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Paik K, Na JI, Huh CH, Shin JW. Particulate Matter and Its Molecular Effects on Skin: Implications for Various Skin Diseases. Int J Mol Sci 2024; 25:9888. [PMID: 39337376 PMCID: PMC11432173 DOI: 10.3390/ijms25189888] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2024] [Revised: 09/09/2024] [Accepted: 09/11/2024] [Indexed: 09/30/2024] Open
Abstract
Particulate matter (PM) is a harmful air pollutant composed of chemicals and metals which affects human health by penetrating both the respiratory system and skin, causing oxidative stress and inflammation. This review investigates the association between PM and skin disease, focusing on the underlying molecular mechanisms and specific disease pathways involved. Studies have shown that PM exposure is positively associated with skin diseases such as atopic dermatitis, psoriasis, acne, and skin aging. PM-induced oxidative stress damages lipids, proteins, and DNA, impairing cellular functions and triggering inflammatory responses through pathways like aryl hydrocarbon receptor (AhR), NF-κB, and MAPK. This leads to increased production of inflammatory cytokines and exacerbates skin conditions. PM exposure exacerbates AD by triggering inflammation and barrier disruption. It disrupts keratinocyte differentiation and increases pro-inflammatory cytokines in psoriasis. In acne, it increases sebum production and inflammatory biomarkers. It accelerates skin aging by degrading ECM proteins and increasing MMP-1 and COX2. In conclusion, PM compromises skin health by penetrating skin barriers, inducing oxidative stress and inflammation through mechanisms like ROS generation and activation of key pathways, leading to cellular damage, apoptosis, and autophagy. This highlights the need for protective measures and targeted treatments to mitigate PM-induced skin damage.
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Affiliation(s)
- Kyungho Paik
- Department of Dermatology, Seoul National University Bundang Hospital, Seongnam 13620, Republic of Korea
- Department of Dermatology, Seoul National University College of Medicine, Seoul 03080, Republic of Korea
| | - Jung-Im Na
- Department of Dermatology, Seoul National University Bundang Hospital, Seongnam 13620, Republic of Korea
- Department of Dermatology, Seoul National University College of Medicine, Seoul 03080, Republic of Korea
| | - Chang-Hun Huh
- Department of Dermatology, Seoul National University Bundang Hospital, Seongnam 13620, Republic of Korea
- Department of Dermatology, Seoul National University College of Medicine, Seoul 03080, Republic of Korea
| | - Jung-Won Shin
- Department of Dermatology, Seoul National University Bundang Hospital, Seongnam 13620, Republic of Korea
- Department of Dermatology, Seoul National University College of Medicine, Seoul 03080, Republic of Korea
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2
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Amba Sankar KN, Kesavan L, Saha B, Jyolsnaraj MK, Mohan S, Nandakumar P, Mohanta K, Kvarnström C. Renewable synthesis of MoO 3 nanosheets via low temperature phase transition for supercapacitor application. Sci Rep 2024; 14:20503. [PMID: 39227597 PMCID: PMC11372194 DOI: 10.1038/s41598-024-69765-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Accepted: 08/08/2024] [Indexed: 09/05/2024] Open
Abstract
2D transition metal oxides have created revolution in the field of supercapacitors due to their fabulous electrochemical performance and stability. Molybdenum trioxides (MoO3) are one of the most prominent solid-state materials employed in energy storage applications. In this present work, we report a non-laborious physical vapor deposition (PVD) and ultrasonic extraction (USE) followed by vacuum assisted solvothermal treatment (VST) route (DEST), to produce 2D MoO3 nanosheets, without any complex equipment requirements. Phase transition in MoO3 is often achieved at very high temperatures by other reported works. But our well-thought-out, robust approach led to a phase transition from one phase to another phase, for e.g., hexagonal (h-MoO3) to orthorhombic (α-MoO3) structure at very low temperature (90 °C), using a green solvent (H2O) and renewable energy. This was achieved by implementing the concept of oxygen vacancy defects and solvolysis. The synthesized 2D nanomaterials were investigated for electrochemical performance as supercapacitor electrode materials. The α-MoO3 electrode material has shown supreme capacitance (256 Fg-1) than its counterpart h-MoO3 and mixed phases (h and α) of MoO3 (< 50 Fg-1). Thus, this work opens up a new possibility to synthesize electrocapacitive 2D MoO3 nanosheets in an eco-friendly and energy efficient way; hence can contribute in renewable circular economy.
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Affiliation(s)
- K N Amba Sankar
- Department of Electronics, PSG College of Arts and Science, Coimbatore, Tamil Nadu, 641014, India.
| | - Lokesh Kesavan
- Department of Chemistry, Materials Chemistry, University of Turku, Henrikinkatu 2, 20014, Turku, Finland.
| | - Bikash Saha
- Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai, 400085, India
- Homi Bhabha National Institute, Anushakti Nagar, Mumbai, 400 094, India
- Department of Physics and Astronomy, University of Missouri, 223 Physics Building, Columbia, MO, 65211, USA
| | - M K Jyolsnaraj
- Nanotech Research Innovation and Incubation Centre (NRIIC), PSG Institute of Advanced Studies, Avinashi Road, Coimbatore, Tamil Nadu, 641004, India
| | - S Mohan
- Physical and Materials Chemistry Division, CSIR-National Chemical Laboratory, Pune, 411008, India
| | - P Nandakumar
- Department of Electronics, PSG College of Arts and Science, Coimbatore, Tamil Nadu, 641014, India
| | - Kallol Mohanta
- Nanotech Research Innovation and Incubation Centre (NRIIC), PSG Institute of Advanced Studies, Avinashi Road, Coimbatore, Tamil Nadu, 641004, India.
- Senior Research Scientist, Prophecy Sensorlytics LLC, GN4, Sector V, Salt Lake, Kolkata, West Bengal, 700156, India.
| | - Carita Kvarnström
- Department of Chemistry, Materials Chemistry, University of Turku, Henrikinkatu 2, 20014, Turku, Finland.
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3
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Zheng X, Yang Y, Fang C, Liu X. Stability of oxygen vacancies at metal/oxide interfaces. Phys Chem Chem Phys 2023; 25:19970-19975. [PMID: 37459061 DOI: 10.1039/d3cp00765k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
We investigated the influence of work function and charge doping on the formation of oxygen vacancies in metal/oxide heterojunctions by first-principles calculations. SrTiO3 is used as a typical oxide. Simple metals Pt, Au and Ag are used as electrodes. We show that electron doping could improve the formation energy of oxygen vacancies. In such a heterojunction, we found that the work function of the metal electrode affects the stability of oxygen vacancies in SrTiO3. For an electrode with a smaller work function, more electrons are induced and accumulated in the oxides near the interface and improve the formation energy of oxygen vacancies. We also studied the effect of ferroelectric polarization in a heterojunction of metal/BaTiO3 and found similar properties. We hope that our work could help in the design of complex-oxide-based electronic devices.
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Affiliation(s)
- Xingwen Zheng
- School of Physics, Shandong University, Ji'nan 250100, China.
| | - Ying Yang
- School of Physics, Shandong University, Ji'nan 250100, China.
| | - Changfeng Fang
- Center for Optics Research and Engineering (CORE) and MOE Key Laboratory of Laser & Infrared Systems, Shandong University, Qingdao 266237, China.
| | - Xiaohui Liu
- School of Physics, Shandong University, Ji'nan 250100, China.
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4
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Yeo Y, Hwang SY, Yeo J, Kim J, Jang J, Park HS, Kim YJ, Le DD, Song K, Kim M, Ryu S, Choi SY, Yang CH. Configurable Crack Wall Conduction in a Complex Oxide. NANO LETTERS 2023; 23:398-406. [PMID: 36595450 DOI: 10.1021/acs.nanolett.2c02640] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Mobile defects in solid-state materials play a significant role in memristive switching and energy-efficient neuromorphic computation. Techniques for confining and manipulating point defects may have great promise for low-dimensional memories. Here, we report the spontaneous gathering of oxygen vacancies at strain-relaxed crack walls in SrTiO3 thin films grown on DyScO3 substrates as a result of flexoelectricity. We found that electronic conductance at the crack walls was enhanced compared to the crack-free region, by a factor of 104. A switchable asymmetric diode-like feature was also observed, and the mechanism is discussed, based on the electrical migration of oxygen vacancy donors in the background of Sr-deficient acceptors forming n+-n or n-n+ junctions. By tracing the temporal relaxations of surface potential and lattice expansion of a formed region, we determine the diffusivity of mobile defects in crack walls to be 1.4 × 10-16 cm2/s, which is consistent with oxygen vacancy kinetics.
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Affiliation(s)
- Youngki Yeo
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Soo-Yoon Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang37673, Republic of Korea
| | - Jinwook Yeo
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Jihun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Jinhyuk Jang
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang37673, Republic of Korea
| | - Heung-Sik Park
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Yong-Jin Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Duc Duy Le
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Kyung Song
- Department of Materials Analysis and Evaluation, Korea Institute of Materials Science, Changwon51508, Republic of Korea
| | - Moonhong Kim
- Division of Mechanical Engineering, Korea Maritime & Ocean University, 727 Taejong-ro, Yeongdo-gu, Busan49112, South Korea
| | - Seunghwa Ryu
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang37673, Republic of Korea
| | - Chan-Ho Yang
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- KAIST Institute for the NanoCentury, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon34141, Republic of Korea
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5
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Ekren D, Cao J, Azough F, Kepaptsoglou D, Ramasse Q, Kinloch IA, Freer R. Controlling the Thermoelectric Behavior of La-Doped SrTiO 3 through Processing and Addition of Graphene Oxide. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53711-53723. [PMID: 36413504 PMCID: PMC9743083 DOI: 10.1021/acsami.2c14408] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Accepted: 11/01/2022] [Indexed: 06/16/2023]
Abstract
The addition of graphene has been reported as a potential route to enhance the thermoelectric performance of SrTiO3. However, the interplay between processing parameters and graphene addition complicates understanding this enhancement. Herein, we examine the effects of processing parameters and graphene addition on the thermoelectric performance of La-doped SrTiO3 (LSTO). Briefly, two types of graphene oxide (GO) at different oxidation degrees were used, while the LSTO pellets were densified under two conditions with different reducing strengths (with/without using oxygen-scavenging carbon powder bed muffling). Raman imaging of the LSTO green body and sintered pellets suggests that the added GO sacrificially reacts with the lattice oxygen, which creates more oxygen vacancies and improves electrical conductivity regardless of the processing conditions. The addition of mildly oxidized electrochemical GO (EGO) yields better performance than the conventional heavily oxidized chemical GO (CGO). Moreover, we found that muffling the green body with an oxygen-scavenging carbon powder bed during sintering is vital to achieving a single-crystal-like temperature dependence of electrical conductivity, implying that a highly reducing environment is critical for eliminating the grain boundary barriers. Combining 1.0 wt % EGO addition with a highly reducing environment leads to the highest electrical conductivity of 2395 S cm-1 and power factor of 2525μW m-1 K-2 at 300 K, with an improved average zT value across the operating temperature range of 300-867 K. STEM-EELS maps of the optimized sample show a pronounced depletion of Sr and evident deficiency of O and La at the grain boundary region. Theoretical modeling using a two-phase model implies that the addition of GO can effectively improve carrier mobility in the grain boundary phase. This work provides guidance for the development of high-performance thermoelectric ceramic oxides.
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Affiliation(s)
- Dursun Ekren
- Department
of Materials, University of Manchester, Oxford Road, ManchesterM13 9PL, U.K.
- Department
of Metallurgical and Materials Engineering, Iskenderun Technical University, İskenderun31200, Hatay, Turkey
| | - Jianyun Cao
- Department
of Materials, University of Manchester, Oxford Road, ManchesterM13 9PL, U.K.
- Key
Laboratory of LCR Materials and Devices of Yunnan Province, School
of Materials Science and Energy, Yunnan
University, Kunming650500, China
| | - Feridoon Azough
- Department
of Materials, University of Manchester, Oxford Road, ManchesterM13 9PL, U.K.
| | - Demie Kepaptsoglou
- SuperSTEM
Laboratory, SciTech Daresbury Campus, Daresbury, WarringtonWA4
4AD, U.K.
- Department
of Physics, University of York, YorkYO10 5DD, U.K.
| | - Quentin Ramasse
- SuperSTEM
Laboratory, SciTech Daresbury Campus, Daresbury, WarringtonWA4
4AD, U.K.
- School of
Chemical and Process Engineering, University
of Leeds, LeedsLS2 9JT, U.K.
| | - Ian A. Kinloch
- Department
of Materials, University of Manchester, Oxford Road, ManchesterM13 9PL, U.K.
- Henry
Royce Institute and National Graphene Institute, University of Manchester, Oxford Road, ManchesterM13 9PL, U.K.
| | - Robert Freer
- Department
of Materials, University of Manchester, Oxford Road, ManchesterM13 9PL, U.K.
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6
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A comparison of CO oxidation on cleaned ZnO [Formula: see text] surface and defective ZnO [Formula: see text] surface using density functional theory studies. J Mol Model 2021; 28:12. [PMID: 34936036 DOI: 10.1007/s00894-021-05011-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Accepted: 12/14/2021] [Indexed: 10/19/2022]
Abstract
In this work, we employed continuously the DFT calculations to study CO oxidation reaction on the defective ZnO [Formula: see text] surface. The oxygen (O) atom was removed from cleaned surface ZnO [Formula: see text] (CS-ZnO) to form the defective ZnO [Formula: see text] surface (DS-ZnO), which contained an O vacancy defect. Hereafter, the formation of oxygen vacancy was found to increase the adsorption abilities of O2 and CO on DS-ZnO, in comparison to those on CS-ZnO. Many steps of elementary reactions including O2 and CO adsorption, reacting between CO and O to form CO2, and CO2 desorption on DS-ZnO were investigated and calculated in terms of the configurations, activation energy, and reaction energy, to which the reaction pathway of CO oxidation has been found. Based on this pathway, the calculation results of the rate controlling step of 0.84 eV corresponding to the exothermic reaction energy of 4.11 eV on DS-ZnO indicated that the CO oxidation on DS-ZnO was more thermodynamically favorable and less kinetically desirable than that on CS-ZnO. In addition, the natural bonds of O2 and CO adsorptions on DS-ZnO were also analyzed by the partial density of state (PDOS) and the electron density difference (EDD) contour plots.
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7
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Ding J, Cheng J, Dogan F, Li Y, Lin W, Yao Y, Manchon A, Yang K, Wu T. Two-Dimensional Electron Gas at the Spinel/Perovskite Interface: Suppression of Polar Catastrophe by an Ultrathin Layer of Interfacial Defects. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42982-42991. [PMID: 32829635 DOI: 10.1021/acsami.0c13337] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional electron gas (2DEG) at the interface between two insulating perovskite oxides has attracted much interest for both fundamental physics and potential applications. Here, we report the discovery of a new 2DEG formed at the interface between spinel MgAl2O4 and perovskite SrTiO3. Transport measurements, electron microscopy imaging, and first-principles calculations reveal that the interfacial 2DEG is closely related to the symmetry breaking at the MgAl2O4/SrTiO3 interface. The critical film thickness for the insulator-to-metal transition is approximately 32 Å, which is twice as thick as that reported on the widely studied LaAlO3/SrTiO3 system. Scanning transmission electron microscopy imaging indicates the formation of interfacial Ti-Al antisite defects with a thickness of ∼4 Å. First-principles density functional theory calculations indicate that the coexistence of the antisite defects and surface oxygen vacancies may explain the formation of interfacial 2DEG as well as the observed critical film thickness. The discovery of 2DEG at the spinel/perovskite interface introduces a new material platform for designing oxide interfaces with desired characteristics.
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Affiliation(s)
- Junfeng Ding
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - Jianli Cheng
- Department of NanoEngineering, University of California, San Diego, La Jolla, California 92093-0448, United States
| | - Fatih Dogan
- College of Engineering and Technology, American University of the Middle East, Kuwait
| | - Yangyang Li
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore
| | - Yingbang Yao
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
| | - Aurelien Manchon
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
- Aix-Marseille Univ, CNRS, CINaM, Marseille 13288, France
| | - Kesong Yang
- Department of NanoEngineering, University of California, San Diego, La Jolla, California 92093-0448, United States
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
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8
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Zhang FX, Xue H, Keum JK, Boulle A, Zhang Y, Weber WJ. Symmetry degeneration and room temperature ferroelectricity in ion-irradiated SrTiO 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:355405. [PMID: 32353841 DOI: 10.1088/1361-648x/ab8ec7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2020] [Accepted: 04/30/2020] [Indexed: 06/11/2023]
Abstract
Polar phonon modes associated with room temperature ferroelectricity are observed in SrTiO3single crystals irradiated with Ti ions. Quantitative strain analysis reveals that irradiation-induced out-of-plane strain drives the centrosymmetric cubic SrTiO3to a tetragonal-like structure in the maximum damaged region. Energy transfer from ions to electrons during ion irradiation yields defects in SrTiO3that also plays an important role for the room temperature ferroelectricity. Different from thin film techniques, the ferroelectricity in the ion irradiated SrTiO3can occur for much larger thicknesses, depending on the energy and type of ion.
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Affiliation(s)
- F X Zhang
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Haizhou Xue
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, United States of America
| | - J K Keum
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - A Boulle
- Institut de Recherche sur les Céramiques, CNRS UMR 7315, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges Cedex, France
| | - Yanwen Zhang
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, United States of America
| | - W J Weber
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, United States of America
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9
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Kang KT, Park J, Suh D, Choi WS. Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803732. [PMID: 30589101 DOI: 10.1002/adma.201803732] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2018] [Revised: 09/18/2018] [Indexed: 05/28/2023]
Abstract
The marriage between a 2D layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that cannot be achieved in either material alone. Interesting recent discoveries in systems such as graphene/SrTiO3 , graphene/LaAlO3 /SrTiO3 , graphene/ferroelectric oxide, MoS2 /SrTiO3 , and FeSe/SrTiO3 heterostructures include voltage scaling in field-effect transistors, charge state coupling across an interface, quantum conductance probing of the electrochemical activity, novel memory functions based on charge traps, and greatly enhanced superconductivity. In this context, various properties and functionalities appearing in numerous different 2DLM/TMO heterostructure systems are reviewed. The results imply that the multidimensional heterostructure approach based on the disparate material systems leads to an entirely new platform for the study of condensed matter physics and materials science. The heterostructures are also highly relevant technologically as each constituent material is a promising candidate for next-generation optoelectronic devices.
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Affiliation(s)
- Kyeong Tae Kang
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Korea
| | - Jeongmin Park
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, Korea
| | - Dongseok Suh
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Korea
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10
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Li Y, Yu ZG, Wang L, Weng Y, Tang CS, Yin X, Han K, Wu H, Yu X, Wong LM, Wan D, Wang XR, Chai J, Zhang YW, Wang S, Wang J, Wee ATS, Breese MBH, Pennycook SJ, Venkatesan T, Dong S, Xue JM, Chen J. Electronic-reconstruction-enhanced hydrogen evolution catalysis in oxide polymorphs. Nat Commun 2019; 10:3149. [PMID: 31316069 PMCID: PMC6637208 DOI: 10.1038/s41467-019-11124-w] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/10/2018] [Accepted: 06/21/2019] [Indexed: 11/08/2022] Open
Abstract
Transition metal oxides exhibit strong structure-property correlations, which has been extensively investigated and utilized for achieving efficient oxygen electrocatalysts. However, high-performance oxide-based electrocatalysts for hydrogen evolution are quite limited, and the mechanism still remains elusive. Here we demonstrate the strong correlations between the electronic structure and hydrogen electrocatalytic activity within a single oxide system Ti2O3. Taking advantage of the epitaxial stabilization, the polymorphism of Ti2O3 is extended by stabilizing bulk-absent polymorphs in the film-form. Electronic reconstructions are realized in the bulk-absent Ti2O3 polymorphs, which are further correlated to their electrocatalytic activity. We identify that smaller charge-transfer energy leads to a substantial enhancement in the electrocatalytic efficiency with stronger hybridization of Ti 3d and O 2p orbitals. Our study highlights the importance of the electronic structures on the hydrogen evolution activity of oxide electrocatalysts, and also provides a strategy to achieve efficient oxide-based hydrogen electrocatalysts by epitaxial stabilization of bulk-absent polymorphs.
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Affiliation(s)
- Yangyang Li
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Zhi Gen Yu
- Institute of High Performance Computing, Singapore, 138632, Singapore
| | - Ling Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Yakui Weng
- School of Science, Nanjing University of Posts and Telecommunications (NUPT), Nanjing, 210023, China
| | - Chi Sin Tang
- Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117542, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Singapore
| | - Xinmao Yin
- Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117542, Singapore
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Kun Han
- School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Haijun Wu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Lai Mun Wong
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634, Singapore
| | - Dongyang Wan
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
| | - Xiao Renshaw Wang
- School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jianwei Chai
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634, Singapore
| | - Yong-Wei Zhang
- Institute of High Performance Computing, Singapore, 138632, Singapore
| | - Shijie Wang
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Andrew T S Wee
- Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117542, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Singapore
| | - Mark B H Breese
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Stephen J Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Singapore
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
| | - Thirumalai Venkatesan
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117542, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Singapore
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
| | - Shuai Dong
- School of Physics, Southeast University, Nanjing, 211189, China
| | - Jun Min Xue
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
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11
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Yoo TS, Lee SA, Roh C, Kang S, Seol D, Guan X, Bae JS, Kim J, Kim YM, Jeong HY, Jeong S, Mohamed AY, Cho DY, Jo JY, Park S, Wu T, Kim Y, Lee J, Choi WS. Ferroelectric Polarization Rotation in Order-Disorder-Type LiNbO 3 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:41471-41478. [PMID: 30406659 DOI: 10.1021/acsami.8b12900] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder-type LiNbO3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction.
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Affiliation(s)
| | | | - Changjae Roh
- Department of Physics and Photon Science , Gwangju Institute of Science and Technology (GIST) , Gwangju 61005 , Korea
| | | | | | - Xinwei Guan
- Materials Science and Engineering , King Abdullah University of Science and Technology , Thuwal 23955-6900 , Saudi Arabia
| | - Jong-Seong Bae
- Busan Center , Korea Basic Science Institute , Busan 46742 , Korea
| | - Jiwoong Kim
- Department of Physics , Pusan National University , Busan 46241 , Korea
| | | | - Hu Young Jeong
- UNIST Central Research Facilities , Ulsan National Institute of Science and Technology , Ulsan 44919 , Korea
| | | | - Ahmed Yousef Mohamed
- IPIT & Department of Physics , Chonbuk National University , Jeonju 54896 , Korea
| | - Deok-Yong Cho
- IPIT & Department of Physics , Chonbuk National University , Jeonju 54896 , Korea
| | - Ji Young Jo
- School of Materials Science and Engineering , Gwangju Institute of Science and Technology (GIST) , Gwangju 61005 , Korea
| | - Sungkyun Park
- Department of Physics , Pusan National University , Busan 46241 , Korea
| | - Tom Wu
- Materials Science and Engineering , King Abdullah University of Science and Technology , Thuwal 23955-6900 , Saudi Arabia
- School of Materials Science and Engineering , University of New South Wales , Sydney , NSW 2052 , Australia
| | | | - Jongseok Lee
- Department of Physics and Photon Science , Gwangju Institute of Science and Technology (GIST) , Gwangju 61005 , Korea
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12
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Woo S, Lee SA, Mun H, Choi YG, Zhung CJ, Shin S, Lacotte M, David A, Prellier W, Park T, Kang WN, Lee JS, Kim SW, Choi WS. Enhanced magnetic and thermoelectric properties in epitaxial polycrystalline SrRuO 3 thin films. NANOSCALE 2018; 10:4377-4384. [PMID: 29450417 DOI: 10.1039/c7nr09627e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Transition metal oxide thin films show versatile electric, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the modification of magnetic and thermal transport properties by fabricating single- and polycrystalline epitaxial SrRuO3 thin films using pulsed laser epitaxy. Using the epitaxial stabilization technique with an atomically flat polycrystalline SrTiO3 substrate, an epitaxial polycrystalline SrRuO3 thin film with the crystalline quality of each grain comparable to that of its single-crystalline counterpart is realized. In particular, alleviated compressive strain near the grain boundaries due to coalescence is evidenced structurally, which induced the enhancement of ferromagnetic ordering of the polycrystalline epitaxial thin film. The structural variations associated with the grain boundaries further reduce the thermal conductivity without deteriorating the electronic transport, and lead to an enhanced thermoelectric efficiency in the epitaxial polycrystalline thin films, compared with their single-crystalline counterpart.
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Affiliation(s)
- Sungmin Woo
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea.
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13
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Pai YY, Tylan-Tyler A, Irvin P, Levy J. Physics of SrTiO 3-based heterostructures and nanostructures: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036503. [PMID: 29424362 DOI: 10.1088/1361-6633/aa892d] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.
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Affiliation(s)
- Yun-Yi Pai
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America. Pittsburgh Quantum Institute, Pittsburgh, PA 15260, United States of America
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14
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Khare A, Shin D, Yoo TS, Kim M, Kang TD, Lee J, Roh S, Jung IH, Hwang J, Kim SW, Noh TW, Ohta H, Choi WS. Topotactic Metal-Insulator Transition in Epitaxial SrFeO x Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29. [PMID: 28758333 DOI: 10.1002/adma.201606566] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2016] [Revised: 04/28/2017] [Indexed: 05/12/2023]
Abstract
Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeOx epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeOx thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions.
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Affiliation(s)
- Amit Khare
- Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Dongwon Shin
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Tae Sup Yoo
- Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Minu Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul National University, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Tae Dong Kang
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul National University, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Seulki Roh
- Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea
| | - In-Ho Jung
- Department of Mining and Materials Engineering, McGill University, Montreal, QC, H3A 0C5, Canada
| | - Jungseek Hwang
- Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Sung Wng Kim
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul National University, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Hiromichi Ohta
- Research Institute for Electronic Science, Hokkaido University, Sapporo, 001-0020, Japan
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea
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15
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Tuning electromagnetic properties of SrRuO 3 epitaxial thin films via atomic control of cation vacancies. Sci Rep 2017; 7:11583. [PMID: 28912587 PMCID: PMC5599527 DOI: 10.1038/s41598-017-11856-z] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2017] [Accepted: 08/31/2017] [Indexed: 11/15/2022] Open
Abstract
Elemental defect in transition metal oxides is an important and intriguing subject that result in modifications in variety of physical properties including atomic and electronic structure, optical and magnetic properties. Understanding the formation of elemental vacancies and their influence on different physical properties is essential in studying the complex oxide thin films. In this study, we investigated the physical properties of epitaxial SrRuO3 thin films by systematically manipulating cation and/or oxygen vacancies, via changing the oxygen partial pressure (P(O2)) during the pulsed laser epitaxy (PLE) growth. Ru vacancies in the low-P(O2)-grown SrRuO3 thin films induce lattice expansion with the suppression of the ferromagnetic TC down to ~120 K. Sr vacancies also disturb the ferromagnetic ordering, even though Sr is not a magnetic element. Our results indicate that both A and B cation vacancies in an ABO3 perovskite can be systematically engineered via PLE, and the structural, electrical, and magnetic properties can be tailored accordingly.
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16
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Kang KT, Kang H, Park J, Suh D, Choi WS. Quantum Conductance Probing of Oxygen Vacancies in SrTiO 3 Epitaxial Thin Film using Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1700071. [PMID: 28301058 DOI: 10.1002/adma.201700071] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2017] [Revised: 02/03/2017] [Indexed: 06/06/2023]
Abstract
Quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate-voltage sweep range is gradually increased in the device, systematic generation and annihilation of oxygen vacancies, evidenced from the hysteretic conductance behavior in the graphene, are observed. Furthermore, based on the experimentally observed linear scaling relation between the effective capacitance and the voltage sweep range, a simple model is constructed to manifest the relationship among the dielectric properties of STO with oxygen vacancies. The inherent quantum Hall conductance in graphene can be considered as a sensitive, robust, and noninvasive probe for understanding the electronic and ionic phenomena in complex transition-metal oxides without impairing the oxide layer underneath.
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Affiliation(s)
- Kyeong Tae Kang
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon, 16419, Korea
| | - Haeyong Kang
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, Korea
| | - Jeongmin Park
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon, 16419, Korea
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, Korea
| | - Dongseok Suh
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Korea
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17
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Enriquez E, Chen A, Harrell Z, Dowden P, Koskelo N, Roback J, Janoschek M, Chen C, Jia Q. Oxygen Vacancy-Tuned Physical Properties in Perovskite Thin Films with Multiple B-site Valance States. Sci Rep 2017; 7:46184. [PMID: 28417954 PMCID: PMC5394692 DOI: 10.1038/srep46184] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2016] [Accepted: 03/10/2017] [Indexed: 11/08/2022] Open
Abstract
Controlling oxygen content in perovskite oxides with ABO3 structure is one of most critical steps for tuning their functionality. Notably, there have been tremendous efforts to understand the effect of changes in oxygen content on the properties of perovskite thin films that are not composed of cations with multiple valance states. Here, we study the effect of oxygen vacancies on structural and electrical properties in epitaxial thin films of SrFeO3-δ (SFO), where SFO is a compound with multiple valance states at the B site. Various annealing treatments are used to produce different oxygen contents in the films, which has resulted in significant structural changes in the fully strained SFO films. The out-of-plane lattice parameter and tetragonality increase with decreasing oxygen concentration, indicating the crystal structure is closely related to the oxygen content. Importantly, variation of the oxygen content in the films significantly affects the dielectric properties, leakage conduction mechanisms, and the resistive hysteresis of the materials. These results establish the relationship between oxygen content and structural and functional properties for a range of multivalent transition metal oxides.
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Affiliation(s)
- Erik Enriquez
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Zach Harrell
- Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249, USA
| | - Paul Dowden
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Nicholas Koskelo
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Joseph Roback
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Marc Janoschek
- Condensed Matter and Magnet Science Group, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Chonglin Chen
- Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249, USA
| | - Quanxi Jia
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA
- Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA
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18
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Lee SA, Hwang JY, Kim ES, Kim SW, Choi WS. Highly Oriented SrTiO 3 Thin Film on Graphene Substrate. ACS APPLIED MATERIALS & INTERFACES 2017; 9:3246-3250. [PMID: 28090770 DOI: 10.1021/acsami.6b12258] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Growth of perovskite oxide thin films on Si in crystalline form has long been a critical obstacle for the integration of multifunctional oxides into Si-based technologies. In this study, we propose pulsed laser deposition of a crystalline SrTiO3 thin film on a Si using graphene substrate. The SrTiO3 thin film on graphene has a highly (00l)-oriented crystalline structure which results from the partial epitaxy. Moreover, graphene promotes a sharp interface by highly suppressing the chemical intermixing. The important role of graphene as a 2D substrate and diffusion barrier allows the expansion of device applications based on functional complex oxides.
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Affiliation(s)
| | - Jae-Yeol Hwang
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Korea
| | - Eun Sung Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Korea
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19
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Oka D, Fukumura T. Crystal engineering for novel functionalities with oxide thin film epitaxy. CrystEngComm 2017. [DOI: 10.1039/c7ce00322f] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
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