Photoconductive terahertz generation from textured semiconductor materials

Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters

This work presents a study of photoconductive (PC) terahertz (THz) emitters based upon varied bow-tie (BT) antenna structures on the semi-insulating (SI) forms of GaAs and InP. The BT antennas have electrodes in the form of a Sharp BT, a Broad BT, an Asymmetric BT, a Blunted BT, and a Doubled BT. The study explores the main features of PC THz emitters for spectroscopic studies and sensors application in terms of THz field amplitude and spectral bandwidth. The emitters’ performance levels are found to depend strongly upon the PC material and antenna structure. The SI-InP emitters display lower THz field amplitude and narrower bandwidth compared to the SI-GaAs emitters with the same structure (and dimensions). The characterized Doubled BT structure yields a higher THz field amplitude, while the characterized Asymmetric BT structure with flat edges yields a higher bandwidth in comparison to the sharp-edged structures. This knowledge on the PC THz emitter characteristics, in terms of material and structure, can play a key role in future implementations and applications of THz sensor technology.

Photoconductive terahertz generation in semi-insulating GaAs and InP under the extremes of bias field and pump fluence

This Letter analyzes photoconductive (PC) terahertz (THz) emitters based on the semi-insulating (SI) forms of GaAs and InP. The dependencies of the emitters are studied under the extremes of the bias field and pump fluence to reveal the underlying physics of charge carrier photoexcitation, transport, and emission. The bias field dependence shows that SI-GaAs PC THz emitters are preferentially subject to space-charge-limited current, under the influence of trap states, while SI-InP PC THz emitters are preferentially subject to sustained current, due to a prolonged charge carrier lifetime and the ensuing joule heating. The pump fluence dependence shows space-charge and near-field screening for all emitters, with SI-GaAs predisposed to near-field screening (under the influence of transient mobility) and SI-InP predisposed to space-charge screening. Such findings can support a deeper understanding of the underlying physics and optimal performance of SI-GaAs and SI-InP PC THz emitters.

Characterisation of graphene electrodes for microsystems and microfluidic devices

Fabrication of microsystems is traditionally achieved with photolithography. However, this fabrication technique can be expensive and non-ideal for integration with microfluidic systems. As such, graphene fabrication is explored as an alternative. This graphene fabrication can be achieved with graphite oxide undergoing optical exposure, using optical disc drives, to impose specified patterns and convert to graphene. This work characterises such a graphene fabrication, and provides fabrication, electrical, microfluidic, and scanning electron microscopy (SEM) characterisations. In the fabrication characterisation, a comparison is performed between traditional photolithography fabrication and the new graphene fabrication. (Graphene fabrication details are also provided.) Here, the minimum achievable feature size is identified and graphene fabrication is found to compare favourably with traditional photolithography fabrication. In the electrical characterisation, the resistivity of graphene is measured as a function of fabrication dose in the optical disc drive and saturation effects are noted. In the microfluidic characterisation, the wetting properties of graphene are shown through an investigation of the contact angle of a microdroplet positioned on a surface that is treated with varying fabrication dose. In the SEM characterisation, the observed effects in the previous characterisations are attributed to chemical or physical effects through measurement of SEM energy dispersive X-ray spectra and SEM images, respectively. Overall, graphene fabrication is revealed to be a viable option for development of microsystems and microfluidics.

Improvement of Terahertz Photoconductive Antenna using Optical Antenna Array of ZnO Nanorods

An efficient terahertz (THz) photoconductive antenna (PCA), as a major constituent for the generation or detection of THz waves, plays an essential role in bridging microwave-to-photonic gaps. Here, we propose an impressive approach comprising the use of arrayed zinc oxide nanorods (ZnO NRs) as an optical nanoantenna over an anti-reflective layer (silicon nitride) in the antenna gap to boost the photocurrent and consequently the THz signal. The numerical approach applied in investigating the optical behavior of the structure, demonstrates a significant field enhancement within the LT-GaAs layer due to the optical antenna performing simultaneously as a concentrator and an antireflector which behaves as a graded-refractive index layer. ZnO NRs have been fabricated on the PCA gap using the hydrothermal method as a simple, low cost and production compatible fabrication method compared to other complex methods used for the optical nanoantennas. Compared to the conventional PCA with a traditional antireflection coating, the measured THz power by time domain spectroscopy (TDS) is increased more than 4 times on average over the 0.1–1.2 THz range.