Direct-written polymer field-effect transistors operating at 20 MHz

Direct Laser Writing: From Materials Synthesis and Conversion to Electronic Device Processing

Direct Laser Writing (DLW) has been increasingly selected as a microfabrication route for efficient, cost-effective, high-resolution material synthesis and conversion. Concurrently, lasers participate in the patterning and assembly of functional geometries in several fields of application, of which electronics stand out. In this review, recent advances and strategies based on DLW for electronics microfabrication are surveyed and outlined, based on laser material growth strategies. First, the main DLW parameters influencing material synthesis and transformation mechanisms are summarized, aimed at selective, tailored writing of conductive and semiconducting materials. Additive and transformative DLW processing mechanisms are discussed, to open space to explore several categories of materials directly synthesized or transformed for electronics microfabrication. These include metallic conductors, metal oxides, transition metal chalcogenides and carbides, laser-induced graphene, and their mixtures. By accessing a wide range of material types, DLW-based electronic applications are explored, including processing components, energy harvesting and storage, sensing, and bioelectronics. The expanded capability of lasers to participate in multiple fabrication steps at different implementation levels, from material engineering to device processing, indicates their future applicability to next-generation electronics, where more accessible, green microfabrication approaches integrate lasers as comprehensive tools.

Silver-Gold Alloy Nanoparticles (AgAu NPs): Photochemical Synthesis of Novel Biocompatible, Bimetallic Alloy Nanoparticles and Study of Their In Vitro Peroxidase Nanozyme Activity

Facile synthesis of metal nanoparticles with controlled physicochemical properties using environment-friendly reagents can open new avenues in biomedical applications. Nanomaterials with controlled physicochemical properties have opened new prospects for a variety of applications. In the present study, we report a single-step photochemical synthesis of ~5 nm-sized silver (Ag) and gold (Au) nanoparticles (NPs), and Ag-Au alloy nanoparticles using L-tyrosine. The physicochemical and surface properties of both monometallic and bimetallic NPs were investigated by analytical, spectroscopic, and microscopic techniques. Our results also displayed an interaction between L-tyrosine and surface atoms that leads to the formation of AgAu NPs by preventing the growth and aggregation of the NPs. This method efficiently produced monodispersed NPs, with a narrow-sized distribution and good stability in an aqueous solution. The cytotoxicity assessment performed on breast cancer cell lines (MCF-7) revealed that the biofriendly L-tyrosine-capped AgNPs, AuNPs, and bimetallic AgAu NPs were biocompatible. Interestingly, AgAu NPs have also unveiled controlled cytotoxicity, cell viability, and in vitro peroxidase nanozyme activity reliant on metal composition and surface coating.

Nanoscale flexible organic thin-film transistors

Direct-write electron-beam lithography has been used to fabricate low-voltage p-channel and n-channel organic thin-film transistors with channel lengths as small as 200 nm and gate-to-contact overlaps as small as 100 nm on glass and on flexible transparent polymeric substrates. The p-channel transistors have on/off current ratios as large as 4 × 109 and subthreshold swings as small as 70 mV/decade, and the n-channel transistors have on/off ratios up to 108 and subthreshold swings as low as 80 mV/decade. These are the largest on/off current ratios reported to date for nanoscale organic transistors. Inverters based on two p-channel transistors with a channel length of 200 nm and gate-to-contact overlaps of 100 nm display characteristic switching-delay time constants between 80 and 40 ns at supply voltages between 1 and 2 V, corresponding to a supply voltage-normalized frequency of about 6 MHz/V. This is the highest voltage-normalized dynamic performance reported to date for organic transistors fabricated by maskless lithography.

Organic Electronics Picks Up the Pace: Mask-Less, Solution Processed Organic Transistors Operating at 160 MHz

Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy, and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing production schemes further boosts the benefits offered by such technology, facilitating the implementation of cheap, conformable, bio-compatible electronic applications. The result shown in this work challenges the widespread assumption that such class of electronic devices is relegated to low-frequency operation, owing to the limited charge mobility of the materials and to the low spatial resolution achievable with conventional printing techniques. Here, it is shown that solution-processed and direct-written organic field-effect transistors can be carefully designed and fabricated so to achieve a maximum transition frequency of 160 MHz, unlocking an operational range that was not available before for organics. Such range was believed to be only accessible with more performing classes of semiconductor materials and/or more expensive fabrication schemes. The present achievement opens a route for cost- and energy-efficient manufacturability of flexible and conformable electronics with wireless-communication capabilities.

Blurred Electrode for Low Contact Resistance in Coplanar Organic Transistors

Inefficient charge injection and transport across the electrode/semiconductor contact edge severely limits the device performance of coplanar organic thin-film transistors (OTFTs). To date, various approaches have been implemented to address the adverse contact problems of coplanar OTFTs. However, these approaches mainly focused on reducing the injection resistance and failed to effectively lower the access resistance. Here, we demonstrate a facile strategy by utilizing the blurring effect during the deposition of metal electrodes, to significantly reduce the access resistance. We find that the transition region formed by the blurring behavior can continuously tune the molecular packing and thin-film growth of organic semiconductors across the contact edge, as well as provide continuously distributed gap states for carrier tunnelling. Based on this versatile strategy, the fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) coplanar OTFT shows a high field-effect mobility of 6.08 cm² V^-1 s^-1 and a low contact resistance of 2.32 kΩ cm, comparable to the staggered OTFTs fabricated simultaneously. Our work addresses the crucial impediments for further reducing the contact resistance in coplanar OTFTs, which represents a significant step of contact injection engineering in organic devices.

Coherent Electron Transport in Air-Stable, Printed Single-Crystal Organic Semiconductor and Application to Megahertz Transistors

Organic semiconductors (OSCs) have attracted growing attention for optoelectronic applications such as field-effect transistors (FETs), and coherent (or band-like) carrier transport properties in OSC single crystals (SCs) have been of interest as they can lead to high carrier mobilities. Recently, such p-type OSC SCs compatible with a printing technology have been used to achieve high-speed FETs; therefore, developments of n-type counterparts may be promising for realizing high-speed complementary organic circuits. Herein, coherent electron transport properties in a printed SC of a state-of-the-art, air-stable n-type OSC, PhC₂ -BQQDI, by means of variable-temperature gated Hall effect measurements and X-ray single-crystal diffraction analyses in conjunction with band structure calculations, are reported. Furthermore, the SC FET is tested for high-speed operations, which obtains a cutoff frequency of 4.3 MHz at an operation voltage of 20 V in air. Thus, PhC₂ -BQQDI is shown as a new candidate for practical applications of SC-based, organic complementary devices.

Use of Silver Nanomaterials for Caries Prevention: A Concise Review

Objective

The aim of this concise review is to summarize the use of silver nanomaterials for caries prevention.

Methods

Two researchers independently performed a literature search of publications in English using Embase, Medline, PubMed, and Scopus databases. The keywords used were (silver nanoparticles OR AgNPs OR nano silver OR nano-silver) AND (caries OR tooth decay OR remineralisation OR remineralization). They screened the title and abstract to identify potentially eligible publications. They then retrieved the full texts of the identified publications to select original research reporting silver nanomaterials for caries prevention.

Results

The search identified 376 publications, and 66 articles were included in this study. The silver nanomaterials studied were categorized as resin with silver nanoparticles (n=31), silver nanoparticles (n=21), glass ionomer cement with silver nanoparticles (n=7), and nano silver fluoride (n=7). Most (59/66, 89%) studies investigated the antibacterial properties, and they all found that silver nanomaterials inhibited the adhesion and growth of cariogenic bacteria, mainly Streptococcus mutans. Although silver nanomaterials were used as anti-caries agents, only 11 (11/66, 17%) studies reported the effects of nanomaterials on the mineral content of teeth. Eight of them are laboratory studies, and they found that silver nanomaterials prevented the demineralization of enamel and dentin under an acid or cariogenic biofilm challenge. The remaining three are clinical trials that reported that silver nanomaterials prevented and arrested caries in children.

Conclusion

Silver nanoparticles have been used alone or with resin, glass ionomer, or fluoride for caries prevention. Silver nanomaterials inhibit the adhesion and growth of cariogenic bacteria. They also impede the demineralization of enamel and dentin.

Citrate and Polyvinylpyrrolidone Stabilized Silver Nanoparticles as Selective Colorimetric Sensor for Aluminum (III) Ions in Real Water Samples

The use of silver nanoparticles stabilized with citrate and polyvinylpyrrolidone as a sensor for aluminum ions determination is proposed in this paper. These non-functionalized and specific nanoparticles provide a highly selective and sensitive detection system for aluminum in acidic solutions. The synthesized nanoparticles were characterized by transmission electron microscopy. Surface plasmon band deconvolution analysis was applied to study the interaction between silver nanoparticles and aluminum ions in solution. The interaction band in the UV-visible region was used as an analytical signal for quantitation purposes. The proposed detection system offers an effective AND wide linearity range (0.1–10³ nM), specificity for Al(III) in THE presence of other metallic ions in solution, as well as high sensitivity (limit of detection = 40.5 nM). The proposed silver-nanoparticles-based sensor WAS successfully used for detecting Al(III) in real water samples.

Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors

Despite the increasing understanding of charge transport in organic field-effect transistors (OFETs), charge injection from source/drain electrodes into organic semiconductors remains crucial for improving device performance and lowering power consumption. The analysis of contact resistance is generally carried out without clearly distinguishing the Schottky barrier and access resistance. Here we show that the access resistance through the organic semiconductor bulk can significantly influence the Schottky barrier evaluation and affect the charge-transport exploration. Indeed, access resistance plays a leading role in the contact resistance, whereas the Schottky barrier (expressed as the interface resistance) determines the charge injection at the metal/semiconductor interface. The Schottky barrier evaluation strongly depends on the access resistance and bias voltage. After eliminating the access resistance effect, the intrinsic Schottky barrier appears to be very coincident and weakly dependent on the work function of the contact metal. This work provides clues to understanding the Schottky barrier and charge injection in OFETs to optimize OFETs for high-performance and advanced applications.

Vertical Organic Thin-Film Transistors with an Anodized Permeable Base for Very Low Leakage Current

The organic permeable base transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to control the transistor current. This electrode is surrounded by a native oxide layer for passivation, currently created by oxidation in air. However, this process is not reliable and leads to large performance variations between samples, slow production, and relatively high leakage currents. Here, for the first time it is demonstrated that electrochemical anodization can be conveniently employed for the fabrication of high-performance OPBTs with vastly reduced leakage currents and more controlled process parameters. Very large transmission factors of 99.9996% are achieved, while excellent on/off ratios of 5 × 10⁵ and high on-currents greater than 300 mA cm^-2 show that the C₆₀ semiconductor layer can withstand the electrochemical anodization. These results make anodization an intriguing option for innovative organic transistor design.

Accessing MHz Operation at 2 V with Field-Effect Transistors Based on Printed Polymers on Plastic

Organic printed electronics are suitable for the development of wearable, lightweight, distributed applications in combination with cost-effective production processes. Nonetheless, some necessary features for several envisioned disruptive mass-produced products are still lacking: among these radio-frequency (RF) communication capability, which requires high operational speed combined with low supply voltage in electronic devices processed on cheap plastic foils. Here, it is demonstrated that high-frequency, low-voltage, polymer field-effect transistors can be fabricated on plastic with the sole use of a combination of scalable printing and digital laser-based techniques. These devices reach an operational frequency in excess of 1 MHz at the challengingly low bias voltage of 2 V, and exceed 14 MHz operation at 7 V. In addition, when integrated into a rectifying circuit, they can provide a DC voltage at an input frequency of 13.56 MHz, opening the way for the implementation of RF devices and tags with cost-effective production processes.

Route towards sustainable smart sensors: ferroelectric polyvinylidene fluoride-based materials and their integration in flexible electronics

Printed ferroelectric devices are ideal candidates for self-powered and multifunctional sensor skins, contributing to a sustainable smart future.

Active Materials for Organic Electrochemical Transistors

The organic electrochemical transistor (OECT) is a device capable of simultaneously controlling the flow of electronic and ionic currents. This unique feature renders the OECT the perfect technology to interface man-made electronics, where signals are conveyed by electrons, with the world of the living, where information exchange relies on chemical signals. The function of the OECT is controlled by the properties of its core component, an organic conductor. Its chemical structure and interactions with electrolyte molecules at the nanoscale play a key role in regulating OECT operation and performance. Herein, the latest research progress in the design of active materials for OECTs is reviewed. Particular focus is given on the conducting polymers whose properties lead to advances in understanding the OECT working mechanism and improving the interface with biological systems for bioelectronics. The methods and device models that are developed to elucidate key relations between the structure of conducting polymer films and OECT function are discussed. Finally, the requirements of OECT design for in vivo applications are briefly outlined. The outcomes represent an important step toward the integration of organic electronic components with biological systems to record and modulate their functions.

Reproducible, High Performance Fully Printed Photodiodes on Flexible Substrates through the Use of a Polyethylenimine Interlayer

This paper investigates with a statistical analysis the issue of performance reproducibility and optimization in fully inkjet-printed organic photodetectors on flexible substrates. The most crucial process step to obtain reproducible, well performing devices with a high process yield turns out to be the printing of the thin polyethylenimine interlayer used as a surface modifier for the bottom electrode. Controlling solution composition and deposition parameters for this layer, a 57 nA cm^-2 mean reverse dark current was achieved, with an outstanding standard deviation as low as 15 nA cm^-2, with dramatic improvements in process yield (from less than 20% to over 90%). Device performance in terms of dark currents, EQE (from 50% up to 90% at 525 nm, depending on process), and rectification (ratio between forward current and reverse current over 10⁴ and reaching 10⁵ in the best cases) is among the best for fully printed detectors. Furthermore, the importance of relative humidity control in the deposition environment during the interlayer printing on device characteristics is reported, indicating the processing conditions optimal for scaling to mass manufacturing. The overall interlayer optimization approach was applied to a process using widely adopted materials in the organic optoelectronics field, and thus retains relevance on a broad range.

Materials, Processes, and Facile Manufacturing for Bioresorbable Electronics: A Review

Bioresorbable electronics refer to a new class of advanced electronics that can completely dissolve or disintegrate with environmentally and biologically benign byproducts in water and biofluids. They have provided a solution to the growing electronic waste problem with applications in temporary usage of electronics such as implantable devices and environmental sensors. Bioresorbable materials such as biodegradable polymers, dissolvable conductors, semiconductors, and dielectrics are extensively studied, enabling massive progress of bioresorbable electronic devices. Processing and patterning of these materials are predominantly relying on vacuum-based fabrication methods so far. However, for the purpose of commercialization, nonvacuum, low-cost, and facile manufacturing/printing approaches are the need of the hour. Bioresorbable electronic materials are generally more chemically reactive than conventional electronic materials, which require particular attention in developing the low-cost manufacturing processes in ambient environment. This review focuses on material reactivity, ink availability, printability, and process compatibility for facile manufacturing of bioresorbable electronics.

A Pulse-Biasing Small-Signal Measurement Technique Enabling 40 MHz Operation of Vertical Organic Transistors

Organic/polymer transistors can enable the fabrication of large-area flexible circuits. However, these devices are inherently temperature sensitive due to the strong temperature dependence of charge carrier mobility, suffer from low thermal conductivity of plastic substrates, and are slow due to the low mobility and long channel length (L). Here we report a new, advanced characterization circuit that within around ten microseconds simultaneously applies an accurate large-signal pulse bias and a small-signal sinusoidal excitation to the transistor and measures many high-frequency parameters. This significantly reduces the self-heating and therefore provides data at a known junction temperature more accurate for fitting model parameters to the results, enables small-signal characterization over >10 times wider bias I–V range, with ~10⁵ times less bias-stress effects. Fully thermally-evaporated vertical permeable-base transistors with physical L = 200 nm fabricated using C₆₀ fullerene semiconductor are characterized. Intrinsic gain up to 35 dB, and record transit frequency (unity current-gain cutoff frequency, f_T) of 40 MHz at 8.6 V are achieved. Interestingly, no saturation in f_T − I and transconductance (g_m − I) is observed at high currents. This paves the way for the integration of high-frequency functionalities into organic circuits, such as long-distance wireless communication and switching power converters.

Wafer-scale, layer-controlled organic single crystals for high-speed circuit operation

Two-dimensional (2D) layered semiconductors are a novel class of functional materials that are an ideal platform for electronic applications, where the whole electronic states are directly modified by external stimuli adjacent to their electronic channels. Scale-up of the areal coverage while maintaining homogeneous single crystals has been the relevant challenge. We demonstrate that wafer-size single crystals composed of an organic semiconductor bimolecular layer with an excellent mobility of 10 cm² V^-1 s^-1 can be successfully formed via a simple one-shot solution process. The well-controlled process to achieve organic single crystals composed of minimum molecular units realizes unprecedented low contact resistance and results in high-speed transistor operation of 20 MHz, which is twice as high as the common frequency used in near-field wireless communication. The capability of the solution process for scale-up coverage of high-mobility organic semiconductors opens up the way for novel 2D nanomaterials to realize products with large-scale integrated circuits on film-based devices.