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Xue Y, Yan S, Lv S, Song S, Song Z. Ta-Doped Sb 2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics. NANO-MICRO LETTERS 2021; 13:33. [PMID: 34138214 PMCID: PMC8187703 DOI: 10.1007/s40820-020-00557-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2020] [Accepted: 10/29/2020] [Indexed: 06/01/2023]
Abstract
Phase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures, which is critical for the efficient processing and reliable storage of data at full capacity. Herein, we report a novel PCM device based on Ta-doped antimony telluride (Sb2Te), which exhibits both high-speed characteristics and excellent high-temperature characteristics, with an operation speed of 2 ns, endurance of > 106 cycles, and reversible switching at 140 °C. The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure, which improves the thermal stability. Furthermore, the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation, reducing the power consumption and improving the long-term endurance. Our findings for this new Ta-Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.
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Affiliation(s)
- Yuan Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
| | - Shuai Yan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
| | - Shilong Lv
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
| | - Sannian Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China.
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China.
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Wang G, Li C, Shi D, Zhang Y, Shen X. Laser-induced metastable phase in crystalline phase-change films by confocal Raman spectrometer. SPECTROCHIMICA ACTA. PART A, MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 2018; 205:551-556. [PMID: 30075435 DOI: 10.1016/j.saa.2018.07.077] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/04/2018] [Revised: 07/24/2018] [Accepted: 07/26/2018] [Indexed: 06/08/2023]
Abstract
Understanding crystallization process in phase-change materials is very important for data storage application. Especially, accurately controlling the metastable phase transition as well as characterizing its structure evolution is still under investigation. In this study, phase transformations have occurs from amorphous to crystalline phases when the phase-change films were irradiated continuously by the 785 nm laser irradiation. By adjusting the laser power, the different metastable phases in conventional Ge2Sb2Te5, Sb2Te3, ZnSb, ZnSb-Al2O3 and ZnSb-ZnO were obtained and distinguished by their different Raman vibration modes. The effect of laser power on the phase-change threshold of these films was studied systematically. Large structural differences induced by laser irradiation were revealed based on the changes in Raman profiles. Our study may offer a new insight into an accurate control of distinct metastable state to realize optical multilevel memory.
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Affiliation(s)
- Guoxiang Wang
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang 315211, China; Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang 315211, China.
| | - Chao Li
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang 315211, China; Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang 315211, China
| | - Daotian Shi
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang 315211, China; Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang 315211, China
| | - Yawen Zhang
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang 315211, China; Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang 315211, China
| | - Xiang Shen
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang 315211, China; Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang 315211, China.
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Wang Y, Wang T, Zheng Y, Liu G, Li T, Lv S, Song W, Song S, Cheng Y, Ren K, Song Z. Atomic scale insight into the effects of Aluminum doped Sb 2Te for phase change memory application. Sci Rep 2018; 8:15136. [PMID: 30310138 PMCID: PMC6181964 DOI: 10.1038/s41598-018-33421-y] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2018] [Accepted: 09/26/2018] [Indexed: 11/09/2022] Open
Abstract
To date, the unpleasant trade-off between crystallization speed and thermal stability for most phase change materials is detrimental to achieve phase change memory (PCM) with both features of high-speed and good-retention. However, it is proved that Al doping in Sb2Te, served as storage media in PCM, favors both a high writing speed (6 ns) and a good retention (103 °C), as well as a low power consumption. Judging by experimental and theoretical investigations, doped Al atoms prefer to replace Sb in Sb2Te lattice, strongly bonded with 6 Te atoms, to form a homogeneous phase. While in amorphous Al doped Sb2Te (AST), Al atoms are in tetrahedral environment, firmly bonded with four Sb/Te atoms. The strong bonding in Al centered tetrahedron in amorphous AST can obstruct the collective motion of Sb atoms near the matrix boundary, leading to the improvement in thermal stability and the confinement in grain size.
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Affiliation(s)
- Yong Wang
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tianbo Wang
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yonghui Zheng
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guangyu Liu
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Li
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shilong Lv
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Wenxiong Song
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Sannian Song
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yan Cheng
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200062, China
| | - Kun Ren
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
- Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Hangzhou, Zhejiang, 310018, China.
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
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