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Sharma A, Rangra VS. Hydrogenation driven ultra-low lattice thermal conductivity in β12borophene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:205704. [PMID: 38335552 DOI: 10.1088/1361-648x/ad2800] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2023] [Accepted: 02/09/2024] [Indexed: 02/12/2024]
Abstract
Borophene gathered large interest owing to its polymorphism and intriguing properties such as Dirac point, inherent metallicity, etc but oxidation limits its capabilities. Hydrogenated borophene was recently synthesised experimentally to harness its applications. Motivated by experimental work, in this paper, using first-principles calculations and Boltzmann transport theory, we study the freestandingβ12borophene nanosheet doped and functionalised with hydrogen (H), lithium (Li), beryllium (Be), and carbon (C) atoms at differentβ12lattice sites. Among all possible configurations, we screen two stable candidates, pristine and hydrogenatedβ12borophene nanosheets. Both nanosheets possess dynamic and mechanical stability while the hydrogenated sheet has different anisotropic metallicity compared to pristine sheet leading to enhancement in brittle behaviour. Electronic structure calculations reveal that both nanosheets host Dirac cones (DCs), while hydrogenation leads to shift and enhancement in tilt of the DCs. Further hydrogenation leads to the appearance of additional Fermi pockets in the Fermi surface. Transport calculations reveals that the lattice thermal conductivity changes from 12.51 to 0.22 W m-1 K-1(along armchair direction) and from 4.42 to 0.07 W m-1 K-1(along zigzag direction) upon hydrogenation at room temperature (300 K), demonstrating a large reduction by two orders of magnitude. Such reduction is mainly attributed to decreased phonon mean free path and relaxation time along with the enhanced phonon scattering rates stemming from high frequency phonon flat modes in hydrogenated nanosheet. Comparatively larger weighted phase space leads to increased anharmonic scattering in hydrogenated nanosheet contributing to ultra-low lattice thermal conductivity. Consequently, hydrogenatedβ12nanosheet exhibits a comparatively higher thermoelectric figure of merit (∼0.75) at room temperature along armchair direction. Our study demonstrates the effects of functionalisation on transport properties of freestandingβ12borophene nanosheets which can be utilised to enhance the thermoelectric performance in two-dimensional (2D) systems and expand the applications of boron-based 2D materials.
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Affiliation(s)
- Ashish Sharma
- Department of Physics, Himachal Pradesh University, Summer Hill, Shimla, Himachal Pradesh 171005, India
| | - Vir Singh Rangra
- Department of Physics, Himachal Pradesh University, Summer Hill, Shimla, Himachal Pradesh 171005, India
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2
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Liu X, Ma R, Liu J, Zheng S, Zhong Q, Dong Y, Hu T. Metasurface-assisted amorphous germanium-tin waveguide bolometer for mid-infrared photodetection. OPTICS EXPRESS 2024; 32:3501-3511. [PMID: 38297570 DOI: 10.1364/oe.512423] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Accepted: 01/06/2024] [Indexed: 02/02/2024]
Abstract
An amorphous germanium-tin (a-Ge0.83Sn0.17) waveguide bolometer featuring a one-dimension (1D) metasurface absorber is proposed for mid-infrared photodetection at room-temperature. The device is based on the germanium-on-silicon (GOS) photonic platform. The impacts of the 1D metasurface on the performances of the waveguide bolometer are investigated. The responsivity of the a-Ge0.83Sn0.17 waveguide bolometer could be significantly enhanced by the metasurface. A responsivity of around -3.17%/µW within the 4.1 ∼ 4.3 µm wavelength range is achieved. In addition, a 3-dB roll-off frequency higher than 10 kHz is obtained.
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Lin YQ, Yang Q, Wang ZQ, Geng HY, Cheng Y. Janus 2H-MXTe (M = Zr, Hf; X = S, Se) monolayers with outstanding thermoelectric properties and low lattice thermal conductivities. Phys Chem Chem Phys 2023; 25:31312-31325. [PMID: 37955953 DOI: 10.1039/d3cp04118b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
Two-dimensional (2D) materials have been one of the most popular objects in the research field of thermoelectric (TE) materials and have attracted substantial attention in recent years. Inspired by the synthesized 2H-MoSSe and numerous theoretical studies, we systematically investigated the electronic, thermal, and TE properties of Janus 2H-MXTe (M = Zr and Hf; X = S and Se) monolayers by using first-principles calculations. The phonon dispersion curves and AIMD simulations confirm the thermodynamic stabilities. Moreover, Janus 2H-MXTe were evaluated as indirect band-gap semiconductors with band gaps ranging from 0.56 to 0.90 eV using the HSE06 + SOC method. To evaluate the TE performance, firstly, we calculated the temperature-dependent carrier relaxation time with acoustic phonon scattering τac, impurity scattering τimp, and polarized scattering τpol. Secondly, the calculation of lattice thermal conductivity (κl) shows that these monolayers possess relatively poor κl with values of 3.4-5.4 W mK-1 at 300 K, which is caused by the low phonon lifetime and group velocity. After computing the electronic transport properties, we found that the n-type doped Janus 2H-MXTe monolayers exhibit a high Seebeck coefficient exceeding 200 μV K-1 at 300 K, resulting in a high TE power factor. Eventually, combining the electrical and thermal conductivities, the optimal dimensionless figure of merit (zT) at 300 K (900 K) can be obtained, which is 0.94 (3.63), 0.51 (2.57), 0.64 (2.72), and 0.50 (1.98) for n-type doping of ZrSeTe, HfSeTe, ZeSTe, and HfSTe monolayers. Particularly, the ZrSeTe monolayer shows the best TE performance with the maximal zT value. These results indicate the excellent application potential of Janus 2H-MXTe (M = Zr and Hf; X = S and Se) monolayers in TE materials.
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Affiliation(s)
- Ying-Qin Lin
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China.
| | - Qiu Yang
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China.
| | - Zhao-Qi Wang
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, China
| | - Yan Cheng
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China.
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Tang S, Wan D, Bai S, Fu S, Wang X, Li X, Zhang J. Enhancing phonon thermal transport in 2H-CrX 2 (X = S and Se) monolayers through robust bonding interactions. Phys Chem Chem Phys 2023; 25:22401-22414. [PMID: 37581216 DOI: 10.1039/d3cp03420h] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Inspired by the groundbreaking discovery of the 2H-MoS2 monolayer with outstanding physical properties, the electronic structure, structural stability, and thermal transport of 2H-CrX2 (X = S and Se) monolayers are theoretically evaluated using density functional theory (DFT) calculations and semiempirical Boltzmann transport theory. The 2H-CrX2 (X = S and Se) monolayers are direct semiconductors with the bandgaps of 0.91 and 0.69 eV. The elastic modulus and phonon dispersion curve analysis show that the 2H-CrX2 (X = S and Se) monolayers possess excellent mechanical and dynamic stabilities on account of elastic constants satisfying the Born-Huang criterion and the absence of negative frequencies. The thermal stabilities of the 2H-CrX2 (X = S and Se) monolayers at 300 K are proved by ab initio molecular dynamics (AIMD) simulations, as evidenced by the slight changes in the structural evolution and small fluctuation in total energy. High thermal conductivities of 131.7 and 88.6 W m-1 K-1 are discovered for 2H-CrS2 and 2H-CrSe2 monolayers at 300 K. Further analysis of the phonon group velocity, phonon relaxation time, and Grüneisen parameter shows that the high lattice thermal conductivities of 2H-CrX2 (X = S and Se) monolayers could be attributed to the great bond strength, large Young's modulus, relatively small atomic mass, high phonon group velocity, and long phonon relaxation time. In addition, the various scattering mechanisms are further considered in the calculations of phonon thermal transport to evaluate the effect of the scattering rates of the 2H-CrS2 and 2H-CrSe2 monolayers on the lattice thermal conductivity, and the determinative role is found for the phonon boundary scattering. Our present study would not only offer a fundamental understanding of the thermal transport properties of the 2H-CrX2 (X = S and Se) monolayers, but also provide theoretical guidelines for the experimental investigation of thermal management materials with 2H-phase.
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Affiliation(s)
- Shuwei Tang
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
- Faculty of Chemistry, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Da Wan
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Shulin Bai
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Shengkai Fu
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Xinyu Wang
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Xiaodong Li
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Jingyi Zhang
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
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Liu G, Guo A, Cao F, Ju W, Wang Z, Wang H, Li GL, Gao Z. Ultrahigh thermoelectric performance of Janus α-STe 2 and α-SeTe 2 monolayers. Phys Chem Chem Phys 2022; 24:28295-28305. [DOI: 10.1039/d2cp03659b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Janus α-STe2 and α-SeTe2 monolayers are investigated systematically using first-principles calculations combined with semiclassical Boltzmann transport theory.
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Affiliation(s)
- Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Aiqing Guo
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Fengli Cao
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Weiwei Ju
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Zhaowu Wang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Hui Wang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Guo-Ling Li
- Chemistry and Chemical Engineering Guangdong Laboratory, Shantou 515063, People's Republic of China
| | - Zhibin Gao
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, People's Republic of China
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Cao SH, Zhang T, Hu CE, Chen XR, Geng HY. Electronic and thermoelectric properties of semiconducting Bi 2SSe 2 and Bi 2S 2Se monolayers with high optical absorption. Phys Chem Chem Phys 2022; 24:26753-26763. [DOI: 10.1039/d2cp03708d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Accurate effective mass via precise 3D-band calculations of two new 2D semiconductors Bi2SSe2 and Bi2S2Se with high optical absorption.
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Affiliation(s)
- Shu-Hao Cao
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065, China
| | - Tian Zhang
- College of Physics and Electronic Engineering, Sichuan Normal University, Hengdu, 610066, China
| | - Cui-E Hu
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 400047, China
| | - Xiang-Rong Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, 610065, China
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang, 621900, China
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Chen SB, Liu G, Yan WJ, Hu CE, Chen XR, Geng HY. Biaxial Tensile Strain-Induced Enhancement of Thermoelectric Efficiency of α-Phase Se 2Te and SeTe 2 Monolayers. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 12:40. [PMID: 35009989 PMCID: PMC8746480 DOI: 10.3390/nano12010040] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 12/07/2021] [Accepted: 12/17/2021] [Indexed: 06/14/2023]
Abstract
Thermoelectric (TE) materials can convert waste heat into electrical energy, which has attracted great interest in recent years. In this paper, the effect of biaxial-tensile strain on the electronic properties, lattice thermal conductivity, and thermoelectric performance of α-phase Se2Te and SeTe2 monolayers are calculated based on density-functional theory and the semiclassical Boltzmann theory. The calculated results show that the tensile strain reduces the bandgap because the bond length between atoms enlarges. Moreover, the tensile strain strengthens the scatting rate while it weakens the group velocity and softens the phonon model, leading to lower lattice thermal conductivity kl. Simultaneously, combined with the weakened kl, the tensile strain can also effectively modulate the electronic transport coefficients, such as the electronic conductivity, Seebeck coefficient, and electronic thermal conductivity, to greatly enhance the ZT value. In particular, the maximum n-type doping ZT under 1% and 3% strain increases up to six and five times higher than the corresponding ZT without strain for the Se2Te and SeTe2 monolayers, respectively. Our calculations indicated that the tensile strain can effectively enhance the thermoelectric efficiency of Se2Te and SeTe2 monolayers and they have great potential as TE materials.
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Affiliation(s)
- Shao-Bo Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China;
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, China;
| | - Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China;
| | - Wan-Jun Yan
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, China;
| | - Cui-E Hu
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China
| | - Xiang-Rong Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China;
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, China;
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Zhang KC, Cheng LY, Shen C, Li YF, Liu Y, Zhu Y. Thickness-dependent anisotropic transport of phonons and charges in few-layered PdSe 2. Phys Chem Chem Phys 2021; 23:18869-18884. [PMID: 34612425 DOI: 10.1039/d1cp00992c] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
So far, layered PdSe2 has attracted much attention due to its completely tunable band-gap with varying layer numbers, yet the thickness-dependent transporting properties have been rarely studied. We have systematically studied the electronic structures, phonon and charge transport properties, and thermoelectric properties of few-layered (from 1L to 4L) and bulk PdSe2 by first-principles calculations and Boltzmann transport theory. As the thickness increases, the energy levels of band edges relative to 4s of selenium move oppositely due to their different bonding states, leading to the power-law decrease of the band-gap. Meanwhile, the electron effective mass decreases rapidly while the hole effective mass increases significantly compared with those unperturbed. Calculations on elastic constants reveal that both bulk and few-layered PdSe2 are mechanically stable, and the bulk is ductile with a Poisson's ratio of 0.27. The shifts of Raman active modes with respect to the thickness as well as their Gruneisen parameters are analyzed and the underlying physics is discussed. At room temperature, the thermal conductivities of the bulk are 7.7, 10.1 and 0.9 W m-1 K-1 along the a, b and c axes, respectively. It is found that the low-frequency modes (<2.0 THz) contribute about 80% of in-plane thermal conductivities. Due to the enhanced contribution from the ZA mode, the thermal conductivity of few-layered PdSe2 is much larger than that of the bulk. The ZA mode is mainly scattered by itself and the Umklapp scattering dominates in the process as the thickness increases. Calculations on charge transport reveal that the electron mobility increases from 2.5-13.2 (1L) to 121.9-167.8 (4L) cm2 V-1 s-1 with the decreasing anisotropy μb/μa, while the hole mobility remains to be ∼20 cm2 V-1 s-1, which is in good agreement with the experimental results. Calculations on the thermoelectric properties reveal that the ZT value as well as the power factor increases largely as the thickness increases and it gets to be optimum for the triple layer. Interestingly, the transport of electrons and phonons is decoupled along the out-of-plane direction, which makes bulk PdSe2 exhibit good thermoelectric performance along the c axis.
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Affiliation(s)
- Kai-Cheng Zhang
- School of Physical Science and Technology, Bohai University, Jinzhou 121013, China.
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Chen S, Tao WL, Zhou Y, Zeng ZY, Chen XR, Geng HY. Novel thermoelectric performance of 2D 1T- Se 2Te and SeTe 2with ultralow lattice thermal conductivity but high carrier mobility. NANOTECHNOLOGY 2021; 32:455401. [PMID: 34348253 DOI: 10.1088/1361-6528/ac1a91] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2021] [Accepted: 08/02/2021] [Indexed: 06/13/2023]
Abstract
The design and search for efficient thermoelectric materials that can directly convert waste heat into electricity have been of great interest in recent years since they have practical applications in overcoming the challenges of global warming and the energy crisis. In this work, two new two-dimensional 1T-phase group-VI binary compounds Se2Te and SeTe2with outstanding thermoelectric performances are predicted using first-principles calculations combined with Boltzmann transport theory. The dynamic stability is confirmed based on phonon dispersion. It is found that the spin-orbit coupling effect has a significant impact on the band structure of SeTe2, and induces a transformation from indirect to direct band gap. The electronic and phononic transport properties of the Se2Te and SeTe2monolayer are calculated and discussed. High carrier mobility (up to 3744.321 and 2295.413 cm2V-1S-1for electron and hole, respectively) is exhibited, suggesting great applications in nanoelectronic devices. Furthermore, the maximum thermoelectric figure of meritzTof SeTe2for n-type and p-type is 2.88, 1.99 and 5.94, 3.60 at 300 K and 600 K, respectively, which is larger than that of most reported 2D thermoelectric materials. The surprising thermoelectric properties arise from the ultralow lattice thermal conductivitykl(0.25 and 1.89 W m-1K-1for SeTe2and Se2Te at 300 K), and the origin of ultralow lattice thermal conductivity is revealed. The present results suggest that 1T-phase Se2Te and SeTe2monolayer are promising candidates for thermoelectric applications.
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Affiliation(s)
- ShaoBo Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, People's Republic of China
| | - Wang-Li Tao
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Yu Zhou
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Zhao-Yi Zeng
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, People's Republic of China
| | - Xiang-Rong Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, People's Republic of China
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Islam ASMJ, Islam MS, Islam MR, Stampfl C, Park J. Thermal transport in monolayer zinc-sulfide: effects of length, temperature and vacancy defects. NANOTECHNOLOGY 2021; 32:435703. [PMID: 34243178 DOI: 10.1088/1361-6528/ac12ec] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2021] [Accepted: 07/09/2021] [Indexed: 06/13/2023]
Abstract
Of late, atomically thin two-dimensional zinc-sulfide (2D-ZnS) shows great potential for advanced nanodevices and as a substitute to graphene and transition metal di-chalcogenides owing to its exceptional optical and electronic properties. However, the functional performance of nanodevices significantly depends on the effective heat management of the system. In this paper, we explored the thermal transport properties of 2D-ZnS through molecular dynamics simulations. The impact of length, temperature, and vacancy defects on the thermal properties of 2D-ZnS are systematically investigated. We found that the thermal conductivity (TC) rises monotonically with increasing sheet length, and the bulk TC of ∼30.67 W mK-1is explored for an infinite length ZnS. Beyond room temperature (300 K), the TC differs from the usual 1/Trule and displays an abnormal, slowly declining behavior. The point vacancy (PV) shows the largest decrease in TC compared to the bi vacancy (BV) defects. We calculated phonon modes for various lengths, temperatures, and vacancies to elucidate the TC variation. Conversely, quantum corrections are used to avoid phonon modes' icing effects on the TC at low temperatures. The obtained phonon density of states (PDOS) shows a softening and shrinking nature with increasing temperature, which is responsible for the anomaly in the TC at high temperatures. Owing to the increase of vacancy concentration, the PDOS peaks exhibit a decrease for both types of defects. Moreover, the variation of the specific heat capacity and entropy with BV and PV signify our findings of 2D-ZnS TC at diverse concentrations along with the different forms of vacancies. The results elucidated in this study will be a guide for efficient heat management of ZnS-based optoelectronic and nano-electronic devices.
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Affiliation(s)
- A S M Jannatul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, United States of America
| | - Md Rasidul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Catherine Stampfl
- School of Physics, The University of Sydney, New South Wales 2006, Australia
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, United States of America
- School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada
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Rahman MH, Islam MS, Islam MS, Chowdhury EH, Bose P, Jayan R, Islam MM. Phonon thermal conductivity of the stanene/hBN van der Waals heterostructure. Phys Chem Chem Phys 2021; 23:11028-11038. [PMID: 33942827 DOI: 10.1039/d1cp00343g] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
We use classical non-equilibrium molecular dynamics (NEMD) simulations to investigate the phonon thermal conductivity (PTC) of hexagonal boron nitride (hBN) supported stanene. At first, we examine the length dependent PTCs of bare stanene and hBN, and the stanene/hBN heterostructure and realize the dominance of the hBN layer to dictate the PTC in the heterostructure system. Afterward, we assess the length-independent bulk PTCs of these materials. The bulk PTCs at room temperature are found as ∼15.20 W m-1 K-1, ∼550 W m-1 K-1, and ∼232 W m-1 K-1 for bare stanene and hBN, and stanene/hBN, respectively. Moreover, our simulations reveal that bare stanene exhibits a substantially lower PTC compared to bare hBN, and the predicted PTC of stanene/hBN lies between those of stand-alone stanene and hBN. We also found that the PTC obtained for the stanene/hBN system from NEMD simulations nicely agrees with the theoretical formula developed to predict the PTC of heterostructures of two distinct materials. Temperature studies suggest that the PTC of the stanene/hBN heterostructure system follows a decreasing trend with increasing temperature. Additionally, corresponding phonon density of states (PDOS) and phonon dispersion data are provided to comprehensively understand the phonon properties of bare stanene and hBN, and stanene/hBN. Overall, this NEMD study would offer a deep understating towards the PTC of the stanene/hBN heterostructure and would widen the scope of its successful operations in future nanoelectronic, spintronic, and thermoelectric devices.
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Affiliation(s)
- Md Habibur Rahman
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Md Shahriar Islam
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Md Saniul Islam
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Emdadul Haque Chowdhury
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Pritom Bose
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
| | - Rahul Jayan
- Department of Mechanical Engineering, Wayne State University, Detroit MI - 48202, USA.
| | - Md Mahbubul Islam
- Department of Mechanical Engineering, Wayne State University, Detroit MI - 48202, USA.
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Keshri SP, Medhi A. Enhanced thermoelectric efficiency of monolayer InP 3under strain: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:225701. [PMID: 33601361 DOI: 10.1088/1361-648x/abe799] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2020] [Accepted: 02/18/2021] [Indexed: 06/12/2023]
Abstract
We study the thermoelectric properties of monolayer indium triphosphide (InP3) under uniaxial compressive and tensile strains using density functional theory in conjunction with Boltzmann transport formalism. InP3is a recently predicted two-dimensional (2D) material with a host of interesting multi-functional properties. Though InP3is a low lattice thermal conductivity material, its thermoelectric figure of merit,ZTis found to be low. We thoroughly examined how its thermoelectric transport properties evolve under external strain. We find that the tensile (t) and compressive (c) strains have contrasting effects on the transport coefficients, both leading to the same effect of enhancing theZTvalue strongly. Whilet-strain enhances the power factor dramatically,c-strain gives rise to an ultra-low lattice thermal conductivity. Both these effects lead to an enhancement ofZTvalue at high temperatures by an order of magnitude compared to the corresponding value for free InP3. The maximumZTvalue of InP3at 800 K is found to be ∼0.4 undert-strain and ∼0.32 underc-strain, values which are comparable to those observed for some of the leading 2D thermoelectric materials. Another finding relevant to optoelectronic properties is that underc-strain the material shows a transition from an indirect to a direct band gap semiconductor with an accompanying increase in the valley degeneracy. The structural, electronic, and thermal properties of the material are thoroughly analyzed and discussed.
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Affiliation(s)
- Sonu Prasad Keshri
- Indian Institute of Science Education and Research Thiruvananthapuram, Kerala 695551, India
| | - Amal Medhi
- Indian Institute of Science Education and Research Thiruvananthapuram, Kerala 695551, India
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14
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Yang J, Johnson Goh KE, Yu ZG, Wong RE, Zhang YW. A first-principles study on strain engineering of monolayer stanene for enhanced catalysis of CO 2 reduction. CHEMOSPHERE 2021; 268:129317. [PMID: 33360000 DOI: 10.1016/j.chemosphere.2020.129317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2020] [Revised: 12/05/2020] [Accepted: 12/11/2020] [Indexed: 06/12/2023]
Abstract
Using first-principles calculations, we investigated the changes in the lattice structure, electronic structures and catalytic performance for CO2 reduction reaction (CO2RR) of stanene under applied strain. Our calculations showed that the initial buckled honeycomb structure of free-standing stanene becomes increasingly flat upon the increase of tensile strain. Stanene remains its gapless semiconductor characteristic within the strain range of -2% and 2%, beyond which a semiconductor-to-metal transition occurs. Under strain, the adsorption of CO is weakened, which can facilitate the desorption of product CO, enabling a strained stanene to be a better catalyst for CO2RR to CO than strain-free stanene. In particular, the stanene with 4% strain may give rise to the best performance because of the weakest CO adsorption (Eadsorp= -0.15 eV). The adsorption of intermediate product COOH on stanene is tunable with strain. We also evaluated the overall catalytic performance of the strained stanene based on the adsorption of CO and COOH and the selectivity against HER. If the reduction of COOH is governed by adsorption of the intermediate, a 10% strain may give a stronger COOH adsorption, weaker CO adsorption and better selectivity against HER, leading to an enhanced catalytic performance for CO2RR to CO. On the other hand, if the reduction of COOH is governed by desorption, a tensile strain higher than 4% may result in an enhanced catalytic performance. Our study here suggests that strain-tuned stanene might serve as an optimal electrocatalyst for CO2RR to CO with a high activity and selectivity.
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Affiliation(s)
- Jing Yang
- Institute of High Performance Computing, A∗STAR, Singapore.
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering, A∗STAR, Singapore; Department of Physics, National University of Singapore, Singapore
| | - Zhi Gen Yu
- Institute of High Performance Computing, A∗STAR, Singapore
| | - Rui En Wong
- Department of Materials Science and Engineering, National University of Singapore, Singapore
| | - Yong-Wei Zhang
- Institute of High Performance Computing, A∗STAR, Singapore
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15
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Ouyang J, Zhang L, Li L, Chen W, Tang Z, Ji X, Feng C, Tao N, Kong N, Chen T, Liu YN, Tao W. Cryogenic Exfoliation of 2D Stanene Nanosheets for Cancer Theranostics. NANO-MICRO LETTERS 2021; 13:90. [PMID: 34138343 PMCID: PMC8006518 DOI: 10.1007/s40820-021-00619-1] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2020] [Accepted: 01/31/2021] [Indexed: 05/06/2023]
Abstract
Stanene (Sn)-based materials have been extensively applied in industrial production and daily life, but their potential biomedical application remains largely unexplored, which is due to the absence of the appropriate and effective methods for fabricating Sn-based biomaterials. Herein, we explored a new approach combining cryogenic exfoliation and liquid-phase exfoliation to successfully manufacture two-dimensional (2D) Sn nanosheets (SnNSs). The obtained SnNSs exhibited a typical sheet-like structure with an average size of ~ 100 nm and a thickness of ~ 5.1 nm. After PEGylation, the resulting PEGylated SnNSs (SnNSs@PEG) exhibited good stability, superior biocompatibility, and excellent photothermal performance, which could serve as robust photothermal agents for multi-modal imaging (fluorescence/photoacoustic/photothermal imaging)-guided photothermal elimination of cancer. Furthermore, we also used first-principles density functional theory calculations to investigate the photothermal mechanism of SnNSs, revealing that the free electrons in upper and lower layers of SnNSs contribute to the conversion of the photo to thermal. This work not only introduces a new approach to fabricate 2D SnNSs but also establishes the SnNSs-based nanomedicines for photonic cancer theranostics. This new type of SnNSs with great potential in the field of nanomedicines may spur a wave of developing Sn-based biological materials to benefit biomedical applications.
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Affiliation(s)
- Jiang Ouyang
- The First Affiliated Hospital, Department of Chemistry, Jinan University, Guangzhou, 510632, Guangdong, People's Republic of China
- Center for Nanomedicine and Department of Anesthesiology, Brigham and Women's Hospital, Harvard Medical School, Boston, MA, 02115, USA
- College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, Hunan, People's Republic of China
| | - Ling Zhang
- College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, Hunan, People's Republic of China
| | - Leijiao Li
- School of Chemistry and Environmental Engineering, Changchun University of Science and Technology, Changchun, 130022, Jilin Province, People's Republic of China
| | - Wei Chen
- Center for Nanomedicine and Department of Anesthesiology, Brigham and Women's Hospital, Harvard Medical School, Boston, MA, 02115, USA
| | - Zhongmin Tang
- Center for Nanomedicine and Department of Anesthesiology, Brigham and Women's Hospital, Harvard Medical School, Boston, MA, 02115, USA
| | - Xiaoyuan Ji
- Center for Nanomedicine and Department of Anesthesiology, Brigham and Women's Hospital, Harvard Medical School, Boston, MA, 02115, USA
| | - Chan Feng
- Center for Nanomedicine and Department of Anesthesiology, Brigham and Women's Hospital, Harvard Medical School, Boston, MA, 02115, USA
| | - Na Tao
- College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, Hunan, People's Republic of China
| | - Na Kong
- Center for Nanomedicine and Department of Anesthesiology, Brigham and Women's Hospital, Harvard Medical School, Boston, MA, 02115, USA
| | - Tianfeng Chen
- The First Affiliated Hospital, Department of Chemistry, Jinan University, Guangzhou, 510632, Guangdong, People's Republic of China.
| | - You-Nian Liu
- College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Wei Tao
- Center for Nanomedicine and Department of Anesthesiology, Brigham and Women's Hospital, Harvard Medical School, Boston, MA, 02115, USA.
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16
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Zhou Y, Liang AK, Zeng ZY, Chen XR, Geng HY. Anisotropic lattice thermal conductivity in topological semimetal ZrGe X( X=S, Se, Te): a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:135401. [PMID: 33401256 DOI: 10.1088/1361-648x/abd8b9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2020] [Accepted: 01/05/2021] [Indexed: 06/12/2023]
Abstract
Topological semimetals have attracted significant attentions owing to their potential applications in numerous fields such as low-power electron devices and quantum computation, which are closely related to their thermal transport properties. In this work, the phonon transport properties of topological Dirac nodal-line semimetals ZrGeX(X= S, Se, Te) with the PbClF-type structures are systematically studied using the first-principles calculations combined with the Boltzmann transport theory. The obtained lattice thermal conductivities show an obvious anisotropy, which is caused by the layer structures of ZrGeX(X= S, Se, Te). The room-temperature lattice conductivity of ZrGeTe alongcdirection is found to be as low as 0.24 W m-1 K-1, indicating that it could be of great significance in the fields of thermal coating materials and solar cell absorber. In addition, we extract each phonon branch from group velocities, phonon scattering rates, Grüneisen parameters, and phase space volumes to investigate the mechanism underlying the low thermal conductivity. It is concluded that the difference of thermal conductivities of three materials may be caused by the number of scattering channels and the effect of anharmonic. Furthermore, the phonon mean free path alongadirection is relatively longer. Nanostructures or polycrystalline structures may be effective to reduce the thermal conductivity and improve the thermoelectric properties.
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Affiliation(s)
- Yu Zhou
- College of Physics, Sichuan University, Chengdu 610064, People's Republic of China
| | - A-Kun Liang
- Departamento de Física Aplicada-ICMUV-MALTA Consolider Team, Universitat de València, Burjassot (Valencia) 46100, Spain
| | - Zhao-Yi Zeng
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, People's Republic of China
| | - Xiang-Rong Chen
- College of Physics, Sichuan University, Chengdu 610064, People's Republic of China
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, People's Republic of China
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17
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Yang Z, Yuan K, Meng J, Zhang X, Tang D, Hu M. Why thermal conductivity of CaO is lower than that of CaS: a study from the perspective of phonon splitting of optical mode. NANOTECHNOLOGY 2021; 32:025709. [PMID: 33055376 DOI: 10.1088/1361-6528/abbb4c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Generally speaking, for materials with the same structure, the thermal conductivity is higher for lighter atomic masses. However, we found that the thermal conductivity of CaO is lower than that of CaS, despite the lighter atomic mass of O than S. To uncover the underlying physical mechanisms, the thermal conductivity of CaM (M = O, S, Se, Te) and the corresponding response to strain is investigated by performing first-principles calculations along with the phonon Boltzmann transport equation. For unstrained system, the order of thermal conductivity is CaS > CaO > CaSe > CaTe. This order remains unchanged in the strain range of -2% to 5%. When the compressive strain is larger than 2%, the thermal conductivity of CaO surpasses that of CaS and becomes the highest thermal conductivity material among the four compounds. By analyzing the mode-dependent phonon properties, the phonon lifetime is found to be dominant over other influential factors and leads to the disparate response of thermal conductivity under strain. Moreover, the changing trend of three-phonon scattering phase space is consistent with that of phonon lifetime, which is directly correlated to the phonon frequency gap induced by the LO-TO splitting. The variation of Born effective charge is found to be opposite for CaM. The Born effective charge of CaO decreases with tensile strain increasing, demonstrating stronger charge delocalization and lower ionicity, while the Born effective charges of CaS, CaSe, and CaTe show a dramatic increase. Such variation indicates that the bonding nature can be effectively tuned by external strain, thus affecting the phonon anharmonic properties and thermal conductivity. The difference of bonding nature is further confirmed by the band structure. Our results show that the bonding nature of CaM can be modulated by external strain and leads to disparate strain dependent thermal conductivity.
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Affiliation(s)
- Zhonghua Yang
- School of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang 110870, People's Republic of China
- Department of Mechanical Engineering, University of South Carolina, Columbia, SC 29201, United States of America
| | - Kunpeng Yuan
- Department of Mechanical Engineering, University of South Carolina, Columbia, SC 29201, United States of America
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Jin Meng
- School of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang 110870, People's Republic of China
| | - Xiaoliang Zhang
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Dawei Tang
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Ming Hu
- Department of Mechanical Engineering, University of South Carolina, Columbia, SC 29201, United States of America
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18
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Yang X, Han D, Fan H, Wang M, Du M, Wang X. First-principles calculations of phonon behaviors in graphether: a comparative study with graphene. Phys Chem Chem Phys 2021; 23:123-130. [PMID: 33331842 DOI: 10.1039/d0cp03191g] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
Abstract
Recently, a two-dimensional (2D) oxocarbon monolayer, graphether, has been arousing extensive attention owing to its excellent electrical properties. In this work, we calculate the lattice thermal conductivity (k) of graphether and graphene using first-principles calculations and the phonon Boltzmann transport equation. At 300 K, the lattice thermal conductivities of graphether and graphene along the armchair direction are 600.91 W m-1 K-1 and 3544.41 W m-1 K-1, respectively. Moreover, the electron localization function is employed to reveal the origin of the anisotropic k of graphether. Furthermore, the harmonic and anharmonic properties of graphether and graphene are analyzed. We attribute the lower k of graphether to the smaller phonon group velocity and shorter phonon lifetime. Finally, the size effects of phonon transport in graphether and graphene are studied, and the results show that the lattice thermal conductivities are significantly dependent on the system length. The analysis of phonon behaviors in our study contributes to an in-depth understanding of the thermal transport in graphether for the first time, which provides valuable guidelines for graphether-based phonon engineering applications and 2D nanoelectronic devices.
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Affiliation(s)
- Xiaoheng Yang
- Institute of Thermal Science and Technology, Shandong University, Jinan 250061, China.
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19
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Ahammed S, Islam MS, Mia I, Park J. Lateral and flexural thermal transport in stanene/2D-SiC van der Waals heterostructure. NANOTECHNOLOGY 2020; 31:505702. [PMID: 33006320 DOI: 10.1088/1361-6528/abb491] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Thermal management is one of the key challenges in nanoelectronic and optoelectronic devices. The development of a van der Waals heterostructure (vdWH) using the vertical positioning of different two-dimensional (2D) materials has recently appeared as a promising way of attaining desirable electrical, optical, and thermal properties. Here, we explore the lateral and flexural thermal conductivity of stanene/2D-SiC vdWH utilizing the reverse non-equilibrium molecular dynamics simulation and transient pump-probe technique. The effects of length, area, coupling strength and temperature on the thermal transport are studied systematically. The projected lateral thermal conductivity of a stanene/2D-SiC hetero-bilayer is found to be 66.67 [Formula: see text], which is greater than stanene, silicene, germanene, MoSe2 and even higher than some hetero-bilayers, including MoS2/MoSe2 and stanene/silicene. The lateral thermal conductivity increases as the length increases, while it tends to decrease with increasing temperature. The computed flexural interfacial thermal resistance between stanene and 2D-SiC is 3.0622 [Formula: see text] [Formula: see text] K.m2 W-1, which is close to other 2D hetero-bilayers. The interfacial resistance between stanene and 2D-SiC is reduced by 70.49% and 50.118% as the temperature increases from 100 K to 600 K and the coupling factor increases from [Formula: see text] to [Formula: see text], respectively. In addition, various phonon modes are evaluated to disclose the fundamental mechanisms of thermal transport in the lateral and flexural direction of the hetero-bilayer. These results are important in order to understand the heat transport phenomena of stanene/2D-SiC vdWH, which could be useful for enhancing their promising applications.
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Affiliation(s)
- Shihab Ahammed
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Imon Mia
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, United States of America
- School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada
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20
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Gupta R, Dongre B, Bera C, Carrete J. The Effect of Janus Asymmetry on Thermal Transport in SnSSe. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2020; 124:17476-17484. [PMID: 32904867 PMCID: PMC7461144 DOI: 10.1021/acs.jpcc.0c03414] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/17/2020] [Revised: 06/28/2020] [Indexed: 06/11/2023]
Abstract
Several ternary "Janus" metal dichalcogenides such as {Mo,Zr,Pt}-SSe have emerged as candidates with significant potential for optoelectronic, piezoelectric, and thermoelectric applications. SnSSe, a natural option to explore as a thermoelectric given that its "parent" structures are SnS2 and SnSe2 has, however, only recently been shown to be mechanically stable. Here, we calculate the lattice thermal conductivities of the Janus SnSSe monolayer along with those of its parent dicalchogenides. The phonon frequencies of SnSSe are intermediate between those of SnSe2 and SnS2; however, its thermal conductivity is the lowest of the three and even lower than that of a random Sn[S0.5Se0.5]2 alloy. This can be attributed to the breakdown of inversion symmetry and manifests as a subtle effect beyond the reach of the relaxation-time approximation. Together with its low favorable power factor, its thermal conductivity confirms SnSSe as a good candidate for thermoelectric applications.
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Affiliation(s)
- Raveena Gupta
- Institute
of Nano Science and Technology, Habitat
Center, Phase-X, Mohali, Punjab 160062, India
- Centre
for Nanoscience and Nanotechnology, Panjab
University, Sector-25, Chandigarh 160036, India
| | - Bonny Dongre
- Institute
of Materials Chemistry, TU Wien, Vienna A-1060, Austria
| | - Chandan Bera
- Institute
of Nano Science and Technology, Habitat
Center, Phase-X, Mohali, Punjab 160062, India
| | - Jesús Carrete
- Institute
of Materials Chemistry, TU Wien, Vienna A-1060, Austria
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21
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Zhang KC, Li YF, Liu Y, Zhu Y. First-principles study on the anisotropic transport of electrons and phonons in monolayer and bulk GaTe: a comparative study. Phys Chem Chem Phys 2020; 22:15270-15280. [PMID: 32613997 DOI: 10.1039/d0cp02600j] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recently, monoclinic-phase GaTe has attracted much attention due to its potential applications in nanoelectronics. Despite the experimental research, theoretical studies on the thermal and transport properties, which are necessary to provide information for future applications, are still absent. We have systematically investigated the electronic, phonon and electron transporting, and thermoelectric properties of monolayer and bulk GaTe using first-principles calculations plus the Boltzmann transport equation. At the valence band maximum and conduction band minimum, the effective mass shows large anisotropy as the band dispersions are along different k-paths. The group velocity of acoustic modes also shows large anisotropy owing to the in-plane low-symmetry. Our calculations reveal that the in-plane thermal conductivities, κa and κb, take 3.5 and 8.9 W m-1 K-1, respectively, for the bulk at 300 K, compared to κa = 5.5 and κb = 10.4 W m-1 K-1 of the monolayer. Due to the van der Waals interactions between interlayers, the out-of-plane thermal conductivity is very small, κc = 1.8 W m-1 K-1. The difference between the in-plane thermal conductivities of the bulk and the monolayer can be attributed to the strengthened Umklapp scattering, which is caused by the stiffening of the lowest-frequency optical mode in the bulk. The hole mobilities of the bulk is found to be about 12-35 cm2 V-1 s-1 at 300 K, in good agreement with the experimental results. The monolayer is found to have smaller mobility but larger anisotropy than those of the bulk. Interestingly, the out-of-plane conductivity is anomalously larger than the in-plane one for the bulk, which is attributed to the orbital overlaps between the interlayer Te atoms. Moreover, n-type GaTe is found to have much larger mobility and anisotropy than the p-type one, which is useful for future applications. Compared with the case of monolayer GaTe, thermoelectric performance can be enhanced by one order of magnitude for the bulk GaTe by exploiting the out-of-plane thermal and electrical conductivities.
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Affiliation(s)
- Kai-Cheng Zhang
- College of Mathematics and Physics, Bohai University, Jinzhou 121013, China.
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22
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Mohanta MK, Rawat A, Jena N, Ahammed R, De Sarkar A. Superhigh flexibility and out-of-plane piezoelectricity together with strong anharmonic phonon scattering induced extremely low lattice thermal conductivity in hexagonal buckled CdX (X =S, Se) monolayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:355301. [PMID: 32340009 DOI: 10.1088/1361-648x/ab8d73] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2020] [Accepted: 04/27/2020] [Indexed: 06/11/2023]
Abstract
Although CdX (X = S, Se) has been mostly studied in the field of photocatalysis, photovoltaics, their intrinsic properties, such as, mechanical, piezoelectric, electron and phonon transport properties have been completely overlooked in buckled CdX monolayers. Ultra-low lattice thermal conductivity [1.08 W m-1K-1(0.75 W m-1K-1)] and high p-type Seebeck coefficient [1300μV K-1(850μV K-1)] in CdS (CdSe) monolayers have been found in this work based on first-principles DFT coupled to semi-classical Boltzmann transport equations, combining both the electronic and phononic transport. The dimensionless thermoelectric figure of merit is calculated to be 0.78 (0.5) in CdS (CdSe) monolayers at room temperature, which is comparable to that of two-dimensional (2D) tellurene (0.8), arsenene and antimonene (0.8), indicating its great potential for applications in 2D thermoelectrics. Such a low lattice thermal conductivity arise from the participation of both acoustic [91.98% (89.22%)] and optical modes [8.02% (10.78%)] together with low Debye temperature [254 K (187 K)], low group velocity [4 km s-1(3 km s-1)] in CdS (CdSe) monolayers, high anharmonicity and short phonon lifetime. Substantial cohesive energy (∼4-5 eV), dynamical and mechanical stability of the monolayers substantiate the feasibility in synthesizing the single layers in experiments. The inversion symmetry broken along thezdirection causes out-of-plane piezoelectricity. |d33| ∼ 21.6 pm V-1, calculated in CdS monolayer is found to be the highest amongst structures having atomic-layer thickness. Superlow Young's modulus ∼41 N m-1(31 N m-1) in CdS (CdSe) monolayers, which is comparable to that of planar CdS (29 N m-1) and TcTe2(34 N m-1), is an indicator of its superhigh flexibility. Direct semiconducting band gap, high carrier mobility (∼500 cm2V-1s-1) and superhigh flexibility in CdX monolayers signify its gigantic potential for applications in ultrathin, stretchable and flexible nanoelectronics. The all-round properties can be synergistically combined together in futuristic applications in nano-piezotronics as well.
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Affiliation(s)
- Manish Kumar Mohanta
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab-160062, India
| | - Ashima Rawat
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab-160062, India
| | - Nityasagar Jena
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab-160062, India
| | - Raihan Ahammed
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab-160062, India
| | - Abir De Sarkar
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab-160062, India
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Zhang X, Liu Y, Huang Q. Stable halogen 2D materials: the case of iodine and astatine. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:335301. [PMID: 32268317 DOI: 10.1088/1361-648x/ab87cf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2019] [Accepted: 04/08/2020] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) materials have applications towards electronic devices, energy storages, and catalysis,et al. So far, most of elemental 2D materials are composed based on groups IIIA, IVA or VA. To expand the 2D material family, the orbital hybridization becomes a key factor to determine stability. Here we predict that sp2d3hybridization of the outmost electrons in iodine and astatine can build up 2D triangle lattices, delta-iodiene and delta-astatiene, using first-principles calculations. Each atom is connected by σ bonds with nearest 6 atoms and the π bonds are thus introduced. The band gaps can approach zero because of interaction of unpaired single electron between each atom, if the identical bond length is reduced. By inducing compression strain, the Dirac points or topological nontrivial points can be created in the delta-iodiene and delta-astatiene. Our discovery paves a new way to construction of 2D materials.
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Affiliation(s)
- Xinyue Zhang
- School of Chemical Engineering, Sichuan University Chengdu, 610065, People's Republic of China
| | - Yu Liu
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Qingsong Huang
- School of Chemical Engineering, Sichuan University Chengdu, 610065, People's Republic of China
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24
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Mohanta MK, Sarkar AD. Tweaking the Physics of Interfaces between Monolayers of Buckled Cadmium Sulfide for a Superhigh Piezoelectricity, Excitonic Solar Cell Efficiency, and Thermoelectricity. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18123-18137. [PMID: 32223217 DOI: 10.1021/acsami.0c00864] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Interfaces of heterostructures are routinely studied for different applications. Interestingly, monolayers of the same material when interfaced in an unconventional manner can bring about novel properties. For instance, CdS monolayers, stacked in a particular order, are found to show unprecedented potential in the conversion of nanomechanical energy, solar energy, and waste heat into electricity, which has been systematically investigated in this work, using DFT-based approaches. Moreover, stable ultrathin structures showing strong capabilities for all kinds of energy conversion are scarce. The emergence of a very high out-of-plane piezoelectricity, |d33| ≈ 56 pm/V, induced by the inversion symmetry broken in the buckled structure helps to supersede the previously reported bulk wurzite GaN, AlN, and Janus multilayer structures of Mo- and W-based dichalcogenides. The piezoelectric coefficients have been found to be largely dependent on the relative stacking between the two layers. CdS bilayer is a direct band gap semiconductor, with its band edges straddling the water redox potential, thereby making it thermodynamically favorable for photocatalytic applications. Strain engineering facilitates its transition from type I to type II semiconductor in CdS bilayer stacked over monolayer boron phosphide, and the theoretically calculated power conversion efficiency (PCE) in the 2D excitonic solar cell exceeds 27% for a fill factor of 0.8, which is much higher than that in ZnO/CdS/CuInGaSe solar cell (20% efficiency). Thermoelectric properties have been investigated using semi classical Boltzmann transport equations for electrons and phonons within the constant relaxation time approximation coupled to deformation potential theory, which reveal ultralow thermal conductivity (κl ≈ 0.78 W m-1 K-1) at room temperature because of the presence of heavy element Cd, strong anharmonicity (high mode Gruneisen parameter at long wavelength, phonon lifetime <5 ps), low phonon group velocity (4 km/s), and low Debye temperature (260 K). Such a low thermal conductivity is lower than that of dumbbell silicene (2.86 W m-1 K-1), SnS2 (6.41 W m-1 K-1) and SnSe2 (3.82 W m-1 K-1), and SnP3 (4.97 W m-1 K-1). CdS bilayer shows a thermoelectric figure of merit (ZT) ≈ 0.8 for p-type and ∼0.7 for n-type doping at room temperature. Its ultrahigh carrier mobility (μe ≈ 2270 cm2 V-1 s-1) is higher than that of single-layer MoS2 and comparable to that in InSe. The versatile properties of CdS bilayer together with its all-round stability supported by ab initio molecular dynamics simulation, phonon dispersion, and satisfaction of Born-Huang stability criteria highlight its outstanding potential for applications in device fabrication and applications in next-generation nanoelectronics and energy harvesting.
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Affiliation(s)
- Manish Kumar Mohanta
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab 160062, India
| | - Abir De Sarkar
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab 160062, India
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25
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The effect of non-analytical corrections on the phononic thermal transport in InX (X = S, Se, Te) monolayers. Sci Rep 2020; 10:1093. [PMID: 31974441 PMCID: PMC6978339 DOI: 10.1038/s41598-020-57644-0] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2019] [Accepted: 12/24/2019] [Indexed: 12/03/2022] Open
Abstract
We investigate the effect of non-analytical corrections on the phonon thermal transport properties in two-dimensional indium chalcogenide compounds. The longitudinal optical (LO) and transverse optical (TO) branches in the phonon dispersion are split near the Γ-point. The lattice thermal conductivity of monolayer InS is increased by 30.2% under non-analytical corrections because of the large LO-TO splitting at Γ-point. The predicted lattice thermal conductivities with non-analytical corrections at room temperature are 57.1 W/mK, 44.4 W/mK and 33.1 W/mK for the monolayer InS, InSe and InTe, respectively. The lattice thermal conductivity can be effectively reduced by nanostructures because the representative mean free paths are found very large in these monolayers. By quantifying the relative contribution of the phonon modes to the lattice thermal conductivity, we predict that the longitudinal acoustic branch is the main contributor to the lattice thermal conductivity. Due to the low lattice thermalconductivities of these monolayers, they can be useful in the nanoscale thermoelectric devices.
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26
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Islam ASMJ, Islam MS, Ferdous N, Park J, Hashimoto A. Vacancy-induced thermal transport in two-dimensional silicon carbide: a reverse non-equilibrium molecular dynamics study. Phys Chem Chem Phys 2020; 22:13592-13602. [PMID: 32515451 DOI: 10.1039/d0cp00990c] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Because of its impressive electrical, thermal, and mechanical properties, two-dimensional silicon carbide (2D-SiC) has recently gained tremendous attention in the field of nanoelectronics and optoelectronics. Here, we investigated the effects of various types of defects such as bi-, point-, and mixed-vacancies on the thermal conductivity of 2D-SiC using reverse non-equilibrium molecular dynamics simulation. The effects of temperature variation on the thermal conductivity of vacancy-defected 2D-SiC were also studied. A significant reduction of the thermal conductivity was observed when the concentrations of the vacancies were increased. The point vacancy resulted in the thermal conductivity decreasing more quickly as compared to bi vacancy and mixed vacancy defects. Moreover, increasing the temperature of vacancy-defected 2D-SiC further reduced the thermal conductivity due to a strong phonon-vacancy scattering effect. Because of the introduction of vacancy defects in the acoustic phonon density of states (PDOS), a softening behavior in the intensity of the characteristic peaks is perceived, and with increasing temperature, a frequency shrinking is noted in the PDOS curves, both of which contribute to the reduction of the thermal conductivity. Additionally, rapid softening of the phonon transmission spectrum and increase in entropy were obtained for the point vacancy-defected structure, which clearly confirms our findings at different vacancy concentrations as well as for types of vacancies. These findings are very much imperative for realizing heat dissipation in nano- and optoelectronic devices based on 2D-SiC as well as for demonstrating an effective method for modulating 2D-SiC thermal conductivity through defect engineering.
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Affiliation(s)
- A S M Jannatul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh.
| | - Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh.
| | - Naim Ferdous
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh.
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, USA and School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada
| | - Akihiro Hashimoto
- Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan
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Hu Y, Li D, Yin Y, Li S, Zhou H, Zhang G. High thermal conductivity driven by the unusual phonon relaxation time platform in 2D monolayer boron arsenide. RSC Adv 2020; 10:25305-25310. [PMID: 35517492 PMCID: PMC9055285 DOI: 10.1039/d0ra04737f] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2020] [Accepted: 06/25/2020] [Indexed: 12/01/2022] Open
Abstract
The cubic boron arsenide (BAs) crystal has received extensive research attention because of its ultra-high thermal conductivity comparable to that of diamond. In this work, we performed a comprehensive study on the diffusive thermal properties of its two-dimensional (2D) counterpart, the monolayer honeycomb BAs (h-BAs), through solving the phonon Boltzmann transport equation combined with first-principles calculation. We found that unlike the pronounced contribution from out-of-plane acoustic phonons (ZA) in graphene, the high thermal conductivity (181 W m−1 K−1 at 300 K) of h-BAs is mainly contributed by in-plane phonon modes, instead of the ZA mode. This result is explained by the unique frequency-independent ‘platform’ region in the relaxation time of in-plane phonons. Moreover, we conducted a comparative study of thermal conductivity between 2D h-BAs and h-GaN, because both of them have a similar mass density. The thermal conductivity of h-BAs is one order of magnitude higher than that of h-GaN (16 W m−1 K−1), which is governed by the different phonon scattering process attributed to the opposite wavevector dependence in out-of-plane optical phonons. Our findings provide new insight into the physics of heat conduction in 2D materials, and demonstrate h-BAs to be a new thermally conductive 2D semiconductor. The cubic boron arsenide (BAs) crystal has received extensive research attention because of its ultra-high thermal conductivity comparable to that of diamond.![]()
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Affiliation(s)
- Yanxiao Hu
- School of Science
- Chongqing University of Posts and Telecommunications
- Chongqing
- China
| | - Dengfeng Li
- School of Science
- Chongqing University of Posts and Telecommunications
- Chongqing
- China
- Department of Physics
| | - Yan Yin
- School of Science
- Chongqing University of Posts and Telecommunications
- Chongqing
- China
| | - Shichang Li
- School of Science
- Chongqing University of Posts and Telecommunications
- Chongqing
- China
| | - Hangbo Zhou
- Institute of High Performance Computing
- A*STAR
- Singapore
| | - Gang Zhang
- Institute of High Performance Computing
- A*STAR
- Singapore
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28
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Chowdhury EH, Rahman MH, Bose P, Jayan R, Islam MM. Atomic-scale analysis of the physical strength and phonon transport mechanisms of monolayer β-bismuthene. Phys Chem Chem Phys 2020; 22:28238-28255. [PMID: 33295342 DOI: 10.1039/d0cp04785f] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
Bismuthene has opened up a new avenue in the field of nanotechnology because of its spectacular electronic and thermoelectric features. The strong spin-orbit-coupling enables its operation as the largest nontrivial bandgap topological insulator and quantum spin hall material at room temperature, which is unlikely for any other 2D material. It is also known to be the most promising thermoelectric material due to its remarkable thermoelectric properties, including a substantially high power factor. However, an in-depth understanding of the mechanical and thermal transport properties of bismuthene is crucial for its practical implementation and efficient operation. Employing the Stillinger-Weber potential, we utilized molecular dynamics simulations to inspect the mechanical strength and thermal conductivity of the monolayer β-bismuthene for the first time. We analyzed the effect of temperature on the tensile mechanical properties along the armchair and zigzag directions of bismuthene nanosheets and found that increasing temperature causes a significant deterioration in these properties. The material shows superior fracture resistance with zigzag loading, whereas the armchair direction exhibits an improved elasticity. Next, we showed that increasing vacancy concentration and crack length notably reduce the fracture stress and strain of β-bismuthene. Under all these conditions, β-bismuthene showed a strong chirality effect under tensile loading. We also explored the fracture phenomena of a pre-cracked β-bismuthene, which reveal that the armchair-directed crack possesses a higher fracture resistance than the zigzag-directed crack. Interestingly, branching phenomena occurred during crack propagation for the armchair crack; meanwhile, the crack propagates perpendicular to loading for the zigzag crack. Afterward, we investigated the effect of loading rate on the fracture properties of bismuthene along the armchair and zigzag directions. Finally, we calculated the thermal conductivity of bismuthene under the influence of temperature and vacancy and recorded a substantial decrement in thermal conductivity with increasing temperature and vacancy. The obtained results are comprehensively discussed in the light of phonon density of states, phonon dispersion spectrum, and phonon group velocities. It is also disclosed that the thermal conductivity of β-bismuthene is considerably lower than that of other analogous honeycomb structures. This study can add a new dimension to the successful realization of bismuthene in future (opto)electronic, spintronic, and thermoelectric devices.
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Affiliation(s)
- Emdadul Haque Chowdhury
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh
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29
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Zhu XL, Liu PF, Zhang J, Zhang P, Zhou WX, Xie G, Wang BT. Monolayer SnP 3: an excellent p-type thermoelectric material. NANOSCALE 2019; 11:19923-19932. [PMID: 31599910 DOI: 10.1039/c9nr04726c] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Monolayer SnP3 is a novel two-dimensional (2D) semiconductor material with high carrier mobility and large optical absorption coefficient, implying its potential applications in the photovoltaic and thermoelectric (TE) fields. Herein, we report on the TE properties of monolayer SnP3 utilizing first principles density functional theory (DFT) together with semiclassical Boltzmann transport theory. Results indicate that it exhibits a low lattice thermal conductivity of ∼4.97 W m-1 K-1 at room temperature, mainly originating from its small average acoustic group velocity (∼1.18 km s-1), large Grüneisen parameters (∼7.09), strong dipole-dipole interactions, and strong phonon-phonon scattering. A large in-plane charge transfer is observed, which results in a non-ignorable bipolar effect on the lattice thermal conductivity. The exhibited mixed mode between in-plane and out-of-plane vibrations enhances the complexity of the phonon phase space, which enhances the possibility of phonon scattering processes and results in suppression of thermal conductivity. A highly twofold degeneracy appearing at the K point gives a high Seebeck coefficient. Our calculated figure of merit (ZT) for optimal p-type doping at 500 K can approach 3.46 along the armchair direction, which is better than the theoretical value of 1.94 reported in the well-known TE material SnSe. Our studies here shed light on monolayer SnP3 in use as a TE material and supply insights to further optimize the TE properties in similar systems.
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Affiliation(s)
- Xue-Liang Zhu
- School of Materials Science and Engineering, Hunan University of Science and Technology, 411201 Xiangtan, China. and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, P. R. China and Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China.
| | - Peng-Fei Liu
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China. and Dongguan Neutron Science Center, Dongguan 523803, China
| | - Junrong Zhang
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China. and Dongguan Neutron Science Center, Dongguan 523803, China
| | - Ping Zhang
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
| | - Wu-Xing Zhou
- School of Materials Science and Engineering, Hunan University of Science and Technology, 411201 Xiangtan, China. and Hunan Provincial Key Lab of Advanced Materials for New Energy Storage and Conversion, 411201 Xiangtan, China
| | - Guofeng Xie
- School of Materials Science and Engineering, Hunan University of Science and Technology, 411201 Xiangtan, China. and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, P. R. China and Hunan Provincial Key Lab of Advanced Materials for New Energy Storage and Conversion, 411201 Xiangtan, China
| | - Bao-Tian Wang
- Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China. and Dongguan Neutron Science Center, Dongguan 523803, China
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30
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Islam ASMJ, Islam MS, Ferdous N, Park J, Bhuiyan AG, Hashimoto A. Anomalous temperature dependent thermal conductivity of two-dimensional silicon carbide. NANOTECHNOLOGY 2019; 30:445707. [PMID: 31357179 DOI: 10.1088/1361-6528/ab3697] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recently, two-dimensional silicon carbide (2D-SiC) has attracted considerable interest due to its exotic electronic and optical properties. Here, we explore the thermal properties of 2D-SiC using reverse non-equilibrium molecular dynamics simulation. At room temperature, a thermal conductivity of ∼313 W mK-1 is obtained for 2D-SiC which is one order higher than that of silicene. Above room temperature, the thermal conductivity deviates the normal 1/T law and shows an anomalous slowly decreasing behavior. To elucidate the variation of thermal conductivity, the phonon modes at different length and temperature are quantified using Fourier transform of the velocity auto-correlation of atoms. The calculated phonon density of states at high temperature shows a shrinking and softening of the peaks, which induces the anomaly in the thermal conductivity. On the other hand, quantum corrections are applied to avoid the freezing effects of phonon modes on the thermal conductivity at low temperature. In addition, the effect of potential on the thermal conductivity calculation is also studied by employing original and optimized Tersoff potentials. These findings provide a means for better understating as well as designing the efficient thermal management of 2D-SiC based electronics and optoelectronics in near future.
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Affiliation(s)
- A S M Jannatul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh
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31
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Wang C, Lian B, Guo X, Mao J, Zhang Z, Zhang D, Gu BL, Xu Y, Duan W. Type-II Ising Superconductivity in Two-Dimensional Materials with Spin-Orbit Coupling. PHYSICAL REVIEW LETTERS 2019; 123:126402. [PMID: 31633945 DOI: 10.1103/physrevlett.123.126402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2019] [Revised: 07/16/2019] [Indexed: 06/10/2023]
Abstract
Centrosymmetric materials with spin-degenerate bands are generally considered to be trivial for spintronics and related physics. In two-dimensional (2D) materials with multiple degenerate orbitals, we find that the spin-orbit coupling can induce spin-orbital locking, generate out-of-plane Zeeman-like fields displaying opposite signs for opposing orbitals, and create novel electronic states insensitive to the in-plane magnetic field, which thus enables a new type of Ising superconductivity applicable to centrosymmetric materials. Many candidate materials are identified by high-throughput first-principles calculations. Our work enriches the physics and materials of Ising superconductivity, opening new opportunities for future research of 2D materials.
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Affiliation(s)
- Chong Wang
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Biao Lian
- Princeton Center for Theoretical Science, Princeton University, Princeton 08544, New Jersey, USA
| | - Xiaomi Guo
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
| | - Jiahao Mao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
| | - Zetao Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
| | - Ding Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Bing-Lin Gu
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Wenhui Duan
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
- Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, China
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32
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Roychowdhury S, Samanta M, Banik A, Biswas K. Thermoelectric energy conversion and topological materials based on heavy metal chalcogenides. J SOLID STATE CHEM 2019. [DOI: 10.1016/j.jssc.2019.04.005] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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33
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Niu T, Zhou W, Zhou D, Hu X, Zhang S, Zhang K, Zhou M, Fuchs H, Zeng H. Modulating Epitaxial Atomic Structure of Antimonene through Interface Design. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902606. [PMID: 31157463 DOI: 10.1002/adma.201902606] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2019] [Indexed: 06/09/2023]
Abstract
Antimonene, a new semiconductor with fundamental bandgap and desirable stability, has been experimentally realized recently. However, epitaxial growth of wafer-scale single-crystalline monolayer antimonene preserving its buckled configuration remains a daunting challenge. Here, Cu(111) and Cu(110) are chosen as the substrates to fabricate high-quality, single-crystalline antimonene via molecular beam epitaxy (MBE). Surface alloys form spontaneously after the deposition and postannealing of Sb on two substrates that show threefold and twofold symmetry with different lattice constants. Increasing the coverage leads to the epitaxial growth of two atomic types of antimonene, both exhibiting a hexagonal lattice but with significant difference in lattice constants, which are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements reveal the strain-induced tunable bandgap, in agreement with the first-principles calculations. The results show that epitaxial growth of antimonene on different substrates allow the electronic properties of these films to be tuned by substrate-induced strain and stress.
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Affiliation(s)
- Tianchao Niu
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, Nanjing, 210094, China
| | - Wenhan Zhou
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Dechun Zhou
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, Nanjing, 210094, China
| | - Xuemin Hu
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Shengli Zhang
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Kan Zhang
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Miao Zhou
- School of Physics, Beihang University, Beijing, 100191, China
| | - Harald Fuchs
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, Nanjing, 210094, China
- Center for Nanotechnology (CeNTech), Westfälische Wilhelms-Universität Münster, Heisenbergstrasse 11, 48149, Münster, Germany
| | - Haibo Zeng
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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34
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Wu D, Du Q, Wu X, Shi R, Sai L, Liang X, Huang X, Zhao J. Evolution of atomic structures of SnN, SnN−, and SnNCl− clusters (N = 4–20): Insight from ab initio calculations. J Chem Phys 2019; 150:174304. [DOI: 10.1063/1.5095437] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022] Open
Affiliation(s)
- Di Wu
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
- School of Science, Shenyang Aerospace University, Shenyang 110136, China
| | - Qiuying Du
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Xue Wu
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Ruili Shi
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Linwei Sai
- Department of Mathematics and Physics, Hohai University, Changzhou 213022, China
| | - Xiaoqing Liang
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Xiaoming Huang
- School of Ocean Science and Technology, Dalian University of Technology, Panjin 124221, China
| | - Jijun Zhao
- Key Laboratory of Materials Modification By Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
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35
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Low Lattice Thermal Conductivity of a Two-Dimensional Phosphorene Oxide. Sci Rep 2019; 9:5149. [PMID: 30914726 PMCID: PMC6435745 DOI: 10.1038/s41598-019-41696-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2018] [Accepted: 03/14/2019] [Indexed: 11/29/2022] Open
Abstract
A fundamental understanding of the phonon transport mechanism is important for optimizing the efficiency of thermoelectric devices. In this study, we investigate the thermal transport properties of the oxidized form of phosphorene called phosphorene oxide (PO) by solving phonon Boltzmann transport equation based on first-principles density functional theory. We reveal that PO exhibits a much lower thermal conductivity (2.42–7.08 W/mK at 300 K) than its pristine counterpart as well as other two-dimensional materials. To comprehend the physical origin of such low thermal conductivity, we scrutinize the contribution of each phonon branch to the thermal conductivity by evaluating various mode-dependent quantities including Grüneisen parameters, anharmonic three-phonon scattering rate, and phase space of three-phonon scattering processes. Our results show that its flexible puckered structure of PO leads to smaller sound velocities; its broken-mirror symmetry allows more ZA phonon scattering; and the relatively-free vibration of dangling oxygen atoms in PO gives rise to additional scattering resulting in further reduction in the phonon lifetime. These results can be verified by the fact that PO has larger phase space for three-phonon processes than phosphorene. Furthermore we show that the thermal conductivity of PO can be optimized by controlling its size or its phonon mean free path, indicating that PO can be a promising candidate for low-dimensional thermoelectric devices.
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36
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Rashid Z, Nissimagoudar AS, Li W. Phonon transport and thermoelectric properties of semiconducting Bi2Te2X (X = S, Se, Te) monolayers. Phys Chem Chem Phys 2019; 21:5679-5688. [DOI: 10.1039/c8cp05793a] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Confinement or dimensionality reduction is a novel strategy to reduce the lattice thermal conductivity and, consequently, to improve the thermoelectric conversion performance.
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Affiliation(s)
- Zahid Rashid
- Institute for Advanced Study
- Shenzhen University
- Shenzhen 518060
- China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province
| | - Arun S. Nissimagoudar
- Institute for Advanced Study
- Shenzhen University
- Shenzhen 518060
- China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province
| | - Wu Li
- Institute for Advanced Study
- Shenzhen University
- Shenzhen 518060
- China
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37
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Bhattacharya A, Raghuvansi PR, Das GP. The origin of diverse lattice dynamics in the graphene family. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:355003. [PMID: 30033937 DOI: 10.1088/1361-648x/aad517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We employ first principles based density functional theory calculations to explore the lattice dynamics of members of the graphene family. We explore the changes observed in the lattice thermal conductivity via adopting physical models for estimating phonon lifetimes. This allows us to establish a connection between the parameters such as group velocity, Grüneisen parameter, and Debye temperature of the acoustic phonon modes and the lattice thermal conductivity. Our calculations show that the presence of buckling reduces the group velocity and the Debye temperature of the sheets down the group, and hence, reduces their lattice thermal conductivity. However, there is no linear dependence between the buckling height and the observed lowering. An increase in buckling height in sheets with different geometries of the same atomic species, beyond a certain limit, does not lead to change in the group velocity and the Debye temperature of the sheets.
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Affiliation(s)
- Amrita Bhattacharya
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay, Powai-400076, Mumbai, Maharashtra, India
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38
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Sarikurt S, Çakır D, Keçeli M, Sevik C. The influence of surface functionalization on thermal transport and thermoelectric properties of MXene monolayers. NANOSCALE 2018; 10:8859-8868. [PMID: 29714796 DOI: 10.1039/c7nr09144c] [Citation(s) in RCA: 32] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
The newest members of a two-dimensional material family, involving transition metal carbides and nitrides (called MXenes), have garnered increasing attention due to their tunable electronic and thermal properties depending on the chemical composition and functionalization. This flexibility can be exploited to fabricate efficient electrochemical energy storage (batteries) and energy conversion (thermoelectric) devices. In this study, we calculated the Seebeck coefficients and lattice thermal conductivity values of oxygen terminated M2CO2 (where M = Ti, Zr, Hf, Sc) monolayer MXene crystals in two different functionalization configurations (model-II (MD-II) and model-III (MD-III)), using density functional theory and Boltzmann transport theory. We estimated the thermoelectric figure-of-merit, zT, of these materials by two different approaches, as well. First of all, we found that the structural model (i.e. adsorption site of oxygen atom on the surface of MXene) has a paramount impact on the electronic and thermoelectric properties of MXene crystals, which can be exploited to engineer the thermoelectric properties of these materials. The lattice thermal conductivity κl, Seebeck coefficient and zT values may vary by 40% depending on the structural model. The MD-III configuration always has the larger band gap, Seebeck coefficient and zT, and smaller κl as compared to the MD-II structure due to a larger band gap, highly flat valence band and reduced crystal symmetry in the former. The MD-III configuration of Ti2CO2 and Zr2CO2 has the lowest κl as compared to the same configuration of Hf2CO2 and Sc2CO2. Among all the considered structures, the MD-II configuration of Hf2CO2 has the highest κl, and Ti2CO2 and Zr2CO2 in the MD-III configuration have the lowest κl. For instance, while the band gap of the MD-II configuration of Ti2CO2 is 0.26 eV, it becomes 0.69 eV in MD-III. The zTmax value may reach up to 1.1 depending on the structural model of MXene.
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Affiliation(s)
- Sevil Sarikurt
- Department of Physics, Faculty of Science, Dokuz Eylul University, Izmir, 35390, Turkey.
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Noshin M, Khan AI, Subrina S. Thermal transport characterization of stanene/silicene heterobilayer and stanene bilayer nanostructures. NANOTECHNOLOGY 2018; 29:185706. [PMID: 29438099 DOI: 10.1088/1361-6528/aaaf17] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Recently, stanene and silicene based nanostructures with low thermal conductivity have incited noteworthy interest due to their prospect in thermoelectrics. Aiming at the possibility of extracting lower thermal conductivity, in this study, we have proposed and modeled stanene/silicene heterobilayer nanoribbons, a new heterostructure and subsequently characterized their thermal transport by using an equilibrium molecular dynamics simulation. In addition, the thermal transport in bilayer stanene is also studied and compared. We have computed the thermal conductivity of the stanene/silicene and bilayer stanene nanostructures to characterize their thermal transport phenomena. The studied nanostructures show good thermal stability within the temperature range of 100-600 K. The room temperature thermal conductivities of pristine 10 nm × 3 nm stanene/silicene hetero-bilayer and stanene bilayer are estimated to be 3.63 ± 0.27 W m-1 K-1 and 1.31 ± 0.34 W m-1 K-1, respectively, which are smaller than that of silicene, graphene and some other 2D monolayers as well as heterobilayers such as stanene/graphene and silicene/graphene. In the temperature range of 100-600 K, the thermal conductivity of our studied bilayer nanoribbons decreases with an increase in the temperature. Furthermore, we have investigated the dependence of our estimated thermal conductivity on the size of the considered nanoribbons. The thermal conductivities of both the nanoribbons are found to increase with an increase in the width of the structure. The thermal conductivity shows a similar increasing trend with the increase in the ribbon length, as well. Our results suggest that, the low thermal conductivity of our studied bilayer structures can be further decreased by nanostructuring. The significantly low thermal conductivity of the stanene/silicene heterobilayer and stanene bilayer nanoribbons realized in our study would provide a good insight and encouragement into their appealing prospect in the thermoelectric applications.
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Affiliation(s)
- Maliha Noshin
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh
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Abbasi A, Sardroodi JJ. Density functional theory investigation of the interactions between the buckled stanene nanosheet and XO2 gases (X = N, S, C). COMPUT THEOR CHEM 2018. [DOI: 10.1016/j.comptc.2017.12.010] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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Garg P, Choudhuri I, Mahata A, Pathak B. Band gap opening in stanene induced by patterned B-N doping. Phys Chem Chem Phys 2018; 19:3660-3669. [PMID: 28094366 DOI: 10.1039/c6cp07505c] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Stanene is a quantum spin Hall insulator and a promising material for electronic and optoelectronic devices. Density functional theory (DFT) calculations are performed to study the band gap opening in stanene by elemental mono-doping (B, N) and co-doping (B-N). Different patterned B-N co-doping is studied to change the electronic properties of stanene. A patterned B-N co-doping opens the band gap in stanene and its semiconducting nature persists under strain. Molecular dynamics (MD) simulations are performed to confirm the thermal stability of such a doped system. The stress-strain study indicates that such a doped system is as stable as pure stanene. Our work function calculations show that stanene and doped stanene have a lower work function than graphene and thus are promising materials for photocatalysts and electronic devices.
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Affiliation(s)
- Priyanka Garg
- Discipline of Chemistry, Indian Institute of Technology (IIT) Indore, Indore, M.P. 453552, India.
| | - Indrani Choudhuri
- Discipline of Chemistry, Indian Institute of Technology (IIT) Indore, Indore, M.P. 453552, India.
| | - Arup Mahata
- Discipline of Chemistry, Indian Institute of Technology (IIT) Indore, Indore, M.P. 453552, India.
| | - Biswarup Pathak
- Discipline of Chemistry, Indian Institute of Technology (IIT) Indore, Indore, M.P. 453552, India. and Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology (IIT) Indore, Indore, M.P. 453552, India
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Liu G, Wang H, Gao Y, Zhou J, Wang H. Anisotropic intrinsic lattice thermal conductivity of borophane from first-principles calculations. Phys Chem Chem Phys 2018; 19:2843-2849. [PMID: 28067931 DOI: 10.1039/c6cp07367k] [Citation(s) in RCA: 33] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Borophene (boron sheet) as a new type of two-dimensional (2D) material was grown successfully recently. Unfortunately, the structural stability of freestanding borophene is still an open issue. Theoretical research has found that full hydrogenation can remove such instability, and the product is called borophane. In this paper, using first-principles calculations we investigate the lattice dynamics and thermal transport properties of borophane. The intrinsic lattice thermal conductivity and the relaxation time of borophane are investigated by solving the phonon Boltzmann transport equation (BTE) based on first-principles calculations. We find that the intrinsic lattice thermal conductivity of borophane is anisotropic, as the higher value (along the zigzag direction) is about two times of the lower one (along the armchair direction). The contributions of phonon branches to the lattice thermal conductivities along different directions are evaluated. It is found that both the anisotropy of thermal conductivity and the different phonon branches which dominate the thermal transport along different directions are decided by the group velocity and the relaxation time of phonons with very low frequency. In addition, the size dependence of thermal conductivity is investigated using cumulative thermal conductivity. The underlying physical mechanisms of these unique properties are also discussed in this paper.
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Affiliation(s)
- Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China.
| | - Haifeng Wang
- Department of Physics, College of Science, Shihezi University, Xinjiang 832003, China
| | - Yan Gao
- Department of Physics, College of Science, Shihezi University, Xinjiang 832003, China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Hui Wang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China.
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Wang S, Wang W, Zhao G. Thermal transport properties of antimonene: an ab initio study. Phys Chem Chem Phys 2018; 18:31217-31222. [PMID: 27819098 DOI: 10.1039/c6cp06088a] [Citation(s) in RCA: 54] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Searching for low thermal conductivity materials is crucial for thermoelectric devices. Here we report on the phonon transport properties of recently fabricated single layer antimony, antimonene [Ares, et al., Adv. Mater., 2016, 28, 6332]. Ab initio calculations in combination with the Boltzmann transport equation (BTE) for phonons show that antimonene has a low lattice thermal conductivity (15.1 W m-1 K-1 at 300 K), indicating its potential thermoelectric applications. The low lattice thermal conductivity is due to its small group velocity, low Debye temperature and large buckling height. We also investigate in detail the mode contributions to total thermal conductivity and find at low frequency that the longitudinal acoustic (LA) branch dominates the thermal conductivity. Moreover, we show that the lattice thermal conductivity of antimonene can further be reduced by minimizing the sample size. Our findings open the field for thermoelectric applications based on antimonene.
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Affiliation(s)
- Shudong Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.
| | - Wenhua Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.
| | - Guojun Zhao
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.
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González-Romero RL, Antonelli A, Chaves AS, Meléndez JJ. Ultralow and anisotropic thermal conductivity in semiconductor As 2Se 3. Phys Chem Chem Phys 2018; 20:1809-1816. [PMID: 29292419 DOI: 10.1039/c7cp07242b] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
An ultralow lattice thermal conductivity of 0.14 W m-1 K-1 along the b[combining right harpoon above] axis of As2Se3 single crystals was obtained at 300 K using first-principles calculations involving density functional theory and the resolution of the Boltzmann transport equation. This ultralow lattice thermal conductivity arises from the combination of two mechanisms: (1) a cascade-like fall of the low-lying optical modes, which results in avoided crossings of these with the acoustic modes, low sound velocities and increased scattering rates of the acoustic phonons; and (2) the repulsion between the lone-pair electrons of the As cations and the valence p orbitals of the Se anions, which leads to an increase in the anharmonicity of the bonds. The physical origins of these mechanisms lie in the nature of the chemical bonding in the material and its strong anisotropy. These results, whose validity has been addressed by comparison with SnSe, for which excellent agreement between the theoretical predictions and the experiments is achieved, point out that As2Se3 could exhibit improved thermoelectric properties.
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Mahata A, Mukhopadhyay T. Probing the chirality-dependent elastic properties and crack propagation behavior of single and bilayer stanene. Phys Chem Chem Phys 2018; 20:22768-22782. [DOI: 10.1039/c8cp03892a] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Mechanical properties of stanene, a promising quasi-two-dimensional honeycomb-like nanostructure of tin belonging to the family of 2D-Xenes (X = Si, Ge, Sn), have been investigated in this paper.
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Affiliation(s)
- Avik Mahata
- Department of Materials Science and Engineering
- Missouri University of Science and Technology
- USA
- Department of Aerospace Engineering
- Indian Institute of Science
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Sun H, Li Q, Wan XG. First-principles study of thermal properties of borophene. Phys Chem Chem Phys 2017; 18:14927-32. [PMID: 27188523 DOI: 10.1039/c6cp02029a] [Citation(s) in RCA: 91] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Very recently, a new single-element two-dimensional (2D) material borophene was successfully grown on a silver surface under pristine ultrahigh vacuum conditions which attracts tremendous interest. In this paper, the lattice thermal conductivity, phonon lifetimes, thermal expansion and temperature dependent elastic moduli of borophene are systematically studied by using first-principles. Our simulations show that borophene possesses unique thermal properties. Strong phonon-phonon scattering is found in borophene, which results in its unexpectedly low lattice thermal conductivity. Thermal expansion coefficients along both the armchair and zigzag directions of borophene show impressive negative values. More strikingly, the elastic moduli are sizably strengthened as temperature increases, and the negative in-plane Poisson's ratios are found along both the armchair and zigzag directions at around 120 K. The mechanisms of these unique thermal properties are also discussed in this paper.
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Affiliation(s)
- Hongyi Sun
- National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing, 210093, China
| | - Qingfang Li
- Department of Physics, Nanjing University of Information Science & Technology, Nanjing 210044, China.
| | - X G Wan
- National Laboratory of Solid State Microstructures, College of Physics, Nanjing University, Nanjing, 210093, China
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Shafique A, Shin YH. Thermoelectric and phonon transport properties of two-dimensional IV-VI compounds. Sci Rep 2017; 7:506. [PMID: 28360412 PMCID: PMC5428725 DOI: 10.1038/s41598-017-00598-7] [Citation(s) in RCA: 72] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2016] [Accepted: 03/07/2017] [Indexed: 11/10/2022] Open
Abstract
We explore the thermoelectric and phonon transport properties of two-dimensional monochalcogenides (SnSe, SnS, GeSe, and GeS) using density functional theory combined with Boltzmann transport theory. We studied the electronic structures, Seebeck coefficients, electrical conductivities, lattice thermal conductivities, and figures of merit of these two-dimensional materials, which showed that the thermoelectric performance of monolayer of these compounds is improved in comparison compared to their bulk phases. High figures of merit (ZT) are predicted for SnSe (ZT = 2.63, 2.46), SnS (ZT = 1.75, 1.88), GeSe (ZT = 1.99, 1.73), and GeS (ZT = 1.85, 1.29) at 700 K along armchair and zigzag directions, respectively. Phonon dispersion calculations confirm the dynamical stability of these compounds. The calculated lattice thermal conductivities are low while the electrical conductivities and Seebeck coefficients are high. Thus, the properties of the monolayers show high potential toward thermoelectric applications.
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Affiliation(s)
- Aamir Shafique
- Department of Physics, University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Young-Han Shin
- Department of Physics, University of Ulsan, Ulsan, 44610, Republic of Korea.
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Garg P, Choudhuri I, Pathak B. Stanene based gas sensors: effect of spin–orbit coupling. Phys Chem Chem Phys 2017; 19:31325-31334. [DOI: 10.1039/c7cp06133a] [Citation(s) in RCA: 43] [Impact Index Per Article: 6.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
B@, N@, and B–N@stanene for NO2 gas sensors.
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Affiliation(s)
- Priyanka Garg
- Discipline of Chemistry
- Indian Institute of Technology (IIT) Indore
- Indore
- India
| | - Indrani Choudhuri
- Discipline of Chemistry
- Indian Institute of Technology (IIT) Indore
- Indore
- India
| | - Biswarup Pathak
- Discipline of Chemistry
- Indian Institute of Technology (IIT) Indore
- Indore
- India
- Discipline of Metallurgy Engineering and Materials Science
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Khan AI, Paul R, Subrina S. Characterization of thermal and mechanical properties of stanene nanoribbons: a molecular dynamics study. RSC Adv 2017. [DOI: 10.1039/c7ra09209a] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Thermal and mechanical properties of stanene nanoribbons have been characterized to aid the design of stanene based thermoelectrics and nanoelectronic devices.
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Affiliation(s)
- Asir Intisar Khan
- Department of Electrical and Electronic Engineering
- Bangladesh University of Engineering and Technology
- Dhaka 1205
- Bangladesh
| | - Ratul Paul
- Department of Mechanical Engineering
- Bangladesh University of Engineering and Technology
- Dhaka 1000
- Bangladesh
| | - Samia Subrina
- Department of Electrical and Electronic Engineering
- Bangladesh University of Engineering and Technology
- Dhaka 1205
- Bangladesh
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50
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Wang H, Qin G, Li G, Wang Q, Hu M. Low thermal conductivity of monolayer ZnO and its anomalous temperature dependence. Phys Chem Chem Phys 2017; 19:12882-12889. [DOI: 10.1039/c7cp00460e] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The temperature dependent thermal conductivity of monolayer Zinc Oxide (ZnO) is found largely deviating from the traditional 1/T law.
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Affiliation(s)
- Huimin Wang
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education)
- Northeastern University
- 110819 Shenyang
- China
- Institute of Mineral Engineering
| | - Guangzhao Qin
- Institute of Mineral Engineering
- Division of Material Science and Engineering
- Faculty of Georesources and Materials Engineering
- RWTH Aachen University
- 52064 Aachen
| | - Guojian Li
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education)
- Northeastern University
- 110819 Shenyang
- China
| | - Qiang Wang
- Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education)
- Northeastern University
- 110819 Shenyang
- China
| | - Ming Hu
- Institute of Mineral Engineering
- Division of Material Science and Engineering
- Faculty of Georesources and Materials Engineering
- RWTH Aachen University
- 52064 Aachen
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