Site-selective local fluorination of graphene induced by focused ion beam irradiation

Building a cm2scale CVD graphene-based gas sensor: modelling the kinetic with a three-site adsorption/desorption Langmuir model

In this article, we aim to develop and study a highly sensitive and selective cm2scale graphene-based gas sensor. We present the technology used to fabricate sensors which integrate monolayer chemical vapour deposition graphene: photolithography and transfer of layers. Characterization techniques (optical microscopy, AFM, micro-Raman spectroscopy, transport electrical measurements) ensure a diagnosis of graphene ribbons and allow good reproducibility of technological processes. We present the results of gas characterizations after a 200 ppm NO2exposure. We propose a novel approach for the modelling of the sensor response with a three-site adsorption/desorption Langmuir model. This innovative way of modelling the sensor response should provide a better understanding of the sensor's kinetic and help to overcome the long response time observed with graphene gas sensors.

Fluorographene with impurities as a biomimetic light-harvesting medium

We investigate the prospect of using a two-dimensional material, fluorographene, to mimic the light-harvesting function of natural photosynthetic antennas. We show by quantum chemical calculations that isles of graphene in a fluorographene sheet can act as quasi-molecules similar to natural pigments from which the structures similar in function to photosynthetic antennas can be built. The graphene isles retain enough identity so that they can be used as building blocks to which intuitive design principles of natural photosynthetic antennas can be applied. We examine the excited state properties, stability, and interactions of these building blocks. Constraints put on the antenna structure by the two-dimensionality of the material as well as the discrete nature of fluorographene sheet are studied. We construct a hypothetical energetic funnel out of two types of quasi-molecules to show how a limited number of building blocks can be arranged to bridge the energy gap and spatial separation in excitation energy transfer. Energy transfer rates for a wide range of the system-environment interaction strengths are predicted. We conclude that conditions for the near unity quantum efficiency of energy transfer are likely to be fulfilled in fluorographene with the controlled arrangement of quasi-molecules.

Edge Effect in Electronic and Transport Properties of 1D Fluorinated Graphene Materials

A systematic examination of the electronic and transport properties of 1D fluorine-saturated zigzag graphene nanoribbons (ZGNRs) is presented in this article. One publication (Withers et al., Nano Lett., 2011, 11, 3912-3916.) reported a controlled synthesis of fluorinated graphene via an electron beam, where the correlation between the conductivity of the resulting materials and the width of the fluorinated area is revealed. In order to understand the detailed transport mechanism, edge-fluorinated ZGNRs with different widths and fluorination degrees are investigated. Periodic density functional theory (DFT) is employed to determine their thermodynamic stabilities and electronic structures. The associated transport models of the selected structures are subsequently constructed. The combination of a non-equilibrium Green's function (NEGF) and a standard Landauer equation is applied to investigate the global transport properties, such as the total current-bias voltage dependence. By projecting the corresponding lesser Green's function on the atomic orbital basis and their spatial derivatives, the local current density maps of the selected systems are calculated. Our results suggest that specific fluorination patterns and fluorination degrees have significant impacts on conductivity. The conjugated π system is the dominate electron flux migration pathway, and the edge effect of the ZGNRs can be well observed in the local transport properties. In addition, with an asymmetric fluorination pattern, one can trigger spin-dependent transport properties, which shows its great potential for spintronics applications.

Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon Nanotubes

The lack of a sizeable band gap has so far prevented graphene from building effective electronic and optoelectronic devices despite its numerous exceptional properties. Intensive theoretical research reveals that a band gap larger than 1 eV can only be achieved in sub-3 nm wide graphene nanoribbons (GNRs), but real fabrication of such ultranarrow GNRs still remains a critical challenge. Herein, we demonstrate an approach for the synthesis of ultranarrow and photoluminescent semiconducting GNRs by longitudinally unzipping single-walled carbon nanotubes. Atomic force microscopy reveals the unzipping process, and the resulting 2.2 nm wide GNRs are found to emit strong and sharp photoluminescence at ∼685 nm, demonstrating a very desirable semiconducting nature. This band gap of 1.8 eV is further confirmed by follow-up photoconductivity measurements, where a considerable photocurrent is generated, as the excitation wavelength becomes shorter than 700 nm. More importantly, our fabricated GNR field-effect transistors (FETs), by employing the hexagonal boron nitride-encapsulated heterostructure to achieve edge-bonded contacts, demonstrate a high current on/off ratio beyond 105 and carrier mobility of 840 cm2/V s, approaching the theoretical scattering limit in semiconducting GNRs at room temperature. Especially, highly aligned GNR bundles with lengths up to a millimeter are also achieved by prepatterning a template, and the fabricated GNR bundle FETs show a high on/off ratio reaching 105, well-defined saturation currents, and strong light-emitting properties. Therefore, GNRs produced by this method open a door for promising applications in graphene-based electronics and optoelectronics.

Fabrication of BP2T functionalized graphene via non-covalent π–π stacking interactions for enhanced ammonia detection

Graphene has stimulated great enthusiasm in a variety of fields, while its chemically inert surface still remains challenging for functionalization towards various applications. Herein, we report an approach to fabricate non-covalently functionalized graphene by employing π–π stacking interactions, which has potentialities for enhanced ammonia detection. 5,5′-Di(4-biphenylyl)-2,2′-bithiophene (BP2T) molecules are used in our work for the non-covalent functionalization through strong π–π interactions of aromatic structures with graphene, and systematic investigations by employing various spectroscopic and microscopic characterization methods confirm the successful non-covalent attachment of the BP2T on the top of graphene. From our gas sensing experiments, the BP2T functionalized graphene is promising for ammonia sensing with a 3-fold higher sensitivity comparing to that of the pristine graphene, which is mainly attributed to the enhanced binding energy between the ammonia and BP2T molecules derived by employing the Langmuir isotherm model. This work provides essential evidence of the π–π stacking interactions between graphene and aromatic molecules, and the reported approach also has the potential to be widely employed in a variety of graphene functionalizations for chemical detection.

Non-covalent functionalization of graphene has been achieved by employing π–π stacking interactions, and it is promising for ammonia detection with greatly enhanced sensitivity.

Ultra-strong stability of double-sided fluorinated monolayer graphene and its electrical property characterization

Fluorinated graphene has a tunable band gap that is useful in making flexible graphene electronics. But the carbon-fluorine (C-F) bonds in fluorinated graphene can be easily broken by increased temperature or electron beam irradiation. Here, we demonstrate that the stability of fluorinated graphene is mainly determined by its C-F configuration. The double-sided fluorinated graphene has a much stronger stability than the single-sided fluorinated graphene under the same irradiation dose. Density functional theory calculations show that the configuration of double-sided fluorinated graphene has a negative and low formation energy, indicating to be an energetically stable structure. On the contrary, the formation energy of single-sided fluorinated graphene is positive, leading to an unstable C-F bonding that is easily broken by the irradiation. Our findings make a new step towards a more stable and efficient design of graphene electronic devices.

Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots

A new approach to creating a new and locally nanostructured graphene-based material is reported. We studied the electric and structural properties of partially fluorinated graphene (FG) films obtained from an FG-suspension and nanostructured by high-energy Xe ions. Local shock heating in ion tracks is suggested to be the main force driving the changes. It was found that ion irradiation leads to the formation of locally thermally expanded FG and its cracking into nanoparticles with small (∼1.5-3 nm) graphene quantum dots (GQD), embedded in them. The bandgap of GQD was estimated as 1 -1.5 eV. A further developed approach was applied to correct the functional properties of printed FG-based crossbar memristors. Dielectric FG films with small quantum dots may offer prospects in graphene-based electronics due to their stability and promising properties.

Focused Electron Beam-Induced Deposition and Post-Growth Purification Using the Heteroleptic Ru Complex (η3-C3H5)Ru(CO)3Br

Focused electron beam-induced deposition using the heteroleptic complex (η³-C₃H₅)Ru(CO)₃Br as a precursor resulted in deposition of material with Ru content of 23 at. %. Transmission electron microscopy images indicated a nanogranular structure of pure Ru nanocrystals, embedded into a matrix containing carbon, oxygen, and bromine. The deposits were purified by annealing in a reactive 98% N₂/2% H₂ atmosphere at 300 °C, resulting in a reduction of contaminants and an increase of the Ru content to 83 at. %. Although a significant volume loss of 79% was found, the shrinkage was observed mostly for vertical thickness (around 75%). The lateral dimensions decreased much less significantly (around 9%). Deposition results, in conjunction with previous gas-phase and condensed-phase surface studies on the electron-induced reactions of (η³-C₃H₅)Ru(CO)₃Br, provide insights into the behavior of allyl, carbonyl, and bromide ligands under identical electron beam irradiation.

Origin of Room-Temperature Ferromagnetism in Hydrogenated Epitaxial Graphene on Silicon Carbide

The discovery of room-temperature ferromagnetism of hydrogenated epitaxial graphene on silicon carbide challenges for a fundamental understanding of this long-range phenomenon. Carbon allotropes with their dispersive electron states at the Fermi level and a small spin-orbit coupling are not an obvious candidate for ferromagnetism. Here we show that the origin of ferromagnetism in hydrogenated epitaxial graphene with a relatively high Curie temperature (>300 K) lies in the formation of curved specific carbon site regions in the graphene layer, induced by the underlying Si-dangling bonds and by the hydrogen bonding. Hydrogen adsorption is therefore more favourable at only one sublattice site, resulting in a localized state at the Fermi energy that can be attributed to a pseudo-Landau level splitting. This n = 0 level forms a spin-polarized narrow band at the Fermi energy leading to a high Curie temperature and larger magnetic moment can be achieved due to the presence of Si dangling bonds underneath the hydrogenated graphene layer.

The Influence of Copper Substrates on Irradiation Effects of Graphene: A Molecular Dynamics Study

In this paper, classical molecular dynamics simulations are conducted to study the graphene grown on copper substrates under ion beam irradiation, in which the emphasis is put on the influence copper substrate on a single graphene layer. It can be inferred that the actual transmission and distribution of kinetic energy from incident ion play important roles in irradiation-defects forming process together. The minimum value needed to generate defects in supported graphene is higher than 2.67 keV, which is almost twice the damage threshold as the suspended graphene sheet. This work indicates the presence of copper substrate increases the damage threshold of graphene. Additionally, our results provide an atomistic explanation for the graphene with copper substrate under ion irradiation, which is very important for engineering graphene.

Nanoresolution patterning of hydrogenated graphene by electron beam induced C-H dissociation

Direct writing of semi-conductive or insulative nanopatterns on graphene surfaces is one of the major challenges in the application of graphene in flexible and transparent electronic devices. Here, we demonstrate that nanoresolution patterning on hydrogenated graphene can be approached by using electron beam induced C-H dissociation when the electron accelerating voltage is beyond a critical voltage of 3 kV. The resolution of the patterning reaches 18 nm and remains constant as the accelerating voltage is beyond 15 kV. The origin of the nanoresolution pattering as well as the dependence of the resolution on voltage in this technique is well explained by studying the cross-section of the C-H bond under electron impact. This work constitutes a new approach to fabricate graphene-based electronic nanodevices, with the reduced hydrogenated graphene channel utilized as conductive or semi-conductive counterpart in the structure.

2D Material Science: Defect Engineering by Particle Irradiation

Two-dimensional (2D) materials are at the heart of many novel devices due to their unique and often superior properties. For simplicity, 2D materials are often assumed to exist in their text-book form, i.e., as an ideal solid with no imperfections. However, defects are ubiquitous in macroscopic samples and play an important ⁻ if not imperative ⁻ role for the performance of any device. Thus, many independent studies have targeted the artificial introduction of defects into 2D materials by particle irradiation. In our view it would be beneficial to develop general defect engineering strategies for 2D materials based on a thorough understanding of the defect creation mechanisms, which may significantly vary from the ones relevant for 3D materials. This paper reviews the state-of-the-art in defect engineering of 2D materials by electron and ion irradiation with a clear focus on defect creation on the atomic scale and by individual impacts. Whenever possible we compile reported experimental data alongside corresponding theoretical studies. We show that, on the one hand, defect engineering by particle irradiation covers a wide range of defect types that can be fabricated with great precision in the most commonly investigated 2D materials. On the other hand, gaining a complete understanding still remains a challenge, that can be met by combining advanced theoretical methods and improved experimental set-ups, both of which only now begin to emerge. In conjunction with novel 2D materials, this challenge promises attractive future opportunities for researchers in this field.

Supported Two-Dimensional Materials under Ion Irradiation: The Substrate Governs Defect Production

Focused ion beams perfectly suit for patterning two-dimensional (2D) materials, but the optimization of irradiation parameters requires full microscopic understanding of defect production mechanisms. In contrast to freestanding 2D systems, the details of damage creation in supported 2D materials are not fully understood, whereas the majority of experiments have been carried out for 2D targets deposited on substrates. Here, we suggest a universal and computationally efficient scheme to model the irradiation of supported 2D materials, which combines analytical potential molecular dynamics with Monte Carlo simulations and makes it possible to independently assess the contributions to the damage from backscattered ions and atoms sputtered from the substrate. Using the scheme, we study the defect production in graphene and MoS₂ sheets, which are the two most important and wide-spread 2D materials, deposited on a SiO₂ substrate. For helium and neon ions with a wide range of initial ion energies including those used in a commercial helium ion microscope (HIM), we demonstrate that depending on the ion energy and mass, the defect production in 2D systems can be dominated by backscattered ions and sputtered substrate atoms rather than by the direct ion impacts and that the amount of damage in 2D materials heavily depends on whether a substrate is present or not. We also study the factors which limit the spatial resolution of the patterning process. Our results, which agree well with the available experimental data, provide not only insights into defect production but also quantitative information, which can be used for the minimization of damage during imaging in HIM or optimization of the patterning process.

Enhancing the stiffness of vertical graphene sheets through ion beam irradiation and fluorination

Many applications of graphene can benefit from the enhanced mechanical robustness of graphene-based components. We report how the stiffness of vertical graphene (VG) sheets is affected by the introduction of defects and fluorination, both separately and combined. The defects were created using a high-energy ion beam while fluorination was performed in a XeF₂ etching system. After ion bombardment alone, the average effective reduced modulus (E _r), equal to ∼4.9 MPa for the as-grown VG sheets, approximately doubled to ∼10.0 MPa, while fluorination alone almost quadrupled it to ∼18.4 MPa. The maximum average E _r of ∼32.4 MPa was achieved by repeatedly applying fluorination and ion bombardment. This increase can be explained by the formation of covalent bonds between the VG sheets due to ion bombardment, as well as the conversion from sp² to sp³ and increased corrugation due to fluorination.

Highly selective covalent organic functionalization of epitaxial graphene

Graphene functionalization with organics is expected to be an important step for the development of graphene-based materials with tailored electronic properties. However, its high chemical inertness makes difficult a controlled and selective covalent functionalization, and most of the works performed up to the date report electrostatic molecular adsorption or unruly functionalization. We show hereafter a mechanism for promoting highly specific covalent bonding of any amino-terminated molecule and a description of the operating processes. We show, by different experimental techniques and theoretical methods, that the excess of charge at carbon dangling-bonds formed on single-atomic vacancies at the graphene surface induces enhanced reactivity towards a selective oxidation of the amino group and subsequent integration of the nitrogen within the graphene network. Remarkably, functionalized surfaces retain the electronic properties of pristine graphene. This study opens the door for development of graphene-based interfaces, as nano-bio-hybrid composites, fabrication of dielectrics, plasmonics or spintronics.

Towards stoichiometric analogues of graphene: graphane, fluorographene, graphol, graphene acid and others

Stoichiometric derivatives of graphene, having well-defined chemical structure and well-defined chemical bonds, are of a great interest to the 2D materials research.