Li JX, Chen PL, Chen KW, Chen SZ, Chen CH, Liu CH, Lin YF, Chiu PW. Ultrafast and Broad-Band Graphene Heterojunction Photodetectors with High Gain. ACS Nano 2023; 17:25037-25044. [PMID: 38096421 DOI: 10.1021/acsnano.3c07665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Graphene possesses an exotic band structure that spans a wide range of important technological wavelength regimes for photodetection, all within a single material. Conventional methods aimed at enhancing detection efficiency often suffer from an extended response time when the light is switched off. The task of achieving ultrafast broad-band photodetection with a high gain remains challenging. Here, we propose a devised architecture that combines graphene with a photosensitizer composed of an alternating strip superstructure of WS2-WSe2. Upon illumination, n+-WS2 and p+-WSe2 strips create alternating electron- and hole-conduction channels in graphene, effectively overcoming the tradeoff between the responsivity and switch time. This configuration allows for achieving a responsivity of 1.7 × 107 mA/W, with an extrinsic response time of 3-4 μs. The inclusion of the superstructure booster enables photodetection across a wide range from the near-ultraviolet to mid-infrared regime and offers a distinctive photogating route for high responsivity and fast temporal response in the pursuit of broad-band detection.
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Affiliation(s)
- Meng-Yu Tsai
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Tsung-Han Tsai
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | | | - Hsueh-Lung Lu
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Jia-Xin Li
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Liang Chen
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kai-Wen Chen
- Department of Materials Science & Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Sun-Zen Chen
- Center for Nanotechnology, Materials Science and Microsystem, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chang-Hua Liu
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Po-Wen Chiu
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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2
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Anbalagan AK, Hu FC, Chan WK, Gandhi AC, Gupta S, Chaudhary M, Chuang KW, Ramesh AK, Billo T, Sabbah A, Chiang CY, Tseng YC, Chueh YL, Wu SY, Tai NH, Chen HYT, Lee CH. Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS 2 Sputtered Few-Layered Thin Films. ACS Nano 2023; 17:6555-6564. [PMID: 36951422 DOI: 10.1021/acsnano.2c11955] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Defect engineering is of great interest to the two-dimensional (2D) materials community. If nonmagnetic transition-metal dichalcogenides can possess room-temperature ferromagnetism (RTFM) induced by defects, then they will be ideal for application as spintronic materials and also for studying the relation between electronic and magnetic properties of quantum-confined structures. Thus, in this work, we aimed to study gamma-ray irradiation effects on MoS2, which is diamagnetic in nature. We found that gamma-ray exposure up to 9 kGy on few-layered (3.5 nm) MoS2 films induces an ultrahigh saturation magnetization of around 610 emu/cm3 at RT, whereas no significant changes were observed in the structure and magnetism of bulk MoS2 (40 nm) films even after gamma-ray irradiation. The RTFM in a few-layered gamma-ray irradiated sample is most likely due to the bound magnetic polaron created by the spin interaction of Mo 4d ions with trapped electrons present at sulfur vacancies. In addition, density functional theory (DFT) calculations suggest that the defect containing one Mo and two S vacancies is the dominant defect inducing the RTFM in MoS2. These DFT results are consistent with Raman, X-ray photoelectron spectroscopy, and ESR spectroscopy results, and they confirm the breakage of Mo and S bonds and the existence of vacancies after gamma-ray irradiation. Overall, this study suggests that the occurrence of magnetism in gamma-ray irradiated MoS2 few-layered films could be attributed to the synergistic effects of magnetic moments arising from the existence of both Mo and S vacancies as well as lattice distortion of the MoS2 structure.
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Affiliation(s)
- Aswin Kumar Anbalagan
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Fang-Chi Hu
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Weng Kent Chan
- College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ashish Chhaganlal Gandhi
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shivam Gupta
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Mayur Chaudhary
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kai-Wei Chuang
- Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Akhil K Ramesh
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30013, Taiwan
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Tadesse Billo
- European Synchrotron Radiation Facility, 71 avenue des Martyrs, Grenoble 38000, France
| | - Amr Sabbah
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Ching-Yu Chiang
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Yuan-Chieh Tseng
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30013, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan
| | - Nyan-Hwa Tai
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Hsin-Yi Tiffany Chen
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- College of Semiconductor Research, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chih-Hao Lee
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan
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Gandhi AC, Manjunatha K, Chan TS, Wu SY. Structural and Superconducting Proximity Effect of SnPb Bimetallic Nanoalloys. Nanomaterials (Basel) 2022; 12:4323. [PMID: 36500944 PMCID: PMC9738066 DOI: 10.3390/nano12234323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Revised: 12/01/2022] [Accepted: 12/02/2022] [Indexed: 06/17/2023]
Abstract
We report the superconducting properties between a conventional strong-coupled Pb and weak-coupled Sn superconductor. A series of SnrPb1-r nanoalloys with various compositions r were synthesized, and their superconducting properties were measured using superconducting quantum interference devices (SQUIDs) magnetometer. Our results reveal a superconducting proximity effect (SPE) between immiscible Sn and Pb granules in the range of r = 0.2~0.9, as a weak superconducting coupling can be established with the coexistence of phonon hardening and increased Ginzburg-Landau coherence length. Furthermore, our results provide new insights into improving the study of the superconducting proximity effect introduced by Sn doping.
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Affiliation(s)
- Ashish Chhaganlal Gandhi
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | | | - Ting-Shan Chan
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan
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Siao MD, Gandhi AC, Sahoo AK, Wu YC, Syu HK, Tsai MY, Tsai TH, Yang YC, Lin YF, Liu RS, Chiu PW. WSe 2/WS 2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention. ACS Appl Mater Interfaces 2022; 14:3467-3475. [PMID: 34995438 DOI: 10.1021/acsami.1c20076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A two-dimensional (2D) nonvolatile memory device architecture to improve the long-term charge retention with the minimum charge loss without compromising storage capacity and the extinction ratio for practical applications has been an imminent demand. To address the current issue, we adopted a novel type-II band-aligned heterobilayer channel comprising vertically stacked monolayer WSe2 nanodots on monolayer WS2. The band offset modulation leads to electron doping from WSe2 nanodots into the WS2 channel without any external driving electric field. As a result, the tested device outperformed with a memory window as high as 34 V and a negligible charge loss of 7% in a retention period of 10 years while maintaining a high extinction ratio of 106. The doping technique presented in this work provides a feasible route to modulate the electrical properties of 2D channel materials without hampering charge transport, paving the way for high-performance 2D memory devices.
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Affiliation(s)
- Ming-Deng Siao
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | | | - Anup Kumar Sahoo
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Chieh Wu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Hong-Kai Syu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Meng-Yu Tsai
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Tsung-Han Tsai
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yueh-Chiang Yang
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Rai-Shung Liu
- Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Science of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Wen Chiu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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5
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Gandhi AC, Lai CY, Wu KT, Ramacharyulu PVRK, Koli VB, Cheng CL, Ke SC, Wu SY. Phase transformation and room temperature stabilization of various Bi 2O 3 nano-polymorphs: effect of oxygen-vacancy defects and reduced surface energy due to adsorbed carbon species. Nanoscale 2020; 12:24119-24137. [PMID: 33242052 DOI: 10.1039/d0nr06552h] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report the grain growth from the nanoscale to microscale and a transformation sequence from Bi →β-Bi2O3→γ-Bi2O3→α-Bi2O3 with the increase of annealing temperature. The room temperature (RT) stabilization of β-Bi2O3 nanoparticles (NPs) was attributed to the effect of reduced surface energy due to adsorbed carbon species, and oxygen vacancy defects may have played a significant role in the RT stabilization of γ-Bi2O3 NPs. An enhanced red emission band was evident from all the samples attributed to oxygen-vacancy defects formed during the growth process in contrast with the observed white emission band from the air annealed Bi ingots. Based on our experimental findings, the air annealing induced oxidation of Bi NPs and transformation mechanism within various Bi2O3 nano-polymorphs are presented. The outcome of this study suggests that oxygen vacancy defects at the nanoscale play a significant role in both structural stabilization and phase transformation within various Bi2O3 nano-polymorphs, which is significant from theoretical consideration.
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Gandhi AC, Li TY, Kumar BV, Reddy PM, Peng JC, Wu CM, Wu SY. Room Temperature Magnetic Memory Effect in Cluster-Glassy Fe-doped NiO Nanoparticles. Nanomaterials (Basel) 2020; 10:nano10071318. [PMID: 32635511 PMCID: PMC7407623 DOI: 10.3390/nano10071318] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/11/2020] [Revised: 07/02/2020] [Accepted: 07/02/2020] [Indexed: 11/16/2022]
Abstract
The Fe-doped NiO nanoparticles that were synthesized using a co-precipitation method are characterized by enhanced room-temperature ferromagnetic property evident from magnetic measurements. Neutron powder diffraction experiments suggested an increment of the magnetic moment of 3d ions in the nanoparticles as a function of Fe-concentration. The temperature, time, and field-dependent magnetization measurements show that the effect of Fe-doping in NiO has enhanced the intraparticle interactions due to formed defect clusters. The intraparticle interactions are proposed to bring additional magnetic anisotropy energy barriers that affect the overall magnetic moment relaxation process and emerging as room temperature magnetic memory. The outcome of this study is attractive for the future development of the room temperature ferromagnetic oxide system to facilitate the integration of spintronic devices and understanding of their fundamental physics.
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Affiliation(s)
| | - Tai-Yue Li
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan; (A.C.G.); (T.-Y.L.)
| | - B. Vijaya Kumar
- Department of Chemistry, Nizam College, Osmania University, Hyderabad 500001, India;
| | - P. Muralidhar Reddy
- Department of Chemistry, University College of Science, Osmania University, Hyderabad 500007, Telangana, India;
| | - Jen-Chih Peng
- SIKA, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan; (J.-C.P.); (C.-M.W.)
| | - Chun-Ming Wu
- SIKA, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan; (J.-C.P.); (C.-M.W.)
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan; (A.C.G.); (T.-Y.L.)
- Correspondence: ; Tel.: +886-3-890-3717
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7
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Gandhi AC, Cheng CL, Wu SY. Structural and Enhanced Optical Properties of Stabilized γ‒Bi 2O 3 Nanoparticles: Effect of Oxygen Ion Vacancies. Nanomaterials (Basel) 2020; 10:nano10061023. [PMID: 32471076 PMCID: PMC7352962 DOI: 10.3390/nano10061023] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/08/2020] [Revised: 05/20/2020] [Accepted: 05/22/2020] [Indexed: 01/04/2023]
Abstract
We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.
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Gawali SR, Gandhi AC, Gaikwad SS, Pant J, Chan TS, Cheng CL, Ma YR, Wu SY. Role of cobalt cations in short range antiferromagnetic Co 3O 4 nanoparticles: a thermal treatment approach to affecting phonon and magnetic properties. Sci Rep 2018; 8:249. [PMID: 29321560 PMCID: PMC5762665 DOI: 10.1038/s41598-017-18563-9] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2017] [Accepted: 12/14/2017] [Indexed: 11/09/2022] Open
Abstract
We report the phonon and magnetic properties of various well-stabilized Co3O4 nanoparticles. The net valence in cobalt (II)/(III) cation can be obtained by subtracting the Co2+ ions in tetrahedral interstices and Co3+ ions in the octahedral interstices, respectively, which will possess spatial inhomogeneity of its magnetic moment via Co2+ in tetrahedra and Co3+ in octahedral configurations in the normal spinel structure. Furthermore, the distribution of Co2+/Co3+ governed by various external (magnetic field and temperature) and internal (particle size and slightly distorted CoO6 octahedra) sources, have led to phenomena such as a large redshift of phonon-phonon interaction and short-range magnetic correlation in the inverse spinel structure. The outcome of our study is important in terms of the future development of magnetic semiconductor spintronic devices of Co3O4.
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Affiliation(s)
- Swati R Gawali
- Department of Physics, CES's Dr. A. B. Telang Sr. College, Savitribai Phule Pune University, Pune, 411007, India
| | | | | | - Jayashree Pant
- Department of Physics, Abasaheb Garware College, Savitribai Phule Pune University, Pune, 411007, India
| | - Ting-Shan Chan
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Chia-Liang Cheng
- Department of Physics, National Dong Hwa University, Hualien, 97401, Taiwan
| | - Yuan-Ron Ma
- Department of Physics, National Dong Hwa University, Hualien, 97401, Taiwan
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien, 97401, Taiwan.
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Gandhi AC, Chan TS, Pant J, Wu SY. Erratum to: Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles. Nanoscale Res Lett 2017; 12:334. [PMID: 28482646 PMCID: PMC5419956 DOI: 10.1186/s11671-017-2090-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2017] [Accepted: 04/19/2017] [Indexed: 06/07/2023]
Affiliation(s)
- Ashish Chhaganlal Gandhi
- Department of Physics, National Dong Hwa University, Hualien, 97401, Taiwan
- Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
| | - Ting Shan Chan
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Jayashree Pant
- Department of Physics, Abasaheb Garware College, Savitribai Phule Pune University, Pune, India
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien, 97401, Taiwan.
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Gandhi AC, Chan TS, Pant J, Wu SY. Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles. Nanoscale Res Lett 2017; 12:207. [PMID: 28325039 PMCID: PMC5359196 DOI: 10.1186/s11671-017-1988-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/22/2016] [Accepted: 03/09/2017] [Indexed: 06/06/2023]
Abstract
After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins.
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Affiliation(s)
- Ashish Chhaganlal Gandhi
- Department of Physics, National Dong Hwa University, Hualien, 97401, Taiwan
- Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
| | - Ting Shan Chan
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Jayashree Pant
- Department of Physics, Abasaheb Garware College, Savitribai Phule Pune University, Pune, India
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien, 97401, Taiwan.
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Abstract
We report the observation of strong electron-phonon coupling in intergranular linked BiIn superconductors over an infinite range mediated by low-lying phonons. An enhanced superconducting transition temperature was observed from the magnetization, revealing a main diamagnetic Meissner state below TC(0) = 5.86(1) K and a critical field HC(0) = 1355(15) Oe with an In2Bi phase of the composite sample. The electron-phonon coupling to low lying phonons is found to be the leading mechanism for observed strong-coupling superconductivity in the BiIn system. Our findings suggest that In2Bi is in the strong-coupling region with TC(0) = 5.62(1) K, λep = 1.45, ωln = 45.92 K and α = 2.23. The estimated upper critical field can be well-described by a power law with α value higher than 2, consistent with the strong electron-phonon coupling.
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Affiliation(s)
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien, 97401, Taiwan.
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12
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Gandhi AC, Wu SY. Strong Deep-Level-Emission Photoluminescence in NiO Nanoparticles. Nanomaterials (Basel) 2017; 7:nano7080231. [PMID: 28829388 PMCID: PMC5575713 DOI: 10.3390/nano7080231] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2017] [Revised: 07/31/2017] [Accepted: 08/17/2017] [Indexed: 11/16/2022]
Abstract
Nickel oxide is one of the highly promising semiconducting materials, but its large band gap (3.7 to 4 eV) limits its use in practical applications. Here we report the effect of nickel/oxygen vacancies and interstitial defects on the near-band-edge (NBE) and deep-level-emission (DLE) in various sizes of nickel oxide (NiO) nanoparticles. The ultraviolet (UV) emission originated from excitonic recombination corresponding near-band-edge (NBE) transition of NiO, while deep-level-emission (DLE) in the visible region due to various structural defects such as oxygen vacancies and interstitial defects. We found that the NiO nanoparticles exhibit a strong green band emission around ~2.37 eV in all samples, covering 80% integrated intensity of PL spectra. This apparently anomalous phenomenon is attributed to photogenerated holes trapped in the deep level oxygen vacancy recombining with the electrons trapped in a shallow level located just below the conducting band.
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Affiliation(s)
- Ashish Chhaganlal Gandhi
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan.
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan.
| | - Sheng Yun Wu
- Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan.
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13
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Abstract
Finite sized Ni/NiO nanoparticles (NPs) are prepared by oxidizing pure Ni-NPs in an ambient atmosphere with varying annealing time (t A). A synchrotron radiation x-ray diffraction technique was used to estimate the grain size, weight fraction and lattice parameters of Ni and NiO. The temperature (T) dependencies of effective g-factor and line-width of ferromagnetic resonance (FMR) spectra for a series of Ni/NiO NPs are determined. Three T-regions with different FMR behaviors T > 200 K, 200 > T > 130 K and T < 130 K are identified. In particular, for T < 200 K, the T-dependency of the g-factor reveals an evolution of exchange coupling between Ni and NiO due to the gradual oxidation of Ni NPs.
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Gandhi AC, Das R, Chou FC, Lin JG. Magnetocrystalline two-fold symmetry in CaFe 2O 4 single crystal. J Phys Condens Matter 2017; 29:175802. [PMID: 28346220 DOI: 10.1088/1361-648x/aa61f2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Understanding of magnetocrystalline anisotropy in CaFe2O4 is a matter of importance for its future applications. A high quality single crystal CaFe2O4 sample is studied by using synchrotron x-ray diffraction, a magnetometer and the electron spin resonance (ESR) technique. A broad feature of the susceptibility curve around room temperature is observed, indicating the development of 1D spin interactions above the on-set of antiferromagnetic transition. The angular dependency of ESR reveals an in-plane two-fold symmetry, suggesting a strong correlation between the room temperature spin structure and magnetocrystalline anisotropy. This finding opens an opportunity for the device utilizing the anisotropy field of CaFe2O4.
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Abstract
Investigating the mechanism of unidirectional anisotropy mediated giant memory effect in antiferromagnetic (AF) transition metal oxide is a matter of importance for its future application in spintronics.
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Affiliation(s)
| | - Sheng Yun Wu
- Department of Physics
- National Dong Hwa University
- Hualien 97401
- Taiwan
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16
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Trivedi SP, Trivedi PH, Gandhi AC. Tackling Uterine Artery at the Origin: Safe and Effective for All Total Laparoscopic Hysterectomy and Ureter’s Best Defence. J Minim Invasive Gynecol 2016. [DOI: 10.1016/j.jmig.2016.08.484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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Affiliation(s)
- P H Trivedi
- Obstetrics & Gynaecology, Total Health Care Pvt Ltd, Mumbai, Maharashtra, India
| | - N A Parekh
- Obstetrics & Gynaecology, Total Health Care Pvt Ltd, Mumbai, Maharashtra, India
| | - S P Trivedi
- Obstetrics & Gynaecology, Total Health Care Pvt Ltd, Mumbai, Maharashtra, India
| | - A C Gandhi
- Obstetrics & Gynaecology, Total Health Care Pvt Ltd, Mumbai, Maharashtra, India
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