2
|
Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe 2O 4 Thin Film. Sci Rep 2017; 7:12427. [PMID: 28963521 PMCID: PMC5622061 DOI: 10.1038/s41598-017-12579-x] [Citation(s) in RCA: 46] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2017] [Accepted: 08/31/2017] [Indexed: 12/03/2022] Open
Abstract
Resistive Switching in oxides has offered new opportunities for developing resistive random access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along with magnetization switching of cobalt ferrite (CFO) thin film using Al/CFO/FTO sandwich structure, which makes it a potential candidate for developing future multifunctional memory devices. The device shows good retention characteristic time (>104 seconds) and endurance performance, a good resistance ratio of high resistance state (HRS) and low resistance state (LRS) ~103. Nearly constant resistance values in LRS and HRS confirm the stability and non-volatile nature of the device. The device shows different conduction mechanisms in the HRS and LRS i.e. Schottky, Poole Frenkel and Ohmic. Magnetization of the device is also modulated by applied electric field which has been attributed to the oxygen vacancies formed/annihilated during the voltage sweep and indicates the presence of valence change mechanism (VCM) in our device. It is suggested that push/pull of oxygen ions from oxygen diffusion layer during voltage sweep is responsible for forming/rupture of oxygen vacancies conducting channels, leading to switching between LRS and HRS and for switching in magnetization in CFO thin film. Presence of VCM in our device was confirmed by X-ray Photoelectron Spectroscopy at Al/CFO interface.
Collapse
|
3
|
Nagashima K, Yoshida H, Klamchuen A, Kanai M, Meng G, Zhuge F, He Y, Anzai H, Zhu Z, Suzuki M, Boudot M, Takeda S, Yanagida T. Tailoring Nucleation at Two Interfaces Enables Single Crystalline NiO Nanowires via Vapor-Liquid-Solid Route. ACS APPLIED MATERIALS & INTERFACES 2016; 8:27892-27899. [PMID: 27670883 DOI: 10.1021/acsami.6b09761] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Here we show a rational strategy to fabricate single crystalline NiO nanowires via a vapor-liquid-solid (VLS) route, which essentially allows us to tailor the diameter and the spatial position. Our strategy is based on the suppression of the nucleation at vapor-solid (VS) interface, which promotes nucleation only at the liquid-solid (LS) interface. Manipulating both the supplied material fluxes (oxygen and metal) and the growth temperature enables enhancement of the nucleation only at the LS interface. Furthermore, this strategy allows us to reduce the growth temperature of single crystalline NiO nanowires down to 550 °C, which is the lowest growth temperature so far reported.
Collapse
Affiliation(s)
- Kazuki Nagashima
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Hideto Yoshida
- The Institute of Scientific and Industrial Research, Osaka University , 8-1 Mihogaoka Ibaraki, Osaka 567-0047, Japan
| | - Annop Klamchuen
- National Nanotechnology Center (NANOTEC), NSTDA , 111 Thailand Science Park, Pathumthani 12120, Thailand
| | - Masaki Kanai
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Gang Meng
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Fuwei Zhuge
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Yong He
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Hiroshi Anzai
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Zetao Zhu
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Masaru Suzuki
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Mickaël Boudot
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| | - Seiji Takeda
- The Institute of Scientific and Industrial Research, Osaka University , 8-1 Mihogaoka Ibaraki, Osaka 567-0047, Japan
| | - Takeshi Yanagida
- The Institute for Materials Chemistry and Engineering, Kyushu University , 6-1 Kasuga-Koen, Kasuga, Fukuoka 816-8580, Japan
| |
Collapse
|