Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi

Weak antilocalization in the topological semimetal candidate YbAuSb

We report a study of the magnetic and magnetotransport properties of YbAuSb single crystals, which were grown using the bismuth flux. The x-ray diffraction data indicate that YbAuSb crystallizes in LiGaGe-type hexagonal structure with space groupP63mc. Our magnetic measurements revealed that YbAuSb is nonmagnetic with a divalent state of ytterbium ion. The temperature-dependent electrical resistivity exhibits a metallic behavior. A cusp-like feature in transverse and longitudinal magnetoresistance is observed at the low field regime. This cusp-like feature is attributed to the weak antilocalization (WAL) effect, which is more prominent at low temperatures. The transverse magnetoconductivity in low field region follows semiclassical model∼B, which is consistent with the presence of WAL phenomena. The WAL effect in transverse and longitudinal magnetoconductance is well explained using the modified Hikami-Larkin-Nagaoka and generalized Altshuler-Aronov model, respectively. The Hall resistivity shows a linear field dependence with a positive slope, suggesting hole charge carriers dominate in electrical transport. The calculated carrier density and mobility are in the order of 1020 cm-3and 102 cm2 V-1 s-1, respectively.

Comprehensive investigation of electronic structure, phonon spectrum and thermoelectric performance of LuMSb (M = Ni, Pd, Pt) half Heusler compounds from first principles

We studied the structural, electronic, phonon spectrum and thermoelectric properties of ternary LuMSb (M = Ni, Pd, Pt) half Heusler compounds by using first principles method. The electronic properties are calculated via energy band structure and density of states by using GGA + U approximation. The calculations reveal that the replacement of Ni with Pd and Pt, energy gap decreases and LuNiSb, LuPdSb are found to have narrow indirect band gaps and exhibit semiconducting nature, while LuPtSb is found to be a gapless semiconductor. Phonon band structure calculations give only positive values of phonon frequency indicating the dynamically stability of these compounds. The thermoelectric properties have been computed using semi-classical Boltzmann transport theory. We found high Seebeck coefficient (S) and high power factor (PF) for LuNiSb and LuPdSb compounds in the whole temperature range. The ZT values of LuNiSb and LuPdSb are high in general and reach a maximum of 0.67 and 0.69 at 450 K, respectively, whereas 0.39 is the maximum ZT value for LuPtSb at the same temperature. These findings propose LuNiSb and LuPdSb compounds as promising materials for thermoelectric applications at room temperature.

Colossal negative magnetoresistance in field-induced Weyl semimetal of magnetic half-Heusler compound

The discovery of topological insulators and semimetals triggered enormous interest in exploring emergent electromagnetic responses in solids. Particular attention has been focused on ternary half-Heusler compounds, whose electronic structure bears analogy to the topological zinc-blende compounds while also including magnetic rare-earth ions coupled to conduction electrons. However, most of the research in this system has been in band-inverted zero-gap semiconductors such as GdPtBi, which still does not fully exhaust the large potential of this material class. Here, we report a less-studied member of half-Heusler compounds, HoAuSn, which we show is a trivial semimetal or narrow-gap semiconductor at zero magnetic field but undergoes a field-induced transition to a Weyl semimetal, with a negative magnetoresistance exceeding four orders of magnitude at low temperatures. The combined study of Shubnikov-de Haas oscillations and first-principles calculation suggests that the exchange field from Ho 4f moments reconstructs the band structure to induce Weyl points which play a key role in the strong suppression of large-angle carrier scattering. Our findings demonstrate the unique mechanism of colossal negative magnetoresistance and provide pathways towards realizing topological electronic states in a large class of magnetic half-Heusler compounds.

Half-Heusler phase TmNiSb under pressure: intrinsic phase separation, thermoelectric performance and structural transition

Half-Heusler (HH) phase TmNiSb was obtained by arc-melting combined with high-pressure high-temperature sintering in conditions: p = 5.5 GPa, [Formula: see text] = 20, 250, 500, 750, and 1000 [Formula: see text]C. Within pressing temperatures 20-750 [Formula: see text]C the samples maintained HH structure, however, we observed intrinsic phase separation. The material divided into three phases: stoichiometric TmNiSb, nickel-deficient phase TmNi[Formula: see text]Sb, and thulium-rich phase Tm(NiSb)[Formula: see text]. For TmNiSb sample sintered at 1000 [Formula: see text]C, we report structural transition to LiGaGe-type structure (P[Formula: see text]mc, a = 4.367(3) Å, c = 7.138(7) Å). Interpretation of the transition is supported by X-ray powder diffraction, electron back-scattered diffraction, ab-initio calculations of Gibbs energy and phonon dispersion relations. Electrical resistivity measured for HH samples with phase separation shown non-degenerate behavior. Obtained energy gaps for HH samples were narrow ([Formula: see text] 260 meV), while the average hole effective masses in range 0.8-2.5[Formula: see text]. TmNiSb sample pressed at 750 [Formula: see text]C achieved the biggest power factor among the series, 13 [Formula: see text]WK[Formula: see text]cm[Formula: see text], which proves that the intrinsic phase separation is not detrimental for the electronic transport.

Insulator-to-Superconductor Transition in Quasi-One-Dimensional HfS3 under Pressure

Various transition-metal trichalcogenides (TMTC) show unique electronic properties, such as metal-insulator transition, topological insulator, and even superconducting transition. Currently, almost all metallic TMTC compounds can show superconductivity either at ambient pressure or at high pressure. However, most TMTC compounds are semiconductors and even insulators. Does superconductivity exist in any non-metallic TMTC compound by artificial manipulation? In this work, the electronic behavior of highly insulating HfS₃ has been manipulated in terms of pressure. HfS₃ undergoes an insulator-to-semiconductor transition near 17 GPa with a band gap reduction of ∼1 eV. Optical absorption, Raman spectroscopy, and X-ray diffraction measurements provide consistent results, suggesting the structural origin of the electronic transition. Upon further compression, HfS₃ becomes a superconductor without further structural transition. The superconducting transition occurs as early as 50.6 GPa, and the T_c reaches 8.1 K at 121 GPa, which sets a new record for TMTCs. This work reveals that all TMTCs may be superconductors and opens a new avenue to explore the abundant emergent phenomena in the TMTC material family.

Common Topological Features in Band Structure of RNiSb and RSb Compounds for R = Tb, Dy, Ho

The electronic and band structures of ternary RNiSb and binary RSb compounds for R = Tb, Dy, Ho, have been investigated using an ab initio method accounting for strong electron correlations in the 4f shell of the rare-earth metals. These ternary compounds are found to be semiconductors with the indirect gap of 0.21, 0.21, and 0.26 eV for Tb, Dy, and Ho(NiSb), respectively. In contrast, in all binary RSb compounds, bands near the Fermi energy at the Г and X points are shifted relatively to RNiSb and form hole and electron pockets, so the energy gap is closed in RSb. The band structure typical for semimetals is formed in all RSb compounds for R = Tb, Dy, Ho. For the first time, we identify similar features near the Fermi level in the considered binary semimetals, namely, the presence of the hole and electron pockets in the vicinity of the Г and X points, the nonsymmetric electron pocket along Γ-X-W direction and hole pockets along the L-Γ-X direction, which were previously found experimentally in the other compound of this series GdSb. The magnetic moment of all considered compounds is fully determined by magnetic moments of the rare earth elements, the calculated effective magnetic moments of these ions have values close to the experimental values for all ternary compounds.

New Dimension in Magnetism and Superconductivity: 3D and Curvilinear Nanoarchitectures

Traditionally, the primary field, where curvature has been at the heart of research, is the theory of general relativity. In recent studies, however, the impact of curvilinear geometry enters various disciplines, ranging from solid-state physics over soft-matter physics, chemistry, and biology to mathematics, giving rise to a plethora of emerging domains such as curvilinear nematics, curvilinear studies of cell biology, curvilinear semiconductors, superfluidity, optics, 2D van der Waals materials, plasmonics, magnetism, and superconductivity. Here, the state of the art is summarized and prospects for future research in curvilinear solid-state systems exhibiting such fundamental cooperative phenomena as ferromagnetism, antiferromagnetism, and superconductivity are outlined. Highlighting the recent developments and current challenges in theory, fabrication, and characterization of curvilinear micro- and nanostructures, special attention is paid to perspective research directions entailing new physics and to their strong application potential. Overall, the perspective is aimed at crossing the boundaries between the magnetism and superconductivity communities and drawing attention to the conceptual aspects of how extension of structures into the third dimension and curvilinear geometry can modify existing and aid launching novel functionalities. In addition, the perspective should stimulate the development and dissemination of research and development oriented techniques to facilitate rapid transitions from laboratory demonstrations to industry-ready prototypes and eventual products.

Strain driven emergence of topological non-triviality in YPdBi thin films

Half-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivial half-Heusler system by strain engineering. Here, using magneto-transport measurements and first principles DFT-based simulations, we demonstrate topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO. These topological surface states arise in an otherwise trivial semi-metal purely driven by strain. Furthermore, we observe the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state. Our results demonstrate the critical role played by strain in engineering novel topological states in thin film systems for developing next-generation spintronic devices.

Observation of Dirac state in half-Heusler material YPtBi

The prediction of non-trivial topological electronic states in half-Heusler compounds makes these materials good candidates for discovering new physics and devices as half-Heusler phases harbour a variety of electronic ground states, including superconductivity, antiferromagnetism, and heavy-fermion behaviour. Here, we report a systematic studies of electronic properties of a superconducting half-Heusler compound YPtBi, in its normal state, investigated using angle-resolved photoemission spectroscopy. Our data reveal the presence of a Dirac state at the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\Gamma$$\end{document}Γ point of the Brillouin zone at 500 meV below the Fermi level. We observe the presence of multiple Fermi surface pockets, including two concentric hexagonal and six half-oval shaped pockets at the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\Gamma$$\end{document}Γ and K points of the Brillouin zone, respectively. Furthermore, our measurements show Rashba-split bands and multiple surface states crossing the Fermi level, this is also supported by the first-principles calculations. Our findings of a Dirac state in YPtBi contribute to the establishing of half-Heusler compounds as a potential platform for novel topological phases.

Magnetotransport properties of noncentrosymmetric CaAgBi single crystal

We report on the single crystal growth and transport properties of a topological semimetal CaAgBi which crystallizes in the hexagonal ABC-type structure with the non-centrosymmetric space groupP63mc(No. 186). The transverse magnetoresistance measurements with current in the basal plane of the hexagonal crystal structure reveal a value of about 30% forI∥[10̄0] direction and about 50% forI∥[1̅10] direction at 10 K in an applied magnetic field of 14 T. The magnetoresistance shows a cusp-like behavior in the low magnetic field region, suggesting the presence of weak antilocalization effect for temperatures less than 100 K. The Hall measurements reveal that predominant charge carriers are p-type, exhibiting a linear behavior at high fields. The magnetoconductance of CaAgBi is analyzed based on the modified Hikami-Larkin-Nagaoka model. Our first-principle calculations within a density-functional theory framework reveal that the Fermi surface of CaAgBi consists of both the electron and hole pockets and the size of the hole pocket is much larger than electron pockets suggesting the dominant p-type carriers in accordance with our experimental results.

Electronic structure of the PrNiBi half-Heusler system based on the σGGA + U method

In this works, we study the electronic structure and magnetic properties of the Pr-Ni-Bi half-Heusler systems based on density functional theory. We use the σ GGA + U scheme to consider the effects of on-site electron-electron interactions. Results show that in contrast to the rough estimation of the total magnetic moment of the unit cell, based on the Slater-Pauling behavior in the half-Heusler systems, this system has an antiferromagnetic ground state because of the localized Pr-f electrons. By increasing the magnitude of the effective U parameter, band-inversion occurs in the band structure of this system, which shows the possibility of topological state occurrence.

Magnetism of 3d and 4d doped Mn0.7T0.3NiGe (T = Fe, Co, Ru and Rh): bulk magnetization and ab initio calculations

We compare the magnetic properties of 3d (Fe and Co) and 4d (Ru and Rh) transition metals doped MnNiGe using the combined results of magnetization and ab initio calculations. The alloys crystallize in austenite Ni₂In-type hexagonal phase (space group: P6₃/mmc) with insignificant difference in the lattice parameters. Mn_0.7Fe_0.3NiGe and Mn_0.7Co_0.3NiGe exhibit spin-glass behavior, resulting from the competing ferro- and antiferromagnetic interactions. These alloys exhibit spontaneous exchange bias field of about [Formula: see text] Oe and 323 Oe, respectively. From the 4d-metal doped alloys, Mn_0.7Ru_0.3NiGe shows glassy behavior while long-range ferromagnetic order is confirmed in Mn_0.7Rh_0.3NiGe. In Mn_0.7Rh_0.3NiGe, in agreement with experiment and the theoretical calculations, the ground state is confirmed to be ferromagnetic because of the FM exchange interactions of the Mn magnetic moments. But in Mn_1-x (Fe,Co,Ru) _x NiGe alloys the calculations revealed the competing and comparable FM and AFM exchange interaction parameters, resulting in the formation of spin-glassy characteristics.