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Bandyopadhyay AS, Puthirath AB, Ajayan PM, Zhu H, Lin Y, Kaul AB. Intrinsic and Strain-Dependent Properties of Suspended WSe 2 Crystallites toward Next-Generation Nanoelectronics and Quantum-Enabled Sensors. ACS Appl Mater Interfaces 2024; 16:3640-3653. [PMID: 38268147 DOI: 10.1021/acsami.3c13603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Two-dimensional (2D) layered materials exhibit great potential for high-performance electronics, where knowledge of their thermal and phononic properties is critical toward understanding heat dissipation mechanisms, considered to be a major bottleneck for current generation nanoelectronic, optoelectronic, and quantum-scale devices. In this work, noncontact Raman spectroscopy was used to analyze thermal properties of suspended 2D WSe2 membranes to access the intrinsic properties. Here, the influence of electron-phonon interactions within the parent crystalline WSe2 membranes was deciphered through a comparative analysis of extrinsic substrate-supported WSe2, where heat dissipation mechanisms are intimately tied to the underlying substrate. Moreover, the excitonic states in WSe2 were analyzed by using temperature-dependent photoluminescence spectroscopy, where an enhancement in intensity of the localized excitons in suspended WSe2 was evident. Finally, phononic and electronic properties in suspended WSe2 were examined through nanoscale local strain engineering, where a uniaxial force was induced on the membrane using a Au-coated cantilever within an atomic force microscope. Through the fundamental analysis provided here with temperature and strain-dependent phononic and optoelectronic properties in suspended WSe2 nanosheets, the findings will inform the design of next-generation energy-efficient, high-performance devices based on WSe2 and other 2D materials, including for quantum applications.
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Affiliation(s)
- Avra S Bandyopadhyay
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76207, United States
| | - Anand B Puthirath
- Materials Science and Nano Engineering Department, Rice University, Houston, Texas 77005, United States
| | - Pulickel M Ajayan
- Materials Science and Nano Engineering Department, Rice University, Houston, Texas 77005, United States
| | - Hanyu Zhu
- Materials Science and Nano Engineering Department, Rice University, Houston, Texas 77005, United States
| | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, Texas 76201, United States
| | - Anupama B Kaul
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76207, United States
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76207, United States
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Jin M, Khafizov M, Jiang C, Zhou S, Marianetti CA, Bryan MS, Manley ME, Hurley DH. Assessment of empirical interatomic potential to predict thermal conductivity in ThO 2and UO 2. J Phys Condens Matter 2021; 33:275402. [PMID: 33455948 DOI: 10.1088/1361-648x/abdc8f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2020] [Accepted: 01/15/2021] [Indexed: 06/12/2023]
Abstract
Computing vibrational properties of crystals in the presence of complex defects often necessitates the use of (semi-)empirical potentials, which are typically not well characterized for perfect crystals. Here we explore the efficacy of a commonly used embedded-atomempirical interatomic potential for the UxTh1-xO2system, to compute phonon dispersion, lifetime, and branch specific thermal conductivity. Our approach for ThO2involves using lattice dynamics and the linearized Boltzmann transport equation to calculate phonon transport properties based on second and third order force constants derived from the empirical potential and from first-principles calculations. For UO2, to circumvent the accuracy issues associated with first-principles treatments of strong electronic correlations, we compare results derived from the empirical interatomic potential to previous experimental results. It is found that the empirical potential can reasonably capture the dispersion of acoustic branches, but exhibits significant discrepancies for the optical branches, leading to overestimation of phonon lifetime and thermal conductivity. The branch specific conductivity also differs significantly with either first-principles based results (ThO2) or experimental measurements (UO2). These findings suggest that the empirical potential needs to be further optimized for robust prediction of thermal conductivity both in perfect crystals and in the presence of complex defects.
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Affiliation(s)
- Miaomiao Jin
- Department of Nuclear Engineering, The Pennsylvania State University, 205 Hallowell Bldg, University Park, PA 16802, United States of America
| | - Marat Khafizov
- Department of Mechanical and Aerospace Engineering, The Ohio State University, 201 W 19th Ave, Columbus, OH 43210, United States of America
| | - Chao Jiang
- Idaho National Laboratory, 2525 Fremont Ave, Idaho Falls, ID 83402, United States of America
| | - Shuxiang Zhou
- Idaho National Laboratory, 2525 Fremont Ave, Idaho Falls, ID 83402, United States of America
| | - Chris A Marianetti
- Department of Applies Physics and Applied Mathematics, Columbia University, New York, NY 10027, United States of America
| | - Matthew S Bryan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Michael E Manley
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - David H Hurley
- Idaho National Laboratory, 2525 Fremont Ave, Idaho Falls, ID 83402, United States of America
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Durante O, Di Giorgio C, Granata V, Neilson J, Fittipaldi R, Vecchione A, Carapella G, Chiadini F, DeSalvo R, Dinelli F, Fiumara V, Pierro V, Pinto IM, Principe M, Bobba F. Emergence and Evolution of Crystallization in TiO 2 Thin Films: A Structural and Morphological Study. Nanomaterials (Basel) 2021; 11:1409. [PMID: 34073645 DOI: 10.3390/nano11061409] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Revised: 05/16/2021] [Accepted: 05/19/2021] [Indexed: 12/03/2022]
Abstract
Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.
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Zhou Y, Liang AK, Zeng ZY, Chen XR, Geng HY. Anisotropic lattice thermal conductivity in topological semimetal ZrGe X( X=S, Se, Te): a first-principles study. J Phys Condens Matter 2021; 33:135401. [PMID: 33401256 DOI: 10.1088/1361-648x/abd8b9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2020] [Accepted: 01/05/2021] [Indexed: 06/12/2023]
Abstract
Topological semimetals have attracted significant attentions owing to their potential applications in numerous fields such as low-power electron devices and quantum computation, which are closely related to their thermal transport properties. In this work, the phonon transport properties of topological Dirac nodal-line semimetals ZrGeX(X= S, Se, Te) with the PbClF-type structures are systematically studied using the first-principles calculations combined with the Boltzmann transport theory. The obtained lattice thermal conductivities show an obvious anisotropy, which is caused by the layer structures of ZrGeX(X= S, Se, Te). The room-temperature lattice conductivity of ZrGeTe alongcdirection is found to be as low as 0.24 W m-1 K-1, indicating that it could be of great significance in the fields of thermal coating materials and solar cell absorber. In addition, we extract each phonon branch from group velocities, phonon scattering rates, Grüneisen parameters, and phase space volumes to investigate the mechanism underlying the low thermal conductivity. It is concluded that the difference of thermal conductivities of three materials may be caused by the number of scattering channels and the effect of anharmonic. Furthermore, the phonon mean free path alongadirection is relatively longer. Nanostructures or polycrystalline structures may be effective to reduce the thermal conductivity and improve the thermoelectric properties.
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Affiliation(s)
- Yu Zhou
- College of Physics, Sichuan University, Chengdu 610064, People's Republic of China
| | - A-Kun Liang
- Departamento de Física Aplicada-ICMUV-MALTA Consolider Team, Universitat de València, Burjassot (Valencia) 46100, Spain
| | - Zhao-Yi Zeng
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, People's Republic of China
| | - Xiang-Rong Chen
- College of Physics, Sichuan University, Chengdu 610064, People's Republic of China
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, People's Republic of China
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Bandyopadhyay AS, Biswas C, Kaul AB. Light-matter interactions in two-dimensional layered WSe 2 for gauging evolution of phonon dynamics. Beilstein J Nanotechnol 2020; 11:782-797. [PMID: 32509492 PMCID: PMC7237805 DOI: 10.3762/bjnano.11.63] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2019] [Accepted: 04/23/2020] [Indexed: 06/11/2023]
Abstract
Phonon dynamics is explored in mechanically exfoliated two-dimensional WSe2 using temperature-dependent and laser-power-dependent Raman and photoluminescence (PL) spectroscopy. From this analysis, phonon lifetime in the Raman active modes and phonon concentration, as correlated to the energy parameter E 0, were calculated as a function of the laser power, P, and substrate temperature, T. For monolayer WSe2, from the power dependence it was determined that the phonon lifetime for the in-plane vibrational mode was twice that of the out-of-plane vibrational mode for P in the range from 0.308 mW up to 3.35 mW. On the other hand, the corresponding relationship for the temperature analysis showed that the phonon lifetime for the in-plane vibrational mode lies within 1.42× to 1.90× that of the out-of-plane vibrational mode over T = 79 K up to 523 K. To provide energy from external stimuli, as T and P were increased, peak broadening in the PL spectra of the A-exciton was observed. From this, a phonon concentration was tabulated using the Urbach formulism, which increased with increasing T and P; consequently, the phonon lifetime was found to decrease. Although phonon lifetime decreased with increasing temperature for all thicknesses, the decay rate in the phonon lifetime in the monolayer (1L) material was found to be 2× lower compared to the bulk. We invoke a harmonic oscillator model to explain the damping mechanism in WSe2. From this it was determined that the damping coefficient increases with the number of layers. The work reported here sheds fundamental insights into the evolution of phonon dynamics in WSe2 and should help pave the way for designing high-performance electronic, optoelectronic and thermoelectric devices in the future.
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Affiliation(s)
- Avra S Bandyopadhyay
- Department of Electrical Engineering, University of North Texas, Denton, TX 76203, United States
- Department of Materials Science and Engineering; PACCAR Technology Institute; University of North Texas, Denton, TX 76203, United States
| | - Chandan Biswas
- Department of Electrical and Computer Engineering, University of Texas, El Paso, TX 79968, United States
| | - Anupama B Kaul
- Department of Electrical Engineering, University of North Texas, Denton, TX 76203, United States
- Department of Materials Science and Engineering; PACCAR Technology Institute; University of North Texas, Denton, TX 76203, United States
- Department of Electrical and Computer Engineering, University of Texas, El Paso, TX 79968, United States
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Abstract
We report a temperature-dependent Raman spectroscopy study of few-layer black phosphorus (BP) with varied incident polarization and sample thickness. The Raman-active modes Ag1, B2g, and Ag2 exhibit a frequency downshift, while their line width tends to increase with increasing temperature. To understand the details of these phenomena, we perform first-principles density functional theory calculations on freestanding monolayer BP. The effect of thermal expansion is included by constraining the temperature-dependent lattice constant. The study of the temperature-induced shift of the phonon frequencies is carried out using ab initio molecular dynamics simulations. The normal-mode frequencies are calculated by identifying the peak positions from the magnitude of the Fourier transform of the total velocity autocorrelation. Anharmonicity induces a frequency shift for each individual mode, and the three- and four-phonon process coefficients are extracted. These results are compared with those obtained from many-body perturbation theory, giving access to phonon lifetimes and lattice thermal conductivity. We establish that the frequency downshift is primarily due to phonon-phonon scattering while thermal expansion only contributes indirectly by renormalizing the phonon-phonon scattering. Overall, the theoretical results are in excellent agreement with experiment, thus showing that controlling phonon scattering in BP could result in better thermoelectric devices or transistors that dissipate heat more effectively when confined to the nanoscale.
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Affiliation(s)
- Damien Tristant
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Andrew Cupo
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Xi Ling
- Department of Chemistry, Division of Materials Science and Engineering, and The Photonics Center , Boston University , Boston , Massachusetts 02215 , United States
| | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
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