Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

Atomically Resolved Phase Coexistence in VO2 Thin Films

Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.

Magnetic Stress-Driven Metal-Insulator Transition in Strongly Correlated Antiferromagnetic CrN

Traditionally, the Coulomb repulsion or Peierls instability causes the metal-insulator phase transitions in strongly correlated quantum materials. In comparison, magnetic stress is predicted to drive the metal-insulator transition in materials exhibiting strong spin-lattice coupling. However, this mechanism lacks experimental validation and an in-depth understanding. Here we demonstrate the existence of the magnetic stress-driven metal-insulator transition in an archetypal material, chromium nitride. Structural, magnetic, electronic transport characterization, and first-principles modeling analysis show that the phase transition temperature in CrN is directly proportional to the strain-controlled anisotropic magnetic stress. The compressive strain increases the magnetic stress, leading to the much-coveted room-temperature transition. In contrast, tensile strain and the inclusion of nonmagnetic cations weaken the magnetic stress and reduce the transition temperature. This discovery of a new physical origin of metal-insulator phase transition that unifies spin, charge, and lattice degrees of freedom in correlated materials marks a new paradigm and could lead to novel device functionalities.

Controllable Phase Transition Properties in VO2 Films via Metal-Ion Intercalation

VO₂ has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature (T_c) tuning in VO₂ is desired. In this study, tailorable SMT characteristics in VO₂ films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li⁺ during the intercalation process, T_c of VO₂ can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective T_c tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO₂ introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO₂ phase transition toward room-temperature device applications and enables future real-time phase change property tuning.

Chemistry-mechanics-geometry coupling in positive electrode materials: a scale-bridging perspective for mitigating degradation in lithium-ion batteries through materials design

Despite their rapid emergence as the dominant paradigm for electrochemical energy storage, the full promise of lithium-ion batteries is yet to be fully realized, partly because of challenges in adequately resolving common degradation mechanisms. Positive electrodes of Li-ion batteries store ions in interstitial sites based on redox reactions throughout their interior volume. However, variations in the local concentration of inserted Li-ions and inhomogeneous intercalation-induced structural transformations beget substantial stress. Such stress can accumulate and ultimately engender substantial delamination and transgranular/intergranular fracture in typically brittle oxide materials upon continuous electrochemical cycling. This perspective highlights the coupling between electrochemistry, mechanics, and geometry spanning key electrochemical processes: surface reaction, solid-state diffusion, and phase nucleation/transformation in intercalating positive electrodes. In particular, we highlight recent findings on tunable material design parameters that can be used to modulate the kinetics and thermodynamics of intercalation phenomena, spanning the range from atomistic and crystallographic materials design principles (based on alloying, polymorphism, and pre-intercalation) to emergent mesoscale structuring of electrode architectures (through control of crystallite dimensions and geometry, curvature, and external strain). This framework enables intercalation chemistry design principles to be mapped to degradation phenomena based on consideration of mechanics coupling across decades of length scales. Scale-bridging characterization and modeling, along with materials design, holds promise for deciphering mechanistic understanding, modulating multiphysics couplings, and devising actionable strategies to substantially modify intercalation phase diagrams in a manner that unlocks greater useable capacity and enables alleviation of chemo-mechanical degradation mechanisms.

Fragile 3D Order in V_{1-x}Mo_{x}O_{2}

The metal-to-insulator transition in rutile VO_{2} has proven uniquely difficult to characterize because of the complex interplay between electron correlations and atomic structure. Here, we report the discovery of the sudden collapse of three-dimensional order in the low-temperature phase of V_{1-x}Mo_{x}O_{2} at x=0.17 and the emergence of a novel frustrated two-dimensional order at x=0.19, with only a slight change in electronic properties. Single crystal diffuse x-ray scattering reveals that this transition from the 3D M1 phase to a 2D variant of the M2 phase results in long-range structural correlations along symmetry-equivalent (11L) planes of the tetragonal rutile structure, yet extremely short-range correlations transverse to these planes. These findings suggest that this two dimensionality results from a novel form of geometric frustration that is essentially structural in origin.

Directly measuring the structural transition pathways of strain-engineered VO2 thin films

Epitaxial films of vanadium dioxide (VO₂) on rutile TiO₂ substrates provide a means of strain-engineering the transition pathways and stabilizing of the intermediate phases between monoclinic (insulating) M1 and rutile (metal) R end phases. In this work, we investigate structural behavior of epitaxial VO₂ thin films deposited on isostructural MgF₂ (001) and (110) substrates via temperature-dependent Raman microscopy analysis. The choice of MgF₂ substrate clearly reveals how elongation of V-V dimers accompanied by the shortening of V-O bonds triggers the intermediate M2 phase in the temperature range between 70-80 °C upon the heating-cooling cycles. Consistent with earlier claims of strain-induced electron correlation enhancement destabilizing the M2 phase our temperature-dependent Raman study supports a small temperature window for this phase. The similarity of the hysteretic behavior of structural and electronic transitions suggests that the structural transitions play key roles in the switching properties of epitaxial VO₂ thin films.

Tuning the hysteresis of a metal-insulator transition via lattice compatibility

Structural phase transitions serve as the basis for many functional applications including shape memory alloys (SMAs), switches based on metal-insulator transitions (MITs), etc. In such materials, lattice incompatibility between transformed and parent phases often results in a thermal hysteresis, which is intimately tied to degradation of reversibility of the transformation. The non-linear theory of martensite suggests that the hysteresis of a martensitic phase transformation is solely determined by the lattice constants, and the conditions proposed for geometrical compatibility have been successfully applied to minimizing the hysteresis in SMAs. Here, we apply the non-linear theory to a correlated oxide system (V_1−xW_xO₂), and show that the hysteresis of the MIT in the system can be directly tuned by adjusting the lattice constants of the phases. The results underscore the profound influence structural compatibility has on intrinsic electronic properties, and indicate that the theory provides a universal guidance for optimizing phase transforming materials.

The effect of the lattice degrees of freedom on the metal-insulator transition of VO₂ remains a topic of debate. Here the authors show that the lattice compatibility of the high temperature tetragonal phase and the low-temperature monoclinic phase strongly influences the electronic transition, as manifested in the tunability of its hysteresis via chemical substitution.

Ultrafast reprogrammable multifunctional vanadium-dioxide-assisted metasurface for dynamic THz wavefront engineering

In this paper, for the first time, a new generation of ultrafast reprogrammable multi-mission bias encoded metasurface is proposed for dynamic terahertz wavefront engineering by employing VO2 reversible and fast monoclinic to tetragonal phase transition. The multi-functionality of our designed VO2 based coding metasurface (VBCM) was guaranteed by elaborately designed meta-atom comprising three-patterned VO2 thin films whose operational statuses can be dynamically tuned among four states of "00"-"11" by merely changing the biasing voltage controlled by an external Field-programmable gate array platform. Capitalizing on such meta-atom design and by driving VBCM with different spiral-like and spiral-parabola-like coding sequences, single vortex beam and focused vortex beam with interchangeable orbital angular momentum modes were satisfactorily generated respectively. Additionally, by adopting superposition theorem and convolution operation, symmetric/asymmetric multiple beams and arbitrarily-oriented multiple vortex beams in pre-demined directions with different topological charges are realized. Several illustrative examples successfully have clarified that the proposed VBCM is a promising candidate for solving crucial terahertz challenges such as high data rate wireless communication where ultrafast switching between several missions is required.

Unconventional stable stoichiometry of vanadium peroxide

Peroxides have attracted considerable attention due to their intriguing electronic properties and diverse applications. However, only a few transition metal peroxides have been known thus far, limiting the variety of peroxide examples. Here, we demonstrate the stabilization of peroxides in the O-rich V-O system through first-principles calculations coupled with a swarm-intelligence structure search. As well as reproducing the known stoichiometries of VO, V₂O₃, VO₂, and V₂O₅, two hitherto unknown V₂O and VO₄ stoichiometries are predicted to be thermodynamically stable at megabar pressures. VO₄ has the highest oxygen content among the known peroxides to date. More interestingly, its electronic band gap increases with pressure, originating from the pressure-induced decrease of O-O bonding length in the peroxide group. V-rich V₂O exhibits superconductivity, becoming the first example in the V-O system. Our work not only unravels the unusual vanadium peroxide, but also provides further insight into the diverse electronic properties of vanadium oxides under high pressure.

Simultaneous Structural and Electronic Transitions in Epitaxial VO_{2}/TiO_{2}(001)

Recent reports have identified new metaphases of VO_{2} with strain and/or doping, suggesting the structural phase transition and the metal-to-insulator transition might be decoupled. Using epitaxially strained VO_{2}/TiO_{2} (001) thin films, which display a bulklike abrupt metal-to-insulator transition and rutile to monoclinic transition structural phase transition, we employ x-ray standing waves combined with hard x-ray photoelectron spectroscopy to simultaneously measure the structural and electronic transitions. This x-ray standing waves study elegantly demonstrates the structural and electronic transitions occur concurrently within experimental limits (±1  K).

Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2

Heterogeneous interfaces exhibit the unique phenomena by the redistribution of charged species to equilibrate the chemical potentials. Despite recent studies on the electronic charge accumulation across chemically inert interfaces, the systematic research to investigate massive reconfiguration of charged ions has been limited in heterostructures with chemically reacting interfaces so far. Here, we demonstrate that a chemical potential mismatch controls oxygen ionic transport across TiO₂/VO₂ interfaces, and that this directional transport unprecedentedly stabilizes high-quality rutile TiO₂ epitaxial films at the lowest temperature (≤ 150 °C) ever reported, at which rutile phase is difficult to be crystallized. Comprehensive characterizations reveal that this unconventional low-temperature epitaxy of rutile TiO₂ phase is achieved by lowering the activation barrier by increasing the “effective” oxygen pressure through a facile ionic pathway from VO_2-δ sacrificial templates. This discovery shows a robust control of defect-induced properties at oxide interfaces by the mismatch of thermodynamic driving force, and also suggests a strategy to overcome a kinetic barrier to phase stabilization at exceptionally low temperature.

The research to utilize chemical potential mismatch for materials synthesis has been limited across the oxide interface. Here, the authors show that directional ionic transport from the VO₂ layers stabilizes the rutile TiO₂ phase at extremely low temperatures, at which epitaxy is difficult, by effectively lowering the activation barrier for crystallization.

Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire

A detailed structural investigation of the semiconductor-to-metal transition (SMT) in vanadium dioxide thin films deposited on sapphire substrates by pulsed laser deposition was performed by in situ temperature-dependent X-ray diffraction (XRD) measurements. The structural results are correlated with those of infrared radiometry measurements in the SWIR (2.5-5 μm) and LWIR (8-10.6 μm) spectral ranges. The main results indicate a good agreement between XRD and optical analysis, therefore demonstrating that the structural transition from monoclinic to tetragonal phases is the dominating mechanism for controlling the global properties of the SMT transition. The picture that emerges is a SMT transition in which the two phases (monoclinic and tetragonal) coexist during the transition. Finally, the thermal hysteresis, measured for thin films with different thickness, showed a clear dependence of the transition temperature and the width of the hysteresis loop on the film thickness and on the size of the crystallites.

Switchable Piezoresistive SmS Thin Films on Large Area

Samarium monosulfide (SmS) is a switchable material, showing a pressure-induced semiconductor to metal transition. As such, it can be used in different applications such as piezoresistive sensors and memory devices. In this work, we present how e-beam sublimation of samarium metal in a reactive atmosphere can be used for the deposition of semiconducting SmS thin films on 150 mm diameter silicon wafers. The deposition parameters influencing the composition and properties of the thin films are evaluated, such as the deposition rate of Sm metal, the substrate temperature and the H₂S partial pressure. We then present the changes in the optical, structural and electrical properties of this compound after the pressure-induced switching to the metallic state. The back-switching and stability of SmS thin films are studied as a function of temperature and atmosphere via in-situ X-ray diffraction. The thermally induced back switching initiates at 250 °C, while above 500 °C, Sm₂O₂S is formed. Lastly, we explore the possibility to determine the valence state of the samarium ions by means of X-ray photoelectron spectroscopy.

Control of Au nanoantenna emission enhancement of magnetic dipolar emitters by means of VO2 phase change layers

Active, ultra-fast external control of the emission properties at the nanoscale is of great interest for chip-scale, tunable and efficient nanophotonics. Here we investigated the emission control of dipolar emitters coupled to a nanostructure made of an Au nanoantenna, and a thin vanadium dioxide (VO₂) layer that changes from semiconductor to metallic state. If the emitters are sandwiched between the nanoantenna and the VO₂ layer, the enhancement and/or suppression of the nanostructure's magnetic dipole resonance enabled by the phase change behavior of the VO₂ layer can provide a high contrast ratio of the emission efficiency. We show that a single nanoantenna can provide high magnetic field in the emission layer when VO₂ is metallic, leading to high emission of the magnetic dipoles; this emission is then lowered when VO₂ switches back to semiconductor. We finally optimized the contrast ratio by considering different orientation, distribution and nature of the dipoles, as well as the influence of a periodic Au nanoantenna pattern. As an example of a possible application, the design is optimized for the active control of an Er³⁺ doped SiO₂ emission layer. The combination of the emission efficiency increase due to the plasmonic nanoantenna resonances and the ultra-fast contrast control due to the phase-changing medium can have important applications in tunable efficient light sources and their nanoscale integration.

Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires

We report improved conductance by reducing the work function via incorporation of hydrogen into VO2 nanowires. The VO2 nanowires were prepared using the chemical vapor deposition method with V2O5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.

Electrical Transition in Isostructural VO2 Thin-Film Heterostructures

Control over the concurrent occurrence of structural (monoclinic to tetragonal) and electrical (insulator to the conductor) transitions presents a formidable challenge for VO₂-based thin film devices. Speed, lifetime, and reliability of these devices can be significantly improved by utilizing solely electrical transition while eliminating structural transition. We design a novel strain-stabilized isostructural VO₂ epitaxial thin-film system where the electrical transition occurs without any observable structural transition. The thin-film heterostructures with a completely relaxed NiO buffer layer have been synthesized allowing complete control over strains in VO₂ films. The strain trapping in VO₂ thin films occurs below a critical thickness by arresting the formation of misfit dislocations. We discover the structural pinning of the monoclinic phase in (10 ± 1 nm) epitaxial VO₂ films due to bandgap changes throughout the whole temperature regime as the insulator-to-metal transition occurs. Using density functional theory, we calculate that the strain in monoclinic structure reduces the difference between long and short V-V bond-lengths (Δ_V−V) in monoclinic structures which leads to a systematic decrease in the electronic bandgap of VO₂. This decrease in bandgap is additionally attributed to ferromagnetic ordering in the monoclinic phase to facilitate a Mott insulator without going through the structural transition.

Robust Coupling between Structural and Electronic Transitions in a Mott Material

The interdependences of different phase transitions in Mott materials are fundamental to the understanding of the mechanisms behind them. One of the most important relations is between the ubiquitous structural and electronic transitions. Using IR spectroscopy, optical reflectivity, and x-ray diffraction, we show that the metal-insulator transition is coupled to the structural phase transition in V_{2}O_{3} films. This coupling persists even in films with widely varying transition temperatures and strains. Our findings are in contrast to recent experimental findings and theoretical predictions. Using V_{2}O_{3} as a model system, we discuss the pitfalls in measurements of the electronic and structural states of Mott materials in general, calling for a critical examination of previous work in this field. Our findings also have important implications for the performance of Mott materials in next-generation neuromorphic computing technology.

Vacancy-Driven Robust Metallicity of Structurally Pinned Monoclinic Epitaxial VO2 Thin Films

Vanadium dioxide (VO₂) is a strongly correlated material with 3d electrons, which exhibits temperature-driven insulator-to-metal transition with a concurrent change in the crystal symmetry. Interestingly, even modest changes in stoichiometry-induced orbital occupancy dramatically affect the electrical conductivity of the system. Here, we report a successful transformation of epitaxial monoclinic VO₂ thin films from a conventionally insulating to permanently metallic behavior by manipulating the electron correlations. These ultrathin (∼10 nm) epitaxial VO₂ films were grown on NiO(111)/Al₂O₃(0001) pseudomorphically, where the large misfit between NiO and Al₂O₃ were fully relaxed by domain-matching epitaxy. Complete conversion from an insulator to permanent metallic phase is achieved through injecting oxygen vacancies ( x ∼ 0.20 ± 0.02) into the VO_{2- x} system via annealing under high vacuum (∼5 × 10^-7 Torr) and increased temperature (450 °C). Systematic introduction of oxygen vacancies partially converts V⁴⁺ to V³⁺ and generates unpaired electron charges which result in the emergence of donor states near the Fermi level. Through the detailed study of the vibrational modes by Raman spectroscopy, hardening of the V-V vibrational modes and stabilization of V-V dimers are observed in vacuum-annealed VO₂ films, providing conclusive evidence for stabilization of a monoclinic phase. This ultimately leads to convenient free-electron transport through the oxygen-deficient VO_{2- x} thin films, resulting in metallic characteristics at room temperature. With these results, we propose a defect engineering pathway through the control of oxygen vacancies to tune electrical and optical properties in epitaxial monoclinic VO₂.

Observation of Weakened V-V Dimers in the Monoclinic Metallic Phase of Strained VO_{2}

Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic stripe order near the metal-insulator transition (MIT) of strained VO_{2} represents periodic modulations in both crystal symmetry and V-V dimerization. Above the MIT, we unexpectedly find the long-range order of V-V dimer strength and crystal symmetry become dissociated beyond ≈200  nm, whereas the conductivity transition proceeds homogeneously in a narrow temperature range.

Isostructural metal-insulator transition in VO2

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.

Investigating Metal⁻Insulator Transition and Structural Phase Transformation in the (010)-VO₂/(001)-YSZ Epitaxial Thin Films

The VO₂ thin films with sharp metal–insulator transition (MIT) were epitaxially grown on (001)-oriented Yttria-stabilized zirconia substrates (YSZ) using radio-frequency (RF) magnetron sputtering techniques. The MIT and structural phase transition (SPT) were comprehensively investigated under in situ temperature conditions. The amplitude of MIT is in the order of magnitude of 10⁴, and critical temperature is 342 K during the heating cycle. It is interesting that both electron concentration and mobility are changed by two orders of magnitude across the MIT. This research is distinctively different from previous studies, which found that the electron concentration solely contributes to the amplitude of the MIT, although the electron mobility does not. Analysis of the SPT showed that the (010)-VO₂/(001)-YSZ epitaxial thin film presents a special multi-domain structure, which is probably due to the symmetry matching and lattice mismatch between the VO₂ and YSZ substrate. The VO₂ film experiences the SPT from the M1 phase at low temperature to a rutile phase at a high temperature. Moreover, the SPT occurs at the same critical temperature as that of the MIT. This work may shed light on a new MIT behavior and may potentially pave the way for preparing high-quality VO₂ thin films on cost-effective YSZ substrates for photoelectronic applications.

Reversible and repeatable phase transition at a negative temperature regime for doped and co-doped spin coated mixed valence vanadium oxide thin films

Smooth, uniform mixed valance vanadium oxide (VO) thin films are grown on flexible, transparent Kapton and opaque Al6061 substrates by the spin coating technique at a constant rpm of 3000. Various elements e.g., F, Ti, Mo and W are utilized for doping and co-doping of VO. All the spin coated films are heat treated in a vacuum. Other than the doping elements the existence of only V⁴⁺ and V⁵⁺ species is noticed in the present films. Transmittance as a function of wavelength and the optical band gap are also investigated for doped and co-doped VO thin films grown on a Kapton substrate. The highest transparency (∼75%) is observed for the Ti, Mo and F (i.e., Ti–Mo–FVO) co-doped VO system while the lowest transparency (∼35%) is observed for the F (i.e., FVO) doped VO system. Thus, the highest optical band gap is estimated as 2.73 eV for Ti–Mo–FVO and the lowest optical band gap (i.e., 2.59 eV) is found for the FVO system. The temperature dependent phase transition characteristics of doped and co-doped VO films on both Kapton and Al6061 are studied by the differential scanning calorimetry (DSC) technique. Reversible and repeatable phase transition is noticed in the range of −24 to −26.3 °C.

Smooth, uniform mixed valance vanadium oxide (VO) thin films are grown on flexible, transparent Kapton and opaque Al6061 substrates by the spin coating technique at a constant rpm of 3000.

Revealing the role of oxygen vacancies on the phase transition of VO2 film from the optical-constant measurements

Vanadium dioxide (VO₂) material shows a distinct metal–insulator transition (MIT) at the critical temperature of ∼340 K. Similar to other correlated oxides, the MIT properties of VO₂ is always sensitive to those crystal defects such as oxygen vacancies. In this study, we investigated the oxygen vacancies related phase transition behavior of VO₂ crystal film and systematically examined the effect of oxygen vacancies from the optical constant measurements. The results indicated that the oxygen vacancies changed not only the electron occupancy on V 3d–O 2p hybrid-orbitals, but also the electron–electron correlation energy and the related band gap, which modulated the MIT behavior and decreased the critical temperature resultantly. Our work not only provided a facile way to modulate the MIT behavior of VO₂ crystal film, but also revealed the effects of the oxygen vacancies on the electronic inter-band transitions as well as the electronic correlations in driving this MIT process.

Optical conductivity spectroscopy was performed to reveal the role of oxygen vacancies during VO₂ metal–insulator transition.

Orbital electronic occupation effect on metal-insulator transition in Ti x V1-x O2

A series of Ti _x V_1-x O₂ (0%  ⩽  x  ⩽  4.48%) thin films on c-plane sapphire substrates have been fabricated by co-sputtering oxidation solutions, and the metal-insulator transition temperature (T _MIT) of Ti _x V_1-x O₂ films rises monotonically at the rate of 1.64 K/at.% Ti. The x-ray diffraction measurement results show that, after Ti⁴⁺ ion doping, the rutile structure expands along the c _r axis while shrinking along the a _r and b _r axis simultaneously. It makes the V-O bond length shorter, which is believed to upshift the π ^* orbitals. The rising of π ^* orbitals in Ti-doped VO₂ has been illustrated by ultraviolet-infrared spectroscopy and first-principles calculation. With the Ti⁴⁺ ion doping concentration increasing, the energy levels of π ^* orbitals are elevated and the electronic occupation of π ^* orbitals decreases, which weakens the shielding for the strong electron-electron correlations in the d_|| orbital and result in the T _MIT rising. The research reveals that the T _MIT of VO₂ can be effected by the electronic occupancy of π ^* orbitals in a rutile state, which is helpful for developing VO₂-based thermal devices.

Photoinduced Strain Release and Phase Transition Dynamics of Solid-Supported Ultrathin Vanadium Dioxide

The complex phase transitions of vanadium dioxide (VO₂) have drawn continual attention for more than five decades. Dynamically, ultrafast electron diffraction (UED) with atomic-scale spatiotemporal resolution has been employed to study the reaction pathway in the photoinduced transition of VO₂, using bulk and strain-free specimens. Here, we report the UED results from 10-nm-thick crystalline VO₂ supported on Al₂O₃(0001) and examine the influence of surface stress on the photoinduced structural transformation. An ultrafast release of the compressive strain along the surface-normal direction is observed at early times following the photoexcitation, accompanied by faster motions of vanadium dimers that are more complex than simple dilation or bond tilting. Diffraction simulations indicate that the reaction intermediate involved on picosecond times may not be a single state, which implies non-concerted atomic motions on a multidimensional energy landscape. At longer times, a laser fluence multiple times higher than the thermodynamic enthalpy threshold is required for complete conversion from the initial monoclinic structure to the tetragonal lattice. For certain crystalline domains, the structural transformation is not seen even on nanosecond times following an intense photoexcitation. These results signify a time-dependent energy distribution among various degrees of freedom and reveal the nature of and the impact of strain on the photoinduced transition of VO₂.

The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions

Active and widely controllable phase transition optical materials have got rapid applications in energy-efficient electronic devices, field of meta-devices and so on. Here, we report the optical properties of the vanadium dioxide (VO₂)/aluminum-doped zinc oxide (Al:ZnO) hybrid n-n type heterojunctions and the corresponding electro-optic performances of the devices. Various structures are fabricated to compare the discrepancy of the optical and electrical characteristics. It was found that the reflectance spectra presents the wheel phenomenon rather than increases monotonically with temperature at near-infrared region range. The strong interference effects was found in the hybrid multilayer heterojunction. In addition, the phase transition temperature decreases with increasing the number of the Al:ZnO layer, which can be ascribed to the electron injection to the VO₂ film from the Al:ZnO interface. Affected by the double layer Al:ZnO, the abnormal Raman vibration mode was presented in the insulator region. By adding the external voltage on the Al₂O₃/Al:ZnO/VO₂/Al:ZnO, Al₂O₃/Al:ZnO/VO₂ and Al₂O₃/VO₂/Al:ZnO thin-film devices, the infrared optical spectra of the devices can be real-time manipulated by an external voltage. The main effect of joule heating and assistant effect of electric field are illustrated in this work. It is believed that the results will add a more thorough understanding in the application of the VO₂/transparent conductive film device.

First-principles study of the effect of oxygen vacancy and strain on the phase transition temperature of VO2

The calculated oxygen-vacancy diffusion barrier indicates that the existence of oxygen-vacancy could stabilize the rutile phase at a low temperature.